# Tensile Base — Complete Technical Materials Reference (llms-full.txt)

Canonical Domain: https://tensilebase.com
Total Product Lines: 154 across 6 disciplines.
RFQ Web Portal: https://tensilebase.com/quote.html
JSON API: https://tensilebase.com/api/products

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## Alumina Ceramic Tubes (`TB-AL2O3-TU`)
- **URL:** https://tensilebase.com/products/alumina-ceramic-tubes/
- **Quote URL:** https://tensilebase.com/quote.html?product=alumina-ceramic-tubes
- **Category:** Technical Ceramics
- **Chemical Formula:** Al2O3 (Elements: Al, O)
- **CAS Registry Number:** 1344-28-1
- **Synonyms:** Sintered aluminum oxide furnace tube, corundum process tube, impervious recrystallized alumina tube, high-temperature muffle tube
- **Purity / Grades:** 99.5% / 99.7% / 99.8% Al2O3
- **Typical Dimensions:** OD 6–120 mm × ID 4–108 mm
- **Configurations:** Lengths up to 1,800 mm; OBE or COE
- **Typical Lead Time:** 7–12 business days (stock) / 3–4 weeks (custom fired)
- **Documentation Included:** Manufacturer Lot COA (Al2O3 %, trace oxides Fe2O3/SiO2/Na2O, bulk density), dimensional check sheet, and non-hazardous ceramic article safety statement.

### Technical Overview
Recrystallized high-purity alumina (Al2O3) furnace tubes provide gas-tight atmosphere containment, high electrical resistivity, and chemical inertness under oxidizing, inert, vacuum, and dry reducing environments up to 1,750 °C. Slip-cast or isostatically pressed and sintered to near-zero open porosity, 99.5%–99.8% grades minimize alkali and silica volatilization during semiconductor annealing, powder calcination, and crystal growth.

Each lot is sourced to dimensional specification—including open-both-ends (OBE), closed-one-end (COE), ground end faces for O-ring vacuum flanges, and custom wall thicknesses—and ships with the manufacturer batch Certificate of Analysis (chemical assay and bulk density) plus pre-shipment dimensional verification.

### Nominal Properties
- **Max Working Temperature:** 1,700–1,750 °C continuous (99.8% Al2O3, unloaded)
- **Bulk Density:** 3.88–3.92 g/cm³ (impervious, <0.1% open porosity)
- **Flexural Strength (RT):** 330–380 MPa
- **Thermal Expansion (CTE):** 7.8–8.2 × 10⁻⁶ /K (20–1,000 °C)
- **Dielectric Strength:** 14–17 kV/mm

### Applications
- Horizontal and vertical split-tube laboratory furnaces up to 1,750 °C
- Controlled-atmosphere sintering, calcination, and vacuum thermal processing
- High-voltage electrical feedthrough sleeves and plasma/RF liners
- Corrosive gas and molten metal/slag containment liners

### Buyer Specification Guide
Specify outside diameter (OD), inside diameter (ID) or wall thickness, overall length, alumina grade (99.5% vs. 99.8%), open-both-ends (OBE) or closed-one-end (COE), straightness/camber tolerance, O-ring flange OD grinding needs, operating temperature, and ramp rate.

### Technical FAQs
- **Q: What heating and cooling ramp rate is recommended for 99.8% alumina furnace tubes?**
  A: High-purity dense alumina is sensitive to thermal shock; typical laboratory furnace practice limits heating and cooling rates to 150–300 °C per hour (2.5–5 °C/min) and uses refractory radiation shields inside the hot-zone ends to reduce axial thermal gradients.
- **Q: Can ends be precision OD-ground for KF/ISO vacuum compression fittings?**
  A: Yes. Standard sintered tubes have ±1.5–2% as-fired OD tolerance, while diamond centerless-ground ends achieve ±0.05 to ±0.10 mm OD tolerance for reliable Viton or silicone O-ring vacuum sealing.
- **Q: What documentation accompanies alumina tube shipments?**
  A: Shipments include the producing mill's batch Certificate of Analysis reporting Al2O3 content, trace oxide impurities, and sintered density alongside key dimensional checks (OD, ID, length, camber).

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## Alumina Crucibles & Lids (`TB-AL2O3-CR`)
- **URL:** https://tensilebase.com/products/alumina-crucibles/
- **Quote URL:** https://tensilebase.com/quote.html?product=alumina-crucibles
- **Category:** Technical Ceramics
- **Chemical Formula:** Al2O3 (Elements: Al, O)
- **CAS Registry Number:** 1344-28-1
- **Synonyms:** Corundum melting crucible, sintered Al2O3 TGA/DSC pan, high-form ceramic crucible, cylindrical calcination sagger
- **Purity / Grades:** 99.5% / 99.8% Al2O3
- **Typical Dimensions:** 2 mL to 2,000 mL capacities
- **Configurations:** Cylindrical, conical (high/low form), rectangular trays, matching lids
- **Typical Lead Time:** 7–12 business days (standard capacities) / 3 weeks (custom)
- **Documentation Included:** Manufacturer Lot COA (chemical composition & bulk density) and solid-article safety sheet.

### Technical Overview
Dense 99.5% and 99.8% sintered alumina crucibles resist chemical attack from metal oxides, molten salts, glass melts, and high-purity alloys at temperatures up to 1,750 °C. Available from micro-analytical 2–5 mL vessels up to 2,000 mL production saggers, high-purity corundum bodies prevent silica contamination in battery cathode synthesis, phosphor firing, and rare-earth metallurgy.

Crucibles and flat or recessed lids can be ordered together or separately, individually foam-packed for export air transit, and backed by manufacturer batch chemical and physical COA documentation.

### Nominal Properties
- **Max Service Temperature:** 1,700–1,750 °C
- **Al2O3 Purity:** ≥99.5% or ≥99.8% (Fe2O3 < 0.05%)
- **Apparent Porosity:** <0.2% (dense gas-tight grade)
- **Bulk Density:** 3.85–3.92 g/cm³
- **Recommended Ramp Rate:** ≤3–5 °C/min above 800 °C

### Applications
- Battery cathode/solid-state electrolyte precursor calcination (NMC, LLZO)
- Precious metal, superalloy, and specialty glass laboratory melting
- Thermogravimetric ashing, flux fusion, and loss-on-ignition (LOI) testing
- Crystal growth and optical oxide synthesis

### Buyer Specification Guide
Specify nominal volume (mL) or top OD × bottom OD × height × wall thickness, shape (cylindrical straight-wall, conical, arc, or rectangular sagger), alumina purity, whether matching lids are required, and chemical charge compatibility.

### Technical FAQs
- **Q: Are matching alumina crucible lids included automatically?**
  A: Lids can be quoted either bundled 1:1 with crucibles or as separate line items (often researchers order 20–30% spare lids). Specify flat disc lid or recessed/lipped lid in your RFQ.
- **Q: When should I choose zirconia or boron nitride instead of alumina crucibles?**
  A: Choose YSZ zirconia above 1,750 °C or for aggressive alkaline/Li-rich melts, and choose hexagonal boron nitride (h-BN) when non-wetting release of molten metals, silicon, halides, or III-V compounds in inert/vacuum atmospheres is required.
- **Q: Can alumina crucibles be used with LiOH or strong molten alkalis?**
  A: Strongly basic lithium salts (LiOH/Li2CO3) react with Al2O3 at elevated temperatures to form lithium aluminate; for heavy lithiation above 800 °C, high-purity MgO or YSZ zirconia saggers/crucibles are often preferred.

---
## Thermocouple Protection Tubes (`TB-AL2O3-TC`)
- **URL:** https://tensilebase.com/products/ceramic-thermocouple-tubes/
- **Quote URL:** https://tensilebase.com/quote.html?product=ceramic-thermocouple-tubes
- **Category:** Technical Ceramics
- **Chemical Formula:** Al2O3 (Elements: Al, O)
- **CAS Registry Number:** 1344-28-1
- **Synonyms:** C799 alumina thermocouple sheath, Type R/S/B platinum sensor protection tube, 2-bore & 4-bore ceramic thermocouple bead insulator
- **Purity / Grades:** 99.5% / 99.7% Al2O3 (C799)
- **Typical Dimensions:** OD 1.6–32 mm × Lengths up to 1,500 mm
- **Configurations:** Closed-one-end (COE) sheaths + 2-bore & 4-bore open insulators
- **Typical Lead Time:** 7–12 business days (standard DIN/IEC sizes) / 3 weeks (custom)
- **Documentation Included:** Manufacturer Lot COA (Al2O3 & SiO2 impurity limit), straightness/bore inspection sheet.

### Technical Overview
Platinum-rhodium noble-metal thermocouples (Types R, S, and B) rapidly poison and drift if exposed to silica vapors, metallic fumes, or reducing contaminants above 1,100 °C. Impervious C799 (99.7% Al2O3) closed-one-end protection sheaths combined with twin-bore or four-bore high-purity alumina capillary insulators isolate bare thermocouple wires electrically and chemically up to 1,750 °C.

Available in metric and fractional inch diameters with round closed domes, optional metal mounting collars, and paired multi-bore inner rods.

### Nominal Properties
- **Material Standard:** DIN VDE 0335 C799 (≥99.7% Al2O3) / 99.5% Al2O3
- **Max Operating Temp:** 1,750 °C
- **Gas Tightness:** Impervious outer sheath (<10⁻⁸ mbar·L/s He class)
- **Volume Resistivity (1,000 °C):** >10⁶ Ω·cm
- **Bore Configurations:** Single COE sheath; 2-hole, 4-hole, 6-hole inner insulators

### Applications
- Type R, S, and B noble-metal thermocouple assemblies up to 1,750 °C
- Glass tank crowns, ceramic kilns, and vacuum heat-treat furnaces
- Multi-circuit sensor feedthroughs using 2-bore and 4-bore capillary rods
- Molten aluminum and non-ferrous pyrometry immersion sheaths

### Buyer Specification Guide
Specify outer sheath OD × ID × length (closed-one-end), inner insulator OD × bore diameter × number of bores (2 or 4) × length, thermocouple wire gauge, and operating atmosphere.

### Technical FAQs
- **Q: Why is low-silica 99.7% (C799) alumina critical for Type R/S/B platinum thermocouples?**
  A: Mullite or lower-purity 95% ceramics contain silicate phases that reduce to volatile SiO above 1,200 °C, alloying with platinum wire to cause embrittlement and calibration drift. ≥99.7% Al2O3 keeps SiO2 extremely low.
- **Q: Can I order matching inner 2-bore or 4-bore insulator rods with outer sheaths?**
  A: Yes—specify both the outer COE protection tube dimensions and the inner multi-bore rod OD and bore diameter so clearances are matched on a single quote.
- **Q: How are long narrow thermocouple tubes packaged for air express?**
  A: Slender ceramic tubes are bundled in rigid PVC or double-wall heavy cardboard tubes suspended inside high-density foam-lined wooden or export cartons to prevent transit bending shock.

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## Alumina Combustion Boats (`TB-AL2O3-BT`)
- **URL:** https://tensilebase.com/products/alumina-combustion-boats/
- **Quote URL:** https://tensilebase.com/quote.html?product=alumina-combustion-boats
- **Category:** Technical Ceramics
- **Chemical Formula:** Al2O3 (Elements: Al, O)
- **CAS Registry Number:** 1344-28-1
- **Synonyms:** Ceramic sample boat, tube-furnace calcination tray, C/S analyzer combustion boat, corundum sintering boat
- **Purity / Grades:** 99.5% / 99.8% Al2O3
- **Typical Dimensions:** Lengths 30–250 mm × Widths 8–60 mm
- **Configurations:** Tapered handle/eyelet, flat-bottom rectangular, open or lidded
- **Typical Lead Time:** 5–10 business days (stock geometries) / 2–3 weeks (custom)
- **Documentation Included:** Manufacturer Lot COA (chemical assay & sintered density) and pack count inspection.

### Technical Overview
Sintered 99.5% and 99.8% alumina combustion boats are contoured specifically for horizontal tube furnaces, CVD deposition zones, and elemental combustion analyzers. Smooth unglazed interiors with minimal surface roughness prevent powder sticking during thermal decomposition, solid-state sintering, metal oxide reduction, and sulfur/carbon analysis.

Offered with pull-holes/handles for push-rod retrieval, semicircular or flat bottoms, and optional sliding covers to reduce vapor loss in flowing carrier gas.

### Nominal Properties
- **Purity Grades:** 99.5% and 99.8% Al2O3 (unglazed refractory)
- **Continuous Working Temp:** 1,650–1,750 °C
- **Standard Capacities:** 1 mL micro-boats to 120 mL wide trays
- **Water Absorption:** <0.1%
- **Chemical Resistance:** Inert to H2, Ar, N2, O2, and most neutral/acidic oxides

### Applications
- Tube-furnace powder synthesis, annealing, and CVD precursor evaporation
- Carbon/sulfur combustion analysis and coal/metallurgical ashing
- Thin-film sulfurization/selenization (MoS2, WS2) precursor boats
- Catalyst testing and high-temperature gravimetric thermal treatments

### Buyer Specification Guide
Specify boat overall length × top width × height, wall thickness, alumina purity, pull-handle/hole style, lid requirement, and the inside diameter (ID) of your furnace tube so radial clearance can be verified.

### Technical FAQs
- **Q: What clearance should I leave between an alumina boat and my furnace tube ID?**
  A: Allow at least 4–8 mm total diametral clearance relative to the furnace tube's minimum inside diameter (accounting for tube camber) so the boat slides freely without scraping the tube wall.
- **Q: Are these boats glazed or unglazed?**
  A: High-temperature 99.5%–99.8% alumina boats are unglazed; glazes soften around 1,000–1,150 °C and would fuse the boat directly to the furnace tube.
- **Q: What pack sizes are typical for laboratory combustion boats?**
  A: Standard sizes are commonly quoted in packs of 5, 10, 25, or 100 pieces, providing substantial unit-cost savings on recurring R&D consumables.

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## Alumina Ceramic Rods (`TB-AL2O3-RD`)
- **URL:** https://tensilebase.com/products/alumina-ceramic-rods/
- **Quote URL:** https://tensilebase.com/quote.html?product=alumina-ceramic-rods
- **Category:** Technical Ceramics
- **Chemical Formula:** Al2O3 (Elements: Al, O)
- **CAS Registry Number:** 1344-28-1
- **Synonyms:** Solid corundum rod, precision ground alumina shaft, ceramic furnace support bar, electrical standoff dowel
- **Purity / Grades:** 99.0% / 99.5% / 99.8% Al2O3
- **Typical Dimensions:** Ø 1.0–60 mm × Lengths up to 1,500 mm
- **Configurations:** As-fired or precision centerless diamond-ground (±0.01 mm)
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA, diameter/straightness/surface-roughness inspection report.

### Technical Overview
Solid high-purity alumina rods combine extreme compressive strength (>2,200 MPa), high elastic modulus (370 GPa), electrical insulation, and dimensional stability in vacuum and high-temperature oxidizing atmospheres. Extruded or cold-isostatically pressed stock can be supplied as-sintered for furnace rack supports or diamond centerless-ground to tight h6/g6 tolerances for wear pins, plungers, and precision linear alignment.

Ends can be diamond-cut square, chamfered, stepped, or slotted to customer CAD drawings.

### Nominal Properties
- **Compressive Strength:** 2,200–2,600 MPa
- **Elastic Modulus:** 360–380 GPa
- **Ground OD Tolerance:** Down to ±0.005–0.02 mm (Ra 0.2–0.8 µm)
- **Max Working Temp:** 1,700–1,750 °C
- **Outgassing:** UHV compatible (zero organic binders after firing)

### Applications
- High-temperature furnace load bars, setter pins, and push rods
- Ultra-high-vacuum (UHV) mechanical shafts and sensor mounts
- Wear-resistant plungers, metering pins, and laser/optical spacers
- High-voltage RF structural tie-rods and standoff insulators

### Buyer Specification Guide
Specify rod diameter and tolerance (as-fired ±2% vs. precision ground), cut length, cross-section (round, square, hex), chamfer/step machining drawing, alumina purity, and operating temperature/load.

### Technical FAQs
- **Q: What surface finish is achieved on centerless-ground alumina rods?**
  A: Standard diamond centerless grinding produces Ra 0.4–0.8 µm, with fine lapping/polishing down to Ra 0.05–0.1 µm available for dynamic seal plungers.
- **Q: Can threaded ends or cross-holes be added to alumina rods?**
  A: External ceramic threads are prone to notch stress, so ground steps, flats, cross-pin holes, or brazed/clamped metal sleeves are usually preferred—though coarse ground threads can be quoted to drawing.
- **Q: Are square and rectangular alumina bars also available?**
  A: Yes—square and rectangular cross-section alumina kiln bars and precision ground rails are available from the same 99.5%–99.8% grades.

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## Alumina Ceramic Plates (`TB-AL2O3-PL`)
- **URL:** https://tensilebase.com/products/alumina-ceramic-plates/
- **Quote URL:** https://tensilebase.com/quote.html?product=alumina-ceramic-plates
- **Category:** Technical Ceramics
- **Chemical Formula:** Al2O3 (Elements: Al, O)
- **CAS Registry Number:** 1344-28-1
- **Synonyms:** Thin-film 99.6% alumina substrate, thick-film 96% ceramic wafer, corundum kiln setter plate, ceramic wear liner tile
- **Purity / Grades:** 96% / 99.5% / 99.6% Al2O3
- **Typical Dimensions:** Thickness 0.25–40 mm; up to 400 × 400 mm
- **Configurations:** Tape-cast thin substrates, laser-scribed vias, surface-ground setter plates
- **Typical Lead Time:** 7–14 business days (standard blanks) / 2–4 weeks (CNC/laser machined)
- **Documentation Included:** Manufacturer Lot COA, thickness/flatness/camber & surface roughness verification.

### Technical Overview
Alumina ceramic plates span two specialized manufacturing routes: thin tape-cast substrates (0.25–2.0 mm in 96% thick-film or 99.6% thin-film polished grades) for power electronics, hybrid microcircuits, and PVD deposition carriers; and thick pressed/sintered plates (3–40 mm) diamond-blanchard ground flat for kiln setters, vacuum chucks, HV insulation barriers, and abrasive wear liners.

CO2/fiber laser cutting, laser via drilling, ultrasonic milling, and diamond lapping allow rapid turnaround on custom geometries without hard tooling.

### Nominal Properties
- **Thermal Conductivity (RT):** 24–32 W/m·K (grade dependent)
- **Dielectric Constant (1 MHz):** 9.4–9.9
- **Volume Resistivity (RT):** >10¹⁴ Ω·cm
- **Surface Finish Options:** As-fired (Ra ~0.6 µm), lapped (Ra <0.2 µm), polished (Ra <0.03 µm)
- **Max Working Temp:** 1,600–1,750 °C

### Applications
- Thin-film PVD/sputtering substrates and thick-film hybrid power electronics
- Flat high-temperature sintering setter plates and furnace hearth tiles
- Thermally conductive, electrically isolating heat spreaders (~25–30 W/m·K)
- Precision semiconductor chuck plates and wear pads

### Buyer Specification Guide
Specify length × width × thickness, alumina grade (96% electronic, 99.5% structural/setter, or 99.6% thin-film), surface finish (as-fired, ground, or polished one/both sides), flatness requirement, and DXF/PDF drawing for holes or slots.

### Technical FAQs
- **Q: What is the difference between 96% and 99.6% electronic alumina substrates?**
  A: 96% alumina has controlled glassy grain-boundary phases ideal for thick-film screen-printed pastes and laser scribing, whereas 99.6% alumina uses sub-micron grain powder for ultra-smooth Ra <0.025–0.05 µm surfaces needed in thin-film PVD photolithography.
- **Q: Can thick alumina setter plates be used repeatedly at 1,650 °C?**
  A: Yes, provided thermal gradients are controlled and spacers/setters are supported evenly on kiln furniture; porous or cordierite/mullite setters may also be quoted where faster thermal cycling below 1,350 °C is prioritized.
- **Q: What file formats do you accept for laser-cut or CNC-ground plate features?**
  A: Reference DXF, STEP, or dimensioned PDF drawings in the RFQ specifications field; we will request the drawing file directly by reply email during technical review.

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## Ceramic Insulators (`TB-CER-INS`)
- **URL:** https://tensilebase.com/products/ceramic-insulators/
- **Quote URL:** https://tensilebase.com/quote.html?product=ceramic-insulators
- **Category:** Technical Ceramics
- **Chemical Formula:** Al2O3 / ZrO2 / MgSiO3 (Elements: Al, Zr, Mg, Si, O)
- **CAS Registry Number:** 1344-28-1
- **Synonyms:** High-voltage ceramic standoff, UHV ceramic feedthrough sleeve, ceramic heater bobbin, precision insulating bushing & washer
- **Purity / Grades:** 95%–99.8% Al2O3, YSZ, Steatite, Cordierite
- **Typical Dimensions:** Custom CNC / green-machined / dry-pressed to drawing
- **Configurations:** Prototype 1–20 pcs (no mold fee via CNC) to high-volume pressed
- **Typical Lead Time:** 2–4 weeks
- **Documentation Included:** Manufacturer Material COA and full critical-to-quality (CTQ) dimensional inspection report against customer drawing.

### Technical Overview
Equipment builders in PVD/CVD semiconductor tools, electron-beam welders, analytical mass spectrometers, and industrial induction heaters rely on custom ceramic insulators where polymers melt, outgas, or arc. By combining CNC green-body machining before sintering with post-fire diamond grinding, complex flanged bushings, stepped collars, threaded standoffs, and slotted heater cores can be produced in small prototype lots without expensive dry-press steel tooling.

Materials include 95%–99.8% alumina, yttria-stabilized zirconia, steatite, and thermal-shock-tolerant cordierite/mullite.

### Nominal Properties
- **Dielectric Breakdown:** 14–22 kV/mm (material & thickness dependent)
- **Dimensional Tolerances:** ±0.01 to ±0.05 mm on diamond-ground features
- **Vacuum Compatibility:** Zero outgassing down to 10⁻¹⁰ Torr (dense 99.5%+ Al2O3)
- **Continuous Temp Range:** 1,200 °C (Steatite) to 1,750 °C (99.8% Al2O3)
- **Batch Sizes:** 1–10 pc CNC prototypes through 10,000+ pc production

### Applications
- PVD magnetron cathode dark-space shields and HV isolation bushings
- UHV/XHV electrical and RF feedthrough insulator sleeves
- Induction coil supports, plasma torch nozzles, and weld locating pins
- Wire-wound vacuum furnace heating element bobbins and spacers

### Buyer Specification Guide
Share part dimensions or drawing number/revision, preferred ceramic grade, critical tolerances, breakdown voltage or operating temperature, vacuum cleanliness requirements, and prototype vs. annual quantity.

### Technical FAQs
- **Q: Do I have to pay a pressing-mold tooling charge for 5 or 10 prototype ceramic insulators?**
  A: No—for small prototype and R&D quantities, parts are CNC green-machined from cold-isostatically pressed (CIP) billets and diamond-ground after firing, avoiding pressing-die charges.
- **Q: Which ceramic material is best if my insulator experiences rapid thermal shock?**
  A: Hexagonal boron nitride (h-BN), silicon nitride (Si3N4), fused quartz, or cordierite tolerate rapid temperature swings far better than dense high-purity alumina.
- **Q: Can parts be ultrasonically cleaned and cleanroom double-bagged for vacuum assembly?**
  A: Yes—specify DI-water/solvent ultrasonic cleaning and Class-clean double poly bagging in your RFQ if parts will enter HV/UHV chambers.

---
## Hexagonal Boron Nitride (h-BN) Ceramics (`TB-HBN-MC`)
- **URL:** https://tensilebase.com/products/boron-nitride-ceramics/
- **Quote URL:** https://tensilebase.com/quote.html?product=boron-nitride-ceramics
- **Category:** Technical Ceramics
- **Chemical Formula:** BN (Elements: B, N)
- **CAS Registry Number:** 10043-11-5
- **Synonyms:** White graphite machinable ceramic, hot-pressed hexagonal boron nitride crucible, PBN pyrolytic boron nitride, high-temp vacuum insulator
- **Purity / Grades:** 99% Pure BN / Binderless PBN /BN-ZrO2-SiC Composites
- **Typical Dimensions:** Crucibles, rods Ø 6–150 mm, plates, & CNC parts
- **Configurations:** Pure CaO/B2O3-sintered h-BN, Zero-binder HD-BN, Composite grades
- **Typical Lead Time:** 10–18 business days
- **Documentation Included:** Manufacturer Lot COA (BN %, B2O3/CaO/O2 binder assay, bulk density, porosity) and dimensional inspection report.

### Technical Overview
Often called 'white graphite,' hot-pressed hexagonal boron nitride (h-BN) shares graphite's layered crystal lubricity, effortless CNC machinability, and extreme thermal shock immunity—while remaining a superb high-voltage electrical insulator with high thermal conductivity (~30–60 W/m·K). Crucially, h-BN is non-wetting to molten aluminum, copper, silicon, gold, silver, halides, and III-V semiconductors (GaAs, InP), releasing solidified melts cleanly without cracking.

We supply pure binderless grades (≥99.5% BN for ultra-clean vacuum/MBE environments up to 2,000 °C in N2/Ar), standard B2O3/CaO-bonded machinable stock, and wear-enhanced BN-ZrO2/SiC composites—each accompanied by lot chemical and density COA.

### Nominal Properties
- **Max Working Temperature:** 850–950 °C (Air) / 1,800–2,100 °C (Inert Ar/N2) / 1,650 °C (Vacuum)
- **Bulk Density:** 1.90–2.15 g/cm³
- **Thermal Conductivity:** 28–55 W/m·K (anisotropic with pressing direction)
- **Dielectric Strength:** 30–40 kV/mm
- **Thermal Expansion (CTE):** 1.0–3.5 × 10⁻⁶ /K (exceptional thermal shock resistance)

### Applications
- MBE effusion cell crucibles, III-V crystal growth, and silicon/metal melting
- Ion implanter insulators, Hall-thruster plasma chambers, and PVD HV shields
- Molten metal break rings, nozzles, and glass-forming release fixtures
- High-temperature vacuum/inert furnace electrical spacers up to 1,800–2,100 °C

### Buyer Specification Guide
Specify operating atmosphere (air vs. vacuum vs. Ar/N2—critical for grade selection!), max temperature, contact melt chemistry, binderless vs. standard grade, and rod/plate/crucible dimensions or CNC drawing.

### Technical FAQs
- **Q: Why does binder choice (binderless vs. B2O3-bonded h-BN) matter in high vacuum?**
  A: Boric oxide (B2O3) sintering aids absorb ambient moisture and begin volatilizing in high vacuum above ~1,200 °C. For UHV, PVD, or semiconductor processes, specify pure diffusion-sintered binderless h-BN (≥99.5% BN) or pyrolytic boron nitride (PBN).
- **Q: Can I machine h-BN rods and plates in my own lab machine shop?**
  A: Yes—hot-pressed h-BN machines easily using standard dry carbide tooling without coolant (never use water-based cutting fluid, as porous/borate grades can absorb moisture) and requires zero post-machining firing.
- **Q: Does molten silicon, copper, or gold wet hexagonal boron nitride?**
  A: No—h-BN exhibits high contact angles with most non-ferrous molten metals, silicon, and molten salts, allowing ingots and solidified beads to drop out cleanly.

---
## Yttria-Stabilized Zirconia (YSZ) Ceramics (`TB-ZRO2-CR`)
- **URL:** https://tensilebase.com/products/zirconia-ceramic-crucibles-tubes/
- **Quote URL:** https://tensilebase.com/quote.html?product=zirconia-ceramic-crucibles-tubes
- **Category:** Technical Ceramics
- **Chemical Formula:** ZrO2 · Y2O3 (Elements: Zr, Y, O)
- **CAS Registry Number:** 1314-23-4
- **Synonyms:** TTZ toughened zirconia, 3Y-TZP structural ceramic, 8YSZ ultra-high-temperature crucible, zirconia oxygen sensor tube
- **Purity / Grades:** 3Y-TZP (94.7% ZrO2) & 8Y-FSZ Refractory Grades
- **Typical Dimensions:** Crucibles 5–1,000 mL, tubes, setter plates, CNC rings
- **Configurations:** 3 mol% Y2O3 structural tough grade; 5–8 mol% Y2O3 / MgO refractory grade
- **Typical Lead Time:** 10–16 business days
- **Documentation Included:** Manufacturer Lot COA (ZrO2 + HfO2 %, Y2O3/MgO stabilizer %, bulk density) and dimensional inspection.

### Technical Overview
Zirconium dioxide stabilized with yttria (3Y-TZP or 8YSZ) or magnesia (Mg-PSZ) bridges two demanding regimes: at room to moderate temperatures, fine-grain 3Y-TZP delivers the highest fracture toughness (~8–10 MPa·m½) and flexural strength (>900 MPa) of any oxide ceramic, outperforming alumina in impact and sliding wear; at extreme temperatures, fully stabilized YSZ crucibles and setter plates operate in oxidizing atmospheres up to 2,000–2,100 °C while resisting molten superalloys, platinum-group metals, and lithium-rich battery oxides.

Supplied as crucibles, furnace tubes, calcination saggers, oxygen-ion solid-electrolyte discs, and precision ground wear rings.

### Nominal Properties
- **Max Working Temp:** 2,000–2,100 °C (8YSZ refractory) / <500–800 °C structural 3Y-TZP
- **Bulk Density:** 5.95–6.08 g/cm³ (3Y-TZP) / 5.5–5.8 g/cm³ (refractory YSZ)
- **Flexural Strength (3Y-TZP):** 900–1,200 MPa
- **Thermal Conductivity:** 2.0–2.5 W/m·K (exceptionally low thermal loss)
- **Fracture Toughness:** 7.5–10 MPa·m½

### Applications
- Superalloy, platinum-group, and reactive melt crucibles up to 2,100 °C
- Lithium-rich solid-state battery (LLZO) calcination setter plates
- Solid oxide fuel cell (SOFC) / electrolyzer (SOEC) 8YSZ electrolyte membranes
- High-toughness wear sleeves, valve seats, shear blades, and guide rollers

### Buyer Specification Guide
Clarify whether your application is mechanical/wear (3 mol% Y2O3 fine-grain dense TZP) or ultra-high-temperature melting/calcining above 1,600 °C (8 mol% Y2O3 or CaO/MgO stabilized thermal-shock grade), along with geometry and heating rate.

### Technical FAQs
- **Q: What is the difference between 3Y-TZP and 8YSZ zirconia?**
  A: 3Y-TZP (3 mol% yttria) is partially stabilized tetragonal zirconia engineered for maximum mechanical strength and toughness in structural parts, whereas 8YSZ (8 mol% yttria) is fully cubic stabilized to prevent phase-transformation cracking at temperatures up to 2,100 °C and to conduct O²⁻ ions.
- **Q: Why must zirconia crucibles be heated more slowly than silicon carbide?**
  A: Zirconia has very low thermal conductivity (~2.2 W/m·K) combined with a relatively high CTE (~10 × 10⁻⁶ /K), so controlled ramp rates (typically ≤2–3 °C/min) prevent steep through-wall thermal stress.
- **Q: Are YSZ setter plates suitable for LLZO garnet solid electrolyte sintering?**
  A: Yes—YSZ setter plates avoid aluminum contamination from Al2O3 plates when sintering Al-sensitive lithium lanthanum zirconium oxide (LLZO) pellets.

---
## Silicon Carbide (SiC) & Silicon Nitride (Si3N4) Parts (`TB-SIC-CMP`)
- **URL:** https://tensilebase.com/products/silicon-carbide-nitride-ceramics/
- **Quote URL:** https://tensilebase.com/quote.html?product=silicon-carbide-nitride-ceramics
- **Category:** Technical Ceramics
- **Chemical Formula:** SiC / Si3N4 (Elements: Si, C, N)
- **CAS Registry Number:** 409-21-2
- **Synonyms:** Pressureless sintered alpha-SiC wear plate, silicon nitride molten aluminum riser/thermocouple tube, SSiC mechanical seal ring, ceramic wafer chuck
- **Purity / Grades:** SSiC (≥98.5% Direct-Sintered SiC) & GPSN/HIP Si3N4
- **Typical Dimensions:** Plates, tubes, burner nozzles, seal rings, balls, & CNC parts
- **Configurations:** Pressureless Sintered SiC (SSiC), Reaction-Bonded (RBSiC), Gas-Pressure Si3N4
- **Typical Lead Time:** 2–4 weeks
- **Documentation Included:** Manufacturer Lot COA (grade density, open porosity, flexural/hardness spec) and dimensional flatness/tolerance report.

### Technical Overview
Non-oxide structural ceramics excel where oxide ceramics crack from thermal shock or erode in corrosive slurries and molten metals. Pressureless sintered alpha-silicon carbide (SSiC) combines diamond-like hardness (~2,500 HV), high thermal conductivity (>120 W/m·K), and universal acid/alkali resistance up to 1,600 °C in air. Gas-pressure sintered silicon nitride (Si3N4) combines low thermal expansion (3.1 × 10⁻⁶ /K) with high fracture toughness, withstanding direct immersion in molten aluminum and zinc without wetting or thermal-shock failure.

Available as lapped seal rings, wafer-handling paddles, burner tubes, kiln beams, bearing balls, and custom CNC-ground geometries.

### Nominal Properties
- **Vickers Hardness:** 2,400–2,600 HV (SSiC) / 1,500–1,650 HV (Si3N4)
- **Thermal Conductivity (RT):** 110–140 W/m·K (SSiC) / 25–35 W/m·K (Si3N4)
- **Bulk Density:** 3.10–3.16 g/cm³ (SSiC) / 3.20–3.26 g/cm³ (Si3N4)
- **Thermal Shock ΔT:** ~350–450 °C (SSiC) / >750–800 °C (Si3N4)
- **Max Air Service Temp:** 1,600–1,650 °C (SSiC) / 1,200–1,350 °C (Si3N4)

### Applications
- Chemical pump mechanical seal rings, bushings, and slurry nozzles (SSiC)
- Semiconductor wafer susceptors, lapping plates, and lightweight optical mirrors
- Molten aluminum/non-ferrous degassing rotors, thermocouple sheaths, and risers (Si3N4)
- High-load rapid-cycle kiln beams, rollers, and radiant burner tubes

### Buyer Specification Guide
Specify SSiC (zero free silicon for HF/strong acid resistance), RBSiC (economical kiln beams), or sintered Si3N4 (high impact & thermal shock), plus dimensions, lapped flatness (light bands), and operating medium.

### Technical FAQs
- **Q: Why choose pressureless sintered SiC (SSiC) over reaction-bonded SiC (RBSiC) for chemical exposure?**
  A: RBSiC contains 8–12% free metallic silicon, which is leached by hydrofluoric/nitric mixtures and strong hot alkalis (KOH/NaOH). Direct-sintered SSiC contains <0.5% free Si and resists virtually all acids and bases.
- **Q: Can silicon nitride (Si3N4) survive direct immersion into 750 °C molten aluminum?**
  A: Yes—dense sintered Si3N4 has exceptional thermal shock resistance (ΔT > 750 °C) and is non-wetting to molten Al, making it the industry standard for foundry thermocouple sheaths and heater protection tubes.
- **Q: Can SSiC plates be lapped to optical flatness for vacuum chucks or seals?**
  A: Yes—diamond-lapped SSiC faces routinely achieve flatness within 1–3 helium light bands and surface roughness Ra < 0.05 µm.

---
## Machinable Mica Glass-Ceramic Stock & Parts (`TB-MGC-STK`)
- **URL:** https://tensilebase.com/products/machinable-glass-ceramic/
- **Quote URL:** https://tensilebase.com/quote.html?product=machinable-glass-ceramic
- **Category:** Technical Ceramics
- **Chemical Formula:** KMg3(AlSi3O10)F2 · Glass (Elements: Si, Al, Mg, K, F, O)
- **CAS Registry Number:** 65997-17-3
- **Synonyms:** Macor-equivalent machinable ceramic, fluorphlogopite mica glass-ceramic, UHV zero-porosity machinable insulator
- **Purity / Grades:** Zero-Porosity Fluorphlogopite Mica Glass-Ceramic
- **Typical Dimensions:** Rods Ø 5–150 mm; Sheets/Plates 2–50 mm thick
- **Configurations:** Cut-to-size bar/plate stock or finished CNC-machined components
- **Typical Lead Time:** 5–10 business days (stock blanks) / 2–3 weeks (CNC parts)
- **Documentation Included:** Manufacturer Material Lot Certificate (density, dielectric, thermal spec) and dimensional check report.

### Technical Overview
Fluorphlogopite mica glass-ceramic features randomly oriented microscopic mica platelets dispersed within a borosilicate glass matrix, arresting micro-cracks locally so standard high-speed steel or carbide end mills, drills, and taps can cut tight ±0.013 mm tolerances directly—with zero post-machining kiln firing and zero shrinkage. Unlike porous unfired ceramics, it is 100% dense, non-outgassing in ultra-high vacuum, radiation-resistant, and continuous-rated to 800 °C (1,000 °C peak).

Ideal for fast-turn R&D prototypes, UHV feedthrough blocks, coil forms, synchrotron/beamline fixtures, and aerospace/medical test jigs.

### Nominal Properties
- **Continuous / Peak Temp:** 800 °C continuous / 1,000 °C unloaded peak
- **Open Porosity:** 0% (helium leak tight, UHV non-outgassing)
- **Bulk Density:** 2.52 g/cm³
- **Thermal Conductivity:** 1.46 W/m·K
- **Dielectric Strength (AC):** ~40 kV/mm (thin section)

### Applications
- Rapid-turn R&D vacuum chamber electrical blocks, tapped spacers, and PEEK replacements
- Mass spectrometer, SEM/TEM, and particle-beamline insulating mounts
- Laser cavity frames, induction heating fixtures, and precision thermal breaks
- Coefficient-of-thermal-expansion matched mounts (~9.3 × 10⁻⁶ /K matches most metals)

### Buyer Specification Guide
Specify raw blank dimensions (rod diameter × length or plate L × W × thickness) for in-house machining, or provide a 3D STEP / 2D PDF drawing with thread callouts for finished CNC-machined components.

### Technical FAQs
- **Q: When should I choose machinable glass-ceramic vs. hexagonal boron nitride (h-BN)?**
  A: Choose mica glass-ceramic when you need zero porosity for UHV cleanliness, rigid tapped screw threads, or air operation up to 800–1,000 °C; choose h-BN when you need extreme thermal shock immunity, molten-metal non-wetting, or inert/vacuum operation above 1,000 °C up to 2,000 °C.
- **Q: Does machinable glass-ceramic require heat treatment after CNC machining?**
  A: No—parts are machined at full density and go straight from ultrasonic cleaning into service with zero firing shrinkage.
- **Q: Can standard metric (M2–M12) or unified (#2-56 to 1/2-20) internal threads be tapped?**
  A: Yes—standard carbide or HSS taps with flood water-soluble coolant easily cut clean internal threads when using a slightly oversized ~70% thread-engagement tap drill.

---
## High-Purity Fused Quartz Furnace Tubes (`TB-SIO2-TU`)
- **URL:** https://tensilebase.com/products/fused-quartz-tubes/
- **Quote URL:** https://tensilebase.com/quote.html?product=fused-quartz-tubes
- **Category:** Fused Quartz & Substrates
- **Chemical Formula:** SiO2 (Elements: Si, O)
- **CAS Registry Number:** 60676-86-0
- **Synonyms:** Clear fused silica CVD process tube, GE214 equivalent quartz tube, 4N SiO2 tube-furnace liner, quartz ampoule tubing
- **Purity / Grades:** ≥99.99% SiO2 (4N Semiconductor Grade, <20 ppm total metals)
- **Typical Dimensions:** OD 6–300 mm × Wall 1.5–8 mm × Length up to 2,000 mm
- **Configurations:** Fire-polished ends, KF/ball-joint/ground tapers, multi-zone CVD baffles
- **Typical Lead Time:** 5–10 business days (standard tube sizes) / 2–3 weeks (lampworked)
- **Documentation Included:** Manufacturer Lot COA (trace metallic impurities in ppm, OH content) and dimensional verification.

### Technical Overview
Electrically fused high-purity quartz tubing (≥99.99% SiO2, metallic impurities typically <15–25 ppm) combines ultra-low thermal expansion (0.55 × 10⁻⁶ /K) with optical UV-to-NIR transparency and exceptional cleanliness. Unlike crystalline ceramics, fused quartz tolerates rapid sliding-zone heating and air-quench cooling cycles essential in 2D material CVD (graphene, MoS2, h-BN), rapid thermal annealing (RTA), and vacuum ampoule sealing.

Available in standard straight cut lengths with fire-polished ends as well as custom scientific glassblowing (ground Taper/Ball joints, hose barbs, closed-one-end ampoules, and stainless KF flange adapters).

### Nominal Properties
- **SiO2 Purity:** ≥99.99% (Al <12 ppm, Fe <1 ppm, Na/K/Li <1.5 ppm each)
- **Continuous / Peak Temp:** 1,100 °C continuous / 1,200–1,250 °C short-term
- **Thermal Expansion (CTE):** 0.55 × 10⁻⁶ /K (20–320 °C, extreme thermal shock resistance)
- **Annealing / Softening Point:** ~1,215 °C / ~1,680 °C
- **Hydroxyl (OH) Content:** <150 ppm standard; low-OH (<5–10 ppm) vacuum grade available

### Applications
- Low-pressure & atmospheric CVD growth of graphene, CNTs, and 2D dichalcogenides
- Semiconductor oxidation, diffusion, and rapid-quench laboratory tube furnaces
- UV disinfection sleeves, photochemical reactors, and ICP plasma torches
- Vacuum-sealed crystal growth ampoules

### Buyer Specification Guide
Specify OD × wall thickness (or ID) × overall length, end finish (diamond-cut ground vs. fire-polished, closed-one-end, or ground glass joints), low-OH requirement if operating near 1,150 °C under vacuum, and quantity.

### Technical FAQs
- **Q: Why do fused quartz tubes turn cloudy (devitrify) above 1,150 °C, and how do I prevent it?**
  A: Above ~1,150 °C, trace surface alkalis (Na/K from fingerprints or sample vapors) catalyze crystallization into cristobalite, which cracks upon cooling. Always handle quartz tubes with clean nitrile/cotton gloves, wipe with IPA before firing, and switch to 99.8% alumina tubes for work above 1,200 °C.
- **Q: What OD tolerance fits standard 1-inch, 2-inch, and 50/60/80/100 mm compression O-ring tube furnaces?**
  A: Standard precision drawn quartz furnace tubes hold ±0.3 to ±1.0 mm OD tolerance depending on diameter, sealing directly against standard silicone/Viton double O-ring end flanges.
- **Q: Can you supply low-OH (<5 ppm) quartz tubes for moisture-sensitive halide synthesis?**
  A: Yes—specify vacuum-melted low-OH fused quartz (<5 ppm OH) in your RFQ to eliminate high-temperature hydroxyl outgassing and sag.

---
## Fused Quartz Sample Boats & Wafer Carriers (`TB-SIO2-BT`)
- **URL:** https://tensilebase.com/products/quartz-sample-boats/
- **Quote URL:** https://tensilebase.com/quote.html?product=quartz-sample-boats
- **Category:** Fused Quartz & Substrates
- **Chemical Formula:** SiO2 (Elements: Si, O)
- **CAS Registry Number:** 60676-86-0
- **Synonyms:** Slotted quartz wafer boat, CVD precursor evaporation boat, fused silica push-rod carrier, semiconductor diffusion boat
- **Purity / Grades:** ≥99.99% SiO2 Semiconductor-Grade Quartz
- **Typical Dimensions:** Boats 30–300 mm; Slotted carriers for 10×10 mm chips up to 8-inch wafers
- **Configurations:** Open semicylindrical, flat-bottom rectangular, lidded CVD boats, slotted wafer cradles
- **Typical Lead Time:** 5–12 business days
- **Documentation Included:** Manufacturer Lot Quartz Purity COA and dimensional/slot-width check sheet.

### Technical Overview
Semiconductor thin-film deposition, wafer annealing, and trace-metal analytical workflows require zero metallic cross-contamination below 1,150 °C. Fabricated from 99.99% semiconductor-grade fused quartz tubing and precision-slotted rods, our quartz sample boats and multi-slot substrate carriers withstand rapid furnace insertion and withdrawal without thermal-shock cracking.

Choose smooth fire-polished powder/liquid boats with end pull-rings, baffled two-zone CVD sulfur/selenium boats, or CNC-slotted carriers sized for 10×10 mm research dies through 2", 4", 6", and 8" silicon/sapphire wafers.

### Nominal Properties
- **Purity:** ≥99.99% SiO2 (<20 ppm total metallic impurities)
- **Max Operating Temp:** 1,100–1,150 °C
- **Slot Width Accuracy:** ±0.10 mm CNC diamond-slotted
- **Acid Cleanability:** Resistant to aqua regia, HCl, HNO3, H2SO4 (attacked only by HF / hot H3PO4)
- **Surface Finish:** Flame-polished smooth non-particulating finish

### Applications
- Vertical or angled wafer holding during thermal oxidation, annealing, and LPCVD
- Two-zone CVD chalcogenide (S, Se, Te) and precursor sublimation
- Trace-element semiconductor & pharmaceutical clean ashing
- Quartz push/pull hooks and baffled furnace thermal plugs

### Buyer Specification Guide
For sample boats, specify length × width × height, handle/ring style, and furnace tube ID. For wafer carriers, specify substrate size/shape (e.g., 10×10 mm square, 2" or 4" round), wafer thickness, slot pitch, number of slots (5, 10, 25), and furnace tube ID.

### Technical FAQs
- **Q: Can quartz wafer boats hold small 10×10 mm or 15×15 mm diced research chips?**
  A: Yes—miniature slotted quartz cradles and grooved flat-deck sleds are specifically built to hold 5×5 mm, 10×10 mm, 15×15 mm, and 25×25 mm substrates upright or at a controlled tilt angle inside 25–80 mm tube furnaces.
- **Q: How do researchers clean deposited CVD films off fused quartz boats?**
  A: Unlike alumina, fused quartz is completely non-porous and flame-polished, so most metal/chalcogenide deposits dissolve cleanly in nitric/hydrochloric acid baths or burn off in air bake-outs without trapping residues.
- **Q: Can you fabricate custom quartz push rods and radiation-baffle end plugs to match?**
  A: Yes—hooked quartz push/pull rods and evacuated or wool-filled quartz thermal plugs can be quoted alongside tubes and boats.

---
## Clear Fused Quartz Crucibles & Evaporating Dishes (`TB-SIO2-CR`)
- **URL:** https://tensilebase.com/products/quartz-crucibles-dishes/
- **Quote URL:** https://tensilebase.com/quote.html?product=quartz-crucibles-dishes
- **Category:** Fused Quartz & Substrates
- **Chemical Formula:** SiO2 (Elements: Si, O)
- **CAS Registry Number:** 60676-86-0
- **Synonyms:** Transparent silica crucible, trace-metal analysis quartz dish, high-purity quartz beaker, fused silica melting vessel
- **Purity / Grades:** ≥99.99% SiO2 Clear Fused Quartz
- **Typical Dimensions:** 10 mL to 1,000 mL crucibles, beakers, & flat dishes
- **Configurations:** High/low form crucibles with lids, pouring-spout dishes, quartz beakers
- **Typical Lead Time:** 5–12 business days
- **Documentation Included:** Manufacturer Lot Purity COA and dimensional/pack verification.

### Technical Overview
Clear 4N fused quartz crucibles and evaporating dishes eliminate boron, sodium, and transition-metal leaching found in borosilicate glassware or clay-bonded ceramics. Capable of plunging directly from a 1,000 °C muffle furnace onto a cooling block—or even into cold water—without shattering, transparent quartz vessels streamline analytical chemistry, rare-earth oxide calcination, and high-purity salt/acid processing.

Available in tall-form and low-form crucibles with fitted ring lids, round-bottom pour-spout evaporating dishes, and heavy-wall laboratory quartz beakers.

### Nominal Properties
- **Purity:** ≥99.99% SiO2
- **Continuous / Peak Temp:** 1,050–1,100 °C continuous / 1,200 °C short-term
- **Thermal Shock:** Withstands 1,000 °C to room-temperature quench
- **Wall Finish:** Transparent flame-glazed interior and exterior
- **Acid Inertness:** Inert to all mineral acids except HF and hot concentrated H3PO4

### Applications
- ICP-MS / trace-element sample digestion, pyrosulfate fusion, and dry ashing
- Phosphor, luminescent powder, and optical precursor calcination
- Rapid-quench salt/glass synthesis up to 1,100 °C
- Semiconductor wet-bench hot acid boiling (HNO3, H2SO4, HCl)

### Buyer Specification Guide
Specify vessel type (tall crucible, low crucible, spouted evaporating dish, or beaker), volume in mL (or top OD × height), lid requirement, and pack quantity.

### Technical FAQs
- **Q: What substances attack fused quartz crucibles?**
  A: Avoid hydrofluoric acid (HF), hot concentrated phosphoric acid (>250 °C), and molten alkali hydroxides/carbonates (NaOH, KOH, Li2CO3, basic fluxes), which react with SiO2.
- **Q: Are opaque/translucent large-volume fused silica crucibles also available?**
  A: Yes—for larger 1 L to 20+ L semiconductor/photovoltaic or metallurgical melts, arc-fused translucent quartz crucibles can be quoted to drawing.
- **Q: Can quartz crucibles be used in microwave muffle furnaces?**
  A: Yes—high-purity SiO2 has an extremely low dielectric loss tangent, making it nearly transparent to microwave energy while containing heated susceptors or samples.

---
## UV Fused Silica & Optical Quartz Windows (`TB-SIO2-WN`)
- **URL:** https://tensilebase.com/products/optical-quartz-windows/
- **Quote URL:** https://tensilebase.com/quote.html?product=optical-quartz-windows
- **Category:** Fused Quartz & Substrates
- **Chemical Formula:** SiO2 (Elements: Si, O)
- **CAS Registry Number:** 60676-86-0
- **Synonyms:** JGS1 synthetic UV fused silica window, JGS3 IR quartz disc, laser protective viewport blank, double-side polished fused silica wafer
- **Purity / Grades:** JGS1 (Deep-UV 185–2,100 nm) / JGS2 (UV-VIS) / JGS3 (IR Low-OH)
- **Typical Dimensions:** Ø 5–200 mm or Square 5×5 to 150×150 mm × Thickness 0.2–20 mm
- **Configurations:** Double-side optical polish (60/40, 40/20, 20/10), AR coatings, stepped viewports
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot Optical/Material COA (grade, transmission curve spec, scratch-dig & dimensional inspection); cleanroom single-wafer/tray packaging.

### Technical Overview
Optical-grade fused silica windows combine wide spectral transmission (from 185 nm deep-UV in synthetic JGS1 out to 3,500 nm mid-IR in anhydrous JGS3) with high laser-induced damage thresholds, vacuum viewport strength, and near-zero thermal lensing. Pitch-polished on both faces with protective edge bevels, these windows and thin wafer substrates serve spectroscopy cells, fiber/excimer laser protective heads, PVD optical monitoring ports, and MEMS/microfluidics fabrication.

Custom diameters, square/rectangular plates, drilled apertures, wedge angles, and anti-reflective (AR) coatings are quoted to optical print.

### Nominal Properties
- **Optical Grades:** JGS1 (185–2,100 nm, >90% UV), JGS2 (220–2,500 nm), JGS3 (260–3,500 nm)
- **Refractive Index (nd):** 1.4585 at 587.6 nm
- **Surface Quality:** 60/40 standard; 40/20 or 20/10 laser-grade scratch-dig
- **Flatness / Parallelism:** λ/4 to λ/10 flatness; ≤1–3 arcmin (or <10 arcsec precision)
- **Surface Roughness:** Ra < 0.5–1.0 nm optical polish

### Applications
- Deep-UV (193/248/266 nm) to NIR (1,064 nm) laser optics & protective debris windows
- Vacuum chamber sight glasses, furnace pyrometer viewports, and spectroscopy cuvettes
- Double-side polished 2", 3", 4", and 6" fused silica MEMS & photonics wafers
- Photolithography photomask blanks and microfluidic device bonding

### Buyer Specification Guide
Specify optical grade (JGS1 synthetic UV, JGS2 general optical/viewport, or JGS3 IR low-OH), diameter or L×W, thickness, scratch-dig surface quality, transmitted wavefront/flatness, parallelism, and any AR coating wavelength.

### Technical FAQs
- **Q: Which fused silica grade should I select: JGS1, JGS2, or JGS3?**
  A: Choose JGS1 (synthetic CVD fused silica, equivalent to Corning 7980 / Suprasil class) for deep-UV transmission down to 185 nm and zero fluorescence; JGS2 for economical visible/1,064 nm viewports and wafers; and JGS3 where 2.7 µm OH absorption bands must be eliminated in the infrared.
- **Q: Are thin 0.5 mm and 1.0 mm fused silica wafers shipped in cleanroom coin-style or cassette packs?**
  A: Yes—polished wafers and optical windows are individually packed in cleanroom single-wafer containers, gel-paks, or lint-free lens tissue sleeves.
- **Q: Can windows be fabricated with stepped shoulders for pressure or vacuum O-ring viewports?**
  A: Yes—stepped, beveled, and thick pressure-rated sight-glass blanks are CNC ground and optically polished to drawing.

---
## Single-Crystal Sapphire Windows & Substrates (`TB-SAP-SB`)
- **URL:** https://tensilebase.com/products/sapphire-windows-substrates/
- **Quote URL:** https://tensilebase.com/quote.html?product=sapphire-windows-substrates
- **Category:** Fused Quartz & Substrates
- **Chemical Formula:** α-Al2O3 (Single Crystal) (Elements: Al, O)
- **CAS Registry Number:** 1344-28-1
- **Synonyms:** C-plane (0001) epi-ready sapphire wafer, synthetic corundum high-pressure viewport, optical Al2O3 scratch-proof window, GaN/AlN growth substrate
- **Purity / Grades:** ≥99.995% Single-Crystal Al2O3 (4N5–5N Kyropoulos/EFG)
- **Typical Dimensions:** Chips 5×5, 10×10 mm; Windows Ø 5–100 mm; Wafers 2", 4", 6"
- **Configurations:** C-plane (0001), A-plane, R-plane, M-plane; SSP or DSP epi-ready
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot Crystal COA (crystal orientation X-ray off-cut tolerance, Ra roughness, thickness/TTV, scratch-dig) in Class-100 cleanroom single/pack cases.

### Technical Overview
Single-crystal alpha-Al2O3 (synthetic sapphire, Mohs hardness 9—second only to diamond and SiC/cBN) combines extreme mechanical strength and chemical inertness with broad optical transmission spanning UV (180 nm) through visible to mid-infrared (5.0 µm). In thin-film epitaxy and PVD research, epi-polished C-plane (0001), R-plane (1-102), and A-plane (11-20) substrates serve as the foundational lattice template for GaN, AlN, ZnO, superconducting YBCO, and 2D transition-metal dichalcogenide growth.

Available in pre-diced cleanroom research packs (5×5, 10×10, 10×15 mm), SEMI-standard 2"/4" wafers (single- or double-side epi-polished), and thick optical sight windows.

### Nominal Properties
- **Purity & Structure:** ≥99.995% monocrystalline trigonal α-Al2O3
- **Transmission Band:** 180 nm – 5,000 nm (>83–85% uncoated across VIS-MWIR)
- **Mohs / Knoop Hardness:** Mohs 9 (~2,000 kg/mm² Knoop)
- **Epi Surface Roughness:** Ra < 0.2–0.3 nm (CMP epi-ready finish)
- **Melting Point:** 2,040–2,053 °C (usable optically past 1,500 °C)

### Applications
- Epitaxial & PVD thin-film growth (GaN, AlN, ZnO, graphene, MoS2, oxides)
- High-pressure, subsea, and abrasive-environment optical viewports & IR domes
- Mid-IR spectroscopy (3–5 µm thermal imaging) and high-temperature furnace sight ports
- Precision ruby/sapphire orifice nozzles and ultra-hard bearing flats

### Buyer Specification Guide
For substrates, specify crystal orientation (C-, R-, A-, M-, or random optical), chip/wafer size, thickness (e.g., 0.43, 0.50, or 1.0 mm), SSP vs. DSP epi-polish, and SEMI flat. For optical windows, specify diameter × thickness, C-axis zero-birefringence orientation if polarization-sensitive, and scratch-dig.

### Technical FAQs
- **Q: What is the difference between SSP and DSP epi-ready sapphire substrates?**
  A: SSP (Single-Side Polished) has one CMP epi-ready growth surface (Ra <0.2 nm) and a fine-ground backside (Ra ~0.8–1.2 µm) conducive to radiative heater coupling, whereas DSP (Double-Side Polished) is optically transparent through both faces for transmission spectroscopy.
- **Q: Why specify C-axis (0001) orientation on optical sapphire windows?**
  A: Sapphire is weakly birefringent along random axes; cutting windows perpendicular to the optical C-axis (0001) minimizes birefringence along the normal beam path.
- **Q: Are 10×10 mm diced sapphire substrates supplied individually packed?**
  A: Yes—diced research substrates ship in cleanroom waffle packs or individual wafer trays (typically packs of 5, 10, or 25 substrates) ready for direct chamber loading.

---
## Graphite Crucibles (`TB-GR-CR`)
- **URL:** https://tensilebase.com/products/graphite-crucibles/
- **Quote URL:** https://tensilebase.com/quote.html?product=graphite-crucibles
- **Category:** Graphite Components
- **Chemical Formula:** C (Elements: C)
- **CAS Registry Number:** 7782-42-5
- **Synonyms:** High-purity isostatic graphite melting crucible, precious metal assay crucible, vacuum induction graphite pot
- **Purity / Grades:** 99.9% (Ash <500 ppm) to 99.995% Purified (<20–50 ppm Ash)
- **Typical Dimensions:** 5 mL lab cups to 50 kg induction melting crucibles
- **Configurations:** Cylindrical, spouted, induction-matched, lidded, pyrolytic/SiC coated
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Graphite Grade COA (bulk density, open porosity, shore hardness, electrical resistivity, and ash ppm) plus dimensional check.

### Technical Overview
Cold-isostatically pressed (CIP) fine-grain synthetic graphite combines isotropic thermal conductivity, complete immunity to thermal shock, natural molten-metal non-wetting (Au, Ag, Cu, Al, Sn, rare earths, brass), and increasing mechanical strength as temperature rises toward 2,500 °C in vacuum or inert atmospheres. Unlike clay-graphite foundry pots that introduce binder slag, pure machined isostatic graphite maintains clean melt chemistry.

Available in standard cylindrical, tapered, and pour-spout induction geometries or custom-turned from purified (<20–50 ppm ash) graphite billets with matching threaded or slip lids.

### Nominal Properties
- **Bulk Density:** 1.78–1.90 g/cm³ (isostatic fine-grain grades)
- **Average Grain Size:** 5–15 µm
- **Ash Content:** Standard <300–500 ppm; Halogen-purified <5–50 ppm
- **Max Service Temp:** ~450–500 °C (Air onset of oxidation) / 2,800 °C (Inert Ar/N2) / 2,200 °C (Vacuum)
- **Flexural Strength:** 45–75 MPa (increases ~25% at 2,000 °C)

### Applications
- Gold, silver, copper, and specialty non-ferrous induction & resistance melting
- Vacuum metallurgy, crystal growth (Bridgman / Czochralski susceptors), and distillation
- Pyrometallurgical fire assay, slag testing, and rare-earth fluoride reduction
- High-temperature salt and glass carbon-compatible processing

### Buyer Specification Guide
Specify crucible OD × ID × overall height × inner depth, melt alloy/material (avoid unprotected graphite for carbon-soluble Fe/Ni/Ti/Pt melts!), operating atmosphere, ash purity limit, lid style, and quantity.

### Technical FAQs
- **Q: Which molten metals should NOT be melted directly in bare graphite crucibles?**
  A: Iron, steel, nickel, cobalt, titanium, zirconium, and platinum readily dissolve carbon to form carbides or eutectic melts; for those metals, choose alumina, YSZ zirconia, or h-BN crucibles (or use graphite solely as an outer induction susceptor around a ceramic liner).
- **Q: When is halogen-purified (<20 ppm ash) graphite worth specifying?**
  A: Specify purified <20 ppm ash graphite for semiconductor crystal growth, solar/electronic silicon, optical fluorides, and 5N+ precious metal refining where trace Fe, V, or B from standard 300 ppm ash graphite cannot be tolerated.
- **Q: How do I maximize graphite crucible life when pouring in open air?**
  A: Graphite begins oxidizing slowly in air above ~450–500 °C; use a close-fitting graphite lid, inert Ar/N2 cover gas shroud, or request an anti-oxidation surface impregnation/coating for air-exposure pours.

---
## Custom Graphite Components (`TB-GR-CNC`)
- **URL:** https://tensilebase.com/products/custom-graphite-parts/
- **Quote URL:** https://tensilebase.com/quote.html?product=custom-graphite-parts
- **Category:** Graphite Components
- **Chemical Formula:** C (Elements: C)
- **CAS Registry Number:** 7782-42-5
- **Synonyms:** Vacuum furnace serpentine graphite heater, MOCVD/epitaxy susceptor, brazing boat & fixture, graphite EDM electrode & fastener
- **Purity / Grades:** Isostatic Grades (1.80–1.92 g/cm³); Purified <5–50 ppm Ash; SiC-Coated
- **Typical Dimensions:** 5-axis CNC machined from Ø 5 mm pins up to 800 mm furnace rings
- **Configurations:** Prototype 1–5 pcs to production; Halogen purification & CVD SiC/PyC coating
- **Typical Lead Time:** 10–18 business days
- **Documentation Included:** Manufacturer Grade Lot COA (density, resistivity, flexural strength, ash content) and CMM/caliper dimensional inspection report.

### Technical Overview
From intricate serpentine vacuum-furnace heating elements and threaded graphite tie-rods to pocketed brazing trays and RF induction susceptors, custom graphite components demand tight CNC dust-controlled machining paired with consistent grade properties (electrical resistivity, CTE, and density). Selecting the exact graphite grain size and resistivity ensures repeatable furnace power curves and zero part distortion during thermal cycling.

We quote both bare precision-machined isostatic parts and post-machining halogen-purified (<5–20 ppm ash) or pyrolytic-carbon / CVD-SiC surface-sealed components.

### Nominal Properties
- **Machining Tolerances:** ±0.02 to ±0.05 mm standard on precision features
- **Electrical Resistivity:** 9–16 µΩ·m (grade-matched for resistive heaters)
- **CTE Options:** 3.8–5.8 × 10⁻⁶ /K (CTE-matched grades available for SiC coating)
- **Grain Size Options:** Ultra-fine 2–5 µm (EDM/micro-detail) to 10–15 µm structural
- **Purification:** Post-machining Cl2/freon thermal purification to <5–20 ppm ash

### Applications
- Vacuum heat-treat & sintering furnace heating elements, connectors, and hearth rails
- Precision multi-cavity glass-to-metal sealing and vacuum brazing fixtures
- Induction susceptors, plasma PECVD electrode plates, and ion-implantation aperture parts
- Graphite bolts, hex nuts, washers, and threaded standoffs

### Buyer Specification Guide
Reference your 2D PDF + 3D STEP drawing, operating temperature and atmosphere, required ash purity, whether resistive heating (resistivity-critical) or structural use applies, and prototype vs. production batch size.

### Technical FAQs
- **Q: Why should halogen purification be performed AFTER CNC machining?**
  A: Purifying finished machined components removes any metallic trace contamination introduced by tooling or handling and achieves deep gas-phase purification across thin walls and pockets down to <5–20 ppm total ash.
- **Q: Why does electrical resistivity matter when replacing a graphite furnace heater?**
  A: Replacing a resistive heater with an arbitrary graphite block can alter circuit resistance by 30–50%, overloading or underpowering the furnace transformer. Share your existing grade code or resistivity spec (µΩ·m) so an equivalent grade is selected.
- **Q: Can threaded graphite bolts and nuts be supplied alongside furnace fixtures?**
  A: Yes—CNC-milled coarse and metric pitch graphite bolts, nuts, washers, and dowel pins are routinely supplied as complete hot-zone hardware kits.

---
## Graphite Plates & Blocks (`TB-GR-PL`)
- **URL:** https://tensilebase.com/products/graphite-plates/
- **Quote URL:** https://tensilebase.com/quote.html?product=graphite-plates
- **Category:** Graphite Components
- **Chemical Formula:** C (Elements: C)
- **CAS Registry Number:** 7782-42-5
- **Synonyms:** Isostatic EDM graphite block, resin-impregnated fuel-cell bipolar graphite plate, vacuum sintering setter plate, glass-handling carbon pad
- **Purity / Grades:** Molded Fine-Grain & Isostatic High-Density (99.9%–99.99% C)
- **Typical Dimensions:** Plates 1–100 mm thick; Blocks & Rods cut and surface-ground to size
- **Configurations:** Saw-cut blanks, precision 6-side ground plates, bipolar flow-field plates
- **Typical Lead Time:** 5–12 business days
- **Documentation Included:** Manufacturer Grade COA (density, resistivity, flexural strength, ash) and cut/ground dimensional verification.

### Technical Overview
Stock-shape and surface-ground graphite plates, blocks, and round bars serve both in-house R&D machine shops and direct industrial processes—ranging from flat vacuum-sintering setter plates for hardmetals and ceramics to sinker EDM electrode blanks, hot-glass take-out pads, and CNC-grooved fuel-cell/redox-flow-battery bipolar plates.

Available in economical molded fine-grain grades, isotropic CIP high-density grades (1.82–1.90 g/cm³), and gas-impermeable phenolic/furan resin-impregnated plates for electrochemical cells below 180 °C.

### Nominal Properties
- **Bulk Density:** 1.75–1.90 g/cm³ (unimpregnated); ~1.92 g/cm³ (resin-impregnated)
- **Shore D / Scleroscope Hardness:** 55–78 HSD
- **Thermal Conductivity:** 85–130 W/m·K
- **Flatness / Thickness Tolerance:** ±0.03–0.05 mm on surface-ground plates
- **Standard Purity:** ≥99.9% C (<200–500 ppm ash); <30 ppm purified available

### Applications
- Vacuum furnace sintering trays and cemented-carbide / MIM setter plates
- Precision sinker EDM electrode blanks and cleanroom machining stock
- PEM fuel cell and vanadium redox flow battery (VRFB) bipolar flow-field plates
- Glass-blowing marvers, run-out tables, and high-temperature dry lubrication pads

### Buyer Specification Guide
Specify length × width × thickness (or rod diameter × length), surface finish (saw-cut blank with machining allowance vs. 6-side precision ground), isostatic vs. molded vs. resin-impregnated grade, and quantity.

### Technical FAQs
- **Q: Are standard sintered graphite plates gas-tight for electrochemical flow cells?**
  A: Standard synthetic graphite has ~8–13% open micro-porosity; for leak-tight fuel-cell or redox-flow bipolar plates below 180 °C, specify resin-impregnated impermeable graphite or glassy (vitreous) carbon plates.
- **Q: What is the advantage of isostatic (CIP) graphite over extruded or vibration-molded graphite?**
  A: Isostatic graphite has uniform 5–15 µm grain structure with identical mechanical, electrical, and thermal expansion properties in all three axes (isotropic), holding crisp edges and tight tolerances without directional warping.
- **Q: Can thin 1 mm to 3 mm precision-ground graphite sheets be shipped safely without snapping?**
  A: Yes—thin ground graphite sheets are sandwiched between rigid stiffener boards and vacuum-sealed inside shock-absorbing foam cartons.

---
## Graphite Ingot Casting & Hot-Press Sintering Molds (`TB-GR-MLD`)
- **URL:** https://tensilebase.com/products/graphite-casting-sintering-molds/
- **Quote URL:** https://tensilebase.com/quote.html?product=graphite-casting-sintering-molds
- **Category:** Graphite Components
- **Chemical Formula:** C (Elements: C)
- **CAS Registry Number:** 7782-42-5
- **Synonyms:** Spark plasma sintering (SPS / FAST) graphite die & punch set, vacuum hot-press graphite sleeve, precious metal bar ingot mold, continuous casting graphite die
- **Purity / Grades:** High-Strength High-Density Isostatic Graphite (1.85–1.92 g/cm³)
- **Typical Dimensions:** Ingot molds, continuous-casting dies, & SPS / Hot-Press die-punch sets
- **Configurations:** Single/multi-cavity ingot molds, split molds, SPS dies (Ø 10–100 mm ID) + punches
- **Typical Lead Time:** 7–15 business days
- **Documentation Included:** Manufacturer Mechanical & Physical Grade COA (compressive/flexural strength, resistivity, density, ash) and bore/punch clearance inspection.

### Technical Overview
Spark Plasma Sintering (SPS / FAST), uniaxial vacuum hot pressing, diamond-segment sintering, and continuous non-ferrous strip/rod casting push graphite to its mechanical limit under simultaneous uniaxial pressure (30–80 MPa) and high-current Joule heating up to 2,200 °C. Using high-strength ultra-fine isostatic graphite (compressive strength 110–150 MPa) maximizes clamping pressure ratings while delivering mirror-smooth cavity walls for clean part ejection.

We supply complete matched SPS die + upper/lower punch + spacer sets (plus flexible graphite foil liner rolls), split ingot molds, and continuous casting dies.

### Nominal Properties
- **Compressive Strength:** 105–155 MPa (high-strength SPS grade)
- **Flexural Strength:** 55–85 MPa
- **Bulk Density:** 1.84–1.92 g/cm³
- **Typical Uniaxial SPS Pressure:** Up to 50–80 MPa (geometry & wall-ratio dependent)
- **Cavity Surface Finish:** Fine-turned / polished Ra 0.4–1.6 µm

### Applications
- Spark Plasma Sintering (SPS / FAST) research & production die-and-punch tooling
- Uniaxial vacuum hot-pressing molds for ceramics, sputtering targets, and composites
- Continuous casting dies for OFHC copper, bronze, brass, and precious metal rod/strip
- Polished multi-cavity bullion, alloy button, and glass slumping molds

### Buyer Specification Guide
For SPS/hot-press sets, specify inner bore ID (e.g., 10, 15, 20, 25, 30, 50 mm), outer die OD, die height, punch length, punch-to-die diametral clearance (accounting for 0.15–0.2 mm flexible graphite foil if used!), thermocouple sight hole depth/diameter, and max uniaxial load.

### Technical FAQs
- **Q: How much clearance should be machined between SPS punches and the graphite die bore?**
  A: When lining the bore with standard 0.2 mm (or 0.13 mm) flexible Grafoil paper, punches are typically turned 0.40–0.45 mm (or ~0.30 mm) smaller than the die ID so the foil slides smoothly without binding or powder extrusion.
- **Q: Can you bundle flexible graphite foil (paper) and carbon felt sleeves with SPS die sets?**
  A: Yes—pre-cut flexible graphite foil sheets/discs and outer carbon-felt thermal jackets for SPS dies (to cut radiative heat loss above 1,200 °C) can be included on the same RFQ.
- **Q: How do I prevent reactive ceramic/metal powders from carburizing against an SPS graphite punch?**
  A: Line the punch faces with h-BN spray, thin tungsten/molybdenum/tantalum barrier foils, or pyrolytic graphite discs—all available through Tensile Base.

---
## Rigid & Soft Graphite Vacuum Furnace Insulation Felt (`TB-GR-FLT`)
- **URL:** https://tensilebase.com/products/graphite-thermal-insulation-felt/
- **Quote URL:** https://tensilebase.com/quote.html?product=graphite-thermal-insulation-felt
- **Category:** Graphite Components
- **Chemical Formula:** C (Elements: C)
- **CAS Registry Number:** 7782-42-5
- **Synonyms:** Graphitized PAN soft felt, rigid carbon-bonded fiber insulation cylinder, redox flow battery porous graphite electrode felt, SPS die thermal jacket
- **Purity / Grades:** ≥99.0%–99.9% Graphitized PAN / Rayon Carbon (<100–500 ppm Ash)
- **Typical Dimensions:** Soft rolls/mats 3–20 mm thick; Rigid boards/cylinders 10–100 mm thick
- **Configurations:** PAN or Rayon soft felt, resin-cured rigid felt cylinders/boards, CFC foil-faced
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (carbon %, ash ppm, areal/bulk density, thermal conductivity spec).

### Technical Overview
Graphitized above 2,200 °C in inert furnaces, PAN- and rayon-based graphite felts achieve ultra-low thermal conductivity, minimal moisture adsorption, and low volatile outgassing inside vacuum and inert-gas hot zones up to 2,800 °C. Rigid carbon-bonded insulation boards and cylinders—optionally faced with reflective graphite foil or protective C/C composite sheet—provide self-supporting hot-zone barrels for heat-treatment, SiC crystal growth (PVT), and solar ingot furnaces.

Hydrophilically surface-treated PAN graphite felts are also supplied for vanadium, iron-chromium, and zinc-bromine redox flow battery (RFB) porous electrodes.

### Nominal Properties
- **Carbon Purity:** ≥99.2% standard; ≥99.9% (<50–100 ppm ash) semiconductor grade
- **Bulk Density:** 0.08–0.12 g/cm³ (soft felt) / 0.16–0.22 g/cm³ (rigid board/cylinder)
- **Thermal Conductivity (1,500 °C Vac):** ~0.25–0.45 W/m·K
- **Max Operating Temp:** 350 °C (Air) / 2,000–2,200 °C (Vacuum) / up to 2,800 °C (Inert Ar)
- **Standard Thicknesses:** 3, 5, 6, 8, 10, 12 mm (soft); 15–100 mm (rigid)

### Applications
- Vacuum & inert-gas sintering, brazing, and crystal-growth furnace hot-zone insulation
- Induction coil wrap jackets and Spark Plasma Sintering (SPS) die radiation sleeves
- Vanadium and iron-chromium Redox Flow Battery (RFB) porous electrode felts
- High-temperature inert filtration and thermal cushions

### Buyer Specification Guide
Specify soft flexible roll/sheet vs. self-supporting rigid board/cylinder, precursor (PAN vs. lower-conductivity Rayon) or RFB battery-activated grade, thickness, L×W or ID×OD×H dimensions, graphite foil facing needs, and ash purity limit.

### Technical FAQs
- **Q: When should I choose Rayon-based vs. PAN-based graphite felt?**
  A: PAN-based graphite felt has higher fiber strength, cleaner handling, and dominates standard vacuum furnaces up to 2,000 °C plus redox flow batteries; Rayon-based graphite felt achieves ~20–30% lower radiative thermal conductivity above 1,800 °C, favored in ultra-high-temp SiC/sapphire crystal growth.
- **Q: Is thermal hydrophilicity activation available on graphite felt for vanadium redox flow batteries?**
  A: Yes—specify electrochemically/thermally activated RFB electrode felt so electrolyte wets the porous carbon fibers immediately with low cell ohmic resistance.
- **Q: Can rigid graphite insulation cylinders be shipped pre-slotted with sight-port holes?**
  A: Yes—rigid cylinders, end discs, and stepped rings are CNC machined to hot-zone print with graphite foil or C/C inner hot-face linings bonded on request.

---
## Pyrolytic Graphite & Glassy (Vitreous) Carbon (`TB-PG-GC`)
- **URL:** https://tensilebase.com/products/pyrolytic-glassy-carbon/
- **Quote URL:** https://tensilebase.com/quote.html?product=pyrolytic-glassy-carbon
- **Category:** Graphite Components
- **Chemical Formula:** C (Elements: C)
- **CAS Registry Number:** 7440-44-0
- **Synonyms:** CVD pyrolytic graphite diamagnetic levitation plate, vitreous carbon RDE electrochemical electrode, HOPG substrate, gas-impermeable carbon crucible
- **Purity / Grades:** ≥99.999% (5N CVD Pyrolytic Graphite & Polymeric Glassy Carbon)
- **Typical Dimensions:** PG plates 0.5–12 mm; Glassy carbon rods, plates, wafers, & crucibles
- **Configurations:** As-deposited PG, HOPG mosaic grades, Vitreous carbon plates/rods/crucibles
- **Typical Lead Time:** 10–18 business days
- **Documentation Included:** Manufacturer Lot COA (purity/ash ppm, density, resistivity, and dimensional/roughness check).

### Technical Overview
Specialty non-porous carbons solve two problems isotropic sintered graphite cannot: CVD Pyrolytic Graphite (PG) possesses highly aligned graphene planes delivering massive in-plane thermal conductivity (~300–400 W/m·K) alongside perpendicular thermal insulation (~2–3 W/m·K) and strong room-temperature diamagnetism; meanwhile, Glassy (Vitreous) Carbon combines fullerene-like ribbon microstructure with zero open porosity, ceramic-like hardness, zero particle shedding, and wide electrochemical potential windows.

Supplied as pyrolytic graphite plates/discs/crucible coatings, and mirror-polished glassy carbon plates (1–6 mm), rotating-disk electrode (RDE) rods, and analytical fusion crucibles.

### Nominal Properties
- **Purity:** ≥99.995%–99.999% C (<5–20 ppm total ash)
- **Open Porosity / Gas Permeability:** 0% open porosity; He permeability ~10⁻⁹ to 10⁻¹¹ cm²/s
- **Bulk Density:** 2.18–2.22 g/cm³ (Pyrolytic Graphite) / 1.42–1.54 g/cm³ (Glassy Carbon)
- **Thermal Anisotropy (PG):** ab-plane ~350 W/m·K vs. c-axis ~2.5 W/m·K
- **Surface Polish (Glassy Carbon):** Mirror polish Ra < 10–25 nm available

### Applications
- Electrochemical working electrodes, RDE pins, and corrosion-free current collectors (Glassy Carbon)
- Trace analytical HF/HNO3 acid digestion & alkali fusion crucibles (Glassy Carbon)
- Anisotropic heat spreaders, X-ray/neutron optics, and passive diamagnetic levitation (Pyrolytic Graphite)
- Zero-particulate semiconductor e-beam evaporation liners and plasma etch rings

### Buyer Specification Guide
Specify Pyrolytic Graphite (anisotropic CVD carbon or HOPG mosaic angle ZYA/ZYB/ZYH) vs. Glassy/Vitreous Carbon (isotropic glassy mirror finish), form (plate, disc, rod, or crucible), dimensions, and surface finish.

### Technical FAQs
- **Q: What is the key structural difference between pyrolytic graphite and glassy (vitreous) carbon?**
  A: Pyrolytic graphite is grown via high-temperature hydrocarbon CVD into highly ordered parallel graphene sheets (anisotropic, cleavable, strongly diamagnetic), whereas glassy carbon is pyrolyzed from thermosetting resin into an isotropic, amorphous ribbon network that fractures conchoidally like glass and takes a mirror polish.
- **Q: Can glassy carbon plates withstand hydrofluoric acid (HF) and molten salts?**
  A: Yes—unlike quartz or ceramics, vitreous carbon is completely inert to hydrofluoric acid, non-oxidizing mineral acids, alkalis, and non-carburizing molten halide salts.
- **Q: Which pyrolytic graphite orientation levitates passively over NdFeB permanent magnets?**
  A: Standard CVD pyrolytic graphite plates have their c-axis perpendicular to the plate face (ab-plane parallel to the face), producing maximum repulsive diamagnetic susceptibility perpendicular to the flat sheet.

---
## Metal Sputtering Targets (`TB-PVD-MT`)
- **URL:** https://tensilebase.com/products/sputtering-targets/
- **Quote URL:** https://tensilebase.com/quote.html?product=sputtering-targets
- **Category:** Thin Film Materials
- **Chemical Formula:** Ti / Cr / Al / Cu / Ni / W / Mo / Ta (Elements: Ti, Cr, Al, Cu, Ni, W, Mo, Ta)
- **CAS Registry Number:** 7440-32-6
- **Synonyms:** Magnetron PVD planar sputtering disc, 4N5 titanium/chromium/aluminum target, indium-bonded sputter cathode target
- **Purity / Grades:** 3N5 (99.95%) / 4N (99.99%) / 4N5 / 5N (99.999%)
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 1–12.7 mm; Rectangular plates
- **Configurations:** Monolithic, stepped flange, OFHC Cu/Mo backing plate + Indium/Elastomer bond
- **Typical Lead Time:** 7–15 business days (common metals) / 2–4 weeks (custom alloys)
- **Documentation Included:** Manufacturer Lot COA (ICP-OES or GDMS trace metallic impurities in ppm), dimensional check, and ultrasonic bond verification when bonded.

### Technical Overview
Consistent thin-film sheet resistance, stress, and step coverage start with controlled target metallurgy: vacuum induction or electron-beam melted ingots thermomechanically rolled and recrystallized to fine, uniform grain sizes (<30–100 µm) with minimal trapped gas. We supply non-precious pure metals (Ti, Cr, Al, Cu, Ni, Co, Fe, V, W, Mo, Ta, Nb, Zr, Hf, Si, Ge, Sn, Bi, Zn) and binary/ternary alloys across 1-inch to 8-inch circular and rectangular cathode formats.

Targets are supplied monolithic or indium-/elastomer-bonded to OFHC copper or molybdenum backing plates, vacuum-sealed in argon/nitrogen barrier bags with lot GDMS or ICP-OES trace-element COA.

### Nominal Properties
- **Purity Tiers:** 99.95% (3N5), 99.99% (4N), 99.995% (4N5), 99.999% (5N)
- **Relative Density:** ≥99.5%–100% wrought vacuum-melted density
- **Average Grain Size:** Controlled fine equiaxed (<50–100 µm typical)
- **Standard Research Diameters:** 25.4 mm (1"), 50.8 mm (2"), 76.2 mm (3"), 100/101.6 mm (4")
- **Bonding Options:** Metallic Indium (>95% wet coverage) or High-Temp Silver Elastomer

### Applications
- DC and RF magnetron PVD metallization, adhesion layers (Ti, Cr), and barrier films (Ta, TiW, WN)
- MEMS, photonic mirror coatings, and microelectronic wafer prototyping
- Magnetic thin-film stacks (NiFe, CoFeB, FePt; thin 0.5–2.0 mm high-permeability targets)
- Hard wear and decorative PVD nitride/carbide reactive sputtering

### Buyer Specification Guide
Specify element or atomic/weight-% alloy composition, purity (e.g., 4N vs. 5N), exact diameter and thickness (note thinner 1–2 mm requirement for ferromagnetic Ni/Fe/Co targets!), flat edge vs. stepped clamp lip, sputter gun model (Lesker Torus, AJA, Angstrom, Ulvac, Denton), and backing/bonding needs.

### Technical FAQs
- **Q: Why do magnetic sputtering targets (Ni, Fe, Co) need thinner 1.0–2.0 mm thicknesses?**
  A: Ferromagnetic targets shunt the magnetron's permanent magnetic field internally if too thick, preventing plasma ignition; specifying 1.0–2.0 mm thickness allows magnetic flux pass-through on standard magnetron guns.
- **Q: When is metallic indium bonding required on a metal sputtering target?**
  A: Ductile high-conductivity metals (Cu, Al, Ti) at moderate power often clamp monolithically, whereas brittle metals (Cr, Si, Ge, Bi, W), thin targets, or high-watt-density runs benefit from indium bonding to an OFHC copper backing plate for efficient water cooling.
- **Q: How are reactive or oxidation-prone targets packaged?**
  A: Every target is solvent/DI cleaned, cleanroom dried, and vacuum-sealed (or argon back-filled) inside foil moisture-barrier bags with individual lot COA tags.

---
## Oxide & Nitride Ceramic Sputtering Targets (`TB-PVD-OX`)
- **URL:** https://tensilebase.com/products/ceramic-oxide-sputtering-targets/
- **Quote URL:** https://tensilebase.com/quote.html?product=ceramic-oxide-sputtering-targets
- **Category:** Thin Film Materials
- **Chemical Formula:** ITO / ZnO / Al2O3 / SiO2 / TiO2 / AlN / SiC (Elements: In, Sn, Zn, Al, Si, Ti, O, N)
- **CAS Registry Number:** 50926-11-9
- **Synonyms:** ITO 90/10 In2O3:SnO2 TCO target, AZO Al-doped ZnO target, RF dielectric Al2O3/SiO2/TiO2/HfO2 sputter target, LTO/LLZO thin-film battery target
- **Purity / Grades:** 99.9% (3N) / 99.99% (4N) / 99.995% (4N5)
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6" × Thickness 2–6 mm (+ Cu Backing Plate)
- **Configurations:** Hot-pressed / HIP / oxygen-sintered high-density discs; Indium bonded
- **Typical Lead Time:** 10–18 business days
- **Documentation Included:** Manufacturer Lot COA (composition stoichiometry, trace metal ICP assay, sintered density) and backing-plate bond inspection.

### Technical Overview
Dielectric and transparent-conducting-oxide (TCO) ceramic sputtering targets require high sintered relative density (≥98%–99.5% for ITO/ZnO) and uniform stoichiometry to suppress nodule growth, micro-arcing, and thermal cracking under RF or pulsed-DC magnetron plasma. Because ceramics have low thermal shock tolerance, bonding to an OFHC copper backing plate with pure metallic indium is strongly recommended for reliable heat extraction.

Standard compositions include ITO (In2O3:SnO2 90:10 wt%), AZO (ZnO:Al2O3 98:2 wt%), IGZO, ZnO, Al2O3, SiO2, TiO2, Ta2O5, Nb2O5, HfO2, ZrO2/YSZ, BaTiO3, LiCoO2/Li3PO4 battery oxides, AlN, Si3N4, TiN, and SiC.

### Nominal Properties
- **Purity:** 99.9% (3N) to 99.995% (4N5)
- **Relative Sintered Density:** ≥99.5% (ITO) / 95%–99% (oxides & nitrides by HIP/hot-pressing)
- **Recommended Bonding:** Metallic Indium bond to OFHC Cu backing plate (max target temp <150 °C)
- **RF Power Ramp:** Gradual RF power conditioning (5–10 W/min) recommended
- **Standard Thicknesses:** 3.0 mm, 3.175 mm (1/8"), 5.0 mm, 6.35 mm (1/4")

### Applications
- Transparent conductive electrodes (ITO, AZO, IZO) for photovoltaics, displays, and sensors
- Optical anti-reflection, high-index/low-index dielectric mirrors, and waveguide coatings (SiO2, TiO2, Ta2O5, HfO2)
- Gate dielectrics, piezoelectric MEMS (AlN, ZnO, PZT), and ferroelectrics
- Solid-state thin-film microbattery cathode & LiPON/LLZO electrolyte deposition

### Buyer Specification Guide
Specify exact chemical formula and weight/mole dopant ratio (e.g., In2O3:SnO2 90:10 wt%), purity, target diameter × ceramic thickness, backing plate total thickness/step geometry (or gun model), and indium vs. elastomer bond.

### Technical FAQs
- **Q: Why should ceramic sputtering targets almost always be indium-bonded to a copper backing plate?**
  A: Ceramic targets have poor thermal conductivity and tensile strength; local plasma heating without full-face metallic indium thermal contact to a water-cooled copper backing plate will crack an unbonded ceramic disc even at modest RF wattages.
- **Q: What is the maximum operating temperature of an indium-bonded target?**
  A: Pure indium melts at 156.6 °C—always verify cooling water flow (typically ≥2–4 L/min at 18–22 °C) before striking plasma and ramp RF power gradually so bondline temperature stays safely below 120 °C.
- **Q: Can custom multi-cation perovskite or solid-state battery oxide targets be synthesized to stoichiometry?**
  A: Yes—custom mixed-oxide and lithium-excess stoichiometric targets (e.g., 10–15 mol% Li excess to compensate PVD lithium loss) are hot-pressed to customer formula.

---
## Evaporation Materials (`TB-PVD-EV`)
- **URL:** https://tensilebase.com/products/evaporation-materials/
- **Quote URL:** https://tensilebase.com/quote.html?product=evaporation-materials
- **Category:** Thin Film Materials
- **Chemical Formula:** Al / Cu / Ti / Cr / Ni / Ge / SiO2 / MgF2 / TiO2 (Elements: Al, Cu, Ti, Cr, Ni, Ge, Si, Mg)
- **CAS Registry Number:** 7429-90-5
- **Synonyms:** E-beam evaporation starter pellets, thermal evaporation metal slugs & wire clips, optical coating MgF2/SiO2/Ti3O5 granules, 5N vacuum deposition shot
- **Purity / Grades:** 4N (99.99%) / 4N5 / 5N (99.999%) Vacuum-Degassed
- **Typical Dimensions:** 1–3 mm & 3–6 mm granules/shots, Ø 3×3 or 6×6 mm pellets, starter sources
- **Configurations:** Base & refractory metals, optical fluorides/oxides, pre-melted e-beam slugs
- **Typical Lead Time:** 5–12 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP trace impurity ppm breakdown) and net-weight sealed lot label.

### Technical Overview
Spitting, outgassing pressure bursts, and pinhole defects in electron-beam and resistive thermal evaporation stem from trapped gas pockets or surface oxides in raw metal stock. Our evaporation metals (Al, Cu, Ti, Cr, Ni, Fe, Co, Ge, Si, Sn, In, W, Mo, Ta, V) and optical coating dielectrics (SiO2, Al2O3, TiO2 / pre-reduced Ti3O5, ZrO2, HfO2, MgF2) are vacuum-melted or vacuum-sintered to uniform pellet and granule sizing tailored for pocket liners and resistive boats.

Packaged by weight (50 g, 100 g, 250 g, 500 g, 1 kg) or piece count in argon-flushed containers with batch trace-metal COA.

### Nominal Properties
- **Purity Grades:** 99.99% (4N), 99.995% (4N5), 99.999% (5N)
- **Standard Metal Pellet Sizes:** Ø 3×3 mm, Ø 6×6 mm, Ø 6×12 mm cylindrical slugs; 1–3 & 3–6 mm shot
- **Optical Oxide Granules:** 1–3 mm or 2–5 mm sintered low-spit granules & tablets
- **Pre-Conditioning:** Vacuum degassed / clean acid-etched / inert packed
- **Pack Increments:** 50 g, 100 g, 250 g, 500 g, 1,000 g lots

### Applications
- Semiconductor lift-off metallization (Ti/Al, Cr/Cu, Ni/Ge ohmic contacts)
- Precision optical thin-film interference filters, AR coatings, and laser mirrors (SiO2, Ti3O5, Ta2O5, MgF2)
- OLED, perovskite solar cell, and sensor electrode thermal evaporation
- Pre-melted hearth starter charges for 4 cc to 40 cc e-beam pockets

### Buyer Specification Guide
Specify element or compound (note sub-oxides like Ti3O5 if preferred over TiO2 for stable O2 stoichiometry!), purity (4N vs. 5N), pellet/granule size (mm), e-beam vs. resistive boat method, pocket volume (cc), and total weight in grams.

### Technical FAQs
- **Q: Why do optical coaters prefer Ti3O5 tablets/granules over white TiO2 for e-beam evaporation?**
  A: Stoichiometric TiO2 loses oxygen unevenly when first melted by an electron beam, causing pressure spikes and shifting refractive index; pre-reduced black semiconducting Ti3O5 melts smoothly with minimal outgassing and predictable O2 backfill stoichiometry.
- **Q: Which crucible liner matches aluminum, titanium, or chromium e-beam evaporation?**
  A: Aluminum typically uses intermetallic/nitride or vitreous-carbon/BN liners (avoiding molten Al alloying constraints); Titanium is often evaporated directly from water-cooled Cu hearths or Fabmate/graphite barriers; Chromium sublimes cleanly from tungsten boats or graphite/Cu liners.
- **Q: Are chromium evaporation rods or tungsten-plated Cr rods available for resistive sources?**
  A: Yes—both high-purity Cr sublimation granules/chunks for boats and Cr-coated tungsten evaporation rods can be quoted.

---
## E-Beam Evaporation Crucible Pocket Liners (`TB-PVD-LN`)
- **URL:** https://tensilebase.com/products/ebeam-crucible-liners/
- **Quote URL:** https://tensilebase.com/quote.html?product=ebeam-crucible-liners
- **Category:** Thin Film Materials
- **Chemical Formula:** Cu / C (Graphite & Vitreous) / Mo / W / Al2O3 / BN (Elements: Cu, C, Mo, W, Al, B)
- **CAS Registry Number:** 7440-50-8
- **Synonyms:** Electron-beam gun hearth liner cup, vitreous carbon cone liner, OFHC copper pocket crucible, Fabmate-equivalent impermeable graphite liner
- **Purity / Grades:** OFHC Cu (99.99%), Purified Graphite/Vitreous C (<20 ppm), 99.95% Mo/W
- **Typical Dimensions:** 2 cc, 4 cc, 7 cc, 8 cc, 15 cc, 25 cc, 30 cc, 40 cc, & 100 cc
- **Configurations:** Standard 15° tapered wall pockets compatible with Telemark, Temescal, Ferrotec, Inficon, Jeol
- **Typical Lead Time:** 5–12 business days
- **Documentation Included:** Manufacturer Material Lot COA and critical top-OD / bottom-OD / height / taper angle dimensional check.

### Technical Overview
Electron-beam crucible liners act as a calibrated thermal barrier between your molten evaporant and the water-cooled copper hearth—dramatically boosting deposition rate at lower e-beam filament power while preventing cross-contamination across multi-pocket turrets. Machined to standard 15° side-wall tapers (2 cc mini-guns through 40 cc and 100 cc production pockets), our liners drop directly into Telemark, Temescal, Ferrotec, Leybold, Ulvac, and Angstrom e-beam sources.

Choose OFHC copper for high-thermal-transfer metals/oxides, high-strength impermeable graphite or glassy vitreous carbon for gold/aluminum/metals, molybdenum or tungsten for refractory/oxide melts, or alumina/h-BN ceramic inserts.

### Nominal Properties
- **Standard Pocket Volumes:** 2, 4, 6, 7, 8, 12, 15, 25, 30, 40, and 100 cc
- **Taper & Fit:** Precision CNC turned (15° standard wall taper or custom print)
- **Carbon Grades:** Purified fine-grain graphite, Impermeable PyC-sealed graphite, Solid Vitreous Carbon
- **Metal/Ceramic Grades:** OFHC Cu (C10100), 99.95% Mo, 99.95% W, 99.8% Al2O3, Pure h-BN
- **Cleanliness:** Solvent/DI cleaned & cleanroom sealed

### Applications
- Multi-pocket electron-beam evaporator hearth protection & quick material changeover
- Thermal-barrier rate enhancement for high-melting metals and dielectrics
- Preventing molten Al, Au, Ag, Pt, or Ni from wetting or eroding gun hearths
- Cleanroom semiconductor lift-off and optical box-coater production runs

### Buyer Specification Guide
Specify e-beam gun brand/model OR exact pocket top OD × bottom OD × overall height × wall thickness (critical: keep ~0.5 mm clearance or match gun spec—graphite/ceramic thermal liners are deliberately slightly undersized so they thermally isolate from the water-cooled hearth!), liner material, evaporant metal/oxide, and pack quantity.

### Technical FAQs
- **Q: Should a graphite or molybdenum e-beam liner sit tight or slightly loose in the copper hearth?**
  A: Thermal-barrier liners (graphite, vitreous carbon, Mo, W, Al2O3) are intentionally machined with a small radial air/vacuum gap so they do not dump all e-beam heat into the water-cooled hearth; conversely, OFHC copper liners match the hearth taper snugly to maximize cooling.
- **Q: Which liner material prevents molten aluminum from creeping up the pocket wall?**
  A: Impermeable pyrolytic-sealed graphite, vitreous carbon, or composite BN/TiB2 liners are widely used for aluminum, paired with keeping fill volume below 60% and sweeping the e-beam inside the pocket rim.
- **Q: What pack sizes are available for e-beam liners?**
  A: Liners can be quoted individually for tungsten/vitreous carbon or in economical packs of 5, 10, or 25 pieces for copper and graphite consumables.

---
## Tungsten, Molybdenum & Tantalum Evaporation Boats (`TB-PVD-BT`)
- **URL:** https://tensilebase.com/products/thermal-evaporation-boats/
- **Quote URL:** https://tensilebase.com/quote.html?product=thermal-evaporation-boats
- **Category:** Thin Film Materials
- **Chemical Formula:** W / Mo / Ta (Elements: W, Mo, Ta)
- **CAS Registry Number:** 7440-33-7
- **Synonyms:** Resistive PVD dimple boat, baffled tantalum organic/SiO evaporation box source, stranded tungsten wire filament basket, Lesker/Mathis boat equivalent
- **Purity / Grades:** ≥99.95% W, Mo, & Ta Vacuum-Grade Refractory Sheet/Wire
- **Typical Dimensions:** Lengths 50–150 mm × Thickness 0.005"–0.020" (0.127–0.50 mm); Wire baskets
- **Configurations:** Dimpled boats, canoe/trough boats, baffled box SiO/organic sources, W coil baskets
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot Metal Purity COA (≥99.95% W/Mo/Ta assay) and gauge/geometry verification.

### Technical Overview
Resistive thermal evaporation remains the simplest, lowest-radiation-damage PVD technique for contacts, organic semiconductors, halide perovskites, chalcogenides, and metal films. Stamped and precision-formed from ductile vacuum-grade 99.95% tungsten, molybdenum, and tantalum strip (0.127 mm / 0.005" to 0.50 mm / 0.020" thick), our resistive boats deliver predictable current-temperature profiles across low-voltage high-current clamping posts.

We also supply multi-strand twisted tungsten wire baskets (for Al wetting or crucible heating), alumina-coated tungsten boats (preventing molten metal alloying with bare W), and baffled chimney box boats eliminating spitting for SiO, ZnS, and organic/perovskite precursors.

### Nominal Properties
- **Metal Purities:** ≥99.95% W (mp 3,422 °C), ≥99.95% Mo (mp 2,623 °C), ≥99.95% Ta (mp 3,017 °C)
- **Standard Strip Gauges:** 0.127 mm (0.005"), 0.254 mm (0.010"), 0.381 mm (0.015"), 0.508 mm (0.020")
- **Standard Lengths:** 50 mm (2"), 76 mm (3"), 100 mm (4") clamping span
- **Specialty Variants:** Plasma-sprayed Al2O3-coated boats; 2/3-piece baffled chimney boxes; quartz-crucible heater baskets
- **Typical Pack Unit:** Packs of 10, 25, or 50 boats

### Applications
- Thermal evaporation of Al, Ag, Au, Cu, Cr, Sn, In, LiF, MoO3, and MgF2
- Perovskite photovoltaic (PbI2, MAI, C60, BCP) and OLED organic/metal deposition
- Alumina-coated boats isolating molten metals that otherwise alloy with bare W/Mo
- Stranded W helical coils for flash/wire-wetting aluminum metallization

### Buyer Specification Guide
Specify metal (W, Mo, Ta, or Al2O3-coated W/Mo), boat geometry (spherical dimple, oblong canoe trough, baffled box, or stranded wire coil/basket), overall length × clamping tab width × sheet thickness, and evaporant material.

### Technical FAQs
- **Q: How do I choose between Tungsten (W), Molybdenum (Mo), and Tantalum (Ta) boats?**
  A: Tungsten handles the highest temperatures and resists most molten metals; Molybdenum is economical and ductile for moderate-temp metals and fluorides/oxides (like MoO3, Ag, Cu, MgF2); Tantalum stays ductile after heating (unlike W, which recrystallizes brittle) and is favored for baffled boxes, Cr, and corrosive/organic precursors.
- **Q: Why does sheet thickness (0.005" vs. 0.015") matter for my power supply?**
  A: Thicker boats (0.015"–0.020") last longer and hold larger charges but draw much higher current (e.g., 250–450 A) at low voltage; if your evaporator power supply is capped at 100–150 A, choose thinner 0.005"–0.010" boats or narrow necked profiles.
- **Q: When should I use an Al2O3-coated tungsten boat?**
  A: Use plasma-sprayed alumina-coated boats when evaporating metals like Ni, Fe, Al, or Pd that rapidly alloy with bare incandescent tungsten and burn the boat in half.

---
## QCM Thin-Film Deposition Monitor Crystals (`TB-PVD-QCM`)
- **URL:** https://tensilebase.com/products/qcm-rate-monitor-crystals/
- **Quote URL:** https://tensilebase.com/quote.html?product=qcm-rate-monitor-crystals
- **Category:** Thin Film Materials
- **Chemical Formula:** α-SiO2 + Au / Ag-Al Alloy Electrodes (Elements: Si, O, Au, Ag, Al)
- **CAS Registry Number:** 14808-60-7
- **Synonyms:** 6 MHz Inficon/Maxtek/Sycon compatible quartz rate monitor crystal, gold AT-cut piezoelectric thickness sensor, alloy-electrode dielectric PVD crystal
- **Purity / Grades:** AT-Cut Piezoelectric Quartz (6.0 MHz & 5.0 MHz Fundamental)
- **Typical Dimensions:** Ø 13.97 mm (0.550") Plano-Convex Standard Sensor Discs
- **Configurations:** 6 MHz or 5 MHz; Gold (Au) or High-Stress Alloy (Ag/Al) electrodes; RC-cut
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot Electrical/Frequency QC Certificate (resonant frequency range, motional resistance Ω, electrode adhesion).

### Technical Overview
Every PVD sputtering, e-beam, thermal, and ALD tool relies on AT-cut piezoelectric quartz monitor crystals to track sub-angstrom deposition rates and film thickness in real time. Precision contoured and lapped from inclusion-free cultured quartz and metallized with adherent Cr/Au or stress-tolerant Ag-Al alloy keyhole/full-pad electrodes, our Ø 14 mm (0.550") crystals fit standard Inficon, Maxtek, Colnatec, Sycon, Intellemetrics, and Ulvac sensor heads.

Supplied in dust-free 10-crystal cleanroom carousel/dispenser packs with 100% resonant-frequency and series-resistance lot testing.

### Nominal Properties
- **Resonant Frequencies:** 6.00 MHz (Inficon/Sycon standard) & 5.00 MHz (Maxtek/Ulvac standard)
- **Crystal Cut & Geometry:** AT-cut (or high-temp RC-cut), Ø 13.97 mm (0.550") plano-convex
- **Electrode Options:** Gold (Au over Cr/Ti adhesion) or Silver/Aluminum Alloy
- **Frequency Tolerance:** 5.980–5.995 MHz nominal start (100% tested for clean mode lock)
- **Packaging:** 10 crystals per cleanroom carousel pack (sold in boxes of 1, 5, or 10 packs)

### Applications
- Real-time thickness and Å/s rate control in e-beam, thermal, and sputter PVD
- Multi-crystal rotary sensor heads (6-crystal / 12-crystal changers) and single water-cooled heads
- High-stress dielectric & refractory metal runs using Alloy (Ag/Al) electrodes
- Research QCM gravimetric gas/vapor sensing (5 MHz & 6 MHz)

### Buyer Specification Guide
Confirm your thickness monitor brand/frequency (6.0 MHz vs. 5.0 MHz!), electrode metal (Gold for general metals/organics vs. Alloy for high-stress oxides like SiO2, Al2O3, MgF2, Ti, Cr, W), and number of 10-piece packs.

### Technical FAQs
- **Q: How do I know whether my chamber uses 6 MHz or 5 MHz QCM crystals?**
  A: Inficon (XTM/SQM/IC6), Sycon, and Leybold controllers almost universally use 6.0 MHz crystals, while older Maxtek, Phelps, and certain Ulvac heads use 5.0 MHz. Check your controller menu or spent crystal pack before ordering.
- **Q: When do Silver/Aluminum Alloy electrodes outperform Gold QCM crystals?**
  A: High-intrinsic-stress films (dielectric oxides like SiO2, Al2O3, TiO2, Ta2O5 and high-stress metals like Cr, Ni, Ti, Mo) can peel or mode-hop prematurely on soft gold; compliant Alloy electrodes extend crystal life significantly on stressed coatings.
- **Q: What is the minimum order for QCM crystals?**
  A: QCM crystals are supplied in sealed 10-piece cleanroom dispenser packs, commonly ordered in lots of 3, 5, 10, or 25 packs.

---
## Pure Tungsten Crucibles, Rods, Sheets & Furnace Hardware (`TB-W-CMP`)
- **URL:** https://tensilebase.com/products/tungsten-crucibles-rods-sheets/
- **Quote URL:** https://tensilebase.com/quote.html?product=tungsten-crucibles-rods-sheets
- **Category:** Refractory Metals
- **Chemical Formula:** W (Elements: W)
- **CAS Registry Number:** 7440-33-7
- **Synonyms:** 99.95% pure wolfram sapphire-growth crucible, ground tungsten electrode & push rod, vacuum furnace tungsten mesh/plate heater
- **Purity / Grades:** ≥99.95% W (3N5) & ≥99.99% W (4N); W-La2O3 / W-Re Alloys
- **Typical Dimensions:** Rods Ø 0.5–80 mm, Foil/Sheet 0.05–15 mm, Sintered/Forged Crucibles
- **Configurations:** Pressed-sintered or forged-machined crucibles, ground rods, stress-relieved plates
- **Typical Lead Time:** 10–18 business days
- **Documentation Included:** Manufacturer Mill Lot COA (W %, trace Fe/Mo/Ni/C/O/N in ppm, bulk density, hardness) and dimensional inspection report.

### Technical Overview
Boasting the highest melting point (3,422 °C) and lowest vapor pressure of all pure metals, tungsten is indispensable in vacuum/hydrogen/argon furnaces operating between 1,800 °C and 2,800 °C where molybdenum softens and graphite contaminates carbon-sensitive charges. Powder-metallurgy CIP-sintered and forged-machined tungsten crucibles contain molten sapphire (Al2O3 at 2,050+ °C), rare-earth metals, and refractory oxides without carbon vapor.

Available as thick-wall sintered/forged crucibles, spun thin-wall cups, centerless-ground rods, rolled stress-relieved foils and plates, twisted heating filaments, and lanthanated (WL10/WL20) machinable alloy forms.

### Nominal Properties
- **Tungsten Purity:** ≥99.95% W (ASTM B760 / B777 class; 99.99% 4N on request)
- **Melting Point:** 3,422 °C
- **Density:** 18.2–18.8 g/cm³ (sintered crucible) / 19.1–19.25 g/cm³ (forged/wrought)
- **Thermal Expansion (CTE):** 4.5 × 10⁻⁶ /K (matches borosilicate/aluminosilicate glass seals)
- **Max Vacuum/Inert Service:** 2,400–2,800 °C (oxidizes above ~400–500 °C in air)

### Applications
- Sapphire crystal growth, rare-earth smelting, and quartz melting crucibles
- Ultra-high-temperature (>2,000 °C) carbon-free vacuum furnace heaters, racks, and shields
- Ion-implantation source chamber hardware, collimators, and X-ray/radiation shielding
- High-stiffness EDM/probe pins, TIG/plasma electrodes, and glass-melting electrodes

### Buyer Specification Guide
Specify product form (sintered machined crucible, spun cup, rod, foil/sheet, or custom hot-zone print), dimensions and tolerances, wrought forged vs. CIP-sintered density requirement, surface finish (black as-rolled vs. alkaline-cleaned/ground bright), and operating atmosphere.

### Technical FAQs
- **Q: Should I choose a CIP-sintered or forged tungsten crucible?**
  A: CIP-sintered and CNC-turned crucibles (~18.3–18.6 g/cm³) are economical for larger wall thicknesses and general crystal/rare-earth melting, whereas forged/spun crucibles (≥19.0 g/cm³, refined grain) provide superior creep resistance and zero microporosity for repeated thermal cycles.
- **Q: Why is lanthanated tungsten (W + 1% La2O3) sometimes chosen over pure tungsten for furnace parts?**
  A: Finely dispersed La2O3 particles raise tungsten's recrystallization temperature, reduce high-temperature sag/embrittlement, and noticeably improve CNC machinability.
- **Q: Can tungsten hardware operate in nitrogen, hydrogen, or argon?**
  A: Yes—unlike titanium or tantalum (which embrittle in H2/N2), tungsten is compatible with ultra-pure hydrogen, argon, helium, nitrogen, and high vacuum.

---
## Molybdenum Sintering Boats, Plates, Rods & Heat Shields (`TB-MO-CMP`)
- **URL:** https://tensilebase.com/products/molybdenum-boats-plates-shields/
- **Quote URL:** https://tensilebase.com/quote.html?product=molybdenum-boats-plates-shields
- **Category:** Refractory Metals
- **Chemical Formula:** Mo (Elements: Mo)
- **CAS Registry Number:** 7439-98-7
- **Synonyms:** MIM & UO2/ceramic hydrogen-furnace molybdenum sintering tray, TZM hot-zone hearth & Tie rod, vacuum furnace Mo radiation shield pack, Mo hex bolt & nut
- **Purity / Grades:** ≥99.95% Pure Mo (ASTM B386/B387) & TZM / Mo-La Alloys
- **Typical Dimensions:** Folded/riveted boats, foils 0.025–0.5 mm, plates 1–30 mm, rods, fasteners
- **Configurations:** Pure Mo, High-Temp Mo-La (ML), Ti-Zr-Mo (TZM) creep-resistant alloy
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Mill Lot COA (ASTM B386/B387 chemical analysis, temper/hardness, thickness/dimensional check).

### Technical Overview
Molybdenum (melting point 2,623 °C, density 10.22 g/cm³—nearly half the weight and cost of tungsten) is the workhorse structural metal of carbon-free hydrogen and vacuum furnaces up to 1,700–1,900 °C. Folded, riveted, or deep-drawn molybdenum sintering boats carry MIM stainless/titanium parts, tungsten-carbide compacts, rare-earth magnets, and nuclear/technical ceramics through walking-beam and batch H2 furnaces.

Where pure Mo recrystallizes and creeps under heavy load above 1,150 °C, Ti-Zr-Mo (TZM) and oxide-dispersion lanthanated Mo (Mo-La) extend structural creep strength to 1,400–1,750 °C.

### Nominal Properties
- **Purity & Grades:** ≥99.95% Pure Mo; TZM (0.5% Ti, 0.08% Zr, 0.02% C); Mo-La (0.3–0.7% La2O3)
- **Melting Point & Density:** 2,623 °C; 10.22 g/cm³
- **Thermal Conductivity (RT):** ~138 W/m·K
- **Recrystallization Onset:** ~900–1,100 °C (Pure Mo) vs. ~1,350–1,550 °C (TZM / Mo-La)
- **Max Vacuum/H2 Service:** 1,650–1,900 °C (sublimes/oxidizes above ~450 °C in air)

### Applications
- Hydrogen & vacuum furnace sintering boats/trays for MIM, ceramics, and magnets
- Multi-layer reflective metallic vacuum-furnace heat shields, hearth rails, and Mo bolts/nuts
- Semiconductor ion-source components, sputtering backing plates, and X-ray anodes
- TZM isothermal forging dies, hot-runner nozzles, and brazing fixtures

### Buyer Specification Guide
Specify grade (Pure Mo up to 1,150 °C or low stress; Mo-La for anti-sag sintering boats and heaters up to 1,750 °C; TZM for high mechanical load), form (folded/riveted boat L×W×H×wall, sheet/plate, rod, crucible, or M4–M16 fasteners), surface finish (electrolytically/alkaline bright cleaned), and quantity.

### Technical FAQs
- **Q: Why do lanthanated molybdenum (Mo-La) sintering boats last much longer than pure Mo boats above 1,300 °C?**
  A: Pure molybdenum develops coarse equiaxed grains above 1,100 °C that turn room-temperature brittle and sag; doped La2O3 dispersoids form interlocking elongated fiber grains that stay ductile after cooling and resist bottom warping.
- **Q: Can molybdenum boats hold alumina or zirconia parts directly without reaction?**
  A: Yes—molybdenum is chemically compatible with dense Al2O3 and ZrO2 in high vacuum or dry hydrogen up to ~1,700–1,800 °C.
- **Q: Do you supply matching molybdenum hex bolts, nuts, washers, and threaded rods?**
  A: Yes—standard metric (M3–M16) and inch molybdenum and TZM fasteners, spacers, and rivets are available from stock/machining.

---
## Tantalum & Niobium Foils, Sheets, Rods & Crucibles (`TB-TA-NB`)
- **URL:** https://tensilebase.com/products/tantalum-niobium-foils-crucibles/
- **Quote URL:** https://tensilebase.com/quote.html?product=tantalum-niobium-foils-crucibles
- **Category:** Refractory Metals
- **Chemical Formula:** Ta / Nb (Elements: Ta, Nb)
- **CAS Registry Number:** 7440-25-7
- **Synonyms:** Corrosion-proof tantalum acid liner & thermowell, 4N vacuum-annealed tantalum getter/barrier foil, superconducting high-RRR niobium sheet, rare-earth melting Ta crucible
- **Purity / Grades:** ≥99.95% (3N5) & ≥99.99% (4N) Metallurgical & Capacitor/E-Beam Grades
- **Typical Dimensions:** Foils 0.01–0.5 mm, Plates 1–12 mm, Seamless Tubes, Rods, Deep-Drawn Crucibles
- **Configurations:** RO5200 / RO5400 pure Ta, Ta-2.5W / Ta-10W, Reactor-grade Nb (RO4200 / RRR >300)
- **Typical Lead Time:** 7–16 business days
- **Documentation Included:** Manufacturer Mill Lot COA (ASTM B708/B365/B393 ICP & interstitial C/O/N/H ppm assay, temper, dimensional check).

### Technical Overview
Unlike tungsten and molybdenum—which embrittle after high-temperature recrystallization—electron-beam melted tantalum (mp 3,017 °C) and niobium (mp 2,477 °C) remain extraordinarily ductile even at cryogenic temperatures and after high-vacuum thermal cycling. At chemical process temperatures (<150–200 °C), tantalum's passive Ta2O5 film rivals glass and PTFE against boiling HCl, H2SO4, HNO3, and bromine; in high vacuum (<10⁻⁵ Torr), tantalum crucibles and foils serve as non-carburizing barriers for rare-earth metals, actinide/lanthanide distillation, and SPS punch liners.

Supplied as bright cold-rolled vacuum-annealed foils (down to 10–25 µm), plates, rods, seamless tubes, and seamless deep-drawn or welded crucibles.

### Nominal Properties
- **Purity:** ≥99.95% (3N5) & ≥99.99% (4N); Nb low-Ta / high-RRR grades available
- **Melting Points:** 3,017 °C (Tantalum) / 2,477 °C (Niobium)
- **Densities:** 16.65 g/cm³ (Tantalum) / 8.57 g/cm³ (Niobium)
- **Foil Thickness Range:** 0.010 mm (10 µm), 0.025, 0.05, 0.10, 0.25, 0.50 mm
- **Required High-Temp Atmosphere:** High Vacuum (<10⁻⁵ Torr) or Ultra-Pure Argon ONLY (absorbs H2, N2, O2!)

### Applications
- Rare-earth metal melting/distillation crucibles and SPS/hot-press diffusion barrier foils
- Ultra-high-vacuum heaters, radiation shields, and oxygen/active-gas getter elements
- Hot mineral-acid heat-exchanger sleeves, thermowells, and autoclave patches (Ta)
- Superconducting RF / quantum device substrates and sputter/medical stock (Nb)

### Buyer Specification Guide
Specify Tantalum vs. Niobium (or Ta-2.5W / Ta-10W alloy), purity (3N5 vs. 4N), form (foil thickness × width × length, rod, tube, or seamless deep-drawn crucible OD × wall × height), annealed vs. hard-rolled temper, and operating environment.

### Technical FAQs
- **Q: Can tantalum or niobium be heated in hydrogen or nitrogen furnaces?**
  A: NO—above ~250–350 °C, both Ta and Nb aggressivelygetter hydrogen, nitrogen, oxygen, and water vapor, causing severe hydride/nitride embrittlement. Always run high-temperature Ta/Nb hardware in high vacuum (<10⁻⁵ Torr) or Ti-gettered 5N+ argon.
- **Q: Why do SPS researchers place 0.025–0.05 mm tantalum foil discs inside graphite dies?**
  A: Thin ductile tantalum foil placed between ceramic/metal sample powder and graphite punches blocks carbon inward diffusion during Spark Plasma Sintering up to 1,800+ °C.
- **Q: What chemicals attack tantalum?**
  A: Tantalum is inert to almost all acids (including aqua regia and boiling HCl/HNO3/H2SO4) below 150 °C, EXCEPT hydrofluoric acid (HF), fluoride ions, fuming SO3, and strong hot caustic alkalis.

---
## High-Purity & Grade 1/2 Titanium Foils, Plates & Mesh (`TB-TI-GR`)
- **URL:** https://tensilebase.com/products/titanium-foils-plates-mesh/
- **Quote URL:** https://tensilebase.com/quote.html?product=titanium-foils-plates-mesh
- **Category:** Refractory Metals
- **Chemical Formula:** Ti (Elements: Ti)
- **CAS Registry Number:** 7440-32-6
- **Synonyms:** ASTM B265 CP Grade 1 titanium foil, woven/expanded titanium anode mesh, IrO2/Ta2O5 MMO coated titanium electrode, 4N high-purity Ti research sheet
- **Purity / Grades:** Grade 1 / Grade 2 CP Ti, Grade 5 (Ti-6Al-4V), & 99.99% (4N) High-Purity Ti
- **Typical Dimensions:** Micron foils 0.01–0.5 mm, Plates 1–50 mm, Woven/Expanded Mesh, Rods, Fasteners
- **Configurations:** ASTM B265 Gr1/Gr2/Gr5, 4N Research Foil, MMO (IrO2-Ta2O5 / RuO2 / Pt) Coated Anodes
- **Typical Lead Time:** 5–12 business days
- **Documentation Included:** Manufacturer Mill Test Certificate / COA (ASTM B265 / B348 chemical & tensile report; 4N ICP trace metal COA for high-purity foil).

### Technical Overview
Produced in one of the world's deepest sponge-to-mill titanium supply chains, our titanium forms span precision 10 µm–500 µm cold-rolled foils for X-ray windows, TiO2 nanotube anodization, and battery tabs through heavy ASTM B265 plates, woven wire cloth (20–200 mesh), diamond expanded mesh, and CNC-turned non-magnetic fasteners.

For chlor-alkali, electrowinning, water treatment, and cathodic protection R&D, Grade 1 titanium mesh and plates can also be supplied pre-coated with Mixed Metal Oxide (IrO2-Ta2O5 or RuO2-IrO2) or platinum electrocatalyst layers.

### Nominal Properties
- **Available Grades:** CP Grade 1 (most ductile, ≥99.5%), CP Grade 2, Grade 5 (Ti-6Al-4V), & 99.99% (4N)
- **Density & Melting Point:** 4.51 g/cm³; 1,668 °C
- **Tensile Strength:** ≥240 MPa (Gr1), ≥345 MPa (Gr2), ≥895 MPa (Gr5)
- **Foil & Mesh Range:** Foils from 0.010 mm (10 µm); Woven 10–250 mesh; Expanded diamond mesh
- **Magnetic Permeability:** Paramagnetic (~1.00005, non-magnetic)

### Applications
- Electrochemical anode substrates, TiO2 nanotube synthesis (4N foil), and MMO/Pt insoluble anodes
- X-ray / electron-beam exit windows and lightweight high-vacuum non-magnetic hardware
- Seawater, chloride, wet-chlorine, and plating-bath corrosion-proof racks & heat transfer
- Battery current collectors and PEM water-electrolyzer bipolar flow plates

### Buyer Specification Guide
Specify grade (Grade 1 for deep forming/anodes, Grade 2 structural, Grade 5 high strength, or 4N 99.99% for research anodization), form (foil, plate, rod, woven mesh count × wire dia, or expanded mesh LWD×SWD×strand), dimensions, and any MMO/Pt catalyst coating.

### Technical FAQs
- **Q: Should I order Grade 1 CP Titanium or 99.99% (4N) Titanium foil for TiO2 nanotube anodization?**
  A: While CP Grade 1 (99.5%+ Ti) works for industrial trials, researchers growing ordered TiO2 nanotube arrays for photocatalysis or sensors strongly prefer annealed 99.99% (4N) foil (0.10–0.25 mm) to avoid Fe/O impurity pits.
- **Q: Why does bare titanium passivate and stop conducting if used directly as an oxygen-evolving anode?**
  A: Under anodic polarization in aqueous electrolytes, bare Ti forms a resistive TiO2 barrier layer within minutes; specify IrO2-Ta2O5 (oxygen evolution) or RuO2-IrO2 (chlorine evolution) MMO or Pt-coated Grade 1 titanium for active anodes.
- **Q: Are non-magnetic Grade 2 and Grade 5 titanium screws, nuts, and washers available?**
  A: Yes—metric and unified titanium socket cap screws, hex bolts, nuts, and washers can be bundled with sheet/mesh orders.

---
## Porous Nickel & Copper Metal Foam Current Collectors (`TB-BAT-FM`)
- **URL:** https://tensilebase.com/products/porous-nickel-copper-metal-foam/
- **Quote URL:** https://tensilebase.com/quote.html?product=porous-nickel-copper-metal-foam
- **Category:** Battery & Milling Labware
- **Chemical Formula:** Ni / Cu / Fe-Ni / Ni-Cr (Elements: Ni, Cu, Fe, Cr)
- **CAS Registry Number:** 7440-02-0
- **Synonyms:** 3D open-cell battery electrode nickel foam, lithium-metal anode host copper foam, alkaline HER/OER water electrolysis catalyst support, EMI/thermal metal sponge
- **Purity / Grades:** ≥99.8% Ni & ≥99.9% Cu Open-Cell 3D Reticulated Metal Foams
- **Typical Dimensions:** Thickness 0.3–10 mm; Sheets 100×100, 200×300 mm, Continuous Rolls, Punched Discs
- **Configurations:** 80–130 PPI pore size, 90%–98% open porosity, 250–1,000 g/m² areal density
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot COA (metal purity %, PPI pore count, porosity %, areal density g/m², thickness).

### Technical Overview
Three-dimensional reticulated nickel and copper foams provide an interconnected conductive skeleton with 95%–98% open void volume and massive electrochemically active surface area—suppressing lithium dendrite growth in 3D Li-metal anodes (Cu foam), supporting high-mass-loading supercapacitor and Ni-MH/Ni-Zn active pastes (Ni foam), and serving as low-overpotential alkaline water-splitting OER/HER catalyst substrates.

Supplied clean and oxide-controlled in resealable argon/vacuum pouches as precut R&D sheets (e.g., 100×100 mm, 200×250 mm), calendered thin battery rolls (0.3–2.0 mm), or Ø 12/14/15/16/19 mm coin-cell discs.

### Nominal Properties
- **Metal Purity:** ≥99.8% Nickel / ≥99.9% Copper
- **Open Porosity:** 93%–98% interconnected open-cell network
- **Pore Density (PPI):** 90–110 PPI standard battery/catalysis grade (20–130 PPI range)
- **Standard Thicknesses:** 0.5, 1.0, 1.5, 1.6, 2.0, 3.0, 5.0 mm (calendered to ±0.05–0.1 mm)
- **Areal Density:** 280–650 g/m² typical (customizable by thickness)

### Applications
- Alkaline water electrolyzer (AEM / KOH) OER & HER electrocatalyst 3D scaffolds (Ni & Fe-Ni foam)
- Dendrite-suppressing 3D lithium-metal & sodium-metal anode current collectors (Cu foam)
- High-rate supercapacitor, Ni-Zn, and hybrid battery electrode slurry hosts
- CVD 3D graphene network growth templates, phase-change thermal matrices, and acoustic/catalytic filters

### Buyer Specification Guide
Specify metal (Nickel, Copper, Fe-Ni, or high-temp Ni-Cr), thickness (mm), pore count (e.g., 110 PPI), areal density (g/m²) if critical, sheet dimensions or pre-punched coin-cell disc diameter, and sheet/pack count.

### Technical FAQs
- **Q: How do electrochemists pre-clean nickel or copper foam before catalyst deposition?**
  A: Researchers typically ultrasonicate Ni foam briefly in acetone/ethanol to remove trace handling oils, followed by a brief 1–3 M HCl (for Ni) or dilute acetic/citric acid (for Cu) dip to strip native surface oxide, then DI water rinse and N2 dry.
- **Q: Can foams be ordered pre-punched into 14 mm, 15 mm, or 16 mm CR2032 coin-cell discs?**
  A: Yes—burr-free die-punched discs (Ø 10 mm to Ø 20 mm) are available in packs of 100 or 500 discs to save lab punching time.
- **Q: Is copper foam shipped protected against air tarnishing?**
  A: Yes—copper foam sheets and discs are vacuum-packed in oxygen/moisture barrier bags immediately after final H2 reduction annealing.

---
## Sintered Titanium Fiber Felt & Porous Transport Layers (`TB-EC-TIF`)
- **URL:** https://tensilebase.com/products/sintered-titanium-fiber-felt/
- **Quote URL:** https://tensilebase.com/quote.html?product=sintered-titanium-fiber-felt
- **Category:** Battery & Milling Labware
- **Chemical Formula:** Ti (Optional Pt / IrO2 Coating) (Elements: Ti, Pt, Ir)
- **CAS Registry Number:** 7440-32-6
- **Synonyms:** PEMWE anode porous transport layer (PTL) / liquid-gas diffusion layer (LGDL), platinized titanium fiber felt, sintered porous titanium sparger plate
- **Purity / Grades:** ≥99.7% Vacuum-Sintered Pure Titanium Microfibers
- **Typical Dimensions:** Thickness 0.20, 0.25, 0.30, 0.40, 0.50, 0.80, 1.0 mm; Porosity 50%–78%
- **Configurations:** Uncoated bare Ti felt, Platinum-plated (0.2–1.0 µm Pt) PTL, Sintered porous Ti powder plates
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (Ti purity %, average thickness, bulk porosity %, Pt coating thickness/loading if coated).

### Technical Overview
In Proton Exchange Membrane Water Electrolyzers (PEMWE), the anode Porous Transport Layer (PTL / LGDL) operates at >1.8–2.2 V in acidic wet-oxygen environments that instantly dissolve carbon paper (Toray GDL) and stainless steel. Vacuum-sintered non-woven micron titanium fiber felt combines 55%–75% open porosity for simultaneous liquid-water feed and O2 bubble evacuation with smooth, non-puncturing membrane contact and high electrical/thermal conductivity.

Available bare or electroplated/PVD-coated with ultra-thin platinum (Pt) or IrO2 protective layers to eliminate TiO2 interfacial contact resistance over multi-thousand-hour stack tests, plus sintered Ti powder plates (0.5–5.0 mm).

### Nominal Properties
- **Titanium Purity:** ≥99.7% pure Ti microfibers (metallurgically diffusion-bonded)
- **Standard PTL Thicknesses:** 0.20, 0.25, 0.30, 0.35, 0.40, 0.50, 1.0 mm (±0.02 mm)
- **Controlled Porosity:** 50%–60%, 60%–70%, or 70%–78%
- **Equivalent Fiber / Pore Size:** 15–40 µm fiber web; graded fine-contact surface layer optional
- **Protective Coatings:** Uncoated or 0.1–1.0 µm uniform Pt / Au / IrO2 coating

### Applications
- PEM water electrolyzer (PEMWE) & unitized regenerative fuel cell (URFC) anode PTLs
- Electrochemical ozone generation, redox flow batteries, and acidic electrosynthesis
- Catalyst-coated substrate (CCS / PTE) direct IrO2/RuO2 anode supports
- High-pressure corrosive gas/liquid microfiltration & ozone sparging (sintered Ti plates)

### Buyer Specification Guide
Specify felt vs. sintered powder plate, exact thickness (e.g., 0.25 mm or 0.40 mm), target porosity % (e.g., 65%), uncoated vs. Pt-coated (specify single- or double-side Pt thickness in µm or mg/cm²), active cell area L×W (e.g., 5×5 cm, 10×10 cm, 20×30 cm), and sheet quantity.

### Technical FAQs
- **Q: Why do PEM electrolyzer researchers specify platinum-coated Ti felt over bare Ti felt?**
  A: Above ~1.6 V vs. RHE on the PEM oxygen anode, bare titanium slowly grows a semi-insulating TiO2 oxide skin that increases high-frequency ohmic cell resistance (HFR); a 0.2–0.5 µm Pt coating keeps interfacial contact resistance low and stable.
- **Q: How is titanium felt cut without crushing the edge pores or leaving sharp burrs that pierce Nafion membranes?**
  A: Sheets are laser-cut, wire-EDM cut, or precision die-sheared and roll-leveled flat so zero raised fiber burrs puncture thin PFSA proton-exchange membranes.
- **Q: What is the difference between sintered Ti fiber felt and sintered Ti powder plates?**
  A: Fiber felt (0.2–1.0 mm, 60%–75% porosity) is flexible, thin, and has much lower mass-transport resistance for high-current PEMWE cells, whereas sintered Ti powder plates (1.0–3.0 mm, ~30%–45% porosity) are rigid mechanical plates favored for high-differential-pressure spargers or rigid filter supports.

---
## Yttria-Stabilized Zirconia Grinding Media & Mill Jars (`TB-MIL-ZR`)
- **URL:** https://tensilebase.com/products/zirconia-grinding-media-mill-jars/
- **Quote URL:** https://tensilebase.com/quote.html?product=zirconia-grinding-media-mill-jars
- **Category:** Battery & Milling Labware
- **Chemical Formula:** ZrO2 · Y2O3 (95% 3Y-TZP) (Elements: Zr, Y, O)
- **CAS Registry Number:** 1314-23-4
- **Synonyms:** 95% YSZ planetary ball-mill jar & grinding balls, 0.3–10 mm zirconia bead-mill media, iron-free battery cathode & ceramic powder milling media
- **Purity / Grades:** 94.7%–95% ZrO2 + 5.2 wt% Y2O3 (3 mol% YSZ Ultra-Low-Wear Grade)
- **Typical Dimensions:** Beads/Balls Ø 0.1 mm to 30 mm; Planetary Jars 50 mL to 1,000 mL
- **Configurations:** Polished spherical YSZ media (kg packs); Solid YSZ or SS-jacketed planetary jars
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot COA (ZrO2/Y2O3 %, trace Fe2O3/SiO2/Al2O3 ppm, specific gravity, sphericity & HV hardness).

### Technical Overview
High-energy planetary ball milling and stirred bead milling of battery active materials (LFP, NMC, sulfide/oxide solid electrolytes), piezoelectric/structural ceramics, phosphors, and pharmaceuticals cannot tolerate ppm iron contamination from steel balls or rapid silica/alumina wear from cheaper media. Sintered 3 mol% yttria-stabilized zirconia (95% ZrO2, 6.0 g/cm³) delivers 65% higher kinetic impact energy than alumina at 10–30× lower ppm wear rates.

We supply both mirror-polished spherical grinding media (0.1 mm micro-beads through 20–30 mm balls) and matching O-ring-sealed planetary mill jars (50, 100, 250, 500, and 1,000 mL, including glovebox vacuum/inert gas valve lids), plus agate, tungsten carbide, alumina, and PTFE jars.

### Nominal Properties
- **Composition:** 94.7% ZrO2 (+HfO2) / 5.2% Y2O3 (true 3Y-TZP; zero ceria discoloration)
- **Specific Gravity / Density:** ≥6.00 g/cm³
- **Vickers Hardness & Toughness:** ≥1,250 HV10; ~9.0 MPa·m½ (crush & chip resistant)
- **Media Sizes Stocked:** 0.1, 0.3, 0.5, 1, 2, 3, 5, 8, 10, 15, 20, 25 mm diameters
- **Planetary Jar Volumes:** 50, 100, 250, 500, 1,000 mL (Viton, Silicone, or PTFE gaskets)

### Applications
- Zero-iron wet & dry mechanochemical synthesis of battery cathodes, Si anodes, and solid electrolytes
- Sub-micron & nano dispersion milling of electronic ceramics, MLCC BaTiO3, and pigments
- Planetary ball milling under argon inside gloveboxes (vacuum-valve lid jars)
- High-viscosity ink, slurry, and pharmaceutical attrition bead milling

### Buyer Specification Guide
For grinding media, specify ball diameter(s)—many labs combine e.g. 3 mm + 5 mm + 10 mm balls—and weight per size (500 g, 1 kg, 5 kg). For planetary jars, specify volume (mL), planetary mill brand/clamp height (Retsch, Fritsch, Across International, MSE/generic), solid ceramic vs. 304SS protective jacket, gasket elastomer, and whether vacuum/inert-gas purge valves are needed.

### Technical FAQs
- **Q: Why is yttria-stabilized zirconia (YSZ, 6.0 g/cm³) far superior to magnesia- or silicate-zirconia media?**
  A: Zirconium silicate (~4.0 g/cm³) and Mg-PSZ wear far faster and shed SiO2/MgO into your powder; true 95% YSZ (3Y-TZP, ≥6.0 g/cm³) has ultra-fine ~0.3 µm tetragonal grains with minimal wear and maximum impact kinetic energy.
- **Q: Can planetary zirconia jars be sealed inside an argon glovebox for sulfide solid-electrolyte milling?**
  A: Yes—specify stainless-steel-jacketed YSZ jars with dual needle/ball gas-purge valves and clamped Viton/PTFE O-ring lids engineered for air-sensitive mechanochemistry.
- **Q: Are Tungsten Carbide (WC-Co) and Agate planetary mill jars & balls also available?**
  A: Yes—cemented tungsten carbide (~14.8 g/cm³ for ultra-hard high-energy alloying), natural Brazilian agate, 99.5% alumina, silicon nitride, and PTFE jars/balls can all be quoted.

---
## PTFE & PPL Hydrothermal Synthesis Autoclave Reactors (`TB-LAB-HYD`)
- **URL:** https://tensilebase.com/products/ptfe-hydrothermal-autoclave-reactors/
- **Quote URL:** https://tensilebase.com/quote.html?product=ptfe-hydrothermal-autoclave-reactors
- **Category:** Battery & Milling Labware
- **Chemical Formula:** PTFE / PPL + 316L Stainless Steel (Elements: C, F, Fe, Cr, Ni)
- **CAS Registry Number:** 9002-84-0
- **Synonyms:** Teflon-lined stainless steel solvothermal digestion bomb, PPL high-temperature 280 °C hydrothermal reactor, MOF & zeolite synthesis autoclave
- **Purity / Grades:** Virgin Trace-Metal-Clean PTFE (≤220 °C) & PPL Para-Polyphenylene (≤260–280 °C)
- **Typical Dimensions:** 10, 25, 50, 100, 150, 200, 250, & 500 mL Chamber Volumes
- **Configurations:** Standard screw-cap + torque bar, Bolted flange safety-rupture-disc shell, Spare liners
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Vessel Inspection & Material Certificate (shell SS grade, hydro/thread QC check, Virgin PTFE/PPL liner spec, operating safety sheet).

### Technical Overview
Hydrothermal and solvothermal synthesis of metal-organic frameworks (MOFs), zeolites, TiO2/ZnO nanostructures, quantum dots, MXene/oxide hybrids, and ICP acid sample digestions require leak-free autogenous pressure containment up to 3 MPa inside an acid/alkali-inert polymer chamber. Each assembly pairs a precision CNC-machined non-magnetic 304/316L stainless-steel pressure vessel (with spring-loaded or flanged axial seal and safety overpressure relief) with a thick-wall virgin PTFE or dark para-polyphenylene (PPL) inner cup and lid.

Replacement PTFE and PPL inner cups are also stocked separately so a single steel shell fleet can rotate rapidly across multiple chemistries.

### Nominal Properties
- **Max Operating Temp:** 200–220 °C (Virgin PTFE liner) / 260–280 °C (PPL liner)
- **Max Working Pressure:** ≤3.0 MPa (30 bar; safety design 4–6 MPa)
- **Recommended Heating/Cooling:** ≤5 °C/min ramp rate; ≤65%–75% liquid fill factor (≤30%–50% for high-VP organics)
- **Shell Material:** CNC-turned 316L or 304 Austenitic Stainless Steel + tightening rod
- **Standard Capacities:** 25, 50, 100, 150, 200, 250, and 500 mL

### Applications
- Hydrothermal & solvothermal synthesis of nanomaterials, MOFs, COFs, and zeolites
- Single-crystal catalyst, battery cathode precursor, and perovskite growth
- Closed-vessel trace-metal HF / HNO3 / aqua regia mineral & geological acid digestion
- Higher-temperature solvothermal reactions (220–280 °C) using dark PPL liners

### Buyer Specification Guide
Specify nominal chamber capacity (mL), liner polymer (white Virgin PTFE for ≤200–220 °C vs. black/brown PPL for 220–280 °C), shell closure style (standard threaded screw-cap with torque rod vs. bolted flange with pressure gauge/rupture port), complete reactor count, and any extra spare liners.

### Technical FAQs
- **Q: When must I upgrade from a white PTFE liner to a PPL liner?**
  A: Virgin PTFE begins creeping and softening under pressure above 200–220 °C; if your synthesis protocol runs at 220–280 °C, choose a rigid cross-linked para-polyphenylene (PPL) liner, which resists creeping and retains acid/base inertness.
- **Q: What fill percentage is safe inside a closed hydrothermal autoclave?**
  A: Never exceed 70%–75% fill volume for aqueous solutions (and keep low-boiling organic solvents like ethanol/DMF/methanol to ≤30%–50% fill depending on temperature) so liquid thermal expansion never creates hydraulic overpressure.
- **Q: Can I order extra PTFE or PPL replacement liners without buying extra steel shells?**
  A: Yes—many laboratories order 2–3× spare PTFE/PPL liner cups per stainless shell so liners can soak in acid-cleaning baths without tying up oven capacity; note shell inner bore ID×height if matching third-party shells.

---
## Titanium (Ti) Sputtering Targets (`TB-PVD-TI`)
- **URL:** https://tensilebase.com/products/titanium-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=titanium-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Ti (Elements: Ti)
- **CAS Registry Number:** 7440-32-6
- **Synonyms:** High-purity titanium PVD magnetron target, 4N (99.99%) / 4N5 (99.995%) / 5N Ti planar sputter cathode disc, 4N5 Ti magnetron cathode disc, reactive TiN/TiO2 sputter target
- **Purity / Grades:** 4N (99.99%) / 4N5 (99.995%) / 5N
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Ti, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity titanium (Ti, CAS 7440-32-6) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Non-magnetic wrought titanium sputters smoothly in DC, pulsed-DC, RF, and HiPIMS modes across 3–12.7 mm thicknesses. Each titanium target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** Ti (CAS 7440-32-6)
- **Available Purity Tiers:** 4N (99.99%) / 4N5 (99.995%) / 5N
- **Theoretical / Bulk Density:** 4.51 g/cm³
- **Melting Point:** 1,668 °C
- **Thermal / Magnetic Note:** Paramagnetic; CTE 8.6 × 10⁻⁶ /K

### Applications
- Contact adhesion & barrier layers (Ti / TiN / TiW) in CMOS and MEMS wafer processing
- Reactive DC/pulsed-DC sputtering of optical & photocatalytic TiO2 thin films
- Hard wear-resistant TiN, TiCN, and TiAlN PVD tool coatings
- Biocompatible medical implant and sensor surface metallization

### Buyer Specification Guide
Specify titanium purity grade (4N (99.99%) / 4N5 (99.995%) / 5N), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of titanium (Ti) sputtering target should I select?**
  A: Standard 4N (99.99%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my titanium sputtering target be bonded to a copper backing plate?**
  A: Non-magnetic wrought titanium sputters smoothly in DC, pulsed-DC, RF, and HiPIMS modes across 3–12.7 mm thicknesses. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-TI?**
  A: Every titanium target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Chromium (Cr) Sputtering Targets (`TB-PVD-CR`)
- **URL:** https://tensilebase.com/products/chromium-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=chromium-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Cr (Elements: Cr)
- **CAS Registry Number:** 7440-47-3
- **Synonyms:** High-purity chromium PVD magnetron target, 3N5 (99.95%) / 4N (99.99%) / 4N5 Cr planar sputter cathode disc, HIP chromium PVD target, photomask Cr sputter disc
- **Purity / Grades:** 3N5 (99.95%) / 4N (99.99%) / 4N5
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Cr, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity chromium (Cr, CAS 7440-47-3) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

HIP-consolidated fine-grain chromium targets are recommended with metallic indium bonding to an OFHC copper backing plate for high-wattage runs. Each chromium target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** Cr (CAS 7440-47-3)
- **Available Purity Tiers:** 3N5 (99.95%) / 4N (99.99%) / 4N5
- **Theoretical / Bulk Density:** 7.19 g/cm³
- **Melting Point:** 1,907 °C
- **Thermal / Magnetic Note:** Antiferromagnetic (sputters as non-magnetic); CTE 4.9 × 10⁻⁶ /K

### Applications
- Photomask absorber layers (Cr / CrOx) and glass/quartz adhesion layers before Au or Cu
- Hard decorative and corrosion-resistant CrN / Cr2O3 PVD coatings
- Thin-film strain gauges and microelectronic lift-off stacks
- Optical black-chrome and beam-splitter mirror coatings

### Buyer Specification Guide
Specify chromium purity grade (3N5 (99.95%) / 4N (99.99%) / 4N5), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of chromium (Cr) sputtering target should I select?**
  A: Standard 3N5 (99.95%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my chromium sputtering target be bonded to a copper backing plate?**
  A: HIP-consolidated fine-grain chromium targets are recommended with metallic indium bonding to an OFHC copper backing plate for high-wattage runs. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-CR?**
  A: Every chromium target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Aluminum (Al) Sputtering Targets (`TB-PVD-AL`)
- **URL:** https://tensilebase.com/products/aluminum-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=aluminum-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Al (Elements: Al)
- **CAS Registry Number:** 7429-90-5
- **Synonyms:** High-purity aluminum PVD magnetron target, 4N (99.99%) / 5N (99.999%) / 5N5 Al planar sputter cathode disc, 5N aluminum sputter target, Al-0.5%Cu / Al-1%Si semiconductor target
- **Purity / Grades:** 4N (99.99%) / 5N (99.999%) / 5N5
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Al, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity aluminum (Al, CAS 7429-90-5) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

High-conductivity vacuum-melted aluminum can be clamped monolithically or bonded for high-rate interconnects and reactive nitride/oxide runs. Each aluminum target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** Al (CAS 7429-90-5)
- **Available Purity Tiers:** 4N (99.99%) / 5N (99.999%) / 5N5
- **Theoretical / Bulk Density:** 2.70 g/cm³
- **Melting Point:** 660 °C
- **Thermal / Magnetic Note:** Non-magnetic; High thermal conductivity 237 W/m·K

### Applications
- Semiconductor backend interconnects and bond-pad metallization (Al, Al-Si, Al-Cu)
- Reactive pulsed-DC / RF sputtering of piezoelectric AlN and dielectric Al2O3
- High-reflectivity UV/VIS/IR front-surface optical mirrors
- Display TFT gate/source busline metallization

### Buyer Specification Guide
Specify aluminum purity grade (4N (99.99%) / 5N (99.999%) / 5N5), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of aluminum (Al) sputtering target should I select?**
  A: Standard 4N (99.99%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my aluminum sputtering target be bonded to a copper backing plate?**
  A: High-conductivity vacuum-melted aluminum can be clamped monolithically or bonded for high-rate interconnects and reactive nitride/oxide runs. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-AL?**
  A: Every aluminum target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Copper (Cu) Sputtering Targets (`TB-PVD-CU`)
- **URL:** https://tensilebase.com/products/copper-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=copper-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Cu (Elements: Cu)
- **CAS Registry Number:** 7440-50-8
- **Synonyms:** High-purity copper PVD magnetron target, 4N5 (99.995%) / 5N (99.999%) / 6N OFHC Cu planar sputter cathode disc, OFHC 5N/6N copper PVD target, Cu seed layer sputter cathode
- **Purity / Grades:** 4N5 (99.995%) / 5N (99.999%) / 6N OFHC
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Cu, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity copper (Cu, CAS 7440-50-8) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Oxygen-free high-purity wrought copper targets support very high DC power densities monolithically without cracking. Each copper target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** Cu (CAS 7440-50-8)
- **Available Purity Tiers:** 4N5 (99.995%) / 5N (99.999%) / 6N OFHC
- **Theoretical / Bulk Density:** 8.96 g/cm³
- **Melting Point:** 1,085 °C
- **Thermal / Magnetic Note:** Diamagnetic; Ultra-high thermal conductivity 401 W/m·K

### Applications
- Damascene Cu seed layers, TSV plating seeds, and RF/microwave microstrip conductors
-  High-thermal-conductivity heat-sink metallization on AlN and SiC substrates
- Reactive Cu2O / CuO p-type oxide semiconductor thin films
- Antimicrobial and catalytic surface functional coatings

### Buyer Specification Guide
Specify copper purity grade (4N5 (99.995%) / 5N (99.999%) / 6N OFHC), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of copper (Cu) sputtering target should I select?**
  A: Standard 4N5 (99.995%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my copper sputtering target be bonded to a copper backing plate?**
  A: Oxygen-free high-purity wrought copper targets support very high DC power densities monolithically without cracking. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-CU?**
  A: Every copper target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Nickel (Ni) Sputtering Targets (`TB-PVD-NI`)
- **URL:** https://tensilebase.com/products/nickel-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=nickel-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Ni (Elements: Ni)
- **CAS Registry Number:** 7440-02-0
- **Synonyms:** High-purity nickel PVD magnetron target, 4N (99.99%) / 4N5 (99.995%) / 5N Ni planar sputter cathode disc, Thin ferromagnetic 4N5 Ni sputter target, Ni-7%V non-magnetic target
- **Purity / Grades:** 4N (99.99%) / 4N5 (99.995%) / 5N
- **Typical Dimensions:** Ø 1", 2", 3", 4" × 1.0–2.0 mm (thin magnetic pass-through) or 3–6 mm
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Ni, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity nickel (Ni, CAS 7440-02-0) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Ferromagnetic note: Standard magnetron cathodes require 1.0–2.0 mm thin Ni targets (or Ni-7wt%V non-magnetic alloy) so magnetic flux passes into the plasma. Each nickel target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** Ni (CAS 7440-02-0)
- **Available Purity Tiers:** 4N (99.99%) / 4N5 (99.995%) / 5N
- **Theoretical / Bulk Density:** 8.90 g/cm³
- **Melting Point:** 1,455 °C
- **Thermal / Magnetic Note:** Ferromagnetic (Curie temp 358 °C) — specify 1.0–2.0 mm thickness!

### Applications
- Solderable under-bump metallization (UBM) and NiSi silicide ohmic contacts on Si/SiC
- Spintronic, magnetoresistive, and magnetic recording thin-film multilayers
- Reactive NiO hole-transport layers for perovskite solar cells and electrochromics
- Alkaline electrocatalyst and micro-battery current-collector films

### Buyer Specification Guide
Specify nickel purity grade (4N (99.99%) / 4N5 (99.995%) / 5N), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of nickel (Ni) sputtering target should I select?**
  A: Standard 4N (99.99%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my nickel sputtering target be bonded to a copper backing plate?**
  A: Ferromagnetic note: Standard magnetron cathodes require 1.0–2.0 mm thin Ni targets (or Ni-7wt%V non-magnetic alloy) so magnetic flux passes into the plasma. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-NI?**
  A: Every nickel target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Tungsten (W) Sputtering Targets (`TB-PVD-W`)
- **URL:** https://tensilebase.com/products/tungsten-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=tungsten-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** W (Elements: W)
- **CAS Registry Number:** 7440-33-7
- **Synonyms:** High-purity tungsten PVD magnetron target, 3N5 (99.95%) / 4N (99.99%) / 5N W planar sputter cathode disc, 5N semiconductor tungsten PVD target, HIP wolfram sputter disc
- **Purity / Grades:** 3N5 (99.95%) / 4N (99.99%) / 5N
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for W, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity tungsten (W, CAS 7440-33-7) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Hot-isostatically pressed and forged tungsten targets achieve ≥99.5% density; metallic indium bonding to OFHC Cu is recommended for high power. Each tungsten target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** W (CAS 7440-33-7)
- **Available Purity Tiers:** 3N5 (99.95%) / 4N (99.99%) / 5N
- **Theoretical / Bulk Density:** 19.25 g/cm³
- **Melting Point:** 3,422 °C
- **Thermal / Magnetic Note:** Paramagnetic; Low CTE 4.5 × 10⁻⁶ /K; Low sputter yield distortion

### Applications
- Refractory gate electrodes, diffusion barriers (W / WN / WSi2), and MEMS heaters
- Reactive sputtering of electrochromic WO3 and 2D WS2/WSe2 precursors
- X-ray multilayer mirrors and high-Z radiation mask absorber coatings
- High-temperature wear and erosion-resistant PVD coatings

### Buyer Specification Guide
Specify tungsten purity grade (3N5 (99.95%) / 4N (99.99%) / 5N), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of tungsten (W) sputtering target should I select?**
  A: Standard 3N5 (99.95%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my tungsten sputtering target be bonded to a copper backing plate?**
  A: Hot-isostatically pressed and forged tungsten targets achieve ≥99.5% density; metallic indium bonding to OFHC Cu is recommended for high power. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-W?**
  A: Every tungsten target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Molybdenum (Mo) Sputtering Targets (`TB-PVD-MO`)
- **URL:** https://tensilebase.com/products/molybdenum-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=molybdenum-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Mo (Elements: Mo)
- **CAS Registry Number:** 7439-98-7
- **Synonyms:** High-purity molybdenum PVD magnetron target, 3N5 (99.95%) / 4N (99.99%) / 4N5 Mo planar sputter cathode disc, 4N molybdenum CIGS back-contact target, Mo PVD sputter disc
- **Purity / Grades:** 3N5 (99.95%) / 4N (99.99%) / 4N5
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Mo, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity molybdenum (Mo, CAS 7439-98-7) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Wrought fine-grain molybdenum targets sputter cleanly in DC and RF modes for ohmic back contacts and TFT metallization. Each molybdenum target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** Mo (CAS 7439-98-7)
- **Available Purity Tiers:** 3N5 (99.95%) / 4N (99.99%) / 4N5
- **Theoretical / Bulk Density:** 10.22 g/cm³
- **Melting Point:** 2,623 °C
- **Thermal / Magnetic Note:** Paramagnetic; Thermal conductivity 138 W/m·K

### Applications
- CIGS and CdTe thin-film photovoltaic back-contact electrodes
- Display TFT gate/source-drain wiring and MEMS structural electrodes
- Precursor Mo films for two-zone CVD sulfurization into 2D MoS2
- Reactive MoO3 hole-injection and work-function-tuning oxide layers

### Buyer Specification Guide
Specify molybdenum purity grade (3N5 (99.95%) / 4N (99.99%) / 4N5), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of molybdenum (Mo) sputtering target should I select?**
  A: Standard 3N5 (99.95%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my molybdenum sputtering target be bonded to a copper backing plate?**
  A: Wrought fine-grain molybdenum targets sputter cleanly in DC and RF modes for ohmic back contacts and TFT metallization. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-MO?**
  A: Every molybdenum target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Tantalum (Ta) Sputtering Targets (`TB-PVD-TA`)
- **URL:** https://tensilebase.com/products/tantalum-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=tantalum-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Ta (Elements: Ta)
- **CAS Registry Number:** 7440-25-7
- **Synonyms:** High-purity tantalum PVD magnetron target, 3N5 (99.95%) / 4N (99.99%) / 4N5 Ta planar sputter cathode disc, 4N5 tantalum Ta/TaN barrier sputter target, E-beam melted Ta cathode
- **Purity / Grades:** 3N5 (99.95%) / 4N (99.99%) / 4N5
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Ta, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity tantalum (Ta, CAS 7440-25-7) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Electron-beam melted fine-grain tantalum targets provide ultra-low interstitial oxygen and uniform grain texture for Cu barrier and optical coatings. Each tantalum target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** Ta (CAS 7440-25-7)
- **Available Purity Tiers:** 3N5 (99.95%) / 4N (99.99%) / 4N5
- **Theoretical / Bulk Density:** 16.65 g/cm³
- **Melting Point:** 3,017 °C
- **Thermal / Magnetic Note:** Paramagnetic; Ductile body-centered / beta-Ta thin films

### Applications
- Ta / TaN copper diffusion barrier liners in advanced semiconductor interconnects
- Reactive sputtering of low-loss high-index Ta2O5 optical mirror coatings
- Thin-film TaN precision resistors and thermal inkjet heater elements
- Superconducting alpha-Ta quantum resonator circuits and biocompatible coatings

### Buyer Specification Guide
Specify tantalum purity grade (3N5 (99.95%) / 4N (99.99%) / 4N5), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of tantalum (Ta) sputtering target should I select?**
  A: Standard 3N5 (99.95%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my tantalum sputtering target be bonded to a copper backing plate?**
  A: Electron-beam melted fine-grain tantalum targets provide ultra-low interstitial oxygen and uniform grain texture for Cu barrier and optical coatings. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-TA?**
  A: Every tantalum target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Niobium (Nb) Sputtering Targets (`TB-PVD-NB`)
- **URL:** https://tensilebase.com/products/niobium-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=niobium-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Nb (Elements: Nb)
- **CAS Registry Number:** 7440-03-1
- **Synonyms:** High-purity niobium PVD magnetron target, 3N5 (99.95%) / 4N (99.99%) / High-RRR 4N5 Nb planar sputter cathode disc, Superconducting 4N5 Nb sputter target, NbN SNSPD & qubit PVD target
- **Purity / Grades:** 3N5 (99.95%) / 4N (99.99%) / High-RRR 4N5
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Nb, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity niobium (Nb, CAS 7440-03-1) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

High-RRR electron-beam refined niobium targets minimize Ta, Fe, and O impurities critical for superconducting Josephson junctions and SNSPD detectors. Each niobium target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** Nb (CAS 7440-03-1)
- **Available Purity Tiers:** 3N5 (99.95%) / 4N (99.99%) / High-RRR 4N5
- **Theoretical / Bulk Density:** 8.57 g/cm³
- **Melting Point:** 2,477 °C
- **Thermal / Magnetic Note:** Superconducting Tc ~9.25 K (Nb) / ~16 K (NbN)

### Applications
- Superconducting quantum circuits (transmon qubits, Josephson junctions, Nb / NbN / NbTiN)
- Single-photon superconducting nanowire detectors (SNSPDs)
- Reactive sputtering of high-refractive-index Nb2O5 optical interference filters
- Corrosion-resistant and biocompatible capacitor/sensor electrodes

### Buyer Specification Guide
Specify niobium purity grade (3N5 (99.95%) / 4N (99.99%) / High-RRR 4N5), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of niobium (Nb) sputtering target should I select?**
  A: Standard 3N5 (99.95%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my niobium sputtering target be bonded to a copper backing plate?**
  A: High-RRR electron-beam refined niobium targets minimize Ta, Fe, and O impurities critical for superconducting Josephson junctions and SNSPD detectors. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-NB?**
  A: Every niobium target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Silicon (Si) Sputtering Targets (`TB-PVD-SI`)
- **URL:** https://tensilebase.com/products/silicon-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=silicon-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Si (Elements: Si)
- **CAS Registry Number:** 7440-21-3
- **Synonyms:** High-purity silicon PVD magnetron target, 5N (99.999%) / 6N Intrinsic, B-doped (p-type), or P-doped (n-type) Si planar sputter cathode disc, Boron-doped conductive p-type Si sputter target, 6N single-crystal Si RF target
- **Purity / Grades:** 5N (99.999%) / 6N Intrinsic, B-doped (p-type), or P-doped (n-type)
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Si, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity silicon (Si, CAS 7440-21-3) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Specify boron-doped conductive p-type silicon for DC / pulsed-DC reactive sputtering of SiO2 and Si3N4, or undoped intrinsic 6N monocrystalline/polycrystalline Si for RF sputtering. Each silicon target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** Si (CAS 7440-21-3)
- **Available Purity Tiers:** 5N (99.999%) / 6N Intrinsic, B-doped (p-type), or P-doped (n-type)
- **Theoretical / Bulk Density:** 2.33 g/cm³
- **Melting Point:** 1,414 °C
- **Thermal / Magnetic Note:** Semiconducting; p-type B-doped (<0.02–1 Ω·cm) enables DC/pulsed-DC sputtering!

### Applications
- Reactive DC/RF sputtering of low-loss SiO2, Si3N4, and SiOxNy optical & passivation films
- Amorphous silicon (a-Si:H) photovoltaics, bolometers, and TFT channels
- Silicon-carbon and silicon-alloy thin-film lithium-ion battery anodes
- Extreme-UV (EUV) Mo/Si multilayer reflective lithography optics

### Buyer Specification Guide
Specify silicon purity grade (5N (99.999%) / 6N Intrinsic, B-doped (p-type), or P-doped (n-type)), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of silicon (Si) sputtering target should I select?**
  A: Standard 5N (99.999%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my silicon sputtering target be bonded to a copper backing plate?**
  A: Specify boron-doped conductive p-type silicon for DC / pulsed-DC reactive sputtering of SiO2 and Si3N4, or undoped intrinsic 6N monocrystalline/polycrystalline Si for RF sputtering. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-SI?**
  A: Every silicon target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Germanium (Ge) Sputtering Targets (`TB-PVD-GE`)
- **URL:** https://tensilebase.com/products/germanium-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=germanium-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Ge (Elements: Ge)
- **CAS Registry Number:** 7440-56-4
- **Synonyms:** High-purity germanium PVD magnetron target, 5N (99.999%) / 6N (99.9999%) Intrinsic or Ga/Sb-Doped Ge planar sputter cathode disc, 6N zone-refined germanium IR optical sputter target, indium-bonded Ge disc
- **Purity / Grades:** 5N (99.999%) / 6N (99.9999%) Intrinsic or Ga/Sb-Doped
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Ge, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity germanium (Ge, CAS 7440-56-4) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Brittle zone-refined germanium targets should be indium-bonded to an OFHC copper backing plate to prevent thermal cleavage during RF or DC runs. Each germanium target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** Ge (CAS 7440-56-4)
- **Available Purity Tiers:** 5N (99.999%) / 6N (99.9999%) Intrinsic or Ga/Sb-Doped
- **Theoretical / Bulk Density:** 5.32 g/cm³
- **Melting Point:** 938 °C
- **Thermal / Magnetic Note:** Semiconducting; High IR refractive index n ~ 4.0 (2–14 µm)

### Applications
- Mid-IR and long-wave IR (2–14 µm FLIR) high-index optical interference filters
- SiGe photodetectors, high-mobility CMOS channels, and thermophotovoltaics
- Chalcogenide phase-change memory (GeSbTe / GST) co-sputtering
- AuGeNi ohmic contact metallization on GaAs III-V wafers

### Buyer Specification Guide
Specify germanium purity grade (5N (99.999%) / 6N (99.9999%) Intrinsic or Ga/Sb-Doped), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of germanium (Ge) sputtering target should I select?**
  A: Standard 5N (99.999%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my germanium sputtering target be bonded to a copper backing plate?**
  A: Brittle zone-refined germanium targets should be indium-bonded to an OFHC copper backing plate to prevent thermal cleavage during RF or DC runs. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-GE?**
  A: Every germanium target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Vanadium (V) Sputtering Targets (`TB-PVD-V`)
- **URL:** https://tensilebase.com/products/vanadium-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=vanadium-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** V (Elements: V)
- **CAS Registry Number:** 7440-62-2
- **Synonyms:** High-purity vanadium PVD magnetron target, 3N5 (99.95%) / 4N (99.99%) V planar sputter cathode disc, 4N vanadium PVD target, VO2 / VOx microbolometer reactive sputter target
- **Purity / Grades:** 3N5 (99.95%) / 4N (99.99%)
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for V, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity vanadium (V, CAS 7440-62-2) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Vacuum electron-beam melted ductile vanadium targets support both metallic barrier deposition and reactive pulsed-DC/RF oxide sputtering. Each vanadium target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** V (CAS 7440-62-2)
- **Available Purity Tiers:** 3N5 (99.95%) / 4N (99.99%)
- **Theoretical / Bulk Density:** 6.11 g/cm³
- **Melting Point:** 1,910 °C
- **Thermal / Magnetic Note:** Paramagnetic; Precursor for thermochromic VO2 (Tc ~68 °C)

### Applications
- Thermochromic VO2 smart-window and uncooled IR microbolometer VOx sensor films
- Hard wear-resistant VN and TiAlVN PVD tribological coatings
- Hydrogen-permeable membranes and vanadium thin-film battery cathodes (V2O5)
- High-temperature diffusion barrier and adhesion layers

### Buyer Specification Guide
Specify vanadium purity grade (3N5 (99.95%) / 4N (99.99%)), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of vanadium (V) sputtering target should I select?**
  A: Standard 3N5 (99.95%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my vanadium sputtering target be bonded to a copper backing plate?**
  A: Vacuum electron-beam melted ductile vanadium targets support both metallic barrier deposition and reactive pulsed-DC/RF oxide sputtering. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-V?**
  A: Every vanadium target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Zirconium (Zr) Sputtering Targets (`TB-PVD-ZR`)
- **URL:** https://tensilebase.com/products/zirconium-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=zirconium-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Zr (Elements: Zr)
- **CAS Registry Number:** 7440-67-7
- **Synonyms:** High-purity zirconium PVD magnetron target, 3N5 (99.95% Grade 702) / 4N Low-Hf (<100 ppm Hf) Zr planar sputter cathode disc, Low-Hf 4N zirconium sputter target, ZrN / ZrO2 reactive PVD target
- **Purity / Grades:** 3N5 (99.95% Grade 702) / 4N Low-Hf (<100 ppm Hf)
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Zr, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity zirconium (Zr, CAS 7440-67-7) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Available in standard crystal-bar/sponge 3N5 purity as well as nuclear/semiconductor low-hafnium (<50–100 ppm Hf) 4N grades. Each zirconium target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** Zr (CAS 7440-67-7)
- **Available Purity Tiers:** 3N5 (99.95% Grade 702) / 4N Low-Hf (<100 ppm Hf)
- **Theoretical / Bulk Density:** 6.51 g/cm³
- **Melting Point:** 1,855 °C
- **Thermal / Magnetic Note:** Paramagnetic; Low thermal neutron capture & high getter activity

### Applications
- Reactive sputtering of high-k ZrO2, YSZ, and golden-hard ZrN coatings
- Non-evaporable getter (NEG) Ti-Zr-V UHV thin-film chamber coatings
- Metallic glass (Zr-Cu-Al) thin films and corrosion barrier layers
- Optical protective overcoats and EUV spectral purity filters

### Buyer Specification Guide
Specify zirconium purity grade (3N5 (99.95% Grade 702) / 4N Low-Hf (<100 ppm Hf)), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of zirconium (Zr) sputtering target should I select?**
  A: Standard 3N5 (99.95% Grade 702) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my zirconium sputtering target be bonded to a copper backing plate?**
  A: Available in standard crystal-bar/sponge 3N5 purity as well as nuclear/semiconductor low-hafnium (<50–100 ppm Hf) 4N grades. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-ZR?**
  A: Every zirconium target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Hafnium (Hf) Sputtering Targets (`TB-PVD-HF`)
- **URL:** https://tensilebase.com/products/hafnium-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=hafnium-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Hf (Elements: Hf)
- **CAS Registry Number:** 7440-58-6
- **Synonyms:** High-purity hafnium PVD magnetron target, 3N5 (99.95% excl. Zr) / 4N Low-Zr Hf planar sputter cathode disc, Crystal-bar 4N hafnium PVD target, ferroelectric HZO / high-k HfO2 sputter target
- **Purity / Grades:** 3N5 (99.95% excl. Zr) / 4N Low-Zr
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Hf, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity hafnium (Hf, CAS 7440-58-6) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Refined crystal-bar hafnium targets enable contaminate-free reactive sputtering of high-k gate dielectrics and high-LIDT UV laser mirror layers. Each hafnium target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** Hf (CAS 7440-58-6)
- **Available Purity Tiers:** 3N5 (99.95% excl. Zr) / 4N Low-Zr
- **Theoretical / Bulk Density:** 13.31 g/cm³
- **Melting Point:** 2,233 °C
- **Thermal / Magnetic Note:** Paramagnetic; High-k HfO2 & refractory HfN/HfC precursor

### Applications
- CMOS high-k gate dielectric HfO2, HfSiON, and ferroelectric Hf0.5Zr0.5O2 (HZO) films
- High-laser-induced-damage-threshold (LIDT) UV/NIR optical coatings
- Ultra-refractory HfN and HfC diffusion barriers and plasmonic absorbers
- Aerospace thermal barrier sensor coatings

### Buyer Specification Guide
Specify hafnium purity grade (3N5 (99.95% excl. Zr) / 4N Low-Zr), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of hafnium (Hf) sputtering target should I select?**
  A: Standard 3N5 (99.95% excl. Zr) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my hafnium sputtering target be bonded to a copper backing plate?**
  A: Refined crystal-bar hafnium targets enable contaminate-free reactive sputtering of high-k gate dielectrics and high-LIDT UV laser mirror layers. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-HF?**
  A: Every hafnium target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Cobalt (Co) Sputtering Targets (`TB-PVD-CO`)
- **URL:** https://tensilebase.com/products/cobalt-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=cobalt-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Co (Elements: Co)
- **CAS Registry Number:** 7440-48-4
- **Synonyms:** High-purity cobalt PVD magnetron target, 3N5 (99.95%) / 4N (99.99%) / 4N5 Co planar sputter cathode disc, Thin ferromagnetic 4N5 Co magnetron target, CoSi2 & spintronic PVD target
- **Purity / Grades:** 3N5 (99.95%) / 4N (99.99%) / 4N5
- **Typical Dimensions:** Ø 1", 2", 3", 4" × 1.0–2.0 mm (thin magnetic pass-through) or 3–6 mm
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Co, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity cobalt (Co, CAS 7440-48-4) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Ferromagnetic note: Because cobalt has strong magnetic saturation, specify thin 0.5–2.0 mm discs (or Co-alloy targets) for standard magnetron cathodes. Each cobalt target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** Co (CAS 7440-48-4)
- **Available Purity Tiers:** 3N5 (99.95%) / 4N (99.99%) / 4N5
- **Theoretical / Bulk Density:** 8.90 g/cm³
- **Melting Point:** 1,495 °C
- **Thermal / Magnetic Note:** Ferromagnetic (Curie temp 1,115 °C) — specify 0.5–2.0 mm thickness!

### Applications
- Low-resistivity CoSi2 salicide contacts and advanced interconnect liner/cap layers
- Giant magnetoresistance (GMR), magnetic tunnel junction (MTJ CoFeB), and perpendicular recording media
- Reactive Co3O4 / LiCoO2 thin-film micro-battery cathode & electrocatalyst layers
- X-ray and magnetic sensor thin-film stacks

### Buyer Specification Guide
Specify cobalt purity grade (3N5 (99.95%) / 4N (99.99%) / 4N5), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of cobalt (Co) sputtering target should I select?**
  A: Standard 3N5 (99.95%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my cobalt sputtering target be bonded to a copper backing plate?**
  A: Ferromagnetic note: Because cobalt has strong magnetic saturation, specify thin 0.5–2.0 mm discs (or Co-alloy targets) for standard magnetron cathodes. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-CO?**
  A: Every cobalt target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Iron (Fe) Sputtering Targets (`TB-PVD-FE`)
- **URL:** https://tensilebase.com/products/iron-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=iron-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Fe (Elements: Fe)
- **CAS Registry Number:** 7439-89-6
- **Synonyms:** High-purity iron PVD magnetron target, 3N5 (99.95%) / 4N (99.99%) / 4N5 Fe planar sputter cathode disc, 4N5 pure iron thin magnetic sputter target, Fe spintronic & CNT catalyst target
- **Purity / Grades:** 3N5 (99.95%) / 4N (99.99%) / 4N5
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Fe, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity iron (Fe, CAS 7439-89-6) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Vacuum-induction melted and high-purity electrolytic iron targets are precision ground to 0.5–2.0 mm thickness for reliable magnetron plasma ignition. Each iron target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** Fe (CAS 7439-89-6)
- **Available Purity Tiers:** 3N5 (99.95%) / 4N (99.99%) / 4N5
- **Theoretical / Bulk Density:** 7.87 g/cm³
- **Melting Point:** 1,538 °C
- **Thermal / Magnetic Note:** Ferromagnetic (Curie temp 770 °C) — specify 0.5–1.5 mm thickness!

### Applications
- Spintronic spin-valves, FePt / FePd L10 magnetic media, and magneto-optical films
- Carbon nanotube (CNT) CVD catalyst thin-film seed layers
- Reactive Fe2O3 / Fe3O4 photoelectrochemical water-splitting photoanodes
- Soft magnetic thin-film inductor cores

### Buyer Specification Guide
Specify iron purity grade (3N5 (99.95%) / 4N (99.99%) / 4N5), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of iron (Fe) sputtering target should I select?**
  A: Standard 3N5 (99.95%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my iron sputtering target be bonded to a copper backing plate?**
  A: Vacuum-induction melted and high-purity electrolytic iron targets are precision ground to 0.5–2.0 mm thickness for reliable magnetron plasma ignition. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-FE?**
  A: Every iron target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Manganese (Mn) Sputtering Targets (`TB-PVD-MN`)
- **URL:** https://tensilebase.com/products/manganese-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=manganese-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Mn (Elements: Mn)
- **CAS Registry Number:** 7439-96-5
- **Synonyms:** High-purity manganese PVD magnetron target, 3N5 (99.95%) / 4N (99.99%) Mn planar sputter cathode disc, Hot-pressed 4N manganese indium-bonded sputter target, CuMn / IrMn PVD target
- **Purity / Grades:** 3N5 (99.95%) / 4N (99.99%)
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Mn, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity manganese (Mn, CAS 7439-96-5) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Pure alpha-manganese is naturally hard and brittle at room temperature, so targets are hot-pressed/sintered and metallic-indium bonded to OFHC copper backing plates. Each manganese target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** Mn (CAS 7439-96-5)
- **Available Purity Tiers:** 3N5 (99.95%) / 4N (99.99%)
- **Theoretical / Bulk Density:** 7.21 g/cm³
- **Melting Point:** 1,246 °C
- **Thermal / Magnetic Note:** Antiferromagnetic below 100 K; Brittle alpha-Mn (Indium bond required!)

### Applications
- Antiferromagnetic pinning alloys (IrMn, PtMn, FeMn) in MTJ/GMR magnetic sensors
- Self-forming Cu-Mn barrier/seed layers for sub-10 nm semiconductor Cu interconnects
- Reactive MnO2 / LiMn2O4 thin-film supercapacitor and battery electrodes
- Diluted magnetic semiconductor dopants

### Buyer Specification Guide
Specify manganese purity grade (3N5 (99.95%) / 4N (99.99%)), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of manganese (Mn) sputtering target should I select?**
  A: Standard 3N5 (99.95%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my manganese sputtering target be bonded to a copper backing plate?**
  A: Pure alpha-manganese is naturally hard and brittle at room temperature, so targets are hot-pressed/sintered and metallic-indium bonded to OFHC copper backing plates. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-MN?**
  A: Every manganese target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Zinc (Zn) Sputtering Targets (`TB-PVD-ZN`)
- **URL:** https://tensilebase.com/products/zinc-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=zinc-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Zn (Elements: Zn)
- **CAS Registry Number:** 7440-66-6
- **Synonyms:** High-purity zinc PVD magnetron target, 4N (99.99%) / 4N5 (99.995%) / 5N Zn planar sputter cathode disc, 5N zinc reactive ZnO sputter target, Low-E glass Zn PVD cathode
- **Purity / Grades:** 4N (99.99%) / 4N5 (99.995%) / 5N
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Zn, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity zinc (Zn, CAS 7440-66-6) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

High-purity 4N5–5N cast and rolled zinc targets enable high-rate reactive DC/pulsed-DC sputtering of ZnO and Low-E architectural glass coatings. Each zinc target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** Zn (CAS 7440-66-6)
- **Available Purity Tiers:** 4N (99.99%) / 4N5 (99.995%) / 5N
- **Theoretical / Bulk Density:** 7.14 g/cm³
- **Melting Point:** 419.5 °C
- **Thermal / Magnetic Note:** Diamagnetic; Low melting point 419.5 °C (use good water cooling)

### Applications
- High-rate reactive sputtering of piezoelectric, optical, and TCO ZnO / AZO thin films
- Low-emissivity (Low-E) architectural glass Ag/ZnO dielectric stacks
- CZTS (Cu2ZnSnS4) kesterite earth-abundant solar cell precursor layers
- Sacrificial and galvanic corrosion-protection thin films

### Buyer Specification Guide
Specify zinc purity grade (4N (99.99%) / 4N5 (99.995%) / 5N), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of zinc (Zn) sputtering target should I select?**
  A: Standard 4N (99.99%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my zinc sputtering target be bonded to a copper backing plate?**
  A: High-purity 4N5–5N cast and rolled zinc targets enable high-rate reactive DC/pulsed-DC sputtering of ZnO and Low-E architectural glass coatings. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-ZN?**
  A: Every zinc target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Tin (Sn) Sputtering Targets (`TB-PVD-SN`)
- **URL:** https://tensilebase.com/products/tin-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=tin-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Sn (Elements: Sn)
- **CAS Registry Number:** 7440-31-5
- **Synonyms:** High-purity tin PVD magnetron target, 4N (99.99%) / 4N5 / 5N (99.999%) Sn planar sputter cathode disc, 5N tin reactive SnO2 sputter target, solder-bump Sn PVD target
- **Purity / Grades:** 4N (99.99%) / 4N5 / 5N (99.999%)
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Sn, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity tin (Sn, CAS 7440-31-5) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Because pure beta-tin melts at 231.9 °C, bonding to a water-cooled OFHC copper backing plate and limiting power density keeps the target surface solid. Each tin target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** Sn (CAS 7440-31-5)
- **Available Purity Tiers:** 4N (99.99%) / 4N5 / 5N (99.999%)
- **Theoretical / Bulk Density:** 7.29 g/cm³
- **Melting Point:** 231.9 °C
- **Thermal / Magnetic Note:** Low melting point 231.9 °C — indium-bond to Cu & use moderate power!

### Applications
- Reactive sputtering of SnO2 / FTO gas-sensing and perovskite solar electron-transport layers
- Wafer-level solder bumping (Sn, AuSn, CuSn, SnAg) for flip-chip packaging
- High-capacity Sn and Sn-alloy thin-film lithium-ion anode research
- Low-E glass and decorative reflective coatings

### Buyer Specification Guide
Specify tin purity grade (4N (99.99%) / 4N5 / 5N (99.999%)), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of tin (Sn) sputtering target should I select?**
  A: Standard 4N (99.99%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my tin sputtering target be bonded to a copper backing plate?**
  A: Because pure beta-tin melts at 231.9 °C, bonding to a water-cooled OFHC copper backing plate and limiting power density keeps the target surface solid. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-SN?**
  A: Every tin target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Indium (In) Sputtering Targets (`TB-PVD-IN`)
- **URL:** https://tensilebase.com/products/indium-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=indium-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** In (Elements: In)
- **CAS Registry Number:** 7440-74-6
- **Synonyms:** High-purity indium PVD magnetron target, 4N5 (99.995%) / 5N (99.999%) / 6N In planar sputter cathode disc, 5N indium flip-chip bump sputter target, Cu-backed In PVD cathode
- **Purity / Grades:** 4N5 (99.995%) / 5N (99.999%) / 6N
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for In, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity indium (In, CAS 7440-74-6) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

With a 156.6 °C melting point, pure indium targets are cast/bonded directly onto a chilled OFHC copper backing plate or recessed cup for low-power PVD. Each indium target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** In (CAS 7440-74-6)
- **Available Purity Tiers:** 4N5 (99.995%) / 5N (99.999%) / 6N
- **Theoretical / Bulk Density:** 7.31 g/cm³
- **Melting Point:** 156.6 °C
- **Thermal / Magnetic Note:** Ultra-soft & low MP 156.6 °C — bonded directly into recessed Cu backing cup!

### Applications
- Cold-welding indium flip-chip bump interconnects for IR focal-plane arrays and quantum chips
- CIGS / CuInSe2 photovoltaic absorber precursor co-sputtering
- Reactive In2O3 / ITO transparent conductive oxide thin films
- Cryogenic UHV hermetic seal and thermal interface coatings

### Buyer Specification Guide
Specify indium purity grade (4N5 (99.995%) / 5N (99.999%) / 6N), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of indium (In) sputtering target should I select?**
  A: Standard 4N5 (99.995%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my indium sputtering target be bonded to a copper backing plate?**
  A: With a 156.6 °C melting point, pure indium targets are cast/bonded directly onto a chilled OFHC copper backing plate or recessed cup for low-power PVD. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-IN?**
  A: Every indium target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Bismuth (Bi) Sputtering Targets (`TB-PVD-BI`)
- **URL:** https://tensilebase.com/products/bismuth-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=bismuth-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Bi (Elements: Bi)
- **CAS Registry Number:** 7440-69-9
- **Synonyms:** High-purity bismuth PVD magnetron target, 4N (99.99%) / 4N5 / 5N (99.999%) Bi planar sputter cathode disc, 5N bismuth topological insulator & thermoelectric Bi2Te3 PVD target
- **Purity / Grades:** 4N (99.99%) / 4N5 / 5N (99.999%)
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Bi, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity bismuth (Bi, CAS 7440-69-9) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Fine-grain vacuum-cast/pressed bismuth targets are metallic-indium bonded to OFHC copper backing plates to prevent cracking and local overheating. Each bismuth target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** Bi (CAS 7440-69-9)
- **Available Purity Tiers:** 4N (99.99%) / 4N5 / 5N (99.999%)
- **Theoretical / Bulk Density:** 9.78 g/cm³
- **Melting Point:** 271.4 °C
- **Thermal / Magnetic Note:** Strongly diamagnetic; Brittle & low MP 271.4 °C (Indium bond required)

### Applications
- Topological insulator (Bi2Se3, Bi2Te3, BiSb) and spin-orbit torque (SOT) spintronic thin films
- Peltier thermoelectric thin-film micro-coolers and Seebeck energy harvesters
- Photocatalytic BiVO4 and ferroelectric BiFeO3 (BFO) reactive/co-sputtered oxides
- Lead-free solder and low-melting fusible sensor links

### Buyer Specification Guide
Specify bismuth purity grade (4N (99.99%) / 4N5 / 5N (99.999%)), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of bismuth (Bi) sputtering target should I select?**
  A: Standard 4N (99.99%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my bismuth sputtering target be bonded to a copper backing plate?**
  A: Fine-grain vacuum-cast/pressed bismuth targets are metallic-indium bonded to OFHC copper backing plates to prevent cracking and local overheating. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-BI?**
  A: Every bismuth target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Antimony (Sb) Sputtering Targets (`TB-PVD-SB`)
- **URL:** https://tensilebase.com/products/antimony-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=antimony-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Sb (Elements: Sb)
- **CAS Registry Number:** 7440-36-0
- **Synonyms:** High-purity antimony PVD magnetron target, 4N (99.99%) / 4N5 / 5N (99.999%) Sb planar sputter cathode disc, 5N antimony phase-change & Sb2Se3 solar sputter target, Cu-backed Sb disc
- **Purity / Grades:** 4N (99.99%) / 4N5 / 5N (99.999%)
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Sb, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity antimony (Sb, CAS 7440-36-0) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Hot-pressed high-density antimony targets are supplied indium-bonded to OFHC copper backing plates for phase-change, thermoelectric, and solar co-sputtering. Each antimony target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** Sb (CAS 7440-36-0)
- **Available Purity Tiers:** 4N (99.99%) / 4N5 / 5N (99.999%)
- **Theoretical / Bulk Density:** 6.69 g/cm³
- **Melting Point:** 630.6 °C
- **Thermal / Magnetic Note:** Semimetal; Brittle rhombohedral structure (Indium bond required)

### Applications
- Phase-change memory (PCM) and rewritable optical media (GeSbTe, AgInSbTe)
- Antimony chalcogenide (Sb2Se3, Sb2S3) thin-film solar cell absorbers
- Thermoelectric Bi-Sb-Te and skutterudite CoSb3 thin films
- N-type semiconductor dopant and III-V antimonide research

### Buyer Specification Guide
Specify antimony purity grade (4N (99.99%) / 4N5 / 5N (99.999%)), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of antimony (Sb) sputtering target should I select?**
  A: Standard 4N (99.99%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my antimony sputtering target be bonded to a copper backing plate?**
  A: Hot-pressed high-density antimony targets are supplied indium-bonded to OFHC copper backing plates for phase-change, thermoelectric, and solar co-sputtering. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-SB?**
  A: Every antimony target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Tellurium (Te) Sputtering Targets (`TB-PVD-TE`)
- **URL:** https://tensilebase.com/products/tellurium-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=tellurium-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Te (Elements: Te)
- **CAS Registry Number:** 13494-80-9
- **Synonyms:** High-purity tellurium PVD magnetron target, 4N (99.99%) / 4N5 / 5N (99.999%) Te planar sputter cathode disc, 5N tellurium chalcogenide PVD target, indium-bonded Te sputter disc
- **Purity / Grades:** 4N (99.99%) / 4N5 / 5N (99.999%)
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Te, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity tellurium (Te, CAS 13494-80-9) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

High-density sintered tellurium targets are indium-bonded to water-cooled OFHC copper backing plates for low-power RF/DC chalcogenide co-sputtering. Each tellurium target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** Te (CAS 13494-80-9)
- **Available Purity Tiers:** 4N (99.99%) / 4N5 / 5N (99.999%)
- **Theoretical / Bulk Density:** 6.24 g/cm³
- **Melting Point:** 449.5 °C
- **Thermal / Magnetic Note:** Chalcogen semimetal; Brittle & high vapor pressure (Indium bond required)

### Applications
- 2D transition-metal ditelluride (MoTe2, WTe2) and topological Bi2Te3 synthesis
- CdTe photovoltaic absorber and p-type Te thin-film transistor (TFT) channels
- Non-volatile phase-change photonic and electronic memory (GST)
- Thermoelectric thin-film generator arrays

### Buyer Specification Guide
Specify tellurium purity grade (4N (99.99%) / 4N5 / 5N (99.999%)), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of tellurium (Te) sputtering target should I select?**
  A: Standard 4N (99.99%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my tellurium sputtering target be bonded to a copper backing plate?**
  A: High-density sintered tellurium targets are indium-bonded to water-cooled OFHC copper backing plates for low-power RF/DC chalcogenide co-sputtering. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-TE?**
  A: Every tellurium target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Yttrium (Y) Sputtering Targets (`TB-PVD-Y`)
- **URL:** https://tensilebase.com/products/yttrium-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=yttrium-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Y (Elements: Y)
- **CAS Registry Number:** 7440-65-5
- **Synonyms:** High-purity yttrium PVD magnetron target, 3N (99.9%) / 3N5 (99.95% REM) Y planar sputter cathode disc, 3N5 rare-earth yttrium PVD target, reactive Y2O3 / YBCO sputter target
- **Purity / Grades:** 3N (99.9%) / 3N5 (99.95% REM)
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Y, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity yttrium (Y, CAS 7440-65-5) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Vacuum-distilled and cast yttrium targets are machined dry and sealed under argon to prevent ambient surface hydroxylation. Each yttrium target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** Y (CAS 7440-65-5)
- **Available Purity Tiers:** 3N (99.9%) / 3N5 (99.95% REM)
- **Theoretical / Bulk Density:** 4.47 g/cm³
- **Melting Point:** 1,526 °C
- **Thermal / Magnetic Note:** Rare-earth metal; Packed in vacuum/argon barrier bag

### Applications
- Reactive sputtering of Y2O3 high-k dielectrics, plasma-etch-resistant coatings, and YSZ
- YBCO (YBa2Cu3O7) high-temperature superconductor co-sputtering
- Yttrium hydride switchable mirror and hydrogen sensor thin films
- Doping of HfO2 and ZrO2 ferroelectric/solid-electrolyte thin films

### Buyer Specification Guide
Specify yttrium purity grade (3N (99.9%) / 3N5 (99.95% REM)), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of yttrium (Y) sputtering target should I select?**
  A: Standard 3N (99.9%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my yttrium sputtering target be bonded to a copper backing plate?**
  A: Vacuum-distilled and cast yttrium targets are machined dry and sealed under argon to prevent ambient surface hydroxylation. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-Y?**
  A: Every yttrium target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Scandium (Sc) Sputtering Targets (`TB-PVD-SC`)
- **URL:** https://tensilebase.com/products/scandium-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=scandium-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Sc (Elements: Sc)
- **CAS Registry Number:** 7440-20-2
- **Synonyms:** High-purity scandium PVD magnetron target, 3N5 (99.95%) / 4N (99.99% REM) Sc planar sputter cathode disc, 4N scandium AlScN piezoelectric co-sputter target, Sc PVD disc
- **Purity / Grades:** 3N5 (99.95%) / 4N (99.99% REM)
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Sc, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity scandium (Sc, CAS 7440-20-2) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Distilled high-purity scandium targets enable co-sputtering with aluminum to boost the d33 piezoelectric coupling coefficient of Al1-xScxN up to 5×. Each scandium target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** Sc (CAS 7440-20-2)
- **Available Purity Tiers:** 3N5 (99.95%) / 4N (99.99% REM)
- **Theoretical / Bulk Density:** 2.99 g/cm³
- **Melting Point:** 1,541 °C
- **Thermal / Magnetic Note:** Rare-earth metal; Key dopant for 5G BAW AlScN piezoelectrics

### Applications
- 5G/6G RF bulk acoustic wave (BAW / FBAR) filter AlScN piezoelectric co-sputtering
- Ferroelectric wurtzite AlScN non-volatile memory research
- Sc2O3 high-damage-threshold UV laser coatings and gate dielectrics
- Solid oxide fuel cell scandia-stabilized zirconia (ScSZ) thin films

### Buyer Specification Guide
Specify scandium purity grade (3N5 (99.95%) / 4N (99.99% REM)), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of scandium (Sc) sputtering target should I select?**
  A: Standard 3N5 (99.95%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my scandium sputtering target be bonded to a copper backing plate?**
  A: Distilled high-purity scandium targets enable co-sputtering with aluminum to boost the d33 piezoelectric coupling coefficient of Al1-xScxN up to 5×. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-SC?**
  A: Every scandium target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Rare-Earth Metal (La, Ce, Gd, Nd, Er, Yb) (La / Ce / Gd / Nd / Er / Yb) Sputtering Targets (`TB-PVD-RE`)
- **URL:** https://tensilebase.com/products/lanthanum-cerium-gadolinium-targets/
- **Quote URL:** https://tensilebase.com/quote.html?product=lanthanum-cerium-gadolinium-targets
- **Category:** Thin Film Materials
- **Chemical Formula:** La / Ce / Gd / Nd / Er / Yb (Elements: La, Ce, Gd, Nd, Er, Yb)
- **CAS Registry Number:** 7439-91-0
- **Synonyms:** High-purity Rare-Earth metal (la, ce, gd, nd, er, yb) PVD magnetron target, 3N (99.9%) / 3N5 (99.95%) / 4N (REM basis) La / Ce / Gd / Nd / Er / Yb planar sputter cathode disc, Lanthanum, cerium, gadolinium, erbium, neodymium, terbium PVD sputtering targets
- **Purity / Grades:** 3N (99.9%) / 3N5 (99.95%) / 4N (REM basis)
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for La / Ce / Gd / Nd / Er / Yb, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity Rare-Earth metal (la, ce, gd, nd, er, yb) (La / Ce / Gd / Nd / Er / Yb, CAS 7439-91-0) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

We supply the full lanthanide series (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu) as planar sputtering targets sealed in argon/vacuum foil bags. Each Rare-Earth metal (la, ce, gd, nd, er, yb) target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** La / Ce / Gd / Nd / Er / Yb (CAS 7439-91-0)
- **Available Purity Tiers:** 3N (99.9%) / 3N5 (99.95%) / 4N (REM basis)
- **Theoretical / Bulk Density:** 6.15–9.07 g/cm³
- **Melting Point:** 798–1,529 °C
- **Thermal / Magnetic Note:** Reactive lanthanide metals; Argon/oil-free sealed barrier packaging

### Applications
- Magneto-optical and rare-earth transition-metal (TbFeCo, GdFeCo) spintronic media
- Er- and Yb-doped waveguide amplifiers and luminescent upconversion thin films
- High-k rare-earth oxide gate dielectrics (La2O3, CeO2, Gd2O3) and CeO2 SOFC buffer layers
- Hard permanent-magnet NdFeB and SmCo thin-film MEMS actuators

### Buyer Specification Guide
Specify Rare-Earth metal (la, ce, gd, nd, er, yb) purity grade (3N (99.9%) / 3N5 (99.95%) / 4N (REM basis)), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of Rare-Earth metal (la, ce, gd, nd, er, yb) (La / Ce / Gd / Nd / Er / Yb) sputtering target should I select?**
  A: Standard 3N (99.9%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my Rare-Earth metal (la, ce, gd, nd, er, yb) sputtering target be bonded to a copper backing plate?**
  A: We supply the full lanthanide series (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu) as planar sputtering targets sealed in argon/vacuum foil bags. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-RE?**
  A: Every Rare-Earth metal (la, ce, gd, nd, er, yb) target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Silver (Ag) Sputtering Targets (`TB-PVD-AG`)
- **URL:** https://tensilebase.com/products/silver-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=silver-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Ag (Elements: Ag)
- **CAS Registry Number:** 7440-22-4
- **Synonyms:** High-purity silver PVD magnetron target, 4N (99.99%) / 4N5 (99.995%) / 5N Ag planar sputter cathode disc, 4N5 / 5N pure silver PVD sputter target, plasmonic & mirror Ag cathode
- **Purity / Grades:** 4N (99.99%) / 4N5 (99.995%) / 5N
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Ag, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity silver (Ag, CAS 7440-22-4) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Vacuum-melted high-purity silver targets deliver very high DC sputtering deposition rates for mirrors, Low-E glass, and plasmonic nanostructures. Each silver target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** Ag (CAS 7440-22-4)
- **Available Purity Tiers:** 4N (99.99%) / 4N5 (99.995%) / 5N
- **Theoretical / Bulk Density:** 10.49 g/cm³
- **Melting Point:** 961.8 °C
- **Thermal / Magnetic Note:** Diamagnetic; Highest electrical & thermal conductivity of any metal (429 W/m·K)

### Applications
- Ultra-high-reflectivity visible/IR optical mirrors and Low-E architectural glass stacks
- Surface plasmon resonance (SPR) biosensors and metamaterial waveguides
- Flexible transparent Oxide/Ag/Oxide (OMO) electrodes and solar cell contacts
- Antimicrobial medical device and textile PVD coatings

### Buyer Specification Guide
Specify silver purity grade (4N (99.99%) / 4N5 (99.995%) / 5N), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of silver (Ag) sputtering target should I select?**
  A: Standard 4N (99.99%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my silver sputtering target be bonded to a copper backing plate?**
  A: Vacuum-melted high-purity silver targets deliver very high DC sputtering deposition rates for mirrors, Low-E glass, and plasmonic nanostructures. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-AG?**
  A: Every silver target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Titanium-Tungsten (TiW 10/90) (TiW (10:90 wt% / 30:70 at.%)) Sputtering Targets (`TB-PVD-TIW`)
- **URL:** https://tensilebase.com/products/titanium-tungsten-tiw-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=titanium-tungsten-tiw-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** TiW (10:90 wt% / 30:70 at.%) (Elements: Ti)
- **CAS Registry Number:** 7440-33-7
- **Synonyms:** High-purity Titanium-Tungsten (TiW 10/90) PVD magnetron target, 3N5 (99.95%) / 4N Low-Alkali Semiconductor Grade TiW (10:90 wt% / 30:70 at.%) planar sputter cathode disc, TiW 10/90 wt% (30/70 at%) semiconductor barrier sputter target
- **Purity / Grades:** 3N5 (99.95%) / 4N Low-Alkali Semiconductor Grade
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for TiW (10:90 wt% / 30:70 at.%), bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity Titanium-Tungsten (TiW 10/90) (TiW (10:90 wt% / 30:70 at.%), CAS 7440-33-7) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Consolidated by hot isostatic pressing from high-purity Ti and W powders, TiW (10:90 wt%) targets provide dense, single-target co-deposition of adhesion + diffusion barrier films. Each Titanium-Tungsten (TiW 10/90) target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** TiW (10:90 wt% / 30:70 at.%) (CAS 7440-33-7)
- **Available Purity Tiers:** 3N5 (99.95%) / 4N Low-Alkali Semiconductor Grade
- **Theoretical / Bulk Density:** 14.80 g/cm³
- **Melting Point:** 3,000+ °C
- **Thermal / Magnetic Note:** Classic pseudo-alloy diffusion barrier & adhesion layer

### Applications
- Au and Cu under-bump metallization (UBM) diffusion barriers in wafer-level packaging
- Schottky barrier diodes and III-V compound semiconductor contact stacks
- MEMS corrosion-resistant structural and sacrificial-etch stop layers
- Reactive TiWN hard wear and decorative coatings

### Buyer Specification Guide
Specify Titanium-Tungsten (TiW 10/90) purity grade (3N5 (99.95%) / 4N Low-Alkali Semiconductor Grade), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of Titanium-Tungsten (TiW 10/90) (TiW (10:90 wt% / 30:70 at.%)) sputtering target should I select?**
  A: Standard 3N5 (99.95%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my Titanium-Tungsten (TiW 10/90) sputtering target be bonded to a copper backing plate?**
  A: Consolidated by hot isostatic pressing from high-purity Ti and W powders, TiW (10:90 wt%) targets provide dense, single-target co-deposition of adhesion + diffusion barrier films. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-TIW?**
  A: Every Titanium-Tungsten (TiW 10/90) target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Nickel-Chromium (NiCr 80/20) (NiCr (80:20 / 60:40 / 50:50 wt%)) Sputtering Targets (`TB-PVD-NICR`)
- **URL:** https://tensilebase.com/products/nickel-chromium-nicr-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=nickel-chromium-nicr-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** NiCr (80:20 / 60:40 / 50:50 wt%) (Elements: Ti)
- **CAS Registry Number:** 11106-97-1
- **Synonyms:** High-purity Nickel-Chromium (NiCr 80/20) PVD magnetron target, 3N5 (99.95%) / 4N NiCr (80:20 / 60:40 / 50:50 wt%) planar sputter cathode disc, Nichrome 80/20 wt% thin-film resistor PVD target, non-magnetic NiCr sputter disc
- **Purity / Grades:** 3N5 (99.95%) / 4N
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for NiCr (80:20 / 60:40 / 50:50 wt%), bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity Nickel-Chromium (NiCr 80/20) (NiCr (80:20 / 60:40 / 50:50 wt%), CAS 11106-97-1) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Unlike pure nickel, Nichrome 80:20 wt% is non-magnetic at room temperature, allowing thick standard targets (3–6.35 mm) on conventional magnetrons! Each Nickel-Chromium (NiCr 80/20) target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** NiCr (80:20 / 60:40 / 50:50 wt%) (CAS 11106-97-1)
- **Available Purity Tiers:** 3N5 (99.95%) / 4N
- **Theoretical / Bulk Density:** 8.40 g/cm³
- **Melting Point:** 1,400 °C
- **Thermal / Magnetic Note:** Non-magnetic (80:20 wt% is paramagnetic at RT!); Low TCR <±25 ppm/K

### Applications
- Precision low-TCR thin-film chip resistors and strain-gauge networks on Al2O3/AlN
- Micro-heaters, thermal actuators, and bolometer bias resistors
- Adhesion-promoting seed layer under Au/Cu on ceramic and polyimide substrates
- Optical neutral-density (ND) attenuator filter coatings

### Buyer Specification Guide
Specify Nickel-Chromium (NiCr 80/20) purity grade (3N5 (99.95%) / 4N), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of Nickel-Chromium (NiCr 80/20) (NiCr (80:20 / 60:40 / 50:50 wt%)) sputtering target should I select?**
  A: Standard 3N5 (99.95%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my Nickel-Chromium (NiCr 80/20) sputtering target be bonded to a copper backing plate?**
  A: Unlike pure nickel, Nichrome 80:20 wt% is non-magnetic at room temperature, allowing thick standard targets (3–6.35 mm) on conventional magnetrons! Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-NICR?**
  A: Every Nickel-Chromium (NiCr 80/20) target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Permalloy (Ni80Fe20 & CoFeB) (Ni80Fe20 / Ni81Fe19 / Co40Fe40B20) Sputtering Targets (`TB-PVD-NIFE`)
- **URL:** https://tensilebase.com/products/permalloy-nife-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=permalloy-nife-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Ni80Fe20 / Ni81Fe19 / Co40Fe40B20 (Elements: Ti)
- **CAS Registry Number:** 12168-54-6
- **Synonyms:** High-purity permalloy (Ni80Fe20 & CoFeB) PVD magnetron target, 3N5 (99.95%) / 4N Vacuum-Induction Melted Ni80Fe20 / Ni81Fe19 / Co40Fe40B20 planar sputter cathode disc, Ni80Fe20 Permalloy & Co40Fe40B20 spintronic PVD sputtering target
- **Purity / Grades:** 3N5 (99.95%) / 4N Vacuum-Induction Melted
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Ni80Fe20 / Ni81Fe19 / Co40Fe40B20, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity permalloy (Ni80Fe20 & CoFeB) (Ni80Fe20 / Ni81Fe19 / Co40Fe40B20, CAS 12168-54-6) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Vacuum-melted Permalloy (Ni80Fe20 / Ni81Fe19) and amorphous CoFeB targets are precision ground to matched magnetic-pass-through thicknesses. Each permalloy (Ni80Fe20 & CoFeB) target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** Ni80Fe20 / Ni81Fe19 / Co40Fe40B20 (CAS 12168-54-6)
- **Available Purity Tiers:** 3N5 (99.95%) / 4N Vacuum-Induction Melted
- **Theoretical / Bulk Density:** 8.72 g/cm³
- **Melting Point:** 1,440 °C
- **Thermal / Magnetic Note:** Soft ferromagnetic (near-zero magnetostriction) — 1.0–3.0 mm thickness

### Applications
- Anisotropic magnetoresistive (AMR), GMR, and TMR magnetic field sensors
- Spin-transfer torque MRAM (STT-MRAM) CoFeB / MgO tunnel junctions
- Magnonic waveguides, spin-pumping, and ferromagnetic resonance (FMR) research
- High-permeability thin-film magnetic shielding and micro-inductor cores

### Buyer Specification Guide
Specify permalloy (Ni80Fe20 & CoFeB) purity grade (3N5 (99.95%) / 4N Vacuum-Induction Melted), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of permalloy (Ni80Fe20 & CoFeB) (Ni80Fe20 / Ni81Fe19 / Co40Fe40B20) sputtering target should I select?**
  A: Standard 3N5 (99.95%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my permalloy (Ni80Fe20 & CoFeB) sputtering target be bonded to a copper backing plate?**
  A: Vacuum-melted Permalloy (Ni80Fe20 / Ni81Fe19) and amorphous CoFeB targets are precision ground to matched magnetic-pass-through thicknesses. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-NIFE?**
  A: Every permalloy (Ni80Fe20 & CoFeB) target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Aluminum-Scandium (AlSc Alloy) (Al1-xScx (Sc 5–43 at.%)) Sputtering Targets (`TB-PVD-ALSC`)
- **URL:** https://tensilebase.com/products/aluminum-scandium-alsc-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=aluminum-scandium-alsc-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Al1-xScx (Sc 5–43 at.%) (Elements: Ti)
- **CAS Registry Number:** 60683-64-9
- **Synonyms:** High-purity Aluminum-Scandium (AlSc alloy) PVD magnetron target, 4N (99.99%) Vacuum-Melted / HIP Intermetallic Al1-xScx (Sc 5–43 at.%) planar sputter cathode disc, Al0.8Sc0.2 / Al0.7Sc0.3 pre-alloyed AlScN piezo MEMS sputter target
- **Purity / Grades:** 4N (99.99%) Vacuum-Melted / HIP Intermetallic
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Al1-xScx (Sc 5–43 at.%), bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity Aluminum-Scandium (AlSc alloy) (Al1-xScx (Sc 5–43 at.%), CAS 60683-64-9) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Pre-alloyed AlSc targets eliminate multi-cathode cosputtering stoichiometry drift when depositing c-axis oriented piezoelectric and ferroelectric Al1-xScxN films. Each Aluminum-Scandium (AlSc alloy) target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** Al1-xScx (Sc 5–43 at.%) (CAS 60683-64-9)
- **Available Purity Tiers:** 4N (99.99%) Vacuum-Melted / HIP Intermetallic
- **Theoretical / Bulk Density:** 2.80–3.05 g/cm³
- **Melting Point:** 1,100–1,320 °C
- **Thermal / Magnetic Note:** Single-target reactive N2 sputtering of piezoelectric AlScN

### Applications
- 5G/6G RF BAW, FBAR, and SAW acoustic resonator filters (Al0.8Sc0.2N / Al0.7Sc0.3N)
- Ferroelectric wurtzite AlScN non-volatile FeRAM and neuromorphic memory
- Ultrasonic PMUT medical imaging and fingerprint MEMS transducers
- High-coupling energy-harvesting MEMS cantilevers

### Buyer Specification Guide
Specify Aluminum-Scandium (AlSc alloy) purity grade (4N (99.99%) Vacuum-Melted / HIP Intermetallic), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of Aluminum-Scandium (AlSc alloy) (Al1-xScx (Sc 5–43 at.%)) sputtering target should I select?**
  A: Standard 4N (99.99%) Vacuum-Melted purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my Aluminum-Scandium (AlSc alloy) sputtering target be bonded to a copper backing plate?**
  A: Pre-alloyed AlSc targets eliminate multi-cathode cosputtering stoichiometry drift when depositing c-axis oriented piezoelectric and ferroelectric Al1-xScxN films. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-ALSC?**
  A: Every Aluminum-Scandium (AlSc alloy) target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Copper-Gallium & CIGS Alloy (CuGa (70:30 / 75:25) & CuInGaSe2) Sputtering Targets (`TB-PVD-CIGS`)
- **URL:** https://tensilebase.com/products/copper-indium-gallium-cigs-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=copper-indium-gallium-cigs-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** CuGa (70:30 / 75:25) & CuInGaSe2 (Elements: Ti)
- **CAS Registry Number:** 57606-41-4
- **Synonyms:** High-purity Copper-Gallium & CIGS alloy PVD magnetron target, 4N (99.99%) / 4N5 CuGa (70:30 / 75:25) & CuInGaSe2 planar sputter cathode disc, CuGa 70/30 wt% & quaternary CIGS photovoltaic sputtering target
- **Purity / Grades:** 4N (99.99%) / 4N5
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
- **Configurations:** Monolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for CuGa (70:30 / 75:25) & CuInGaSe2, bulk density), dimensional inspection, and indium-bond check if bonded.

### Technical Overview
High-purity Copper-Gallium & CIGS alloy (CuGa (70:30 / 75:25) & CuInGaSe2, CAS 57606-41-4) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Homogenized CuGa binary and quaternary CuInGaSe2 (CIGS) targets deliver uniform Ga/(Ga+In) grading across flexible and glass solar substrates. Each Copper-Gallium & CIGS alloy target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

### Nominal Properties
- **Chemical Formula & CAS #:** CuGa (70:30 / 75:25) & CuInGaSe2 (CAS 57606-41-4)
- **Available Purity Tiers:** 4N (99.99%) / 4N5
- **Theoretical / Bulk Density:** 8.15 g/cm³
- **Melting Point:** 850–980 °C
- **Thermal / Magnetic Note:** Single-phase/fine-microstructure photovoltaic precursor target

### Applications
- High-efficiency flexible and tandem CIGS thin-film solar cell absorbers
- Two-step CuGa + In metallic precursor sputtering followed by selenization
- Wide-bandgap CuGaSe2 photoelectrochemical photocathodes
- Chalcopyrite optoelectronic detector research

### Buyer Specification Guide
Specify Copper-Gallium & CIGS alloy purity grade (4N (99.99%) / 4N5), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

### Technical FAQs
- **Q: What purity grade of Copper-Gallium & CIGS alloy (CuGa (70:30 / 75:25) & CuInGaSe2) sputtering target should I select?**
  A: Standard 4N (99.99%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
- **Q: Should my Copper-Gallium & CIGS alloy sputtering target be bonded to a copper backing plate?**
  A: Homogenized CuGa binary and quaternary CuInGaSe2 (CIGS) targets deliver uniform Ga/(Ga+In) grading across flexible and glass solar substrates. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
- **Q: What batch certification ships with TB-PVD-CIGS?**
  A: Every Copper-Gallium & CIGS alloy target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.

---
## Indium Tin Oxide (In2O3:SnO2 (90:10 wt%)) Sputtering Targets (`TB-PVD-ITO`)
- **URL:** https://tensilebase.com/products/ito-indium-tin-oxide-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=ito-indium-tin-oxide-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** In2O3:SnO2 (90:10 wt%) (Elements: In, Sn, O)
- **CAS Registry Number:** 50926-11-9
- **Synonyms:** Indium Tin Oxide RF magnetron target, In2O3:SnO2 (90:10 wt%) PVD dielectric cathode disc, 90/10 In2O3:SnO2 TCO sputter target, high-density black/blue ITO cathode
- **Purity / Grades:** 4N (99.99%) · ≥99.5% Relative Density
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
- **Configurations:** Hot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
- **Typical Lead Time:** 10–16 business days
- **Documentation Included:** Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

### Technical Overview
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99%) · ≥99.5% Relative Density precursor powders, our indium tin oxide (In2O3:SnO2 (90:10 wt%), CAS 50926-11-9) sputtering targets achieve high relative density (typically 96%–99.5% of 7.12 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

Oxygen-sintered to ≥99.5% theoretical density with low bulk resistivity (<1.5 × 10⁻⁴ Ω·cm), our 90:10 wt% ITO targets support both DC and RF magnetron sputtering with minimal black nodule build-up. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering In2O3:SnO2 (90:10 wt%) targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

### Nominal Properties
- **Formula & CAS #:** In2O3:SnO2 (90:10 wt%) (CAS 50926-11-9)
- **Purity Grades:** 4N (99.99%) · ≥99.5% Relative Density
- **Bulk / Theoretical Density:** 7.12 g/cm³ (≥96%–99.5% relative density)
- **Recommended Bonding:** Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
- **Recommended Power Ramp:** RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

### Applications
- Transparent conductive electrodes (TCO) for OLED, LCD, touch panels, and electrochromics
- Perovskite, silicon heterojunction (SHJ), and organic solar cell front windows
- EMI/RFI optical shielding viewports and heated anti-fog aerospace windows
- Infrared-reflective Low-E coatings and optoelectronic sensors

### Buyer Specification Guide
Specify In2O3:SnO2 (90:10 wt%) purity (4N (99.99%) · ≥99.5% Relative Density), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

### Technical FAQs
- **Q: Why should indium tin oxide (In2O3:SnO2 (90:10 wt%)) targets be indium-bonded to an OFHC copper backing plate?**
  A: As a brittle ceramic, In2O3:SnO2 (90:10 wt%) develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
- **Q: What RF power conditioning procedure avoids cracking a new In2O3:SnO2 (90:10 wt%) target?**
  A: Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
- **Q: Is oxygen or nitrogen reactive gas backfill needed when sputtering In2O3:SnO2 (90:10 wt%)?**
  A: RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.

---
## Aluminum-Doped Zinc Oxide (AZO) (ZnO:Al2O3 (98:2 wt%)) Sputtering Targets (`TB-PVD-AZO`)
- **URL:** https://tensilebase.com/products/azo-aluminum-doped-zinc-oxide-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=azo-aluminum-doped-zinc-oxide-target
- **Category:** Thin Film Materials
- **Chemical Formula:** ZnO:Al2O3 (98:2 wt%) (Elements: Zn, Al, O)
- **CAS Registry Number:** 1314-13-2
- **Synonyms:** Aluminum-Doped Zinc Oxide (AZO) RF magnetron target, ZnO:Al2O3 (98:2 wt%) PVD dielectric cathode disc, ZnO:Al2O3 98/2 wt% AZO TCO sputter target, indium-free transparent conductive oxide
- **Purity / Grades:** 4N (99.99%)
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
- **Configurations:** Hot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
- **Typical Lead Time:** 10–16 business days
- **Documentation Included:** Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

### Technical Overview
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99%) precursor powders, our Aluminum-Doped zinc oxide (AZO) (ZnO:Al2O3 (98:2 wt%), CAS 1314-13-2) sputtering targets achieve high relative density (typically 96%–99.5% of 5.55 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

Conductive 98:2 wt% (or 99:1 wt%) sintered AZO targets offer an indium-free, hydrogen-plasma-stable transparent conductor compatible with DC, pulsed-DC, and RF magnetrons. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering ZnO:Al2O3 (98:2 wt%) targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

### Nominal Properties
- **Formula & CAS #:** ZnO:Al2O3 (98:2 wt%) (CAS 1314-13-2)
- **Purity Grades:** 4N (99.99%)
- **Bulk / Theoretical Density:** 5.55 g/cm³ (≥96%–99.5% relative density)
- **Recommended Bonding:** Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
- **Recommended Power Ramp:** RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

### Applications
- Indium-free transparent electrodes for CIGS, CdTe, and thin-film silicon photovoltaics
- Hydrogen-plasma-resistant TCO windows and LED current-spreading layers
- Low-E architectural glass thermal-barrier stacks
- Transparent thin-film transistor (TTFT) electrodes

### Buyer Specification Guide
Specify ZnO:Al2O3 (98:2 wt%) purity (4N (99.99%)), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

### Technical FAQs
- **Q: Why should Aluminum-Doped zinc oxide (AZO) (ZnO:Al2O3 (98:2 wt%)) targets be indium-bonded to an OFHC copper backing plate?**
  A: As a brittle ceramic, ZnO:Al2O3 (98:2 wt%) develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
- **Q: What RF power conditioning procedure avoids cracking a new ZnO:Al2O3 (98:2 wt%) target?**
  A: Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
- **Q: Is oxygen or nitrogen reactive gas backfill needed when sputtering ZnO:Al2O3 (98:2 wt%)?**
  A: RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.

---
## Zinc Oxide (ZnO) Sputtering Targets (`TB-PVD-ZNO`)
- **URL:** https://tensilebase.com/products/zinc-oxide-zno-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=zinc-oxide-zno-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** ZnO (Elements: Zn, O)
- **CAS Registry Number:** 1314-13-2
- **Synonyms:** Zinc Oxide RF magnetron target, ZnO PVD dielectric cathode disc, Intrinsic 4N5/5N ZnO piezoelectric & ETL sputter target
- **Purity / Grades:** 4N (99.99%) / 4N5 / 5N
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
- **Configurations:** Hot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
- **Typical Lead Time:** 10–16 business days
- **Documentation Included:** Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

### Technical Overview
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99%) / 4N5 / 5N precursor powders, our zinc oxide (ZnO, CAS 1314-13-2) sputtering targets achieve high relative density (typically 96%–99.5% of 5.55 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

Stoichiometric intrinsic ZnO targets grow strongly c-axis (0002) oriented wurtzite thin films with high piezoelectric coupling and wide 3.37 eV direct bandgap. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering ZnO targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

### Nominal Properties
- **Formula & CAS #:** ZnO (CAS 1314-13-2)
- **Purity Grades:** 4N (99.99%) / 4N5 / 5N
- **Bulk / Theoretical Density:** 5.55 g/cm³ (≥96%–99.5% relative density)
- **Recommended Bonding:** Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
- **Recommended Power Ramp:** RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

### Applications
- Surface acoustic wave (SAW) and FBAR piezoelectric RF resonator filters
- Electron transport layers (ETL) in perovskite and organic solar cells
- UV photodetectors, gas sensors, and varistor thin films
- Buffer layers for epitaxial GaN and ZnO nanowire growth

### Buyer Specification Guide
Specify ZnO purity (4N (99.99%) / 4N5 / 5N), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

### Technical FAQs
- **Q: Why should zinc oxide (ZnO) targets be indium-bonded to an OFHC copper backing plate?**
  A: As a brittle ceramic, ZnO develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
- **Q: What RF power conditioning procedure avoids cracking a new ZnO target?**
  A: Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
- **Q: Is oxygen or nitrogen reactive gas backfill needed when sputtering ZnO?**
  A: RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.

---
## Aluminum Oxide (Alumina) (Al2O3) Sputtering Targets (`TB-PVD-ALO`)
- **URL:** https://tensilebase.com/products/alumina-al2o3-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=alumina-al2o3-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Al2O3 (Elements: Al, O)
- **CAS Registry Number:** 1344-28-1
- **Synonyms:** Aluminum Oxide (Alumina) RF magnetron target, Al2O3 PVD dielectric cathode disc, 4N5 RF dielectric Al2O3 sputter target, indium-bonded alumina target
- **Purity / Grades:** 4N (99.99%) / 4N5
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
- **Configurations:** Hot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
- **Typical Lead Time:** 10–16 business days
- **Documentation Included:** Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

### Technical Overview
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99%) / 4N5 precursor powders, our aluminum oxide (alumina) (Al2O3, CAS 1344-28-1) sputtering targets achieve high relative density (typically 96%–99.5% of 3.90 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

Dense sintered 4N–4N5 Al2O3 targets deposit amorphous dielectric barrier, passivation, and optical films with high breakdown strength under RF magnetron sputtering. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering Al2O3 targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

### Nominal Properties
- **Formula & CAS #:** Al2O3 (CAS 1344-28-1)
- **Purity Grades:** 4N (99.99%) / 4N5
- **Bulk / Theoretical Density:** 3.90 g/cm³ (≥96%–99.5% relative density)
- **Recommended Bonding:** Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
- **Recommended Power Ramp:** RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

### Applications
- Moisture/gas encapsulation barriers for OLEDs, sensors, and microelectronics
- Magnetic tunnel junction (MTJ) AlOx tunnel barriers and high-k dielectric stacks
- Optical anti-reflection (n ~ 1.65) and protective mirror overcoats
- Wear-resistant electrically insulating tool and bearing coatings

### Buyer Specification Guide
Specify Al2O3 purity (4N (99.99%) / 4N5), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

### Technical FAQs
- **Q: Why should aluminum oxide (alumina) (Al2O3) targets be indium-bonded to an OFHC copper backing plate?**
  A: As a brittle ceramic, Al2O3 develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
- **Q: What RF power conditioning procedure avoids cracking a new Al2O3 target?**
  A: Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
- **Q: Is oxygen or nitrogen reactive gas backfill needed when sputtering Al2O3?**
  A: RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.

---
## Silicon Dioxide (Fused Quartz) (SiO2) Sputtering Targets (`TB-PVD-SIO2`)
- **URL:** https://tensilebase.com/products/silicon-dioxide-sio2-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=silicon-dioxide-sio2-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** SiO2 (Elements: Si, O)
- **CAS Registry Number:** 60676-86-0
- **Synonyms:** Silicon Dioxide (Fused Quartz) RF magnetron target, SiO2 PVD dielectric cathode disc, 4N5/5N fused silica SiO2 RF sputter target, optical quartz cathode disc
- **Purity / Grades:** 4N5 (99.995%) / 5N (99.999%)
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
- **Configurations:** Hot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
- **Typical Lead Time:** 10–16 business days
- **Documentation Included:** Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

### Technical Overview
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N5 (99.995%) / 5N (99.999%) precursor powders, our silicon dioxide (fused quartz) (SiO2, CAS 60676-86-0) sputtering targets achieve high relative density (typically 96%–99.5% of 2.20 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

Optically clear 4N5–5N fused quartz targets provide zero porosity, ultra-low trace alkali (<1 ppm Na), and exceptional thermal shock tolerance for RF low-index optical and dielectric PVD. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering SiO2 targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

### Nominal Properties
- **Formula & CAS #:** SiO2 (CAS 60676-86-0)
- **Purity Grades:** 4N5 (99.995%) / 5N (99.999%)
- **Bulk / Theoretical Density:** 2.20 g/cm³ (≥96%–99.5% relative density)
- **Recommended Bonding:** Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
- **Recommended Power Ramp:** RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

### Applications
- Low-refractive-index (n ~ 1.46) quarter-wave optical filters, AR coatings, and Bragg mirrors
- Interlayer dielectric (ILD) and surface passivation in MEMS and photonics
- Low-loss SiO2 optical waveguide cladding layers
- Protective hydrophobic/hard topcoats on optical lenses and sensors

### Buyer Specification Guide
Specify SiO2 purity (4N5 (99.995%) / 5N (99.999%)), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

### Technical FAQs
- **Q: Why should silicon dioxide (fused quartz) (SiO2) targets be indium-bonded to an OFHC copper backing plate?**
  A: As a brittle ceramic, SiO2 develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
- **Q: What RF power conditioning procedure avoids cracking a new SiO2 target?**
  A: Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
- **Q: Is oxygen or nitrogen reactive gas backfill needed when sputtering SiO2?**
  A: RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.

---
## Titanium Dioxide (TiO2 / TiO2-x) Sputtering Targets (`TB-PVD-TIO2`)
- **URL:** https://tensilebase.com/products/titanium-dioxide-tio2-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=titanium-dioxide-tio2-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** TiO2 / TiO2-x (Elements: Ti, O)
- **CAS Registry Number:** 13463-67-7
- **Synonyms:** Titanium Dioxide RF magnetron target, TiO2 / TiO2-x PVD dielectric cathode disc, White RF TiO2 & conductive black DC TiO2-x ceramic sputter target
- **Purity / Grades:** 4N (99.99%)
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
- **Configurations:** Hot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
- **Typical Lead Time:** 10–16 business days
- **Documentation Included:** Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

### Technical Overview
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99%) precursor powders, our titanium dioxide (TiO2 / TiO2-x, CAS 13463-67-7) sputtering targets achieve high relative density (typically 96%–99.5% of 4.15 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

Available both as white stoichiometric rutile TiO2 (for RF sputtering) and dark oxygen-reduced semiconducting TiO2-x ceramic (enabling higher-rate DC / pulsed-DC sputtering!). Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering TiO2 / TiO2-x targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

### Nominal Properties
- **Formula & CAS #:** TiO2 / TiO2-x (CAS 13463-67-7)
- **Purity Grades:** 4N (99.99%)
- **Bulk / Theoretical Density:** 4.15 g/cm³ (≥96%–99.5% relative density)
- **Recommended Bonding:** Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
- **Recommended Power Ramp:** RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

### Applications
- High-refractive-index (n ~ 2.4–2.5) optical interference filters and cold mirrors
- Self-cleaning photocatalytic and superhydrophilic window coatings
- Compact TiO2 electron-transport layers (c-TiO2) in perovskite and dye-sensitized solar cells
- Biocompatible osseointegration and dielectric sensor films

### Buyer Specification Guide
Specify TiO2 / TiO2-x purity (4N (99.99%)), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

### Technical FAQs
- **Q: Why should titanium dioxide (TiO2 / TiO2-x) targets be indium-bonded to an OFHC copper backing plate?**
  A: As a brittle ceramic, TiO2 / TiO2-x develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
- **Q: What RF power conditioning procedure avoids cracking a new TiO2 / TiO2-x target?**
  A: Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
- **Q: Is oxygen or nitrogen reactive gas backfill needed when sputtering TiO2 / TiO2-x?**
  A: RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.

---
## Tantalum Pentoxide (Ta2O5) Sputtering Targets (`TB-PVD-TA2O5`)
- **URL:** https://tensilebase.com/products/tantalum-pentoxide-ta2o5-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=tantalum-pentoxide-ta2o5-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Ta2O5 (Elements: Ta, O)
- **CAS Registry Number:** 1314-61-0
- **Synonyms:** Tantalum Pentoxide RF magnetron target, Ta2O5 PVD dielectric cathode disc, 4N5 Ta2O5 optical & MIM dielectric RF sputtering target
- **Purity / Grades:** 4N (99.99%) / 4N5 (99.995%)
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
- **Configurations:** Hot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
- **Typical Lead Time:** 10–16 business days
- **Documentation Included:** Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

### Technical Overview
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99%) / 4N5 (99.995%) precursor powders, our tantalum pentoxide (Ta2O5, CAS 1314-61-0) sputtering targets achieve high relative density (typically 96%–99.5% of 8.10 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

Hot-pressed 4N5 Ta2O5 targets deposit ultra-low-absorption high-index (n ~ 2.15) amorphous optical films and high-capacitance dielectric layers. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering Ta2O5 targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

### Nominal Properties
- **Formula & CAS #:** Ta2O5 (CAS 1314-61-0)
- **Purity Grades:** 4N (99.99%) / 4N5 (99.995%)
- **Bulk / Theoretical Density:** 8.10 g/cm³ (≥96%–99.5% relative density)
- **Recommended Bonding:** Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
- **Recommended Power Ramp:** RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

### Applications
- Precision laser gyroscope mirrors, DWDM telecom filters, and gravitational-wave low-noise coatings
- High-k DRAM / MIM capacitor dielectrics (εr ~ 25)
- pH-sensitive ISFET ion-selective biosensor gate membranes
- Anti-reflection coatings on silicon solar cells and image sensors

### Buyer Specification Guide
Specify Ta2O5 purity (4N (99.99%) / 4N5 (99.995%)), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

### Technical FAQs
- **Q: Why should tantalum pentoxide (Ta2O5) targets be indium-bonded to an OFHC copper backing plate?**
  A: As a brittle ceramic, Ta2O5 develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
- **Q: What RF power conditioning procedure avoids cracking a new Ta2O5 target?**
  A: Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
- **Q: Is oxygen or nitrogen reactive gas backfill needed when sputtering Ta2O5?**
  A: RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.

---
## Niobium Pentoxide (Nb2O5) Sputtering Targets (`TB-PVD-NB2O5`)
- **URL:** https://tensilebase.com/products/niobium-pentoxide-nb2o5-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=niobium-pentoxide-nb2o5-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Nb2O5 (Elements: Nb, O)
- **CAS Registry Number:** 1313-96-8
- **Synonyms:** Niobium Pentoxide RF magnetron target, Nb2O5 PVD dielectric cathode disc, 4N Nb2O5 & conductive Nb2O5-x optical PVD sputter target
- **Purity / Grades:** 4N (99.99%) / 4N5
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
- **Configurations:** Hot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
- **Typical Lead Time:** 10–16 business days
- **Documentation Included:** Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

### Technical Overview
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99%) / 4N5 precursor powders, our niobium pentoxide (Nb2O5, CAS 1313-96-8) sputtering targets achieve high relative density (typically 96%–99.5% of 4.55 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

Available in stoichiometric white Nb2O5 (RF) and conductive black sub-oxide Nb2O5-x (pulsed-DC/RF) for high-index (n ~ 2.30–2.35) visible/NIR optical coatings. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering Nb2O5 targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

### Nominal Properties
- **Formula & CAS #:** Nb2O5 (CAS 1313-96-8)
- **Purity Grades:** 4N (99.99%) / 4N5
- **Bulk / Theoretical Density:** 4.55 g/cm³ (≥96%–99.5% relative density)
- **Recommended Bonding:** Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
- **Recommended Power Ramp:** RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

### Applications
- High-index visible/NIR bandpass filters, beam splitters, and AR stacks paired with SiO2
- Electrochromic counter-electrode and memristor resistive-switching (RRAM) films
- High-permittivity dielectric capacitor layers (εr ~ 35–45)
- Ophthalmic and precision camera lens multi-layer coatings

### Buyer Specification Guide
Specify Nb2O5 purity (4N (99.99%) / 4N5), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

### Technical FAQs
- **Q: Why should niobium pentoxide (Nb2O5) targets be indium-bonded to an OFHC copper backing plate?**
  A: As a brittle ceramic, Nb2O5 develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
- **Q: What RF power conditioning procedure avoids cracking a new Nb2O5 target?**
  A: Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
- **Q: Is oxygen or nitrogen reactive gas backfill needed when sputtering Nb2O5?**
  A: RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.

---
## Hafnium Dioxide (Hafnia) (HfO2) Sputtering Targets (`TB-PVD-HFO2`)
- **URL:** https://tensilebase.com/products/hafnium-dioxide-hfo2-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=hafnium-dioxide-hfo2-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** HfO2 (Elements: Hf, O)
- **CAS Registry Number:** 12055-23-1
- **Synonyms:** Hafnium Dioxide (Hafnia) RF magnetron target, HfO2 PVD dielectric cathode disc, 4N HfO2 high-k gate & UV laser mirror sputtering target
- **Purity / Grades:** 4N (99.99% excl. Zr) / Low-Zr 4N
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
- **Configurations:** Hot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
- **Typical Lead Time:** 10–16 business days
- **Documentation Included:** Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

### Technical Overview
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99% excl. Zr) / Low-Zr 4N precursor powders, our hafnium dioxide (hafnia) (HfO2, CAS 12055-23-1) sputtering targets achieve high relative density (typically 96%–99.5% of 9.50 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

Dense monoclinic/stabilized HfO2 targets combine wide bandgap (~5.7 eV, UV transparency to 220 nm) with high dielectric permittivity (εr ~ 20–25). Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering HfO2 targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

### Nominal Properties
- **Formula & CAS #:** HfO2 (CAS 12055-23-1)
- **Purity Grades:** 4N (99.99% excl. Zr) / Low-Zr 4N
- **Bulk / Theoretical Density:** 9.50 g/cm³ (≥96%–99.5% relative density)
- **Recommended Bonding:** Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
- **Recommended Power Ramp:** RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

### Applications
- CMOS high-k MOSFET gate oxides and ferroelectric Zr/Si/Y-doped HfO2 FeRAM
- High-peak-power UV/excimer and femtosecond laser mirror coatings (n ~ 2.0)
- Memristive neuromorphic RRAM crossbar switching oxides
- Refractory corrosion and thermal barrier sensor coatings

### Buyer Specification Guide
Specify HfO2 purity (4N (99.99% excl. Zr) / Low-Zr 4N), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

### Technical FAQs
- **Q: Why should hafnium dioxide (hafnia) (HfO2) targets be indium-bonded to an OFHC copper backing plate?**
  A: As a brittle ceramic, HfO2 develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
- **Q: What RF power conditioning procedure avoids cracking a new HfO2 target?**
  A: Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
- **Q: Is oxygen or nitrogen reactive gas backfill needed when sputtering HfO2?**
  A: RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.

---
## Zirconium Dioxide & YSZ (ZrO2 / 8 mol% Y2O3-ZrO2) Sputtering Targets (`TB-PVD-ZRO2`)
- **URL:** https://tensilebase.com/products/zirconia-ysz-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=zirconia-ysz-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** ZrO2 / 8 mol% Y2O3-ZrO2 (Elements: Zr, Y, O)
- **CAS Registry Number:** 1314-23-4
- **Synonyms:** Zirconium Dioxide & YSZ RF magnetron target, ZrO2 / 8 mol% Y2O3-ZrO2 PVD dielectric cathode disc, 8YSZ & pure 4N ZrO2 ceramic RF sputtering target
- **Purity / Grades:** 4N (99.99%)
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
- **Configurations:** Hot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
- **Typical Lead Time:** 10–16 business days
- **Documentation Included:** Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

### Technical Overview
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99%) precursor powders, our zirconium dioxide & YSZ (ZrO2 / 8 mol% Y2O3-ZrO2, CAS 1314-23-4) sputtering targets achieve high relative density (typically 96%–99.5% of 5.90 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

Supplied either as undoped ZrO2 or 3–8 mol% yttria-stabilized zirconia (YSZ) to prevent phase-change volume cracking and enable thin-film oxygen-ion conduction. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering ZrO2 / 8 mol% Y2O3-ZrO2 targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

### Nominal Properties
- **Formula & CAS #:** ZrO2 / 8 mol% Y2O3-ZrO2 (CAS 1314-23-4)
- **Purity Grades:** 4N (99.99%)
- **Bulk / Theoretical Density:** 5.90 g/cm³ (≥96%–99.5% relative density)
- **Recommended Bonding:** Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
- **Recommended Power Ramp:** RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

### Applications
- Micro-SOFC / SOEC thin-film solid oxide electrolyte membranes (8YSZ)
- Epitaxial buffer layers on silicon for YBCO superconductor and perovskite growth
- High-index (n ~ 2.1) UV-NIR optical interference and laser damage coatings
- Thermal barrier and wear/scratch protective overcoats

### Buyer Specification Guide
Specify ZrO2 / 8 mol% Y2O3-ZrO2 purity (4N (99.99%)), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

### Technical FAQs
- **Q: Why should zirconium dioxide & YSZ (ZrO2 / 8 mol% Y2O3-ZrO2) targets be indium-bonded to an OFHC copper backing plate?**
  A: As a brittle ceramic, ZrO2 / 8 mol% Y2O3-ZrO2 develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
- **Q: What RF power conditioning procedure avoids cracking a new ZrO2 / 8 mol% Y2O3-ZrO2 target?**
  A: Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
- **Q: Is oxygen or nitrogen reactive gas backfill needed when sputtering ZrO2 / 8 mol% Y2O3-ZrO2?**
  A: RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.

---
## Tungsten Trioxide (WO3) Sputtering Targets (`TB-PVD-WO3`)
- **URL:** https://tensilebase.com/products/tungsten-trioxide-wo3-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=tungsten-trioxide-wo3-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** WO3 (Elements: W, O)
- **CAS Registry Number:** 1314-35-8
- **Synonyms:** Tungsten Trioxide RF magnetron target, WO3 PVD dielectric cathode disc, 4N WO3 electrochromic & gas-sensor PVD sputtering target
- **Purity / Grades:** 4N (99.99%)
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
- **Configurations:** Hot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
- **Typical Lead Time:** 10–16 business days
- **Documentation Included:** Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

### Technical Overview
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99%) precursor powders, our tungsten trioxide (WO3, CAS 1314-35-8) sputtering targets achieve high relative density (typically 96%–99.5% of 7.05 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

Hot-pressed high-density WO3 targets deposit uniform electrochromic and gas-sensing thin films with fast H+/Li+ ion intercalation coloration efficiency. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering WO3 targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

### Nominal Properties
- **Formula & CAS #:** WO3 (CAS 1314-35-8)
- **Purity Grades:** 4N (99.99%)
- **Bulk / Theoretical Density:** 7.05 g/cm³ (≥96%–99.5% relative density)
- **Recommended Bonding:** Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
- **Recommended Power Ramp:** RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

### Applications
- Electrochromic smart windows, auto-dimming mirrors, and display devices
- Chemiresistive NO2, H2, NH3, and H2S gas sensor active layers
- Hole-transport / charge-generation layers in tandem OLED and organic solar cells
- Photoelectrochemical water-splitting photoanodes

### Buyer Specification Guide
Specify WO3 purity (4N (99.99%)), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

### Technical FAQs
- **Q: Why should tungsten trioxide (WO3) targets be indium-bonded to an OFHC copper backing plate?**
  A: As a brittle ceramic, WO3 develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
- **Q: What RF power conditioning procedure avoids cracking a new WO3 target?**
  A: Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
- **Q: Is oxygen or nitrogen reactive gas backfill needed when sputtering WO3?**
  A: RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.

---
## Molybdenum Trioxide (MoO3) Sputtering Targets (`TB-PVD-MOO3`)
- **URL:** https://tensilebase.com/products/molybdenum-trioxide-moo3-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=molybdenum-trioxide-moo3-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** MoO3 (Elements: Mo, O)
- **CAS Registry Number:** 1313-27-5
- **Synonyms:** Molybdenum Trioxide RF magnetron target, MoO3 PVD dielectric cathode disc, 4N MoO3 hole-transport & 2D precursor sputtering target
- **Purity / Grades:** 4N (99.99%)
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
- **Configurations:** Hot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
- **Typical Lead Time:** 10–16 business days
- **Documentation Included:** Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

### Technical Overview
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99%) precursor powders, our molybdenum trioxide (MoO3, CAS 1313-27-5) sputtering targets achieve high relative density (typically 96%–99.5% of 4.65 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

High-work-function (~6.7 eV) sintered MoO3 targets enable damage-free sputter or thermal deposition of hole-selective contacts and 2D MoS2 precursors. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering MoO3 targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

### Nominal Properties
- **Formula & CAS #:** MoO3 (CAS 1313-27-5)
- **Purity Grades:** 4N (99.99%)
- **Bulk / Theoretical Density:** 4.65 g/cm³ (≥96%–99.5% relative density)
- **Recommended Bonding:** Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
- **Recommended Power Ramp:** RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

### Applications
- High-work-function hole-injection / hole-transport layers (HIL/HTL) in OLEDs and perovskite solar cells
- Dopant-free selective hole contacts for crystalline silicon heterojunction solar cells
- Two-step sulfurization precursor for wafer-scale 2D MoS2 synthesis
- Electrochromic and neuromorphic synaptic transistor channels

### Buyer Specification Guide
Specify MoO3 purity (4N (99.99%)), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

### Technical FAQs
- **Q: Why should molybdenum trioxide (MoO3) targets be indium-bonded to an OFHC copper backing plate?**
  A: As a brittle ceramic, MoO3 develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
- **Q: What RF power conditioning procedure avoids cracking a new MoO3 target?**
  A: Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
- **Q: Is oxygen or nitrogen reactive gas backfill needed when sputtering MoO3?**
  A: RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.

---
## Nickel Oxide (NiO (or Li-doped NiOx)) Sputtering Targets (`TB-PVD-NIO`)
- **URL:** https://tensilebase.com/products/nickel-oxide-nio-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=nickel-oxide-nio-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** NiO (or Li-doped NiOx) (Elements: Ni, O)
- **CAS Registry Number:** 1313-99-1
- **Synonyms:** Nickel Oxide RF magnetron target, NiO (or Li-doped NiOx) PVD dielectric cathode disc, 4N NiOx perovskite HTL & p-type oxide sputtering target
- **Purity / Grades:** 4N (99.99%)
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
- **Configurations:** Hot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
- **Typical Lead Time:** 10–16 business days
- **Documentation Included:** Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

### Technical Overview
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99%) precursor powders, our nickel oxide (NiO (or Li-doped NiOx), CAS 1313-99-1) sputtering targets achieve high relative density (typically 96%–99.5% of 6.50 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

Dense green/black sintered NiO (and conductive Li-doped NiOx) targets deposit wide-bandgap p-type oxide semiconductors and complementary electrochromic layers. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering NiO (or Li-doped NiOx) targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

### Nominal Properties
- **Formula & CAS #:** NiO (or Li-doped NiOx) (CAS 1313-99-1)
- **Purity Grades:** 4N (99.99%)
- **Bulk / Theoretical Density:** 6.50 g/cm³ (≥96%–99.5% relative density)
- **Recommended Bonding:** Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
- **Recommended Power Ramp:** RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

### Applications
- Inorganic p-type hole-transport layers (NiOx HTL) in inverted p-i-n perovskite solar cells
- Anodic complementary electrochromic coloration layers paired with cathodic WO3
- Antiferromagnetic exchange-bias pinning layers in spintronic sensors
- p-NiO / n-Ga2O3 heterojunction power electronics

### Buyer Specification Guide
Specify NiO (or Li-doped NiOx) purity (4N (99.99%)), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

### Technical FAQs
- **Q: Why should nickel oxide (NiO (or Li-doped NiOx)) targets be indium-bonded to an OFHC copper backing plate?**
  A: As a brittle ceramic, NiO (or Li-doped NiOx) develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
- **Q: What RF power conditioning procedure avoids cracking a new NiO (or Li-doped NiOx) target?**
  A: Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
- **Q: Is oxygen or nitrogen reactive gas backfill needed when sputtering NiO (or Li-doped NiOx)?**
  A: RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.

---
## Tin Dioxide & Antimony/Fluorine Doped (SnO2 / ATO (SnO2:Sb2O3)) Sputtering Targets (`TB-PVD-SNO2`)
- **URL:** https://tensilebase.com/products/tin-dioxide-sno2-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=tin-dioxide-sno2-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** SnO2 / ATO (SnO2:Sb2O3) (Elements: Sn, Sb, O)
- **CAS Registry Number:** 18282-10-5
- **Synonyms:** Tin Dioxide & Antimony/Fluorine Doped RF magnetron target, SnO2 / ATO (SnO2:Sb2O3) PVD dielectric cathode disc, 4N SnO2 perovskite ETL & ATO conductive sputtering target
- **Purity / Grades:** 4N (99.99%)
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
- **Configurations:** Hot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
- **Typical Lead Time:** 10–16 business days
- **Documentation Included:** Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

### Technical Overview
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99%) precursor powders, our tin dioxide & Antimony/Fluorine doped (SnO2 / ATO (SnO2:Sb2O3), CAS 18282-10-5) sputtering targets achieve high relative density (typically 96%–99.5% of 6.80 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

Supplied as undoped intrinsic SnO2 (for perovskite ETLs and gas sensors) or Sb-doped conductive ATO (90:10 wt%) for higher-rate DC/RF transparent conductor sputtering. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering SnO2 / ATO (SnO2:Sb2O3) targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

### Nominal Properties
- **Formula & CAS #:** SnO2 / ATO (SnO2:Sb2O3) (CAS 18282-10-5)
- **Purity Grades:** 4N (99.99%)
- **Bulk / Theoretical Density:** 6.80 g/cm³ (≥96%–99.5% relative density)
- **Recommended Bonding:** Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
- **Recommended Power Ramp:** RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

### Applications
- Low-temperature electron-transport layers (SnO2 ETL) in planar perovskite & tandem solar cells
- Solid-state semiconductor VOC, CO, and H2 gas sensor arrays
- Antimony-doped tin oxide (ATO) heat-shielding and anti-static transparent coatings
- Low-E glass oxidation-barrier overcoat layers

### Buyer Specification Guide
Specify SnO2 / ATO (SnO2:Sb2O3) purity (4N (99.99%)), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

### Technical FAQs
- **Q: Why should tin dioxide & Antimony/Fluorine doped (SnO2 / ATO (SnO2:Sb2O3)) targets be indium-bonded to an OFHC copper backing plate?**
  A: As a brittle ceramic, SnO2 / ATO (SnO2:Sb2O3) develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
- **Q: What RF power conditioning procedure avoids cracking a new SnO2 / ATO (SnO2:Sb2O3) target?**
  A: Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
- **Q: Is oxygen or nitrogen reactive gas backfill needed when sputtering SnO2 / ATO (SnO2:Sb2O3)?**
  A: RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.

---
## Indium Gallium Zinc Oxide (IGZO) (InGaZnO4 (In:Ga:Zn = 1:1:1 at.%)) Sputtering Targets (`TB-PVD-IGZO`)
- **URL:** https://tensilebase.com/products/igzo-indium-gallium-zinc-oxide-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=igzo-indium-gallium-zinc-oxide-target
- **Category:** Thin Film Materials
- **Chemical Formula:** InGaZnO4 (In:Ga:Zn = 1:1:1 at.%) (Elements: In, Ga, Zn, O)
- **CAS Registry Number:** Composition dependent; confirm supplier SDS
- **Synonyms:** Indium Gallium Zinc Oxide (IGZO) RF magnetron target, InGaZnO4 (In:Ga:Zn = 1:1:1 at.%) PVD dielectric cathode disc, a-IGZO 1:1:1 (In2O3:Ga2O3:ZnO) TFT channel sputtering target
- **Purity / Grades:** 4N (99.99%) · High-Density Conductive Ceramic
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
- **Configurations:** Hot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
- **Typical Lead Time:** 10–16 business days
- **Documentation Included:** Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

### Technical Overview
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99%) · High-Density Conductive Ceramic precursor powders, our indium gallium zinc oxide (IGZO) (InGaZnO4 (In:Ga:Zn = 1:1:1 at.%), CAS Composition dependent; confirm supplier SDS) sputtering targets achieve high relative density (typically 96%–99.5% of 6.20 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

Single-phase homologous InGaZnO4 (1:1:1 atomic ratio, or custom 2:2:1) sintered targets deliver high electron mobility (>10–30 cm²/V·s) and ultra-low off-current in amorphous oxide TFTs. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering InGaZnO4 (In:Ga:Zn = 1:1:1 at.%) targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

### Nominal Properties
- **Formula & CAS #:** InGaZnO4 (In:Ga:Zn = 1:1:1 at.%) (CAS Composition dependent; confirm supplier SDS)
- **Purity Grades:** 4N (99.99%) · High-Density Conductive Ceramic
- **Bulk / Theoretical Density:** 6.20 g/cm³ (≥96%–99.5% relative density)
- **Recommended Bonding:** Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
- **Recommended Power Ramp:** RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

### Applications
- High-resolution AMOLED, Micro-LED, and flexible display backplane a-IGZO TFT channels
- Ultra-low-leakage capacitorless DRAM (2T0C) compute-in-memory transistors
- Flexible X-ray flat-panel detector and wearable biosensor readout arrays
- Neuromorphic optoelectronic synapse devices

### Buyer Specification Guide
Specify InGaZnO4 (In:Ga:Zn = 1:1:1 at.%) purity (4N (99.99%) · High-Density Conductive Ceramic), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

### Technical FAQs
- **Q: Why should indium gallium zinc oxide (IGZO) (InGaZnO4 (In:Ga:Zn = 1:1:1 at.%)) targets be indium-bonded to an OFHC copper backing plate?**
  A: As a brittle ceramic, InGaZnO4 (In:Ga:Zn = 1:1:1 at.%) develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
- **Q: What RF power conditioning procedure avoids cracking a new InGaZnO4 (In:Ga:Zn = 1:1:1 at.%) target?**
  A: Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
- **Q: Is oxygen or nitrogen reactive gas backfill needed when sputtering InGaZnO4 (In:Ga:Zn = 1:1:1 at.%)?**
  A: RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.

---
## Barium Titanate & Barium Strontium Titanate (BaTiO3 / Ba1-xSrxTiO3 (BST)) Sputtering Targets (`TB-PVD-BST`)
- **URL:** https://tensilebase.com/products/barium-strontium-titanate-bst-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=barium-strontium-titanate-bst-target
- **Category:** Thin Film Materials
- **Chemical Formula:** BaTiO3 / Ba1-xSrxTiO3 (BST) (Elements: Ba, Sr, Ti, O)
- **CAS Registry Number:** 12047-27-7
- **Synonyms:** Barium Titanate & Barium Strontium Titanate RF magnetron target, BaTiO3 / Ba1-xSrxTiO3 (BST) PVD dielectric cathode disc, BaTiO3 & Ba0.5Sr0.5TiO3 (BST) ferroelectric RF sputtering target
- **Purity / Grades:** 3N5 (99.95%) / 4N
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
- **Configurations:** Hot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
- **Typical Lead Time:** 10–16 business days
- **Documentation Included:** Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

### Technical Overview
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 3N5 (99.95%) / 4N precursor powders, our barium titanate & barium strontium titanate (BaTiO3 / Ba1-xSrxTiO3 (BST), CAS 12047-27-7) sputtering targets achieve high relative density (typically 96%–99.5% of 5.85 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

Hot-pressed perovskite BaTiO3 and tunable Ba0.5Sr0.5TiO3 / Ba0.6Sr0.4TiO3 targets enable RF deposition of high-permittivity (εr 200–1,000+) ferroelectric thin films. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering BaTiO3 / Ba1-xSrxTiO3 (BST) targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

### Nominal Properties
- **Formula & CAS #:** BaTiO3 / Ba1-xSrxTiO3 (BST) (CAS 12047-27-7)
- **Purity Grades:** 3N5 (99.95%) / 4N
- **Bulk / Theoretical Density:** 5.85 g/cm³ (≥96%–99.5% relative density)
- **Recommended Bonding:** Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
- **Recommended Power Ramp:** RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

### Applications
- Voltage-tunable microwave varactors, phase shifters, and 5G RF agile filters (BST)
- High-density thin-film decoupling capacitors and MLCC research (BaTiO3)
- Electro-optic Pockels modulators on silicon/MgO/SrTiO3 photonics platforms
- Pyroelectric uncooled IR detector arrays

### Buyer Specification Guide
Specify BaTiO3 / Ba1-xSrxTiO3 (BST) purity (3N5 (99.95%) / 4N), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

### Technical FAQs
- **Q: Why should barium titanate & barium strontium titanate (BaTiO3 / Ba1-xSrxTiO3 (BST)) targets be indium-bonded to an OFHC copper backing plate?**
  A: As a brittle ceramic, BaTiO3 / Ba1-xSrxTiO3 (BST) develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
- **Q: What RF power conditioning procedure avoids cracking a new BaTiO3 / Ba1-xSrxTiO3 (BST) target?**
  A: Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
- **Q: Is oxygen or nitrogen reactive gas backfill needed when sputtering BaTiO3 / Ba1-xSrxTiO3 (BST)?**
  A: RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.

---
## Lead Zirconate Titanate (PZT 52/48) (Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO)) Sputtering Targets (`TB-PVD-PZT`)
- **URL:** https://tensilebase.com/products/pzt-lead-zirconate-titanate-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=pzt-lead-zirconate-titanate-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO) (Elements: Pb, Zr, Ti, O)
- **CAS Registry Number:** 12626-81-2
- **Synonyms:** Lead Zirconate Titanate (PZT 52/48) RF magnetron target, Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO) PVD dielectric cathode disc, PZT 52/48 (with excess PbO) piezoelectric MEMS sputtering target
- **Purity / Grades:** 3N5 (99.95%)
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
- **Configurations:** Hot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
- **Typical Lead Time:** 10–16 business days
- **Documentation Included:** Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

### Technical Overview
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 3N5 (99.95%) precursor powders, our lead zirconate titanate (PZT 52/48) (Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO), CAS 12626-81-2) sputtering targets achieve high relative density (typically 96%–99.5% of 7.60 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

Formulated at the morphotropic phase boundary (Zr/Ti = 52/48 or Nb/La-doped PLZT) with optional 10–20 mol% excess PbO to compensate volatile lead loss during RF sputtering and annealing. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO) targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

### Nominal Properties
- **Formula & CAS #:** Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO) (CAS 12626-81-2)
- **Purity Grades:** 3N5 (99.95%)
- **Bulk / Theoretical Density:** 7.60 g/cm³ (≥96%–99.5% relative density)
- **Recommended Bonding:** Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
- **Recommended Power Ramp:** RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

### Applications
- Piezoelectric MEMS inkjet printheads, autofocus micro-mirrors, and ultrasound PMUTs
- Ferroelectric non-volatile RAM (FeRAM) and pyroelectric infrared sensors
- Vibration energy harvesters and acoustic emission MEMS sensors
- Electro-optic thin-film waveguide switches (PLZT)

### Buyer Specification Guide
Specify Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO) purity (3N5 (99.95%)), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

### Technical FAQs
- **Q: Why should lead zirconate titanate (PZT 52/48) (Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO)) targets be indium-bonded to an OFHC copper backing plate?**
  A: As a brittle ceramic, Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO) develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
- **Q: What RF power conditioning procedure avoids cracking a new Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO) target?**
  A: Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
- **Q: Is oxygen or nitrogen reactive gas backfill needed when sputtering Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO)?**
  A: RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.

---
## Solid-State Battery Targets (LiCoO2, Li3PO4, LLZO) (LiCoO2 / Li3PO4 / LiMn2O4 / Li4Ti5O12 / LLZO) Sputtering Targets (`TB-PVD-LIB`)
- **URL:** https://tensilebase.com/products/lithium-cobalt-phosphate-battery-targets/
- **Quote URL:** https://tensilebase.com/quote.html?product=lithium-cobalt-phosphate-battery-targets
- **Category:** Thin Film Materials
- **Chemical Formula:** LiCoO2 / Li3PO4 / LiMn2O4 / Li4Ti5O12 / LLZO (Elements: Li, Co, Mn, Ti, La, Zr, P, O)
- **CAS Registry Number:** 12190-79-3
- **Synonyms:** Solid-State Battery Targets (LiCoO2, Li3PO4, LLZO) RF magnetron target, LiCoO2 / Li3PO4 / LiMn2O4 / Li4Ti5O12 / LLZO PVD dielectric cathode disc, Li3PO4 (LiPON precursor), LiCoO2, & LLZO thin-film battery sputtering targets
- **Purity / Grades:** 3N5 (99.95%) / 4N (with optional 10–15% Li excess)
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
- **Configurations:** Hot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
- **Typical Lead Time:** 10–16 business days
- **Documentation Included:** Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

### Technical Overview
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 3N5 (99.95%) / 4N (with optional 10–15% Li excess) precursor powders, our Solid-State battery targets (LiCoO2, Li3PO4, LLZO) (LiCoO2 / Li3PO4 / LiMn2O4 / Li4Ti5O12 / LLZO, CAS 12190-79-3) sputtering targets achieve high relative density (typically 96%–99.5% of 3.0–5.0 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

Hot-pressed lithium cathode (LiCoO2, NMC, LiMn2O4, LiFePO4), anode (LTO), and solid electrolyte (Li3PO4 for N2-reactive LiPON, plus Al/Ta-doped LLZO) targets—available with stoichiometric or 10–20 mol% Li2O excess. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering LiCoO2 / Li3PO4 / LiMn2O4 / Li4Ti5O12 / LLZO targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

### Nominal Properties
- **Formula & CAS #:** LiCoO2 / Li3PO4 / LiMn2O4 / Li4Ti5O12 / LLZO (CAS 12190-79-3)
- **Purity Grades:** 3N5 (99.95%) / 4N (with optional 10–15% Li excess)
- **Bulk / Theoretical Density:** 3.0–5.0 g/cm³ (≥96%–99.5% relative density)
- **Recommended Bonding:** Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
- **Recommended Power Ramp:** RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

### Applications
- Reactive N2 RF sputtering of amorphous LiPON solid-state thin-film battery electrolytes (from Li3PO4 target)
- All-solid-state micro-battery LiCoO2 and LiMn2O4 cathode thin films
- Interfacial artificial SEI barrier coatings on bulk battery electrodes
- Electrochromic Li-ion storage counter-electrodes

### Buyer Specification Guide
Specify LiCoO2 / Li3PO4 / LiMn2O4 / Li4Ti5O12 / LLZO purity (3N5 (99.95%) / 4N (with optional 10–15% Li excess)), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

### Technical FAQs
- **Q: Why should Solid-State battery targets (LiCoO2, Li3PO4, LLZO) (LiCoO2 / Li3PO4 / LiMn2O4 / Li4Ti5O12 / LLZO) targets be indium-bonded to an OFHC copper backing plate?**
  A: As a brittle ceramic, LiCoO2 / Li3PO4 / LiMn2O4 / Li4Ti5O12 / LLZO develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
- **Q: What RF power conditioning procedure avoids cracking a new LiCoO2 / Li3PO4 / LiMn2O4 / Li4Ti5O12 / LLZO target?**
  A: Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
- **Q: Is oxygen or nitrogen reactive gas backfill needed when sputtering LiCoO2 / Li3PO4 / LiMn2O4 / Li4Ti5O12 / LLZO?**
  A: RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.

---
## Aluminum Nitride (AlN) Sputtering Targets (`TB-PVD-ALN`)
- **URL:** https://tensilebase.com/products/aluminum-nitride-aln-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=aluminum-nitride-aln-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** AlN (Elements: Al, N)
- **CAS Registry Number:** 24304-00-5
- **Synonyms:** Aluminum Nitride RF magnetron target, AlN PVD dielectric cathode disc, Hot-pressed 4N AlN piezoelectric & thermal RF sputtering target
- **Purity / Grades:** 3N5 (99.95%) / 4N
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
- **Configurations:** Hot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
- **Typical Lead Time:** 10–16 business days
- **Documentation Included:** Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

### Technical Overview
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 3N5 (99.95%) / 4N precursor powders, our aluminum nitride (AlN, CAS 24304-00-5) sputtering targets achieve high relative density (typically 96%–99.5% of 3.22 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

Hot-pressed binder-free AlN ceramic targets allow direct RF magnetron sputtering of piezoelectric c-axis (0002) AlN and high-thermal-conductivity dielectric films. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering AlN targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

### Nominal Properties
- **Formula & CAS #:** AlN (CAS 24304-00-5)
- **Purity Grades:** 3N5 (99.95%) / 4N
- **Bulk / Theoretical Density:** 3.22 g/cm³ (≥96%–99.5% relative density)
- **Recommended Bonding:** Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
- **Recommended Power Ramp:** RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

### Applications
- RF BAW/FBAR and SAW acoustic filter piezoelectric layers
- High-thermal-conductivity (>150 W/m·K bulk) heat-spreading dielectric passivation
- Deep-UV optoelectronic buffer layers on sapphire and SiC substrates
- High-temperature oxidation-resistant surface coatings

### Buyer Specification Guide
Specify AlN purity (3N5 (99.95%) / 4N), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

### Technical FAQs
- **Q: Why should aluminum nitride (AlN) targets be indium-bonded to an OFHC copper backing plate?**
  A: As a brittle ceramic, AlN develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
- **Q: What RF power conditioning procedure avoids cracking a new AlN target?**
  A: Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
- **Q: Is oxygen or nitrogen reactive gas backfill needed when sputtering AlN?**
  A: RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.

---
## Silicon Nitride (Si3N4) Sputtering Targets (`TB-PVD-SI3N4`)
- **URL:** https://tensilebase.com/products/silicon-nitride-si3n4-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=silicon-nitride-si3n4-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** Si3N4 (Elements: Si, N)
- **CAS Registry Number:** 12033-89-5
- **Synonyms:** Silicon Nitride RF magnetron target, Si3N4 PVD dielectric cathode disc, 4N HIP Si3N4 photonic waveguide & passivation RF sputtering target
- **Purity / Grades:** 4N (99.99%)
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
- **Configurations:** Hot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
- **Typical Lead Time:** 10–16 business days
- **Documentation Included:** Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

### Technical Overview
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99%) precursor powders, our silicon nitride (Si3N4, CAS 12033-89-5) sputtering targets achieve high relative density (typically 96%–99.5% of 3.15 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

HIP-consolidated stoichiometric Si3N4 targets provide low-hydrogen direct RF sputtering of optical waveguides, MEMS membranes, and moisture barriers without silane (SiH4) gas. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering Si3N4 targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

### Nominal Properties
- **Formula & CAS #:** Si3N4 (CAS 12033-89-5)
- **Purity Grades:** 4N (99.99%)
- **Bulk / Theoretical Density:** 3.15 g/cm³ (≥96%–99.5% relative density)
- **Recommended Bonding:** Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
- **Recommended Power Ramp:** RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

### Applications
- Ultra-low-loss integrated silicon nitride (Si3N4) photonic waveguides and ring resonators
- Hydrogen-free moisture/sodium passivation barriers for CMOS and GaN HEMTs
- Low-stress MEMS cantilever and X-ray/TEM window membranes
- Anti-reflection coatings (n ~ 2.02) and hard scratch-resistant optical layers

### Buyer Specification Guide
Specify Si3N4 purity (4N (99.99%)), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

### Technical FAQs
- **Q: Why should silicon nitride (Si3N4) targets be indium-bonded to an OFHC copper backing plate?**
  A: As a brittle ceramic, Si3N4 develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
- **Q: What RF power conditioning procedure avoids cracking a new Si3N4 target?**
  A: Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
- **Q: Is oxygen or nitrogen reactive gas backfill needed when sputtering Si3N4?**
  A: RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.

---
## Titanium Nitride (TiN) Sputtering Targets (`TB-PVD-TIN`)
- **URL:** https://tensilebase.com/products/titanium-nitride-tin-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=titanium-nitride-tin-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** TiN (Elements: Ti, N)
- **CAS Registry Number:** 25583-20-4
- **Synonyms:** Titanium Nitride RF magnetron target, TiN PVD dielectric cathode disc, Conductive 4N TiN DC/RF magnetron sputtering target
- **Purity / Grades:** 3N5 (99.95%) / 4N
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
- **Configurations:** Hot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
- **Typical Lead Time:** 10–16 business days
- **Documentation Included:** Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

### Technical Overview
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 3N5 (99.95%) / 4N precursor powders, our titanium nitride (TiN, CAS 25583-20-4) sputtering targets achieve high relative density (typically 96%–99.5% of 5.30 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

Conductive golden-brown hot-pressed TiN targets sputter directly in DC, pulsed-DC, or RF argon plasmas without reactive N2 hysteresis poisoning. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering TiN targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

### Nominal Properties
- **Formula & CAS #:** TiN (CAS 25583-20-4)
- **Purity Grades:** 3N5 (99.95%) / 4N
- **Bulk / Theoretical Density:** 5.30 g/cm³ (≥96%–99.5% relative density)
- **Recommended Bonding:** Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
- **Recommended Power Ramp:** RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

### Applications
- CMOS metal-gate work-function tuning and Cu/W diffusion barrier liners
- Refractory plasmonic metamaterials and refractory IR emitters (Au alternative)
- Superconducting TiN kinetic-inductance photon detectors (MKIDs) and qubit capacitors
- Biocompatible microelectrode neural array coatings

### Buyer Specification Guide
Specify TiN purity (3N5 (99.95%) / 4N), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

### Technical FAQs
- **Q: Why should titanium nitride (TiN) targets be indium-bonded to an OFHC copper backing plate?**
  A: As a brittle ceramic, TiN develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
- **Q: What RF power conditioning procedure avoids cracking a new TiN target?**
  A: Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
- **Q: Is oxygen or nitrogen reactive gas backfill needed when sputtering TiN?**
  A: RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.

---
## Silicon Carbide (SiC) Sputtering Targets (`TB-PVD-SIC`)
- **URL:** https://tensilebase.com/products/silicon-carbide-sic-sputtering-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=silicon-carbide-sic-sputtering-target
- **Category:** Thin Film Materials
- **Chemical Formula:** SiC (Elements: Si, C)
- **CAS Registry Number:** 409-21-2
- **Synonyms:** Silicon Carbide RF magnetron target, SiC PVD dielectric cathode disc, 4N sintered SiC RF & conductive pulsed-DC sputtering target
- **Purity / Grades:** 4N (99.99%) / 4N5
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
- **Configurations:** Hot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
- **Typical Lead Time:** 10–16 business days
- **Documentation Included:** Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

### Technical Overview
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99%) / 4N5 precursor powders, our silicon carbide (SiC, CAS 409-21-2) sputtering targets achieve high relative density (typically 96%–99.5% of 3.14 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

Available in direct-sintered RF grade and conductive nitrogen-doped / hot-pressed grades for pulsed-DC and RF deposition of ultra-hard wide-bandgap SiC films. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering SiC targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

### Nominal Properties
- **Formula & CAS #:** SiC (CAS 409-21-2)
- **Purity Grades:** 4N (99.99%) / 4N5
- **Bulk / Theoretical Density:** 3.14 g/cm³ (≥96%–99.5% relative density)
- **Recommended Bonding:** Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
- **Recommended Power Ramp:** RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

### Applications
- Extreme-UV (EUV) and synchrotron X-ray reflective mirror coatings
- Harsh-environment MEMS pressure/temperature sensor passivation
- Hard tribological diamond-like / SiC wear protection coatings
- Wide-bandgap optoelectronic and power device buffer layers

### Buyer Specification Guide
Specify SiC purity (4N (99.99%) / 4N5), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

### Technical FAQs
- **Q: Why should silicon carbide (SiC) targets be indium-bonded to an OFHC copper backing plate?**
  A: As a brittle ceramic, SiC develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
- **Q: What RF power conditioning procedure avoids cracking a new SiC target?**
  A: Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
- **Q: Is oxygen or nitrogen reactive gas backfill needed when sputtering SiC?**
  A: RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.

---
## 2D Transition-Metal Dichalcogenides (MoS2, WS2, MoSe2, WSe2) (MoS2 / WS2 / MoSe2 / WSe2) Sputtering Targets (`TB-PVD-TMD`)
- **URL:** https://tensilebase.com/products/molybdenum-tungsten-disulfide-mos2-ws2-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=molybdenum-tungsten-disulfide-mos2-ws2-target
- **Category:** Thin Film Materials
- **Chemical Formula:** MoS2 / WS2 / MoSe2 / WSe2 (Elements: Mo, W, S, Se)
- **CAS Registry Number:** 1317-33-5
- **Synonyms:** 2D Transition-Metal Dichalcogenides (MoS2, WS2, MoSe2, WSe2) RF magnetron target, MoS2 / WS2 / MoSe2 / WSe2 PVD dielectric cathode disc, 4N MoS2, WS2, MoSe2, & WSe2 2D TMD sputtering targets
- **Purity / Grades:** 4N (99.99%)
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
- **Configurations:** Hot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
- **Typical Lead Time:** 10–16 business days
- **Documentation Included:** Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

### Technical Overview
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99%) precursor powders, our 2D Transition-Metal dichalcogenides (MoS2, WS2, MoSe2, WSe2) (MoS2 / WS2 / MoSe2 / WSe2, CAS 1317-33-5) sputtering targets achieve high relative density (typically 96%–99.5% of 4.95–7.40 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

Hot-pressed high-density chalcogenide targets allow wafer-scale magnetron sputtering of 2D semiconductor layers and ultra-low-friction vacuum solid-lubricant coatings. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering MoS2 / WS2 / MoSe2 / WSe2 targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

### Nominal Properties
- **Formula & CAS #:** MoS2 / WS2 / MoSe2 / WSe2 (CAS 1317-33-5)
- **Purity Grades:** 4N (99.99%)
- **Bulk / Theoretical Density:** 4.95–7.40 g/cm³ (≥96%–99.5% relative density)
- **Recommended Bonding:** Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
- **Recommended Power Ramp:** RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

### Applications
- Wafer-scale 2D semiconductor channels (MoS2, WS2, MoSe2, WSe2) for FETs and photodetectors
- Aerospace & vacuum-mechanism ultra-low-friction solid lubricant coatings (MoS2 / WS2)
- Hydrogen evolution reaction (HER) electrocatalyst thin films
- Van der Waals heterojunction optoelectronics

### Buyer Specification Guide
Specify MoS2 / WS2 / MoSe2 / WSe2 purity (4N (99.99%)), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

### Technical FAQs
- **Q: Why should 2D Transition-Metal dichalcogenides (MoS2, WS2, MoSe2, WSe2) (MoS2 / WS2 / MoSe2 / WSe2) targets be indium-bonded to an OFHC copper backing plate?**
  A: As a brittle ceramic, MoS2 / WS2 / MoSe2 / WSe2 develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
- **Q: What RF power conditioning procedure avoids cracking a new MoS2 / WS2 / MoSe2 / WSe2 target?**
  A: Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
- **Q: Is oxygen or nitrogen reactive gas backfill needed when sputtering MoS2 / WS2 / MoSe2 / WSe2?**
  A: RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.

---
## Zinc Sulfide & Zinc Selenide (ZnS, ZnSe) (ZnS / ZnSe) Sputtering Targets (`TB-PVD-ZNS`)
- **URL:** https://tensilebase.com/products/cadmium-zinc-sulfide-zns-target/
- **Quote URL:** https://tensilebase.com/quote.html?product=cadmium-zinc-sulfide-zns-target
- **Category:** Thin Film Materials
- **Chemical Formula:** ZnS / ZnSe (Elements: Zn, S, Se)
- **CAS Registry Number:** 1314-98-3
- **Synonyms:** Zinc Sulfide & Zinc Selenide (ZnS, ZnSe) RF magnetron target, ZnS / ZnSe PVD dielectric cathode disc, 4N5 ZnS, ZnSe, & ZnS-SiO2 (80:20) IR optical sputtering target
- **Purity / Grades:** 4N5 (99.995%) / 5N CVD Optical Grade
- **Typical Dimensions:** Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
- **Configurations:** Hot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
- **Typical Lead Time:** 10–16 business days
- **Documentation Included:** Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

### Technical Overview
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N5 (99.995%) / 5N CVD Optical Grade precursor powders, our zinc sulfide & zinc selenide (ZnS, ZnSe) (ZnS / ZnSe, CAS 1314-98-3) sputtering targets achieve high relative density (typically 96%–99.5% of 4.05–5.26 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

Hot-pressed and CVD-grade ZnS and ZnSe targets deposit low-absorption infrared (1–14 µm) optical interference coatings and photovoltaic buffer layers. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering ZnS / ZnSe targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

### Nominal Properties
- **Formula & CAS #:** ZnS / ZnSe (CAS 1314-98-3)
- **Purity Grades:** 4N5 (99.995%) / 5N CVD Optical Grade
- **Bulk / Theoretical Density:** 4.05–5.26 g/cm³ (≥96%–99.5% relative density)
- **Recommended Bonding:** Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
- **Recommended Power Ramp:** RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

### Applications
- Mid-wave & long-wave infrared (MWIR / LWIR 3–12 µm) thermal imaging AR coatings
- Cadmium-free Zn(O,S) buffer layers in CIGS thin-film solar cells
- Electroluminescent phosphor host thin films
- Phase-change optical disc dielectric protection stacks (ZnS-SiO2)

### Buyer Specification Guide
Specify ZnS / ZnSe purity (4N5 (99.995%) / 5N CVD Optical Grade), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

### Technical FAQs
- **Q: Why should zinc sulfide & zinc selenide (ZnS, ZnSe) (ZnS / ZnSe) targets be indium-bonded to an OFHC copper backing plate?**
  A: As a brittle ceramic, ZnS / ZnSe develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
- **Q: What RF power conditioning procedure avoids cracking a new ZnS / ZnSe target?**
  A: Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
- **Q: Is oxygen or nitrogen reactive gas backfill needed when sputtering ZnS / ZnSe?**
  A: RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.

---
## Aluminum (Al) Evaporation Materials (`TB-EV-AL`)
- **URL:** https://tensilebase.com/products/aluminum-evaporation-pellets-wire/
- **Quote URL:** https://tensilebase.com/quote.html?product=aluminum-evaporation-pellets-wire
- **Category:** Thin Film Materials
- **Chemical Formula:** Al (Elements: Al)
- **CAS Registry Number:** 7429-90-5
- **Synonyms:** Aluminum e-beam evaporation pellets, 5N (99.999%) / 5N5 Al vacuum deposition granules & shot, PVD starter source Al
- **Purity / Grades:** 5N (99.999%) / 5N5
- **Typical Dimensions:** Ø 3×3 mm, Ø 6×6 mm, Ø 6×12 mm slugs; Ø 1–2 mm wire clips
- **Configurations:** 50 g, 100 g, 250 g, 500 g, & 1 kg vacuum-degassed sealed lots
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot COA (ICP-OES / GDMS trace metal ppm breakdown for Al) and net-weight sealed lot label.

### Technical Overview
Prepared specifically for high-vacuum electron-beam and resistive thermal evaporation, our 5N (99.999%) / 5N5 aluminum (Al, CAS 7429-90-5) deposition materials undergo vacuum degassing or high-temperature sintering to eliminate trapped volatiles and micro-voids that cause melt spitting and pinhole film defects.

Use intermetallic BN/TiB2, vitreous carbon, or Al2O3/BN e-beam crucible liners, or multi-strand twisted tungsten wire coils/boats for resistive thermal wetting. Supplied in cleanroom argon-flushed containers by weight (50 g to 1,000 g lots) or piece count, accompanied by the manufacturer's batch trace-impurity Certificate of Analysis.

### Nominal Properties
- **Formula & CAS #:** Al (CAS 7429-90-5)
- **Purity Tiers:** 5N (99.999%) / 5N5
- **Density & Melting/Sublimation:** 2.70 g/cm³ · MP/Subl. ~660 °C
- **Standard Forms:** Ø 3×3 mm, Ø 6×6 mm, Ø 6×12 mm slugs; Ø 1–2 mm wire clips
- **Recommended Liner / Boat:** Use intermetallic BN/TiB2, vitreous carbon, or Al2O3/BN e-beam crucible liners, or multi-strand twisted tungsten wire coils/boats for resistive thermal wetting

### Applications
- High-reflectivity UV-VIS-IR mirror coatings and telescope re-aluminizing
- Semiconductor CMOS/MEMS lift-off interconnects and bond pads
- OLED / organic solar cell low-work-function cathode metallization
- Barrier packaging and capacitor metallization

### Buyer Specification Guide
Specify Al purity (5N (99.999%) / 5N5), preferred pellet or granule size (Ø 3×3 mm, Ø 6×6 mm, Ø 6×12 mm slugs; Ø 1–2 mm wire clips), deposition method (e-beam hearth pocket cc volume vs. resistive W/Mo/Ta boat), and pack weight in grams.

### Technical FAQs
- **Q: Which crucible liner or boat is recommended for evaporating aluminum (Al)?**
  A: Use intermetallic BN/TiB2, vitreous carbon, or Al2O3/BN e-beam crucible liners, or multi-strand twisted tungsten wire coils/boats for resistive thermal wetting.
- **Q: How should Al evaporation granules/pellets be pre-conditioned in the chamber?**
  A: Sweep a low-power defocused e-beam or low resistive boat current across the charge behind a closed shutter until chamber base pressure recovers before ramping to deposition rate.
- **Q: What lot sizes are available for TB-EV-AL?**
  A: Standard research packs are quoted in 50 g, 100 g, 250 g, 500 g, and 1 kg sealed containers with full batch COA.

---
## Titanium (Ti) Evaporation Materials (`TB-EV-TI`)
- **URL:** https://tensilebase.com/products/titanium-evaporation-pellets/
- **Quote URL:** https://tensilebase.com/quote.html?product=titanium-evaporation-pellets
- **Category:** Thin Film Materials
- **Chemical Formula:** Ti (Elements: Ti)
- **CAS Registry Number:** 7440-32-6
- **Synonyms:** Titanium e-beam evaporation pellets, 4N5 (99.995%) / 5N (99.999%) Ti vacuum deposition granules & shot, PVD starter source Ti
- **Purity / Grades:** 4N5 (99.995%) / 5N (99.999%)
- **Typical Dimensions:** Ø 3×3 mm & Ø 6×6 mm vacuum-degassed slugs; pre-melted hearth starter cones
- **Configurations:** 50 g, 100 g, 250 g, 500 g, & 1 kg vacuum-degassed sealed lots
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot COA (ICP-OES / GDMS trace metal ppm breakdown for Ti) and net-weight sealed lot label.

### Technical Overview
Prepared specifically for high-vacuum electron-beam and resistive thermal evaporation, our 4N5 (99.995%) / 5N (99.999%) titanium (Ti, CAS 7440-32-6) deposition materials undergo vacuum degassing or high-temperature sintering to eliminate trapped volatiles and micro-voids that cause melt spitting and pinhole film defects.

Evaporate directly from water-cooled Cu e-beam hearths or Fabmate/impermeable-graphite/vitreous-carbon pocket liners, or from tungsten boats for thin adhesion layers. Supplied in cleanroom argon-flushed containers by weight (50 g to 1,000 g lots) or piece count, accompanied by the manufacturer's batch trace-impurity Certificate of Analysis.

### Nominal Properties
- **Formula & CAS #:** Ti (CAS 7440-32-6)
- **Purity Tiers:** 4N5 (99.995%) / 5N (99.999%)
- **Density & Melting/Sublimation:** 4.51 g/cm³ · MP/Subl. ~1,668 °C
- **Standard Forms:** Ø 3×3 mm & Ø 6×6 mm vacuum-degassed slugs; pre-melted hearth starter cones
- **Recommended Liner / Boat:** Evaporate directly from water-cooled Cu e-beam hearths or Fabmate/impermeable-graphite/vitreous-carbon pocket liners, or from tungsten boats for thin adhesion layers

### Applications
- Universal 2–20 nm adhesion promotion layer beneath Au, Pt, Pd, Ag, and Cu on SiO2/sapphire
- Titanium sublimation pump (TSP) getter charges for UHV chambers
- Ti/Au and Ti/Al/Ni/Au ohmic contacts on III-V and GaN wafers
- Optical TiO2 reactive ion-assisted e-beam evaporation

### Buyer Specification Guide
Specify Ti purity (4N5 (99.995%) / 5N (99.999%)), preferred pellet or granule size (Ø 3×3 mm & Ø 6×6 mm vacuum-degassed slugs; pre-melted hearth starter cones), deposition method (e-beam hearth pocket cc volume vs. resistive W/Mo/Ta boat), and pack weight in grams.

### Technical FAQs
- **Q: Which crucible liner or boat is recommended for evaporating titanium (Ti)?**
  A: Evaporate directly from water-cooled Cu e-beam hearths or Fabmate/impermeable-graphite/vitreous-carbon pocket liners, or from tungsten boats for thin adhesion layers.
- **Q: How should Ti evaporation granules/pellets be pre-conditioned in the chamber?**
  A: Sweep a low-power defocused e-beam or low resistive boat current across the charge behind a closed shutter until chamber base pressure recovers before ramping to deposition rate.
- **Q: What lot sizes are available for TB-EV-TI?**
  A: Standard research packs are quoted in 50 g, 100 g, 250 g, 500 g, and 1 kg sealed containers with full batch COA.

---
## Chromium (Cr) Evaporation Materials (`TB-EV-CR`)
- **URL:** https://tensilebase.com/products/chromium-evaporation-granules-rods/
- **Quote URL:** https://tensilebase.com/quote.html?product=chromium-evaporation-granules-rods
- **Category:** Thin Film Materials
- **Chemical Formula:** Cr (Elements: Cr)
- **CAS Registry Number:** 7440-47-3
- **Synonyms:** Chromium e-beam evaporation pellets, 4N (99.99%) / 4N5 (99.995%) Cr vacuum deposition granules & shot, PVD starter source Cr
- **Purity / Grades:** 4N (99.99%) / 4N5 (99.995%)
- **Typical Dimensions:** 1–3 mm & 2–5 mm degassed chunks/granules; Cr-plated W evaporation rods
- **Configurations:** 50 g, 100 g, 250 g, 500 g, & 1 kg vacuum-degassed sealed lots
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot COA (ICP-OES / GDMS trace metal ppm breakdown for Cr) and net-weight sealed lot label.

### Technical Overview
Prepared specifically for high-vacuum electron-beam and resistive thermal evaporation, our 4N (99.99%) / 4N5 (99.995%) chromium (Cr, CAS 7440-47-3) deposition materials undergo vacuum degassing or high-temperature sintering to eliminate trapped volatiles and micro-voids that cause melt spitting and pinhole film defects.

Chromium sublimes smoothly before melting in high vacuum; use tungsten boats, baffled tantalum boxes, or Cr-plated tungsten rods (or graphite/Cu e-beam liners). Supplied in cleanroom argon-flushed containers by weight (50 g to 1,000 g lots) or piece count, accompanied by the manufacturer's batch trace-impurity Certificate of Analysis.

### Nominal Properties
- **Formula & CAS #:** Cr (CAS 7440-47-3)
- **Purity Tiers:** 4N (99.99%) / 4N5 (99.995%)
- **Density & Melting/Sublimation:** 7.19 g/cm³ · MP/Subl. ~1,907 (Sublimes ~1,400 °C in vacuum) °C
- **Standard Forms:** 1–3 mm & 2–5 mm degassed chunks/granules; Cr-plated W evaporation rods
- **Recommended Liner / Boat:** Chromium sublimes smoothly before melting in high vacuum

### Applications
- Glass, fused quartz, and silicon wafer adhesion layers (3–15 nm Cr) under gold/copper
- Photomask and optical encoder scale chrome coatings
- Semi-transparent neutral-density beam splitters
- Corrosion-resistant metallic thin-film coatings

### Buyer Specification Guide
Specify Cr purity (4N (99.99%) / 4N5 (99.995%)), preferred pellet or granule size (1–3 mm & 2–5 mm degassed chunks/granules; Cr-plated W evaporation rods), deposition method (e-beam hearth pocket cc volume vs. resistive W/Mo/Ta boat), and pack weight in grams.

### Technical FAQs
- **Q: Which crucible liner or boat is recommended for evaporating chromium (Cr)?**
  A: Chromium sublimes smoothly before melting in high vacuum; use tungsten boats, baffled tantalum boxes, or Cr-plated tungsten rods (or graphite/Cu e-beam liners).
- **Q: How should Cr evaporation granules/pellets be pre-conditioned in the chamber?**
  A: Sweep a low-power defocused e-beam or low resistive boat current across the charge behind a closed shutter until chamber base pressure recovers before ramping to deposition rate.
- **Q: What lot sizes are available for TB-EV-CR?**
  A: Standard research packs are quoted in 50 g, 100 g, 250 g, 500 g, and 1 kg sealed containers with full batch COA.

---
## Copper (Cu) Evaporation Materials (`TB-EV-CU`)
- **URL:** https://tensilebase.com/products/copper-evaporation-pellets/
- **Quote URL:** https://tensilebase.com/quote.html?product=copper-evaporation-pellets
- **Category:** Thin Film Materials
- **Chemical Formula:** Cu (Elements: Cu)
- **CAS Registry Number:** 7440-50-8
- **Synonyms:** Copper e-beam evaporation pellets, 5N (99.999%) / 6N OFHC Cu vacuum deposition granules & shot, PVD starter source Cu
- **Purity / Grades:** 5N (99.999%) / 6N OFHC
- **Typical Dimensions:** Ø 3×3 mm & Ø 6×6 mm oxygen-free cylindrical slugs; 2–5 mm shot
- **Configurations:** 50 g, 100 g, 250 g, 500 g, & 1 kg vacuum-degassed sealed lots
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot COA (ICP-OES / GDMS trace metal ppm breakdown for Cu) and net-weight sealed lot label.

### Technical Overview
Prepared specifically for high-vacuum electron-beam and resistive thermal evaporation, our 5N (99.999%) / 6N OFHC copper (Cu, CAS 7440-50-8) deposition materials undergo vacuum degassing or high-temperature sintering to eliminate trapped volatiles and micro-voids that cause melt spitting and pinhole film defects.

Use molybdenum, graphite, vitreous carbon, or Al2O3 e-beam liners, or molybdenum/alumina-coated tungsten resistive boats. Supplied in cleanroom argon-flushed containers by weight (50 g to 1,000 g lots) or piece count, accompanied by the manufacturer's batch trace-impurity Certificate of Analysis.

### Nominal Properties
- **Formula & CAS #:** Cu (CAS 7440-50-8)
- **Purity Tiers:** 5N (99.999%) / 6N OFHC
- **Density & Melting/Sublimation:** 8.96 g/cm³ · MP/Subl. ~1,085 °C
- **Standard Forms:** Ø 3×3 mm & Ø 6×6 mm oxygen-free cylindrical slugs; 2–5 mm shot
- **Recommended Liner / Boat:** Use molybdenum, graphite, vitreous carbon, or Al2O3 e-beam liners, or molybdenum/alumina-coated tungsten resistive boats

### Applications
- Low-resistivity RF microstrip, coil, and electroplating seed layers
- High-reflectivity infrared laser mirrors and heat-spreading layers
- Superconducting quantum device thermalization pads
- Catalytic and plasmonic nanoparticle thin films

### Buyer Specification Guide
Specify Cu purity (5N (99.999%) / 6N OFHC), preferred pellet or granule size (Ø 3×3 mm & Ø 6×6 mm oxygen-free cylindrical slugs; 2–5 mm shot), deposition method (e-beam hearth pocket cc volume vs. resistive W/Mo/Ta boat), and pack weight in grams.

### Technical FAQs
- **Q: Which crucible liner or boat is recommended for evaporating copper (Cu)?**
  A: Use molybdenum, graphite, vitreous carbon, or Al2O3 e-beam liners, or molybdenum/alumina-coated tungsten resistive boats.
- **Q: How should Cu evaporation granules/pellets be pre-conditioned in the chamber?**
  A: Sweep a low-power defocused e-beam or low resistive boat current across the charge behind a closed shutter until chamber base pressure recovers before ramping to deposition rate.
- **Q: What lot sizes are available for TB-EV-CU?**
  A: Standard research packs are quoted in 50 g, 100 g, 250 g, 500 g, and 1 kg sealed containers with full batch COA.

---
## Nickel (Ni) Evaporation Materials (`TB-EV-NI`)
- **URL:** https://tensilebase.com/products/nickel-evaporation-pellets/
- **Quote URL:** https://tensilebase.com/quote.html?product=nickel-evaporation-pellets
- **Category:** Thin Film Materials
- **Chemical Formula:** Ni (Elements: Ni)
- **CAS Registry Number:** 7440-02-0
- **Synonyms:** Nickel e-beam evaporation pellets, 4N5 (99.995%) / 5N (99.999%) Ni vacuum deposition granules & shot, PVD starter source Ni
- **Purity / Grades:** 4N5 (99.995%) / 5N (99.999%)
- **Typical Dimensions:** Ø 3×3 mm & Ø 6×6 mm vacuum-degassed slugs
- **Configurations:** 50 g, 100 g, 250 g, 500 g, & 1 kg vacuum-degassed sealed lots
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot COA (ICP-OES / GDMS trace metal ppm breakdown for Ni) and net-weight sealed lot label.

### Technical Overview
Prepared specifically for high-vacuum electron-beam and resistive thermal evaporation, our 4N5 (99.995%) / 5N (99.999%) nickel (Ni, CAS 7440-02-0) deposition materials undergo vacuum degassing or high-temperature sintering to eliminate trapped volatiles and micro-voids that cause melt spitting and pinhole film defects.

Use alumina (Al2O3) or thick tungsten e-beam liners (avoid graphite liners as molten Ni dissolves carbon!), or alumina-coated tungsten resistive boats. Supplied in cleanroom argon-flushed containers by weight (50 g to 1,000 g lots) or piece count, accompanied by the manufacturer's batch trace-impurity Certificate of Analysis.

### Nominal Properties
- **Formula & CAS #:** Ni (CAS 7440-02-0)
- **Purity Tiers:** 4N5 (99.995%) / 5N (99.999%)
- **Density & Melting/Sublimation:** 8.90 g/cm³ · MP/Subl. ~1,455 °C
- **Standard Forms:** Ø 3×3 mm & Ø 6×6 mm vacuum-degassed slugs
- **Recommended Liner / Boat:** Use alumina (Al2O3) or thick tungsten e-beam liners (avoid graphite liners as molten Ni dissolves carbon!), or alumina-coated tungsten resistive boats

### Applications
- Ohmic contacts on SiC (Ni silicide) and n-GaN (Ti/Al/Ni/Au) power & RF devices
- Solderable barrier layers between Ti/Cr adhesion films and Au/Ag top finishes
- Ferromagnetic spintronic, permalloy, and magneto-optical thin films
- X-ray grazing-incidence mirror coatings

### Buyer Specification Guide
Specify Ni purity (4N5 (99.995%) / 5N (99.999%)), preferred pellet or granule size (Ø 3×3 mm & Ø 6×6 mm vacuum-degassed slugs), deposition method (e-beam hearth pocket cc volume vs. resistive W/Mo/Ta boat), and pack weight in grams.

### Technical FAQs
- **Q: Which crucible liner or boat is recommended for evaporating nickel (Ni)?**
  A: Use alumina (Al2O3) or thick tungsten e-beam liners (avoid graphite liners as molten Ni dissolves carbon!), or alumina-coated tungsten resistive boats.
- **Q: How should Ni evaporation granules/pellets be pre-conditioned in the chamber?**
  A: Sweep a low-power defocused e-beam or low resistive boat current across the charge behind a closed shutter until chamber base pressure recovers before ramping to deposition rate.
- **Q: What lot sizes are available for TB-EV-NI?**
  A: Standard research packs are quoted in 50 g, 100 g, 250 g, 500 g, and 1 kg sealed containers with full batch COA.

---
## Silver (Ag) Evaporation Materials (`TB-EV-AG`)
- **URL:** https://tensilebase.com/products/silver-evaporation-pellets/
- **Quote URL:** https://tensilebase.com/quote.html?product=silver-evaporation-pellets
- **Category:** Thin Film Materials
- **Chemical Formula:** Ag (Elements: Ag)
- **CAS Registry Number:** 7440-22-4
- **Synonyms:** Silver e-beam evaporation pellets, 4N5 (99.995%) / 5N (99.999%) Ag vacuum deposition granules & shot, PVD starter source Ag
- **Purity / Grades:** 4N5 (99.995%) / 5N (99.999%)
- **Typical Dimensions:** Ø 3×3 mm & Ø 6×6 mm slugs; 1–3 mm vacuum-melted shot
- **Configurations:** 50 g, 100 g, 250 g, 500 g, & 1 kg vacuum-degassed sealed lots
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot COA (ICP-OES / GDMS trace metal ppm breakdown for Ag) and net-weight sealed lot label.

### Technical Overview
Prepared specifically for high-vacuum electron-beam and resistive thermal evaporation, our 4N5 (99.995%) / 5N (99.999%) silver (Ag, CAS 7440-22-4) deposition materials undergo vacuum degassing or high-temperature sintering to eliminate trapped volatiles and micro-voids that cause melt spitting and pinhole film defects.

Use molybdenum, tantalum, or alumina-coated resistive boats (molten Ag wets Mo/Ta well), or graphite/vitreous-carbon/Mo e-beam pocket liners. Supplied in cleanroom argon-flushed containers by weight (50 g to 1,000 g lots) or piece count, accompanied by the manufacturer's batch trace-impurity Certificate of Analysis.

### Nominal Properties
- **Formula & CAS #:** Ag (CAS 7440-22-4)
- **Purity Tiers:** 4N5 (99.995%) / 5N (99.999%)
- **Density & Melting/Sublimation:** 10.49 g/cm³ · MP/Subl. ~961.8 °C
- **Standard Forms:** Ø 3×3 mm & Ø 6×6 mm slugs; 1–3 mm vacuum-melted shot
- **Recommended Liner / Boat:** Use molybdenum, tantalum, or alumina-coated resistive boats (molten Ag wets Mo/Ta well), or graphite/vitreous-carbon/Mo e-beam pocket liners

### Applications
- Front-surface astronomical and laser mirrors (>98% VIS-IR reflectance)
- OLED, perovskite, and organic photovoltaic top/bottom electrodes
- Surface-enhanced Raman spectroscopy (SERS) and plasmonic sensor substrates
- Low-resistance microelectronic contact pads

### Buyer Specification Guide
Specify Ag purity (4N5 (99.995%) / 5N (99.999%)), preferred pellet or granule size (Ø 3×3 mm & Ø 6×6 mm slugs; 1–3 mm vacuum-melted shot), deposition method (e-beam hearth pocket cc volume vs. resistive W/Mo/Ta boat), and pack weight in grams.

### Technical FAQs
- **Q: Which crucible liner or boat is recommended for evaporating silver (Ag)?**
  A: Use molybdenum, tantalum, or alumina-coated resistive boats (molten Ag wets Mo/Ta well), or graphite/vitreous-carbon/Mo e-beam pocket liners.
- **Q: How should Ag evaporation granules/pellets be pre-conditioned in the chamber?**
  A: Sweep a low-power defocused e-beam or low resistive boat current across the charge behind a closed shutter until chamber base pressure recovers before ramping to deposition rate.
- **Q: What lot sizes are available for TB-EV-AG?**
  A: Standard research packs are quoted in 50 g, 100 g, 250 g, 500 g, and 1 kg sealed containers with full batch COA.

---
## Germanium (Ge) Evaporation Materials (`TB-EV-GE`)
- **URL:** https://tensilebase.com/products/germanium-evaporation-granules/
- **Quote URL:** https://tensilebase.com/quote.html?product=germanium-evaporation-granules
- **Category:** Thin Film Materials
- **Chemical Formula:** Ge (Elements: Ge)
- **CAS Registry Number:** 7440-56-4
- **Synonyms:** Germanium e-beam evaporation pellets, 5N (99.999%) / 6N Zone-Refined Ge vacuum deposition granules & shot, PVD starter source Ge
- **Purity / Grades:** 5N (99.999%) / 6N Zone-Refined
- **Typical Dimensions:** 1–4 mm & 3–6 mm crystalline pieces; pre-melted hearth slugs
- **Configurations:** 50 g, 100 g, 250 g, 500 g, & 1 kg vacuum-degassed sealed lots
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot COA (ICP-OES / GDMS trace metal ppm breakdown for Ge) and net-weight sealed lot label.

### Technical Overview
Prepared specifically for high-vacuum electron-beam and resistive thermal evaporation, our 5N (99.999%) / 6N Zone-Refined germanium (Ge, CAS 7440-56-4) deposition materials undergo vacuum degassing or high-temperature sintering to eliminate trapped volatiles and micro-voids that cause melt spitting and pinhole film defects.

Use graphite, vitreous carbon, or quartz/alumina e-beam liners, or tungsten/tantalum/alumina-coated resistive boats. Supplied in cleanroom argon-flushed containers by weight (50 g to 1,000 g lots) or piece count, accompanied by the manufacturer's batch trace-impurity Certificate of Analysis.

### Nominal Properties
- **Formula & CAS #:** Ge (CAS 7440-56-4)
- **Purity Tiers:** 5N (99.999%) / 6N Zone-Refined
- **Density & Melting/Sublimation:** 5.32 g/cm³ · MP/Subl. ~938.2 °C
- **Standard Forms:** 1–4 mm & 3–6 mm crystalline pieces; pre-melted hearth slugs
- **Recommended Liner / Boat:** Use graphite, vitreous carbon, or quartz/alumina e-beam liners, or tungsten/tantalum/alumina-coated resistive boats

### Applications
- MWIR & LWIR (2–14 µm) anti-reflection and beamsplitter coatings paired with ZnS/YF3
- AuGeNi alloy ohmic contact evaporation on n-type GaAs wafers
- High-index NIR/SWIR photonic layers and photodetectors
- Smooth 1–2 nm wetting seed layers for ultra-thin optically transparent Ag/Au films

### Buyer Specification Guide
Specify Ge purity (5N (99.999%) / 6N Zone-Refined), preferred pellet or granule size (1–4 mm & 3–6 mm crystalline pieces; pre-melted hearth slugs), deposition method (e-beam hearth pocket cc volume vs. resistive W/Mo/Ta boat), and pack weight in grams.

### Technical FAQs
- **Q: Which crucible liner or boat is recommended for evaporating germanium (Ge)?**
  A: Use graphite, vitreous carbon, or quartz/alumina e-beam liners, or tungsten/tantalum/alumina-coated resistive boats.
- **Q: How should Ge evaporation granules/pellets be pre-conditioned in the chamber?**
  A: Sweep a low-power defocused e-beam or low resistive boat current across the charge behind a closed shutter until chamber base pressure recovers before ramping to deposition rate.
- **Q: What lot sizes are available for TB-EV-GE?**
  A: Standard research packs are quoted in 50 g, 100 g, 250 g, 500 g, and 1 kg sealed containers with full batch COA.

---
## Silicon Monoxide (SiO) Evaporation Materials (`TB-EV-SIO`)
- **URL:** https://tensilebase.com/products/silicon-monoxide-sio-evaporation-pieces/
- **Quote URL:** https://tensilebase.com/quote.html?product=silicon-monoxide-sio-evaporation-pieces
- **Category:** Thin Film Materials
- **Chemical Formula:** SiO (Elements: Si, O)
- **CAS Registry Number:** 10097-28-6
- **Synonyms:** Silicon Monoxide e-beam evaporation pellets, 4N (99.99%) Vacuum-Sublimed Grade SiO vacuum deposition granules & shot, PVD starter source SiO
- **Purity / Grades:** 4N (99.99%) Vacuum-Sublimed Grade
- **Typical Dimensions:** 2–6 mm dark brown/black vacuum-degassed chunks & granules
- **Configurations:** 50 g, 100 g, 250 g, 500 g, & 1 kg vacuum-degassed sealed lots
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot COA (ICP-OES / GDMS trace metal ppm breakdown for SiO) and net-weight sealed lot label.

### Technical Overview
Prepared specifically for high-vacuum electron-beam and resistive thermal evaporation, our 4N (99.99%) Vacuum-Sublimed Grade silicon monoxide (SiO, CAS 10097-28-6) deposition materials undergo vacuum degassing or high-temperature sintering to eliminate trapped volatiles and micro-voids that cause melt spitting and pinhole film defects.

SiO sublimes without melting; always use a baffled tantalum or molybdenum box boat (chimney source) to eliminate particle spitting during resistive evaporation. Supplied in cleanroom argon-flushed containers by weight (50 g to 1,000 g lots) or piece count, accompanied by the manufacturer's batch trace-impurity Certificate of Analysis.

### Nominal Properties
- **Formula & CAS #:** SiO (CAS 10097-28-6)
- **Purity Tiers:** 4N (99.99%) Vacuum-Sublimed Grade
- **Density & Melting/Sublimation:** 2.13 g/cm³ · MP/Subl. ~Sublimes ~1,200–1,350 °C °C
- **Standard Forms:** 2–6 mm dark brown/black vacuum-degassed chunks & granules
- **Recommended Liner / Boat:** SiO sublimes without melting

### Applications
- Protective overcoat on front-surface aluminum mirrors (oxidizes to durable SiOx/SiO2)
- Dielectric insulating crossovers and Josephson junction window isolation
- Optical interference layers (n ~ 1.55–1.95 tunable with O2 partial pressure)
- Barrier layers on flexible polymer packaging films

### Buyer Specification Guide
Specify SiO purity (4N (99.99%) Vacuum-Sublimed Grade), preferred pellet or granule size (2–6 mm dark brown/black vacuum-degassed chunks & granules), deposition method (e-beam hearth pocket cc volume vs. resistive W/Mo/Ta boat), and pack weight in grams.

### Technical FAQs
- **Q: Which crucible liner or boat is recommended for evaporating silicon monoxide (SiO)?**
  A: SiO sublimes without melting; always use a baffled tantalum or molybdenum box boat (chimney source) to eliminate particle spitting during resistive evaporation.
- **Q: How should SiO evaporation granules/pellets be pre-conditioned in the chamber?**
  A: Sweep a low-power defocused e-beam or low resistive boat current across the charge behind a closed shutter until chamber base pressure recovers before ramping to deposition rate.
- **Q: What lot sizes are available for TB-EV-SIO?**
  A: Standard research packs are quoted in 50 g, 100 g, 250 g, 500 g, and 1 kg sealed containers with full batch COA.

---
## Silicon Dioxide (Optical Quartz) (SiO2) Evaporation Materials (`TB-EV-SIO2`)
- **URL:** https://tensilebase.com/products/silicon-dioxide-sio2-evaporation-granules/
- **Quote URL:** https://tensilebase.com/quote.html?product=silicon-dioxide-sio2-evaporation-granules
- **Category:** Thin Film Materials
- **Chemical Formula:** SiO2 (Elements: Si, O)
- **CAS Registry Number:** 60676-86-0
- **Synonyms:** Silicon Dioxide (Optical Quartz) e-beam evaporation pellets, 4N5 (99.995%) / 5N SiO2 vacuum deposition granules & shot, PVD starter source SiO2
- **Purity / Grades:** 4N5 (99.995%) / 5N
- **Typical Dimensions:** 1–3 mm & 2–5 mm crystal-clear fused quartz granules; e-beam starter discs
- **Configurations:** 50 g, 100 g, 250 g, 500 g, & 1 kg vacuum-degassed sealed lots
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot COA (ICP-OES / GDMS trace metal ppm breakdown for SiO2) and net-weight sealed lot label.

### Technical Overview
Prepared specifically for high-vacuum electron-beam and resistive thermal evaporation, our 4N5 (99.995%) / 5N silicon dioxide (optical quartz) (SiO2, CAS 60676-86-0) deposition materials undergo vacuum degassing or high-temperature sintering to eliminate trapped volatiles and micro-voids that cause melt spitting and pinhole film defects.

Evaporate via electron-beam gun directly from a water-cooled copper hearth or molybdenum/graphite liner using a continuously swept defocused beam (SiO2 sublimes/melts locally). Supplied in cleanroom argon-flushed containers by weight (50 g to 1,000 g lots) or piece count, accompanied by the manufacturer's batch trace-impurity Certificate of Analysis.

### Nominal Properties
- **Formula & CAS #:** SiO2 (CAS 60676-86-0)
- **Purity Tiers:** 4N5 (99.995%) / 5N
- **Density & Melting/Sublimation:** 2.20 g/cm³ · MP/Subl. ~1,713 °C
- **Standard Forms:** 1–3 mm & 2–5 mm crystal-clear fused quartz granules; e-beam starter discs
- **Recommended Liner / Boat:** Evaporate via electron-beam gun directly from a water-cooled copper hearth or molybdenum/graphite liner using a continuously swept defocused beam (SiO2 sublimes/melts locally)

### Applications
- Universal low-refractive-index (n ~ 1.46) layer in UV/VIS/NIR optical interference coatings
- Multi-layer dielectric laser mirrors, bandpass filters, and AR coatings (paired with TiO2/Ta2O5/HfO2)
- Hermetic protective overcoats on optics and microelectronic sensors
- Gate/passivation oxides via ion-assisted e-beam deposition (IAD)

### Buyer Specification Guide
Specify SiO2 purity (4N5 (99.995%) / 5N), preferred pellet or granule size (1–3 mm & 2–5 mm crystal-clear fused quartz granules; e-beam starter discs), deposition method (e-beam hearth pocket cc volume vs. resistive W/Mo/Ta boat), and pack weight in grams.

### Technical FAQs
- **Q: Which crucible liner or boat is recommended for evaporating silicon dioxide (optical quartz) (SiO2)?**
  A: Evaporate via electron-beam gun directly from a water-cooled copper hearth or molybdenum/graphite liner using a continuously swept defocused beam (SiO2 sublimes/melts locally).
- **Q: How should SiO2 evaporation granules/pellets be pre-conditioned in the chamber?**
  A: Sweep a low-power defocused e-beam or low resistive boat current across the charge behind a closed shutter until chamber base pressure recovers before ramping to deposition rate.
- **Q: What lot sizes are available for TB-EV-SIO2?**
  A: Standard research packs are quoted in 50 g, 100 g, 250 g, 500 g, and 1 kg sealed containers with full batch COA.

---
## Magnesium Fluoride (MgF2) Evaporation Materials (`TB-EV-MGF2`)
- **URL:** https://tensilebase.com/products/magnesium-fluoride-mgf2-evaporation-granules/
- **Quote URL:** https://tensilebase.com/quote.html?product=magnesium-fluoride-mgf2-evaporation-granules
- **Category:** Thin Film Materials
- **Chemical Formula:** MgF2 (Elements: Mg, F)
- **CAS Registry Number:** 7783-40-6
- **Synonyms:** Magnesium Fluoride e-beam evaporation pellets, 4N5 (99.995%) Vacuum-Grown Crystal Optical Grade MgF2 vacuum deposition granules & shot, PVD starter source MgF2
- **Purity / Grades:** 4N5 (99.995%) Vacuum-Grown Crystal Optical Grade
- **Typical Dimensions:** 1–3 mm & 2–4 mm vacuum-melted crystalline granules
- **Configurations:** 50 g, 100 g, 250 g, 500 g, & 1 kg vacuum-degassed sealed lots
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot COA (ICP-OES / GDMS trace metal ppm breakdown for MgF2) and net-weight sealed lot label.

### Technical Overview
Prepared specifically for high-vacuum electron-beam and resistive thermal evaporation, our 4N5 (99.995%) Vacuum-Grown Crystal Optical Grade magnesium fluoride (MgF2, CAS 7783-40-6) deposition materials undergo vacuum degassing or high-temperature sintering to eliminate trapped volatiles and micro-voids that cause melt spitting and pinhole film defects.

Evaporates cleanly from molybdenum or tantalum resistive boats as well as molybdenum/graphite e-beam pocket liners with minimal dissociation. Supplied in cleanroom argon-flushed containers by weight (50 g to 1,000 g lots) or piece count, accompanied by the manufacturer's batch trace-impurity Certificate of Analysis.

### Nominal Properties
- **Formula & CAS #:** MgF2 (CAS 7783-40-6)
- **Purity Tiers:** 4N5 (99.995%) Vacuum-Grown Crystal Optical Grade
- **Density & Melting/Sublimation:** 3.18 g/cm³ · MP/Subl. ~1,263 °C
- **Standard Forms:** 1–3 mm & 2–4 mm vacuum-melted crystalline granules
- **Recommended Liner / Boat:** Evaporates cleanly from molybdenum or tantalum resistive boats as well as molybdenum/graphite e-beam pocket liners with minimal dissociation

### Applications
- Single-layer quarter-wave V-coat and broadband multi-layer anti-reflection (AR) lens coatings (n ~ 1.38)
- Deep-UV (120–250 nm) to mid-IR (7 µm) low-index optical interference stacks
- Protective enhancement overcoat on UV aluminum mirrors (Al + MgF2)
- Ophthalmic, camera, and binocular lens production coaters

### Buyer Specification Guide
Specify MgF2 purity (4N5 (99.995%) Vacuum-Grown Crystal Optical Grade), preferred pellet or granule size (1–3 mm & 2–4 mm vacuum-melted crystalline granules), deposition method (e-beam hearth pocket cc volume vs. resistive W/Mo/Ta boat), and pack weight in grams.

### Technical FAQs
- **Q: Which crucible liner or boat is recommended for evaporating magnesium fluoride (MgF2)?**
  A: Evaporates cleanly from molybdenum or tantalum resistive boats as well as molybdenum/graphite e-beam pocket liners with minimal dissociation.
- **Q: How should MgF2 evaporation granules/pellets be pre-conditioned in the chamber?**
  A: Sweep a low-power defocused e-beam or low resistive boat current across the charge behind a closed shutter until chamber base pressure recovers before ramping to deposition rate.
- **Q: What lot sizes are available for TB-EV-MGF2?**
  A: Standard research packs are quoted in 50 g, 100 g, 250 g, 500 g, and 1 kg sealed containers with full batch COA.

---
## Titanium Sub-Oxide (Ti3O5 & TiO2) (Ti3O5 / TiO2) Evaporation Materials (`TB-EV-TI3O5`)
- **URL:** https://tensilebase.com/products/titanium-oxide-ti3o5-tio2-evaporation-tablets/
- **Quote URL:** https://tensilebase.com/quote.html?product=titanium-oxide-ti3o5-tio2-evaporation-tablets
- **Category:** Thin Film Materials
- **Chemical Formula:** Ti3O5 / TiO2 (Elements: Ti, O)
- **CAS Registry Number:** 12065-65-5
- **Synonyms:** Titanium Sub-Oxide (Ti3O5 & TiO2) e-beam evaporation pellets, 4N (99.99%) Pre-Reduced Spit-Free Optical Grade Ti3O5 / TiO2 vacuum deposition granules & shot, PVD starter source Ti3O5 / TiO2
- **Purity / Grades:** 4N (99.99%) Pre-Reduced Spit-Free Optical Grade
- **Typical Dimensions:** 1–3 mm & 2–4 mm black sintered granules; Ø 10–20 mm vacuum-sintered tablets
- **Configurations:** 50 g, 100 g, 250 g, 500 g, & 1 kg vacuum-degassed sealed lots
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot COA (ICP-OES / GDMS trace metal ppm breakdown for Ti3O5 / TiO2) and net-weight sealed lot label.

### Technical Overview
Prepared specifically for high-vacuum electron-beam and resistive thermal evaporation, our 4N (99.99%) Pre-Reduced Spit-Free Optical Grade titanium Sub-Oxide (Ti3O5 & TiO2) (Ti3O5 / TiO2, CAS 12065-65-5) deposition materials undergo vacuum degassing or high-temperature sintering to eliminate trapped volatiles and micro-voids that cause melt spitting and pinhole film defects.

Pre-reduced black Ti3O5 melts congruently without oxygen bursts (unlike white TiO2); evaporate from Cu hearths or Mo/Ta/Cu e-beam liners with ~1–2 × 10⁻⁴ Torr O2 backfill. Supplied in cleanroom argon-flushed containers by weight (50 g to 1,000 g lots) or piece count, accompanied by the manufacturer's batch trace-impurity Certificate of Analysis.

### Nominal Properties
- **Formula & CAS #:** Ti3O5 / TiO2 (CAS 12065-65-5)
- **Purity Tiers:** 4N (99.99%) Pre-Reduced Spit-Free Optical Grade
- **Density & Melting/Sublimation:** 4.20 g/cm³ · MP/Subl. ~1,775 °C
- **Standard Forms:** 1–3 mm & 2–4 mm black sintered granules; Ø 10–20 mm vacuum-sintered tablets
- **Recommended Liner / Boat:** Pre-reduced black Ti3O5 melts congruently without oxygen bursts (unlike white TiO2)

### Applications
- High-refractive-index (n ~ 2.35–2.45) visible & NIR optical interference filters
- Broadband anti-reflection coatings, dichroic beam splitters, and cold mirrors
- Ion-assisted e-beam deposition (IAD) of dense shift-free optical coatings
- Photocatalytic and high-index waveguide layers

### Buyer Specification Guide
Specify Ti3O5 / TiO2 purity (4N (99.99%) Pre-Reduced Spit-Free Optical Grade), preferred pellet or granule size (1–3 mm & 2–4 mm black sintered granules; Ø 10–20 mm vacuum-sintered tablets), deposition method (e-beam hearth pocket cc volume vs. resistive W/Mo/Ta boat), and pack weight in grams.

### Technical FAQs
- **Q: Which crucible liner or boat is recommended for evaporating titanium Sub-Oxide (Ti3O5 & TiO2) (Ti3O5 / TiO2)?**
  A: Pre-reduced black Ti3O5 melts congruently without oxygen bursts (unlike white TiO2); evaporate from Cu hearths or Mo/Ta/Cu e-beam liners with ~1–2 × 10⁻⁴ Torr O2 backfill.
- **Q: How should Ti3O5 / TiO2 evaporation granules/pellets be pre-conditioned in the chamber?**
  A: Sweep a low-power defocused e-beam or low resistive boat current across the charge behind a closed shutter until chamber base pressure recovers before ramping to deposition rate.
- **Q: What lot sizes are available for TB-EV-TI3O5?**
  A: Standard research packs are quoted in 50 g, 100 g, 250 g, 500 g, and 1 kg sealed containers with full batch COA.

---
## Tantalum Pentoxide (Ta2O5) Evaporation Materials (`TB-EV-TA2O5`)
- **URL:** https://tensilebase.com/products/tantalum-pentoxide-ta2o5-evaporation-granules/
- **Quote URL:** https://tensilebase.com/quote.html?product=tantalum-pentoxide-ta2o5-evaporation-granules
- **Category:** Thin Film Materials
- **Chemical Formula:** Ta2O5 (Elements: Ta, O)
- **CAS Registry Number:** 1314-61-0
- **Synonyms:** Tantalum Pentoxide e-beam evaporation pellets, 4N (99.99%) / 4N5 Vacuum-Sintered Ta2O5 vacuum deposition granules & shot, PVD starter source Ta2O5
- **Purity / Grades:** 4N (99.99%) / 4N5 Vacuum-Sintered
- **Typical Dimensions:** 1–3 mm & 2–4 mm sintered granules & tablets (white or pre-reduced dark grade)
- **Configurations:** 50 g, 100 g, 250 g, 500 g, & 1 kg vacuum-degassed sealed lots
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot COA (ICP-OES / GDMS trace metal ppm breakdown for Ta2O5) and net-weight sealed lot label.

### Technical Overview
Prepared specifically for high-vacuum electron-beam and resistive thermal evaporation, our 4N (99.99%) / 4N5 Vacuum-Sintered tantalum pentoxide (Ta2O5, CAS 1314-61-0) deposition materials undergo vacuum degassing or high-temperature sintering to eliminate trapped volatiles and micro-voids that cause melt spitting and pinhole film defects.

Evaporate via e-beam from molybdenum, tungsten, or water-cooled copper pockets with controlled O2 backfill (or ion-assist) to maintain full optical transparency. Supplied in cleanroom argon-flushed containers by weight (50 g to 1,000 g lots) or piece count, accompanied by the manufacturer's batch trace-impurity Certificate of Analysis.

### Nominal Properties
- **Formula & CAS #:** Ta2O5 (CAS 1314-61-0)
- **Purity Tiers:** 4N (99.99%) / 4N5 Vacuum-Sintered
- **Density & Melting/Sublimation:** 8.20 g/cm³ · MP/Subl. ~1,872 °C
- **Standard Forms:** 1–3 mm & 2–4 mm sintered granules & tablets (white or pre-reduced dark grade)
- **Recommended Liner / Boat:** Evaporate via e-beam from molybdenum, tungsten, or water-cooled copper pockets with controlled O2 backfill (or ion-assist) to maintain full optical transparency

### Applications
- Low-absorption high-index (n ~ 2.10–2.15) interference filters from 300 nm to 2,000 nm
- High-power NIR laser mirrors and narrow-bandpass telecom filters
- High-k gate and capacitor dielectric films
- Anti-reflection coatings on silicon detectors

### Buyer Specification Guide
Specify Ta2O5 purity (4N (99.99%) / 4N5 Vacuum-Sintered), preferred pellet or granule size (1–3 mm & 2–4 mm sintered granules & tablets (white or pre-reduced dark grade)), deposition method (e-beam hearth pocket cc volume vs. resistive W/Mo/Ta boat), and pack weight in grams.

### Technical FAQs
- **Q: Which crucible liner or boat is recommended for evaporating tantalum pentoxide (Ta2O5)?**
  A: Evaporate via e-beam from molybdenum, tungsten, or water-cooled copper pockets with controlled O2 backfill (or ion-assist) to maintain full optical transparency.
- **Q: How should Ta2O5 evaporation granules/pellets be pre-conditioned in the chamber?**
  A: Sweep a low-power defocused e-beam or low resistive boat current across the charge behind a closed shutter until chamber base pressure recovers before ramping to deposition rate.
- **Q: What lot sizes are available for TB-EV-TA2O5?**
  A: Standard research packs are quoted in 50 g, 100 g, 250 g, 500 g, and 1 kg sealed containers with full batch COA.

---
## Hafnium Dioxide (HfO2) Evaporation Materials (`TB-EV-HFO2`)
- **URL:** https://tensilebase.com/products/hafnium-oxide-hfo2-evaporation-granules/
- **Quote URL:** https://tensilebase.com/quote.html?product=hafnium-oxide-hfo2-evaporation-granules
- **Category:** Thin Film Materials
- **Chemical Formula:** HfO2 (Elements: Hf, O)
- **CAS Registry Number:** 12055-23-1
- **Synonyms:** Hafnium Dioxide e-beam evaporation pellets, 4N (99.99% excl. Zr) / 4N5 Low-Zr Laser Grade HfO2 vacuum deposition granules & shot, PVD starter source HfO2
- **Purity / Grades:** 4N (99.99% excl. Zr) / 4N5 Low-Zr Laser Grade
- **Typical Dimensions:** 1–3 mm & 1–4 mm high-density sintered granules and tablets
- **Configurations:** 50 g, 100 g, 250 g, 500 g, & 1 kg vacuum-degassed sealed lots
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot COA (ICP-OES / GDMS trace metal ppm breakdown for HfO2) and net-weight sealed lot label.

### Technical Overview
Prepared specifically for high-vacuum electron-beam and resistive thermal evaporation, our 4N (99.99% excl. Zr) / 4N5 Low-Zr Laser Grade hafnium dioxide (HfO2, CAS 12055-23-1) deposition materials undergo vacuum degassing or high-temperature sintering to eliminate trapped volatiles and micro-voids that cause melt spitting and pinhole film defects.

Evaporates directly by electron beam from a water-cooled copper hearth or molybdenum liner with O2 backfill; does not melt fully before subliming/evaporating smoothly. Supplied in cleanroom argon-flushed containers by weight (50 g to 1,000 g lots) or piece count, accompanied by the manufacturer's batch trace-impurity Certificate of Analysis.

### Nominal Properties
- **Formula & CAS #:** HfO2 (CAS 12055-23-1)
- **Purity Tiers:** 4N (99.99% excl. Zr) / 4N5 Low-Zr Laser Grade
- **Density & Melting/Sublimation:** 9.68 g/cm³ · MP/Subl. ~2,758 °C
- **Standard Forms:** 1–3 mm & 1–4 mm high-density sintered granules and tablets
- **Recommended Liner / Boat:** Evaporates directly by electron beam from a water-cooled copper hearth or molybdenum liner with O2 backfill

### Applications
- High-LIDT UV (248/355 nm) and 1,064 nm Nd:YAG high-power laser mirror coatings (n ~ 1.95–2.05)
- Deep-UV to mid-IR broadband anti-reflection and beamsplitter stacks
- High-k dielectric insulation layers
- Protective optical coatings for space and defense optics

### Buyer Specification Guide
Specify HfO2 purity (4N (99.99% excl. Zr) / 4N5 Low-Zr Laser Grade), preferred pellet or granule size (1–3 mm & 1–4 mm high-density sintered granules and tablets), deposition method (e-beam hearth pocket cc volume vs. resistive W/Mo/Ta boat), and pack weight in grams.

### Technical FAQs
- **Q: Which crucible liner or boat is recommended for evaporating hafnium dioxide (HfO2)?**
  A: Evaporates directly by electron beam from a water-cooled copper hearth or molybdenum liner with O2 backfill; does not melt fully before subliming/evaporating smoothly.
- **Q: How should HfO2 evaporation granules/pellets be pre-conditioned in the chamber?**
  A: Sweep a low-power defocused e-beam or low resistive boat current across the charge behind a closed shutter until chamber base pressure recovers before ramping to deposition rate.
- **Q: What lot sizes are available for TB-EV-HFO2?**
  A: Standard research packs are quoted in 50 g, 100 g, 250 g, 500 g, and 1 kg sealed containers with full batch COA.

---
## Zirconium Dioxide (ZrO2) Evaporation Materials (`TB-EV-ZRO2`)
- **URL:** https://tensilebase.com/products/zirconium-oxide-zro2-evaporation-tablets/
- **Quote URL:** https://tensilebase.com/quote.html?product=zirconium-oxide-zro2-evaporation-tablets
- **Category:** Thin Film Materials
- **Chemical Formula:** ZrO2 (Elements: Zr, O)
- **CAS Registry Number:** 1314-23-4
- **Synonyms:** Zirconium Dioxide e-beam evaporation pellets, 4N (99.99%) Optical Grade (Pure or Y2O3/TiO2-Stabilized) ZrO2 vacuum deposition granules & shot, PVD starter source ZrO2
- **Purity / Grades:** 4N (99.99%) Optical Grade (Pure or Y2O3/TiO2-Stabilized)
- **Typical Dimensions:** 1–4 mm sintered granules and tablets
- **Configurations:** 50 g, 100 g, 250 g, 500 g, & 1 kg vacuum-degassed sealed lots
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot COA (ICP-OES / GDMS trace metal ppm breakdown for ZrO2) and net-weight sealed lot label.

### Technical Overview
Prepared specifically for high-vacuum electron-beam and resistive thermal evaporation, our 4N (99.99%) Optical Grade (Pure or Y2O3/TiO2-Stabilized) zirconium dioxide (ZrO2, CAS 1314-23-4) deposition materials undergo vacuum degassing or high-temperature sintering to eliminate trapped volatiles and micro-voids that cause melt spitting and pinhole film defects.

Evaporate by e-beam from copper hearths or molybdenum/tungsten liners with oxygen backfill; stabilized grades suppress phase-transition spitting during heating. Supplied in cleanroom argon-flushed containers by weight (50 g to 1,000 g lots) or piece count, accompanied by the manufacturer's batch trace-impurity Certificate of Analysis.

### Nominal Properties
- **Formula & CAS #:** ZrO2 (CAS 1314-23-4)
- **Purity Tiers:** 4N (99.99%) Optical Grade (Pure or Y2O3/TiO2-Stabilized)
- **Density & Melting/Sublimation:** 5.68 g/cm³ · MP/Subl. ~2,715 °C
- **Standard Forms:** 1–4 mm sintered granules and tablets
- **Recommended Liner / Boat:** Evaporate by e-beam from copper hearths or molybdenum/tungsten liners with oxygen backfill

### Applications
- High-index (n ~ 2.05) UV-VIS-NIR optical coatings and eyeglasses AR stacks
- Protective wear and environmental barrier coatings on glass optics
- Thermal barrier and solid-electrolyte research films
- Laser facet passivation layers

### Buyer Specification Guide
Specify ZrO2 purity (4N (99.99%) Optical Grade (Pure or Y2O3/TiO2-Stabilized)), preferred pellet or granule size (1–4 mm sintered granules and tablets), deposition method (e-beam hearth pocket cc volume vs. resistive W/Mo/Ta boat), and pack weight in grams.

### Technical FAQs
- **Q: Which crucible liner or boat is recommended for evaporating zirconium dioxide (ZrO2)?**
  A: Evaporate by e-beam from copper hearths or molybdenum/tungsten liners with oxygen backfill; stabilized grades suppress phase-transition spitting during heating.
- **Q: How should ZrO2 evaporation granules/pellets be pre-conditioned in the chamber?**
  A: Sweep a low-power defocused e-beam or low resistive boat current across the charge behind a closed shutter until chamber base pressure recovers before ramping to deposition rate.
- **Q: What lot sizes are available for TB-EV-ZRO2?**
  A: Standard research packs are quoted in 50 g, 100 g, 250 g, 500 g, and 1 kg sealed containers with full batch COA.

---
## Aluminum Oxide (Sapphire Granules) (Al2O3) Evaporation Materials (`TB-EV-AL2O3`)
- **URL:** https://tensilebase.com/products/aluminum-oxide-al2o3-evaporation-granules/
- **Quote URL:** https://tensilebase.com/quote.html?product=aluminum-oxide-al2o3-evaporation-granules
- **Category:** Thin Film Materials
- **Chemical Formula:** Al2O3 (Elements: Al, O)
- **CAS Registry Number:** 1344-28-1
- **Synonyms:** Aluminum Oxide (Sapphire Granules) e-beam evaporation pellets, 4N5 (99.995%) Crushed Single-Crystal Sapphire & Sintered Tablets Al2O3 vacuum deposition granules & shot, PVD starter source Al2O3
- **Purity / Grades:** 4N5 (99.995%) Crushed Single-Crystal Sapphire & Sintered Tablets
- **Typical Dimensions:** 1–3 mm & 2–5 mm crushed crystal sapphire granules; sintered e-beam tablets
- **Configurations:** 50 g, 100 g, 250 g, 500 g, & 1 kg vacuum-degassed sealed lots
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot COA (ICP-OES / GDMS trace metal ppm breakdown for Al2O3) and net-weight sealed lot label.

### Technical Overview
Prepared specifically for high-vacuum electron-beam and resistive thermal evaporation, our 4N5 (99.995%) Crushed Single-Crystal Sapphire & Sintered Tablets aluminum oxide (sapphire granules) (Al2O3, CAS 1344-28-1) deposition materials undergo vacuum degassing or high-temperature sintering to eliminate trapped volatiles and micro-voids that cause melt spitting and pinhole film defects.

Crushed monocrystalline sapphire granules contain zero trapped binder pores, melting cleanly in tungsten, molybdenum, or water-cooled Cu e-beam hearths. Supplied in cleanroom argon-flushed containers by weight (50 g to 1,000 g lots) or piece count, accompanied by the manufacturer's batch trace-impurity Certificate of Analysis.

### Nominal Properties
- **Formula & CAS #:** Al2O3 (CAS 1344-28-1)
- **Purity Tiers:** 4N5 (99.995%) Crushed Single-Crystal Sapphire & Sintered Tablets
- **Density & Melting/Sublimation:** 3.95 g/cm³ · MP/Subl. ~2,050 °C
- **Standard Forms:** 1–3 mm & 2–5 mm crushed crystal sapphire granules; sintered e-beam tablets
- **Recommended Liner / Boat:** Crushed monocrystalline sapphire granules contain zero trapped binder pores, melting cleanly in tungsten, molybdenum, or water-cooled Cu e-beam hearths

### Applications
- Medium-index (n ~ 1.63) UV-to-MWIR three-layer broadband anti-reflection coatings
- Moisture barrier and electrical insulation overcoats on sensors and III-V lasers
- Protective topcoat over silver and aluminum optical mirrors
- Tunnel barrier and gate oxide thin-film research

### Buyer Specification Guide
Specify Al2O3 purity (4N5 (99.995%) Crushed Single-Crystal Sapphire & Sintered Tablets), preferred pellet or granule size (1–3 mm & 2–5 mm crushed crystal sapphire granules; sintered e-beam tablets), deposition method (e-beam hearth pocket cc volume vs. resistive W/Mo/Ta boat), and pack weight in grams.

### Technical FAQs
- **Q: Which crucible liner or boat is recommended for evaporating aluminum oxide (sapphire granules) (Al2O3)?**
  A: Crushed monocrystalline sapphire granules contain zero trapped binder pores, melting cleanly in tungsten, molybdenum, or water-cooled Cu e-beam hearths.
- **Q: How should Al2O3 evaporation granules/pellets be pre-conditioned in the chamber?**
  A: Sweep a low-power defocused e-beam or low resistive boat current across the charge behind a closed shutter until chamber base pressure recovers before ramping to deposition rate.
- **Q: What lot sizes are available for TB-EV-AL2O3?**
  A: Standard research packs are quoted in 50 g, 100 g, 250 g, 500 g, and 1 kg sealed containers with full batch COA.

---
## Indium & Tin (In / Sn) Evaporation Materials (`TB-EV-INSN`)
- **URL:** https://tensilebase.com/products/indium-tin-evaporation-pellets/
- **Quote URL:** https://tensilebase.com/quote.html?product=indium-tin-evaporation-pellets
- **Category:** Thin Film Materials
- **Chemical Formula:** In / Sn (Elements: In, Sn)
- **CAS Registry Number:** 7440-74-6
- **Synonyms:** Indium & Tin e-beam evaporation pellets, 5N (99.999%) / 6N In / Sn vacuum deposition granules & shot, PVD starter source In / Sn
- **Purity / Grades:** 5N (99.999%) / 6N
- **Typical Dimensions:** Ø 3×3 mm & Ø 6×6 mm high-purity pellets and shot
- **Configurations:** 50 g, 100 g, 250 g, 500 g, & 1 kg vacuum-degassed sealed lots
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot COA (ICP-OES / GDMS trace metal ppm breakdown for In / Sn) and net-weight sealed lot label.

### Technical Overview
Prepared specifically for high-vacuum electron-beam and resistive thermal evaporation, our 5N (99.999%) / 6N indium & tin (In / Sn, CAS 7440-74-6) deposition materials undergo vacuum degassing or high-temperature sintering to eliminate trapped volatiles and micro-voids that cause melt spitting and pinhole film defects.

Evaporates easily from molybdenum, tantalum, or alumina-coated tungsten resistive boats, or from graphite/vitreous-carbon/Al2O3 e-beam liners at low power. Supplied in cleanroom argon-flushed containers by weight (50 g to 1,000 g lots) or piece count, accompanied by the manufacturer's batch trace-impurity Certificate of Analysis.

### Nominal Properties
- **Formula & CAS #:** In / Sn (CAS 7440-74-6)
- **Purity Tiers:** 5N (99.999%) / 6N
- **Density & Melting/Sublimation:** 7.31 g/cm³ · MP/Subl. ~156.6 (In) / 231.9 (Sn) °C
- **Standard Forms:** Ø 3×3 mm & Ø 6×6 mm high-purity pellets and shot
- **Recommended Liner / Boat:** Evaporates easily from molybdenum, tantalum, or alumina-coated tungsten resistive boats, or from graphite/vitreous-carbon/Al2O3 e-beam liners at low power

### Applications
- Cryogenic indium flip-chip bump bonding and hermetic wafer sealing
- Thermal evaporation of low-damage electrodes on 2D materials (graphene, MoS2)
- Transparent conductive oxide and III-V ohmic contact alloying
- Plasmonic and superconducting thin-film device fabrication

### Buyer Specification Guide
Specify In / Sn purity (5N (99.999%) / 6N), preferred pellet or granule size (Ø 3×3 mm & Ø 6×6 mm high-purity pellets and shot), deposition method (e-beam hearth pocket cc volume vs. resistive W/Mo/Ta boat), and pack weight in grams.

### Technical FAQs
- **Q: Which crucible liner or boat is recommended for evaporating indium & tin (In / Sn)?**
  A: Evaporates easily from molybdenum, tantalum, or alumina-coated tungsten resistive boats, or from graphite/vitreous-carbon/Al2O3 e-beam liners at low power.
- **Q: How should In / Sn evaporation granules/pellets be pre-conditioned in the chamber?**
  A: Sweep a low-power defocused e-beam or low resistive boat current across the charge behind a closed shutter until chamber base pressure recovers before ramping to deposition rate.
- **Q: What lot sizes are available for TB-EV-INSN?**
  A: Standard research packs are quoted in 50 g, 100 g, 250 g, 500 g, and 1 kg sealed containers with full batch COA.

---
## Zinc Sulfide & Zinc Selenide (ZnS / ZnSe) Evaporation Materials (`TB-EV-ZNS`)
- **URL:** https://tensilebase.com/products/zinc-sulfide-zns-znse-evaporation-granules/
- **Quote URL:** https://tensilebase.com/quote.html?product=zinc-sulfide-zns-znse-evaporation-granules
- **Category:** Thin Film Materials
- **Chemical Formula:** ZnS / ZnSe (Elements: Zn, S, Se)
- **CAS Registry Number:** 1314-98-3
- **Synonyms:** Zinc Sulfide & Zinc Selenide e-beam evaporation pellets, 4N5 (99.995%) CVD Optical Grade ZnS / ZnSe vacuum deposition granules & shot, PVD starter source ZnS / ZnSe
- **Purity / Grades:** 4N5 (99.995%) CVD Optical Grade
- **Typical Dimensions:** 1–4 mm CVD crystalline chunks & sintered pellets
- **Configurations:** 50 g, 100 g, 250 g, 500 g, & 1 kg vacuum-degassed sealed lots
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot COA (ICP-OES / GDMS trace metal ppm breakdown for ZnS / ZnSe) and net-weight sealed lot label.

### Technical Overview
Prepared specifically for high-vacuum electron-beam and resistive thermal evaporation, our 4N5 (99.995%) CVD Optical Grade zinc sulfide & zinc selenide (ZnS / ZnSe, CAS 1314-98-3) deposition materials undergo vacuum degassing or high-temperature sintering to eliminate trapped volatiles and micro-voids that cause melt spitting and pinhole film defects.

Sublimes congruently without liquid melting; use baffled tantalum/molybdenum resistive box sources or quartz/graphite liners to prevent spatter. Supplied in cleanroom argon-flushed containers by weight (50 g to 1,000 g lots) or piece count, accompanied by the manufacturer's batch trace-impurity Certificate of Analysis.

### Nominal Properties
- **Formula & CAS #:** ZnS / ZnSe (CAS 1314-98-3)
- **Purity Tiers:** 4N5 (99.995%) CVD Optical Grade
- **Density & Melting/Sublimation:** 4.09 (ZnS) / 5.27 (ZnSe) g/cm³ · MP/Subl. ~Sublimes ~1,000–1,180 °C °C
- **Standard Forms:** 1–4 mm CVD crystalline chunks & sintered pellets
- **Recommended Liner / Boat:** Sublimes congruently without liquid melting

### Applications
- High-index (n ~ 2.25 for ZnS; n ~ 2.40 for ZnSe) MWIR & LWIR (3–14 µm) thermal imaging optics
- Beam splitters and AR coatings on Ge, Si, Chalcogenide, and ZnSe IR lenses
- Visible-to-IR multispectral optical filter stacks
- Photovoltaic and optoelectronic buffer layers

### Buyer Specification Guide
Specify ZnS / ZnSe purity (4N5 (99.995%) CVD Optical Grade), preferred pellet or granule size (1–4 mm CVD crystalline chunks & sintered pellets), deposition method (e-beam hearth pocket cc volume vs. resistive W/Mo/Ta boat), and pack weight in grams.

### Technical FAQs
- **Q: Which crucible liner or boat is recommended for evaporating zinc sulfide & zinc selenide (ZnS / ZnSe)?**
  A: Sublimes congruently without liquid melting; use baffled tantalum/molybdenum resistive box sources or quartz/graphite liners to prevent spatter.
- **Q: How should ZnS / ZnSe evaporation granules/pellets be pre-conditioned in the chamber?**
  A: Sweep a low-power defocused e-beam or low resistive boat current across the charge behind a closed shutter until chamber base pressure recovers before ramping to deposition rate.
- **Q: What lot sizes are available for TB-EV-ZNS?**
  A: Standard research packs are quoted in 50 g, 100 g, 250 g, 500 g, and 1 kg sealed containers with full batch COA.

---
## Optical Fluorides (LiF, CaF2, BaF2, YF3, LaF3) (LiF / CaF2 / BaF2 / YF3 / LaF3) Evaporation Materials (`TB-EV-FL`)
- **URL:** https://tensilebase.com/products/calcium-barium-lithium-fluoride-evaporation/
- **Quote URL:** https://tensilebase.com/quote.html?product=calcium-barium-lithium-fluoride-evaporation
- **Category:** Thin Film Materials
- **Chemical Formula:** LiF / CaF2 / BaF2 / YF3 / LaF3 (Elements: Li, Ca, Ba, Y, La, F)
- **CAS Registry Number:** 7789-75-5
- **Synonyms:** Optical Fluorides (LiF, CaF2, BaF2, YF3, LaF3) e-beam evaporation pellets, 4N5 (99.995%) Vacuum-Grown Optical Crystal Grade LiF / CaF2 / BaF2 / YF3 / LaF3 vacuum deposition granules & shot, PVD starter source LiF / CaF2 / BaF2 / YF3 / LaF3
- **Purity / Grades:** 4N5 (99.995%) Vacuum-Grown Optical Crystal Grade
- **Typical Dimensions:** 1–3 mm & 2–4 mm crystalline granules (ultra-low moisture)
- **Configurations:** 50 g, 100 g, 250 g, 500 g, & 1 kg vacuum-degassed sealed lots
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot COA (ICP-OES / GDMS trace metal ppm breakdown for LiF / CaF2 / BaF2 / YF3 / LaF3) and net-weight sealed lot label.

### Technical Overview
Prepared specifically for high-vacuum electron-beam and resistive thermal evaporation, our 4N5 (99.995%) Vacuum-Grown Optical Crystal Grade optical fluorides (LiF, CaF2, BaF2, YF3, LaF3) (LiF / CaF2 / BaF2 / YF3 / LaF3, CAS 7789-75-5) deposition materials undergo vacuum degassing or high-temperature sintering to eliminate trapped volatiles and micro-voids that cause melt spitting and pinhole film defects.

Evaporate from molybdenum, tantalum, or platinum resistive boats (or Mo/graphite e-beam liners); LiF (0.5–1.5 nm) is universally evaporated from Mo/Ta boats over Al cathodes in OLEDs. Supplied in cleanroom argon-flushed containers by weight (50 g to 1,000 g lots) or piece count, accompanied by the manufacturer's batch trace-impurity Certificate of Analysis.

### Nominal Properties
- **Formula & CAS #:** LiF / CaF2 / BaF2 / YF3 / LaF3 (CAS 7789-75-5)
- **Purity Tiers:** 4N5 (99.995%) Vacuum-Grown Optical Crystal Grade
- **Density & Melting/Sublimation:** 2.64–6.0 g/cm³ · MP/Subl. ~845–1,495 °C
- **Standard Forms:** 1–3 mm & 2–4 mm crystalline granules (ultra-low moisture)
- **Recommended Liner / Boat:** Evaporate from molybdenum, tantalum, or platinum resistive boats (or Mo/graphite e-beam liners)

### Applications
- 0.5–1.5 nm LiF electron-injection interlayers beneath Al cathodes in OLEDs and organic solar cells
- Deep-UV (157/193/248 nm excimer) low-index optical coatings (LaF3 / MgF2 / CaF2)
- Thorium-free mid-IR and LWIR low-index coatings (YF3, BaF2, CaF2 paired with Ge or ZnS)
- Scintillator and halide perovskite interfacial engineering

### Buyer Specification Guide
Specify LiF / CaF2 / BaF2 / YF3 / LaF3 purity (4N5 (99.995%) Vacuum-Grown Optical Crystal Grade), preferred pellet or granule size (1–3 mm & 2–4 mm crystalline granules (ultra-low moisture)), deposition method (e-beam hearth pocket cc volume vs. resistive W/Mo/Ta boat), and pack weight in grams.

### Technical FAQs
- **Q: Which crucible liner or boat is recommended for evaporating optical fluorides (LiF, CaF2, BaF2, YF3, LaF3) (LiF / CaF2 / BaF2 / YF3 / LaF3)?**
  A: Evaporate from molybdenum, tantalum, or platinum resistive boats (or Mo/graphite e-beam liners); LiF (0.5–1.5 nm) is universally evaporated from Mo/Ta boats over Al cathodes in OLEDs.
- **Q: How should LiF / CaF2 / BaF2 / YF3 / LaF3 evaporation granules/pellets be pre-conditioned in the chamber?**
  A: Sweep a low-power defocused e-beam or low resistive boat current across the charge behind a closed shutter until chamber base pressure recovers before ramping to deposition rate.
- **Q: What lot sizes are available for TB-EV-FL?**
  A: Standard research packs are quoted in 50 g, 100 g, 250 g, 500 g, and 1 kg sealed containers with full batch COA.

---
## Silicon Wafers & Thermal Oxide (SiO2/Si) Substrates (`TB-SUB-SI`)
- **URL:** https://tensilebase.com/products/silicon-wafers-thermal-oxide-sio2/
- **Quote URL:** https://tensilebase.com/quote.html?product=silicon-wafers-thermal-oxide-sio2
- **Category:** Fused Quartz & Substrates
- **Chemical Formula:** Si / SiO2-on-Si (Elements: Si, O)
- **CAS Registry Number:** 7440-21-3
- **Synonyms:** Epi-ready Si / SiO2-on-Si single crystal wafer, silicon wafers & thermal oxide (SiO2/Si) substrates thin-film growth substrate, <100>, <111>, <110> (P-Boron, N-Phosphorus/Arsenic, or Undoped FZ) Si / SiO2-on-Si
- **Purity / Grades:** Prime / Test CZ & FZ Grade (1–100 Ω·cm, Intrinsic >5,000 Ω·cm, or Degenerate 0.001–0.005 Ω·cm)
- **Typical Dimensions:** 10×10 mm, 5×5 mm, 10×5 mm, Ø 1", Ø 2", Ø 3", Ø 4" × 0.5 mm / 1.0 mm
- **Configurations:** 1-Side (SSP) or 2-Side (DSP) Epi-Ready CMP Polish; Cleanroom 100 Pack
- **Typical Lead Time:** 5–12 business days
- **Documentation Included:** Manufacturer Lot COA (crystal orientation X-ray verification, surface roughness Ra, thickness tolerance, and resistivity/doping if applicable).

### Technical Overview
Precision-grown and chemical-mechanical-polished (CMP) in a Class 100 cleanroom, our silicon wafers & thermal oxide (SiO2/Si) substrates (Si / SiO2-on-Si, CAS 7440-21-3) substrates provide atomically smooth, epi-ready surfaces (Ra < 0.2–0.5 nm) for thin-film epitaxy, pulsed laser deposition (PLD), magnetron sputtering, molecular beam epitaxy (MBE), and optical characterization.

Available as bare prime/research wafers, pre-diced 10×10 mm PVD witness chips, or dry/wet thermal oxide (285 nm / 300 nm SiO2 for graphene/2D optical contrast and FET back-gates) and LPCVD Si3N4 coated wafers. Standard research sizes include 5×5 mm, 10×10 mm, and 15×15 mm diced squares (0.5 mm or 1.0 mm thick) as well as Ø 1-inch, 2-inch, 3-inch, and 4-inch wafers in single-side (SSP) or double-side (DSP) polished finishes, packed in individual waffle trays or nitrogen-sealed cassettes with batch orientation and surface inspection data.

### Nominal Properties
- **Formula & CAS #:** Si / SiO2-on-Si (CAS 7440-21-3)
- **Crystal System / Grade:** Cubic Diamond (Fd-3m) · Prime / Test CZ & FZ Grade (1–100 Ω·cm, Intrinsic >5,000 Ω·cm, or Degenerate 0.001–0.005 Ω·cm)
- **Density:** 2.33 g/cm³
- **Standard Orientations:** <100>, <111>, <110> (P-Boron, N-Phosphorus/Arsenic, or Undoped FZ)
- **Surface Finish (CMP):** Ra < 0.2 nm Epi-Ready SSP/DSP; Dry/Wet Thermal SiO2 (90 nm, 285 nm, 300 nm, 500 nm, 1 µm)

### Applications
- 2D material exfoliation & CVD transfer (285 nm / 300 nm thermal SiO2 on degenerate Si back-gate)
- PVD/ALD/PECVD thin-film witness chips (10×10 mm pre-diced or scored wafers)
- High-resistivity Float-Zone (FZ >5,000 Ω·cm) THz optics, RF MEMS, and superconducting qubits
- MEMS KOH/DRIE microfabrication and photonic waveguide substrates

### Buyer Specification Guide
Specify Si / SiO2-on-Si crystallographic orientation (<100>, <111>, <110> (P-Boron, N-Phosphorus/Arsenic, or Undoped FZ)), dimensions and thickness (e.g., 10×10×0.5 mm or Ø 2" × 0.5 mm), SSP vs. DSP polish, edge orientation, and pack count.

### Technical FAQs
- **Q: Are silicon wafers & thermal oxide (SiO2/Si) substrates (Si / SiO2-on-Si) substrates ready for epitaxial deposition out of the box?**
  A: Yes. All epi-ready substrates are final CMP-polished and packaged in cleanroom waffle packs or sealed containers with sub-nanometer Ra roughness.
- **Q: What tolerances apply to 10×10×0.5 mm diced Si / SiO2-on-Si substrates?**
  A: Standard lateral dimensions are ±0.05–0.10 mm, thickness is ±0.02–0.05 mm, and crystal axis orientation accuracy is within ±0.5° (or ±0.1° on custom request).
- **Q: Can I order custom sizes, thicknesses, or double-side polishing for TB-SUB-SI?**
  A: Yes. Both single-side (SSP) and double-side (DSP) polished substrates as well as custom laser/wire-saw diced dimensions can be quoted with no high minimum order quantity.

---
## Single-Crystal 4H-SiC & 6H-SiC Wafers & Substrates (`TB-SUB-SIC`)
- **URL:** https://tensilebase.com/products/silicon-carbide-4h-6h-sic-wafers/
- **Quote URL:** https://tensilebase.com/quote.html?product=silicon-carbide-4h-6h-sic-wafers
- **Category:** Fused Quartz & Substrates
- **Chemical Formula:** SiC (4H / 6H) (Elements: Si, C)
- **CAS Registry Number:** 409-21-2
- **Synonyms:** Epi-ready SiC (4H / 6H) single crystal wafer, Single-Crystal 4H-SiC & 6H-SiC wafers & substrates thin-film growth substrate, (0001) On-Axis or 4° Off-Axis toward <11-20>; Si-Face CMP SiC (4H / 6H)
- **Purity / Grades:** PVT Single-Crystal N-Type Conductive & High-Purity Semi-Insulating (HPSI)
- **Typical Dimensions:** 10×10 mm, 5×5 mm, 10×5 mm, Ø 1", Ø 2", Ø 3", Ø 4" × 0.5 mm / 1.0 mm
- **Configurations:** 1-Side (SSP) or 2-Side (DSP) Epi-Ready CMP Polish; Cleanroom 100 Pack
- **Typical Lead Time:** 5–12 business days
- **Documentation Included:** Manufacturer Lot COA (crystal orientation X-ray verification, surface roughness Ra, thickness tolerance, and resistivity/doping if applicable).

### Technical Overview
Precision-grown and chemical-mechanical-polished (CMP) in a Class 100 cleanroom, our Single-Crystal 4H-SiC & 6H-SiC wafers & substrates (SiC (4H / 6H), CAS 409-21-2) substrates provide atomically smooth, epi-ready surfaces (Ra < 0.2–0.5 nm) for thin-film epitaxy, pulsed laser deposition (PLD), magnetron sputtering, molecular beam epitaxy (MBE), and optical characterization.

Wide-bandgap (3.26 eV for 4H-SiC) and ultra-high thermal conductivity (~370–490 W/m·K) make single-crystal SiC the premier substrate for GaN/AlN epitaxy, high-power electronics, and quantum color-center photonics. Standard research sizes include 5×5 mm, 10×10 mm, and 15×15 mm diced squares (0.5 mm or 1.0 mm thick) as well as Ø 1-inch, 2-inch, 3-inch, and 4-inch wafers in single-side (SSP) or double-side (DSP) polished finishes, packed in individual waffle trays or nitrogen-sealed cassettes with batch orientation and surface inspection data.

### Nominal Properties
- **Formula & CAS #:** SiC (4H / 6H) (CAS 409-21-2)
- **Crystal System / Grade:** Hexagonal Wurtzite Polytype (4H / 6H) · PVT Single-Crystal N-Type Conductive & High-Purity Semi-Insulating (HPSI)
- **Density:** 3.21 g/cm³
- **Standard Orientations:** (0001) On-Axis or 4° Off-Axis toward <11-20>; Si-Face CMP
- **Surface Finish (CMP):** Si-face Epi-Ready CMP (Ra < 0.2 nm); C-face Optical Polish

### Applications
- Homoepitaxial SiC and heteroepitaxial GaN/AlGaN HEMT RF & power device growth
- 10×10 mm High-Purity Semi-Insulating (HPSI) substrates for graphene sublimation and spintronics
- Silicon-vacancy (VSi) and divacancy quantum photonics research
- High-thermal-conductivity heat spreaders and UV photodetectors

### Buyer Specification Guide
Specify SiC (4H / 6H) crystallographic orientation ((0001) On-Axis or 4° Off-Axis toward <11-20>; Si-Face CMP), dimensions and thickness (e.g., 10×10×0.5 mm or Ø 2" × 0.5 mm), SSP vs. DSP polish, edge orientation, and pack count.

### Technical FAQs
- **Q: Are Single-Crystal 4H-SiC & 6H-SiC wafers & substrates (SiC (4H / 6H)) substrates ready for epitaxial deposition out of the box?**
  A: Yes. All epi-ready substrates are final CMP-polished and packaged in cleanroom waffle packs or sealed containers with sub-nanometer Ra roughness.
- **Q: What tolerances apply to 10×10×0.5 mm diced SiC (4H / 6H) substrates?**
  A: Standard lateral dimensions are ±0.05–0.10 mm, thickness is ±0.02–0.05 mm, and crystal axis orientation accuracy is within ±0.5° (or ±0.1° on custom request).
- **Q: Can I order custom sizes, thicknesses, or double-side polishing for TB-SUB-SIC?**
  A: Yes. Both single-side (SSP) and double-side (DSP) polished substrates as well as custom laser/wire-saw diced dimensions can be quoted with no high minimum order quantity.

---
## Magnesium Oxide (MgO) Single-Crystal Substrates (`TB-SUB-MGO`)
- **URL:** https://tensilebase.com/products/magnesium-oxide-mgo-substrates/
- **Quote URL:** https://tensilebase.com/quote.html?product=magnesium-oxide-mgo-substrates
- **Category:** Fused Quartz & Substrates
- **Chemical Formula:** MgO (Elements: Mg, O)
- **CAS Registry Number:** 1309-48-4
- **Synonyms:** Epi-ready MgO single crystal wafer, magnesium oxide (MgO) Single-Crystal substrates thin-film growth substrate, <100>, <110>, <111> MgO
- **Purity / Grades:** Arc-Fusion Single Crystal 4N (99.99%)
- **Typical Dimensions:** 10×10 mm, 5×5 mm, 10×5 mm, Ø 1", Ø 2", Ø 3", Ø 4" × 0.5 mm / 1.0 mm
- **Configurations:** 1-Side (SSP) or 2-Side (DSP) Epi-Ready CMP Polish; Cleanroom 100 Pack
- **Typical Lead Time:** 5–12 business days
- **Documentation Included:** Manufacturer Lot COA (crystal orientation X-ray verification, surface roughness Ra, thickness tolerance, and resistivity/doping if applicable).

### Technical Overview
Precision-grown and chemical-mechanical-polished (CMP) in a Class 100 cleanroom, our magnesium oxide (MgO) Single-Crystal substrates (MgO, CAS 1309-48-4) substrates provide atomically smooth, epi-ready surfaces (Ra < 0.2–0.5 nm) for thin-film epitaxy, pulsed laser deposition (PLD), magnetron sputtering, molecular beam epitaxy (MBE), and optical characterization.

With its cubic rock-salt lattice parameter (a = 4.212 Å) and low dielectric loss, single-crystal MgO is the standard substrate for Fe/CoFeB/MgO magnetic tunnel junctions, YBCO high-Tc superconductors, and ferroelectric perovskite films. Standard research sizes include 5×5 mm, 10×10 mm, and 15×15 mm diced squares (0.5 mm or 1.0 mm thick) as well as Ø 1-inch, 2-inch, 3-inch, and 4-inch wafers in single-side (SSP) or double-side (DSP) polished finishes, packed in individual waffle trays or nitrogen-sealed cassettes with batch orientation and surface inspection data.

### Nominal Properties
- **Formula & CAS #:** MgO (CAS 1309-48-4)
- **Crystal System / Grade:** Cubic Rock-Salt (a = 4.212 Å) · Arc-Fusion Single Crystal 4N (99.99%)
- **Density:** 3.58 g/cm³
- **Standard Orientations:** <100>, <110>, <111>
- **Surface Finish (CMP):** Ra < 0.5 nm Cleanroom CMP (Sealed against atmospheric moisture)

### Applications
- Epitaxial Fe / CoFeB / MgO magnetic tunnel junctions (MTJ) and spintronic hetero-structures
- High-Tc superconducting YBCO (YBa2Cu3O7-δ) and MgB2 thin-film growth
- Ferroelectric BaTiO3, PZT, and nitride thin-film pulsed laser deposition (PLD)
- Terahertz and microwave low-loss dielectric substrates

### Buyer Specification Guide
Specify MgO crystallographic orientation (<100>, <110>, <111>), dimensions and thickness (e.g., 10×10×0.5 mm or Ø 2" × 0.5 mm), SSP vs. DSP polish, edge orientation, and pack count.

### Technical FAQs
- **Q: Are magnesium oxide (MgO) Single-Crystal substrates (MgO) substrates ready for epitaxial deposition out of the box?**
  A: Yes. All epi-ready substrates are final CMP-polished and packaged in cleanroom waffle packs or sealed containers with sub-nanometer Ra roughness.
- **Q: What tolerances apply to 10×10×0.5 mm diced MgO substrates?**
  A: Standard lateral dimensions are ±0.05–0.10 mm, thickness is ±0.02–0.05 mm, and crystal axis orientation accuracy is within ±0.5° (or ±0.1° on custom request).
- **Q: Can I order custom sizes, thicknesses, or double-side polishing for TB-SUB-MGO?**
  A: Yes. Both single-side (SSP) and double-side (DSP) polished substrates as well as custom laser/wire-saw diced dimensions can be quoted with no high minimum order quantity.

---
## Strontium Titanate (SrTiO3 & Nb:STO) Single-Crystal Substrates (`TB-SUB-STO`)
- **URL:** https://tensilebase.com/products/strontium-titanate-srtio3-sto-substrates/
- **Quote URL:** https://tensilebase.com/quote.html?product=strontium-titanate-srtio3-sto-substrates
- **Category:** Fused Quartz & Substrates
- **Chemical Formula:** SrTiO3 / Nb:SrTiO3 (Elements: Sr, Ti, Nb, O)
- **CAS Registry Number:** 12060-59-2
- **Synonyms:** Epi-ready SrTiO3 / Nb:SrTiO3 single crystal wafer, strontium titanate (SrTiO3 & Nb:STO) Single-Crystal substrates thin-film growth substrate, <100>, <110>, <111> SrTiO3 / Nb:SrTiO3
- **Purity / Grades:** Verneuil Single Crystal 4N (Undoped Insulating or 0.05–0.7 wt% Nb-Doped Conductive)
- **Typical Dimensions:** 10×10 mm, 5×5 mm, 10×5 mm, Ø 1", Ø 2", Ø 3", Ø 4" × 0.5 mm / 1.0 mm
- **Configurations:** 1-Side (SSP) or 2-Side (DSP) Epi-Ready CMP Polish; Cleanroom 100 Pack
- **Typical Lead Time:** 5–12 business days
- **Documentation Included:** Manufacturer Lot COA (crystal orientation X-ray verification, surface roughness Ra, thickness tolerance, and resistivity/doping if applicable).

### Technical Overview
Precision-grown and chemical-mechanical-polished (CMP) in a Class 100 cleanroom, our strontium titanate (SrTiO3 & Nb:STO) Single-Crystal substrates (SrTiO3 / Nb:SrTiO3, CAS 12060-59-2) substrates provide atomically smooth, epi-ready surfaces (Ra < 0.2–0.5 nm) for thin-film epitaxy, pulsed laser deposition (PLD), magnetron sputtering, molecular beam epitaxy (MBE), and optical characterization.

Featuring the canonical cubic perovskite lattice (a = 3.905 Å), SrTiO3 and conductive Nb-doped SrTiO3 (0.05%, 0.5%, 0.7% wt) are foundational substrates for complex oxide MBE/PLD, 2DEG interfaces (LAO/STO), and bottom-electrode ferroelectric stacks. Standard research sizes include 5×5 mm, 10×10 mm, and 15×15 mm diced squares (0.5 mm or 1.0 mm thick) as well as Ø 1-inch, 2-inch, 3-inch, and 4-inch wafers in single-side (SSP) or double-side (DSP) polished finishes, packed in individual waffle trays or nitrogen-sealed cassettes with batch orientation and surface inspection data.

### Nominal Properties
- **Formula & CAS #:** SrTiO3 / Nb:SrTiO3 (CAS 12060-59-2)
- **Crystal System / Grade:** Cubic Perovskite (a = 3.905 Å) · Verneuil Single Crystal 4N (Undoped Insulating or 0.05–0.7 wt% Nb-Doped Conductive)
- **Density:** 5.12 g/cm³
- **Standard Orientations:** <100>, <110>, <111>
- **Surface Finish (CMP):** Ra < 0.25 nm Epi-Ready CMP (TiO2-terminated step-terrace compatible)

### Applications
- 2D electron gas (2DEG) research at LaAlO3 / SrTiO3 heterointerfaces
- Epitaxial growth of cuprate superconductors, manganites (LSMO), and multiferroic BiFeO3
- Conductive Nb:SrTiO3 bottom-electrode substrates for ferroelectric BaTiO3/PZT and photoelectrochemistry
- High-dielectric-constant (εr ~ 300 at RT; >10,000 at 4 K) cryogenic electronics

### Buyer Specification Guide
Specify SrTiO3 / Nb:SrTiO3 crystallographic orientation (<100>, <110>, <111>), dimensions and thickness (e.g., 10×10×0.5 mm or Ø 2" × 0.5 mm), SSP vs. DSP polish, edge orientation, and pack count.

### Technical FAQs
- **Q: Are strontium titanate (SrTiO3 & Nb:STO) Single-Crystal substrates (SrTiO3 / Nb:SrTiO3) substrates ready for epitaxial deposition out of the box?**
  A: Yes. All epi-ready substrates are final CMP-polished and packaged in cleanroom waffle packs or sealed containers with sub-nanometer Ra roughness.
- **Q: What tolerances apply to 10×10×0.5 mm diced SrTiO3 / Nb:SrTiO3 substrates?**
  A: Standard lateral dimensions are ±0.05–0.10 mm, thickness is ±0.02–0.05 mm, and crystal axis orientation accuracy is within ±0.5° (or ±0.1° on custom request).
- **Q: Can I order custom sizes, thicknesses, or double-side polishing for TB-SUB-STO?**
  A: Yes. Both single-side (SSP) and double-side (DSP) polished substrates as well as custom laser/wire-saw diced dimensions can be quoted with no high minimum order quantity.

---
## Lanthanum Aluminate (LaAlO3) Single-Crystal Substrates (`TB-SUB-LAO`)
- **URL:** https://tensilebase.com/products/lanthanum-aluminate-laalo3-lao-substrates/
- **Quote URL:** https://tensilebase.com/quote.html?product=lanthanum-aluminate-laalo3-lao-substrates
- **Category:** Fused Quartz & Substrates
- **Chemical Formula:** LaAlO3 (Elements: La, Al, O)
- **CAS Registry Number:** 12003-65-5
- **Synonyms:** Epi-ready LaAlO3 single crystal wafer, lanthanum aluminate (LaAlO3) Single-Crystal substrates thin-film growth substrate, <100> Pseudocubic, <110>, <111> LaAlO3
- **Purity / Grades:** Czochralski Single Crystal 4N (99.99%)
- **Typical Dimensions:** 10×10 mm, 5×5 mm, 10×5 mm, Ø 1", Ø 2", Ø 3", Ø 4" × 0.5 mm / 1.0 mm
- **Configurations:** 1-Side (SSP) or 2-Side (DSP) Epi-Ready CMP Polish; Cleanroom 100 Pack
- **Typical Lead Time:** 5–12 business days
- **Documentation Included:** Manufacturer Lot COA (crystal orientation X-ray verification, surface roughness Ra, thickness tolerance, and resistivity/doping if applicable).

### Technical Overview
Precision-grown and chemical-mechanical-polished (CMP) in a Class 100 cleanroom, our lanthanum aluminate (LaAlO3) Single-Crystal substrates (LaAlO3, CAS 12003-65-5) substrates provide atomically smooth, epi-ready surfaces (Ra < 0.2–0.5 nm) for thin-film epitaxy, pulsed laser deposition (PLD), magnetron sputtering, molecular beam epitaxy (MBE), and optical characterization.

Czochralski-grown LaAlO3 combines a pseudocubic perovskite lattice (a = 3.791 Å) with low microwave dielectric loss tangent (tan δ ~ 3 × 10⁻⁵), making it ideal for high-frequency superconducting filters and functional oxide epitaxy. Standard research sizes include 5×5 mm, 10×10 mm, and 15×15 mm diced squares (0.5 mm or 1.0 mm thick) as well as Ø 1-inch, 2-inch, 3-inch, and 4-inch wafers in single-side (SSP) or double-side (DSP) polished finishes, packed in individual waffle trays or nitrogen-sealed cassettes with batch orientation and surface inspection data.

### Nominal Properties
- **Formula & CAS #:** LaAlO3 (CAS 12003-65-5)
- **Crystal System / Grade:** Pseudocubic Rhombohedral Perovskite (a = 3.791 Å) · Czochralski Single Crystal 4N (99.99%)
- **Density:** 6.52 g/cm³
- **Standard Orientations:** <100> Pseudocubic, <110>, <111>
- **Surface Finish (CMP):** Ra < 0.3 nm Epi-Ready CMP (SSP / DSP)

### Applications
- High-Tc superconducting microwave resonators and filter circuits
- Compressive-strain engineering of perovskite oxide thin films by PLD and oxide MBE
- Heterointerface transport and correlated electron physics research
- III-nitride and functional ceramic buffer growth

### Buyer Specification Guide
Specify LaAlO3 crystallographic orientation (<100> Pseudocubic, <110>, <111>), dimensions and thickness (e.g., 10×10×0.5 mm or Ø 2" × 0.5 mm), SSP vs. DSP polish, edge orientation, and pack count.

### Technical FAQs
- **Q: Are lanthanum aluminate (LaAlO3) Single-Crystal substrates (LaAlO3) substrates ready for epitaxial deposition out of the box?**
  A: Yes. All epi-ready substrates are final CMP-polished and packaged in cleanroom waffle packs or sealed containers with sub-nanometer Ra roughness.
- **Q: What tolerances apply to 10×10×0.5 mm diced LaAlO3 substrates?**
  A: Standard lateral dimensions are ±0.05–0.10 mm, thickness is ±0.02–0.05 mm, and crystal axis orientation accuracy is within ±0.5° (or ±0.1° on custom request).
- **Q: Can I order custom sizes, thicknesses, or double-side polishing for TB-SUB-LAO?**
  A: Yes. Both single-side (SSP) and double-side (DSP) polished substrates as well as custom laser/wire-saw diced dimensions can be quoted with no high minimum order quantity.

---
## Yttria-Stabilized Zirconia (YSZ) Single-Crystal Substrates (`TB-SUB-YSZ`)
- **URL:** https://tensilebase.com/products/ysz-single-crystal-substrates/
- **Quote URL:** https://tensilebase.com/quote.html?product=ysz-single-crystal-substrates
- **Category:** Fused Quartz & Substrates
- **Chemical Formula:** ZrO2:Y2O3 (8–9.5 mol% Y2O3) (Elements: Zr, Y, O)
- **CAS Registry Number:** 1314-23-4
- **Synonyms:** Epi-ready ZrO2:Y2O3 (8–9.5 mol% Y2O3) single crystal wafer, Yttria-Stabilized zirconia (YSZ) Single-Crystal substrates thin-film growth substrate, <100>, <110>, <111> ZrO2:Y2O3 (8–9.5 mol% Y2O3)
- **Purity / Grades:** Skull-Melted Cubic Single Crystal 4N
- **Typical Dimensions:** 10×10 mm, 5×5 mm, 10×5 mm, Ø 1", Ø 2", Ø 3", Ø 4" × 0.5 mm / 1.0 mm
- **Configurations:** 1-Side (SSP) or 2-Side (DSP) Epi-Ready CMP Polish; Cleanroom 100 Pack
- **Typical Lead Time:** 5–12 business days
- **Documentation Included:** Manufacturer Lot COA (crystal orientation X-ray verification, surface roughness Ra, thickness tolerance, and resistivity/doping if applicable).

### Technical Overview
Precision-grown and chemical-mechanical-polished (CMP) in a Class 100 cleanroom, our Yttria-Stabilized zirconia (YSZ) Single-Crystal substrates (ZrO2:Y2O3 (8–9.5 mol% Y2O3), CAS 1314-23-4) substrates provide atomically smooth, epi-ready surfaces (Ra < 0.2–0.5 nm) for thin-film epitaxy, pulsed laser deposition (PLD), magnetron sputtering, molecular beam epitaxy (MBE), and optical characterization.

Cubic single-crystal YSZ provides chemical inertness, oxygen-ion conductivity at elevated temperatures, and an excellent lattice/thermal buffer for silicon-on-insulator, YBCO, and solid-state electrolyte thin-film studies. Standard research sizes include 5×5 mm, 10×10 mm, and 15×15 mm diced squares (0.5 mm or 1.0 mm thick) as well as Ø 1-inch, 2-inch, 3-inch, and 4-inch wafers in single-side (SSP) or double-side (DSP) polished finishes, packed in individual waffle trays or nitrogen-sealed cassettes with batch orientation and surface inspection data.

### Nominal Properties
- **Formula & CAS #:** ZrO2:Y2O3 (8–9.5 mol% Y2O3) (CAS 1314-23-4)
- **Crystal System / Grade:** Cubic Fluorite (a = 5.125 Å) · Skull-Melted Cubic Single Crystal 4N
- **Density:** 5.90 g/cm³
- **Standard Orientations:** <100>, <110>, <111>
- **Surface Finish (CMP):** Ra < 0.3 nm Epi-Ready CMP (SSP / DSP)

### Applications
- Model single-crystal oxygen-ion electrolyte for solid-oxide fuel cell (SOFC) kinetics research
- Epitaxial YBCO superconductor and CeO2 buffer layer deposition
- High-temperature refractive and IR optical windows
- Piezoelectric and ferroelectric oxide thin-film growth

### Buyer Specification Guide
Specify ZrO2:Y2O3 (8–9.5 mol% Y2O3) crystallographic orientation (<100>, <110>, <111>), dimensions and thickness (e.g., 10×10×0.5 mm or Ø 2" × 0.5 mm), SSP vs. DSP polish, edge orientation, and pack count.

### Technical FAQs
- **Q: Are Yttria-Stabilized zirconia (YSZ) Single-Crystal substrates (ZrO2:Y2O3 (8–9.5 mol% Y2O3)) substrates ready for epitaxial deposition out of the box?**
  A: Yes. All epi-ready substrates are final CMP-polished and packaged in cleanroom waffle packs or sealed containers with sub-nanometer Ra roughness.
- **Q: What tolerances apply to 10×10×0.5 mm diced ZrO2:Y2O3 (8–9.5 mol% Y2O3) substrates?**
  A: Standard lateral dimensions are ±0.05–0.10 mm, thickness is ±0.02–0.05 mm, and crystal axis orientation accuracy is within ±0.5° (or ±0.1° on custom request).
- **Q: Can I order custom sizes, thicknesses, or double-side polishing for TB-SUB-YSZ?**
  A: Yes. Both single-side (SSP) and double-side (DSP) polished substrates as well as custom laser/wire-saw diced dimensions can be quoted with no high minimum order quantity.

---
## Lithium Niobate (LiNbO3) & Lithium Tantalate (LiTaO3) Wafers (`TB-SUB-LNO`)
- **URL:** https://tensilebase.com/products/lithium-niobate-linbo3-tantalate-wafers/
- **Quote URL:** https://tensilebase.com/quote.html?product=lithium-niobate-linbo3-tantalate-wafers
- **Category:** Fused Quartz & Substrates
- **Chemical Formula:** LiNbO3 / LiTaO3 (Elements: Li, Nb, Ta, O)
- **CAS Registry Number:** 12031-63-9
- **Synonyms:** Epi-ready LiNbO3 / LiTaO3 single crystal wafer, lithium niobate (LiNbO3) & lithium tantalate (LiTaO3) wafers thin-film growth substrate, X-Cut, Y-Cut, Z-Cut, 128° Y-X Cut, 36°/42°/64° Y-X Cut LiNbO3 / LiTaO3
- **Purity / Grades:** Czochralski Optical / SAW / Black-Reduced Grade (Congruent, Stoichiometric, or 5 mol% MgO-Doped)
- **Typical Dimensions:** 10×10 mm, 5×5 mm, 10×5 mm, Ø 1", Ø 2", Ø 3", Ø 4" × 0.5 mm / 1.0 mm
- **Configurations:** 1-Side (SSP) or 2-Side (DSP) Epi-Ready CMP Polish; Cleanroom 100 Pack
- **Typical Lead Time:** 5–12 business days
- **Documentation Included:** Manufacturer Lot COA (crystal orientation X-ray verification, surface roughness Ra, thickness tolerance, and resistivity/doping if applicable).

### Technical Overview
Precision-grown and chemical-mechanical-polished (CMP) in a Class 100 cleanroom, our lithium niobate (LiNbO3) & lithium tantalate (LiTaO3) wafers (LiNbO3 / LiTaO3, CAS 12031-63-9) substrates provide atomically smooth, epi-ready surfaces (Ra < 0.2–0.5 nm) for thin-film epitaxy, pulsed laser deposition (PLD), magnetron sputtering, molecular beam epitaxy (MBE), and optical characterization.

High electro-optic (Pockels), nonlinear optical, and piezoelectric coupling coefficients make LiNbO3 and LiTaO3 wafers indispensable for RF SAW/BAW filters, integrated photonic modulators, and acoustic transducer research. Standard research sizes include 5×5 mm, 10×10 mm, and 15×15 mm diced squares (0.5 mm or 1.0 mm thick) as well as Ø 1-inch, 2-inch, 3-inch, and 4-inch wafers in single-side (SSP) or double-side (DSP) polished finishes, packed in individual waffle trays or nitrogen-sealed cassettes with batch orientation and surface inspection data.

### Nominal Properties
- **Formula & CAS #:** LiNbO3 / LiTaO3 (CAS 12031-63-9)
- **Crystal System / Grade:** Trigonal (R3c) · Czochralski Optical / SAW / Black-Reduced Grade (Congruent, Stoichiometric, or 5 mol% MgO-Doped)
- **Density:** 4.65 (LiNbO3) / 7.45 (LiTaO3) g/cm³
- **Standard Orientations:** X-Cut, Y-Cut, Z-Cut, 128° Y-X Cut, 36°/42°/64° Y-X Cut
- **Surface Finish (CMP):** Ra < 0.3 nm Optical & SAW Grade SSP/DSP

### Applications
- Surface acoustic wave (SAW) RF filters and delay lines (128° Y-X LiNbO3, 36°/42° Y-X LiTaO3)
- Thin-film lithium niobate (TFLN) electro-optic modulators and PPLN frequency doublers
- Piezoelectric ultrasonic transducers and acousto-optic deflectors
- Pyroelectric infrared sensors and domain-engineering research

### Buyer Specification Guide
Specify LiNbO3 / LiTaO3 crystallographic orientation (X-Cut, Y-Cut, Z-Cut, 128° Y-X Cut, 36°/42°/64° Y-X Cut), dimensions and thickness (e.g., 10×10×0.5 mm or Ø 2" × 0.5 mm), SSP vs. DSP polish, edge orientation, and pack count.

### Technical FAQs
- **Q: Are lithium niobate (LiNbO3) & lithium tantalate (LiTaO3) wafers (LiNbO3 / LiTaO3) substrates ready for epitaxial deposition out of the box?**
  A: Yes. All epi-ready substrates are final CMP-polished and packaged in cleanroom waffle packs or sealed containers with sub-nanometer Ra roughness.
- **Q: What tolerances apply to 10×10×0.5 mm diced LiNbO3 / LiTaO3 substrates?**
  A: Standard lateral dimensions are ±0.05–0.10 mm, thickness is ±0.02–0.05 mm, and crystal axis orientation accuracy is within ±0.5° (or ±0.1° on custom request).
- **Q: Can I order custom sizes, thicknesses, or double-side polishing for TB-SUB-LNO?**
  A: Yes. Both single-side (SSP) and double-side (DSP) polished substrates as well as custom laser/wire-saw diced dimensions can be quoted with no high minimum order quantity.

---
## GaN-on-Sapphire & AlN-on-Sapphire Epi Templates (`TB-SUB-GAN`)
- **URL:** https://tensilebase.com/products/gallium-nitride-gan-aln-templates/
- **Quote URL:** https://tensilebase.com/quote.html?product=gallium-nitride-gan-aln-templates
- **Category:** Fused Quartz & Substrates
- **Chemical Formula:** GaN / AlN on α-Al2O3 (Elements: Ga, Al, N, O)
- **CAS Registry Number:** 25617-97-4
- **Synonyms:** Epi-ready GaN / AlN on α-Al2O3 single crystal wafer, GaN-on-Sapphire & AlN-on-Sapphire epi templates thin-film growth substrate, (0001) C-Plane (1–5 µm AlN or 3–5 µm GaN epilayer on Ø 2" / 4" or 10×10 mm Sapphire) GaN / AlN on α-Al2O3
- **Purity / Grades:** MOCVD / HVPE Epitaxial Template (Undoped, Si-Doped N-Type, or Fe-Doped Semi-Insulating)
- **Typical Dimensions:** 10×10 mm, 5×5 mm, 10×5 mm, Ø 1", Ø 2", Ø 3", Ø 4" × 0.5 mm / 1.0 mm
- **Configurations:** 1-Side (SSP) or 2-Side (DSP) Epi-Ready CMP Polish; Cleanroom 100 Pack
- **Typical Lead Time:** 5–12 business days
- **Documentation Included:** Manufacturer Lot COA (crystal orientation X-ray verification, surface roughness Ra, thickness tolerance, and resistivity/doping if applicable).

### Technical Overview
Precision-grown and chemical-mechanical-polished (CMP) in a Class 100 cleanroom, our GaN-on-Sapphire & AlN-on-Sapphire epi templates (GaN / AlN on α-Al2O3, CAS 25617-97-4) substrates provide atomically smooth, epi-ready surfaces (Ra < 0.2–0.5 nm) for thin-film epitaxy, pulsed laser deposition (PLD), magnetron sputtering, molecular beam epitaxy (MBE), and optical characterization.

Pre-grown MOCVD/HVPE GaN and AlN epitaxial templates on C-plane sapphire allow labs to jump straight into active III-nitride quantum well, HEMT, UV-LED, and acoustic resonator regrowth or device fabrication. Standard research sizes include 5×5 mm, 10×10 mm, and 15×15 mm diced squares (0.5 mm or 1.0 mm thick) as well as Ø 1-inch, 2-inch, 3-inch, and 4-inch wafers in single-side (SSP) or double-side (DSP) polished finishes, packed in individual waffle trays or nitrogen-sealed cassettes with batch orientation and surface inspection data.

### Nominal Properties
- **Formula & CAS #:** GaN / AlN on α-Al2O3 (CAS 25617-97-4)
- **Crystal System / Grade:** Hexagonal Wurtzite (0001) on C-Plane Sapphire · MOCVD / HVPE Epitaxial Template (Undoped, Si-Doped N-Type, or Fe-Doped Semi-Insulating)
- **Density:** 6.15 (GaN) / 3.26 (AlN) g/cm³
- **Standard Orientations:** (0001) C-Plane (1–5 µm AlN or 3–5 µm GaN epilayer on Ø 2" / 4" or 10×10 mm Sapphire)
- **Surface Finish (CMP):** Epi-Ready As-Grown Atomic Step Surface (Ra < 0.3 nm)

### Applications
- AlGaN/GaN HEMT RF & power transistor fabrication and regrowth
- Deep-UV (UVC 230–280 nm) LED and solar-blind photodetector epitaxy on AlN/Sapphire templates
- GaN photonic crystals, micro-LED arrays, and polariton cavity devices
- High-frequency SAW/BAW acoustic wave devices on single-crystal AlN/Sapphire

### Buyer Specification Guide
Specify GaN / AlN on α-Al2O3 crystallographic orientation ((0001) C-Plane (1–5 µm AlN or 3–5 µm GaN epilayer on Ø 2" / 4" or 10×10 mm Sapphire)), dimensions and thickness (e.g., 10×10×0.5 mm or Ø 2" × 0.5 mm), SSP vs. DSP polish, edge orientation, and pack count.

### Technical FAQs
- **Q: Are GaN-on-Sapphire & AlN-on-Sapphire epi templates (GaN / AlN on α-Al2O3) substrates ready for epitaxial deposition out of the box?**
  A: Yes. All epi-ready substrates are final CMP-polished and packaged in cleanroom waffle packs or sealed containers with sub-nanometer Ra roughness.
- **Q: What tolerances apply to 10×10×0.5 mm diced GaN / AlN on α-Al2O3 substrates?**
  A: Standard lateral dimensions are ±0.05–0.10 mm, thickness is ±0.02–0.05 mm, and crystal axis orientation accuracy is within ±0.5° (or ±0.1° on custom request).
- **Q: Can I order custom sizes, thicknesses, or double-side polishing for TB-SUB-GAN?**
  A: Yes. Both single-side (SSP) and double-side (DSP) polished substrates as well as custom laser/wire-saw diced dimensions can be quoted with no high minimum order quantity.

---
## Magnesium Aluminate Spinel (MgAl2O4) Substrates & Windows (`TB-SUB-SPN`)
- **URL:** https://tensilebase.com/products/magnesium-aluminate-spinel-mgal2o4-substrates/
- **Quote URL:** https://tensilebase.com/quote.html?product=magnesium-aluminate-spinel-mgal2o4-substrates
- **Category:** Fused Quartz & Substrates
- **Chemical Formula:** MgAl2O4 (Elements: Mg, Al, O)
- **CAS Registry Number:** 1306-44-1
- **Synonyms:** Epi-ready MgAl2O4 single crystal wafer, magnesium aluminate spinel (MgAl2O4) substrates & windows thin-film growth substrate, <100>, <110>, <111> MgAl2O4
- **Purity / Grades:** Czochralski Single Crystal 4N (99.99%)
- **Typical Dimensions:** 10×10 mm, 5×5 mm, 10×5 mm, Ø 1", Ø 2", Ø 3", Ø 4" × 0.5 mm / 1.0 mm
- **Configurations:** 1-Side (SSP) or 2-Side (DSP) Epi-Ready CMP Polish; Cleanroom 100 Pack
- **Typical Lead Time:** 5–12 business days
- **Documentation Included:** Manufacturer Lot COA (crystal orientation X-ray verification, surface roughness Ra, thickness tolerance, and resistivity/doping if applicable).

### Technical Overview
Precision-grown and chemical-mechanical-polished (CMP) in a Class 100 cleanroom, our magnesium aluminate spinel (MgAl2O4) substrates & windows (MgAl2O4, CAS 1306-44-1) substrates provide atomically smooth, epi-ready surfaces (Ra < 0.2–0.5 nm) for thin-film epitaxy, pulsed laser deposition (PLD), magnetron sputtering, molecular beam epitaxy (MBE), and optical characterization.

Isotropic cubic symmetry (zero birefringence) and broad UV-to-MWIR transmission (0.2–5.5 µm) make single-crystal MgAl2O4 spinel a versatile substrate for ferrite spintronics, silicon/III-N epitaxy, and rugged optical viewports. Standard research sizes include 5×5 mm, 10×10 mm, and 15×15 mm diced squares (0.5 mm or 1.0 mm thick) as well as Ø 1-inch, 2-inch, 3-inch, and 4-inch wafers in single-side (SSP) or double-side (DSP) polished finishes, packed in individual waffle trays or nitrogen-sealed cassettes with batch orientation and surface inspection data.

### Nominal Properties
- **Formula & CAS #:** MgAl2O4 (CAS 1306-44-1)
- **Crystal System / Grade:** Cubic Spinel (Fd-3m, a = 8.083 Å) · Czochralski Single Crystal 4N (99.99%)
- **Density:** 3.58 g/cm³
- **Standard Orientations:** <100>, <110>, <111>
- **Surface Finish (CMP):** Ra < 0.3 nm Epi-Ready CMP (SSP / DSP)

### Applications
- Epitaxial growth of spinel ferrites (Fe3O4, NiFe2O4, CoFe2O4) for magnonics and spintronics
- Non-birefringent UV-VIS-MWIR multispectral optical windows
- Lattice-matched substrate for cubic/hexagonal nitrides and oxides
- High-strength radiation-resistant sensor substrates

### Buyer Specification Guide
Specify MgAl2O4 crystallographic orientation (<100>, <110>, <111>), dimensions and thickness (e.g., 10×10×0.5 mm or Ø 2" × 0.5 mm), SSP vs. DSP polish, edge orientation, and pack count.

### Technical FAQs
- **Q: Are magnesium aluminate spinel (MgAl2O4) substrates & windows (MgAl2O4) substrates ready for epitaxial deposition out of the box?**
  A: Yes. All epi-ready substrates are final CMP-polished and packaged in cleanroom waffle packs or sealed containers with sub-nanometer Ra roughness.
- **Q: What tolerances apply to 10×10×0.5 mm diced MgAl2O4 substrates?**
  A: Standard lateral dimensions are ±0.05–0.10 mm, thickness is ±0.02–0.05 mm, and crystal axis orientation accuracy is within ±0.5° (or ±0.1° on custom request).
- **Q: Can I order custom sizes, thicknesses, or double-side polishing for TB-SUB-SPN?**
  A: Yes. Both single-side (SSP) and double-side (DSP) polished substrates as well as custom laser/wire-saw diced dimensions can be quoted with no high minimum order quantity.

---
## Single-Crystal Quartz (AT-Cut, ST-Cut, X/Y/Z-Cut) Substrates & Windows (`TB-SUB-QZC`)
- **URL:** https://tensilebase.com/products/crystal-quartz-st-at-z-cut-substrates/
- **Quote URL:** https://tensilebase.com/quote.html?product=crystal-quartz-st-at-z-cut-substrates
- **Category:** Fused Quartz & Substrates
- **Chemical Formula:** α-SiO2 (Single Crystal) (Elements: Si, O)
- **CAS Registry Number:** 14808-60-7
- **Synonyms:** Epi-ready α-SiO2 (Single Crystal) single crystal wafer, Single-Crystal quartz (AT-Cut, ST-Cut, X/Y/Z-Cut) substrates & windows thin-film growth substrate, Z-Cut (0001), X-Cut, Y-Cut, AT-Cut (35°15'), ST-Cut (42°45') α-SiO2 (Single Crystal)
- **Purity / Grades:** Hydrothermal Cultured Electronic & Optical Grade Single Crystal
- **Typical Dimensions:** 10×10 mm, 5×5 mm, 10×5 mm, Ø 1", Ø 2", Ø 3", Ø 4" × 0.5 mm / 1.0 mm
- **Configurations:** 1-Side (SSP) or 2-Side (DSP) Epi-Ready CMP Polish; Cleanroom 100 Pack
- **Typical Lead Time:** 5–12 business days
- **Documentation Included:** Manufacturer Lot COA (crystal orientation X-ray verification, surface roughness Ra, thickness tolerance, and resistivity/doping if applicable).

### Technical Overview
Precision-grown and chemical-mechanical-polished (CMP) in a Class 100 cleanroom, our Single-Crystal quartz (AT-Cut, ST-Cut, X/Y/Z-Cut) substrates & windows (α-SiO2 (Single Crystal), CAS 14808-60-7) substrates provide atomically smooth, epi-ready surfaces (Ra < 0.2–0.5 nm) for thin-film epitaxy, pulsed laser deposition (PLD), magnetron sputtering, molecular beam epitaxy (MBE), and optical characterization.

Unlike amorphous fused silica, hydrothermal single-crystal α-quartz exhibits piezoelectricity, optical birefringence, and high crystalline thermal conductivity along the Z-axis (~10–12 W/m·K at RT, rising sharply at cryogenic temperatures). Standard research sizes include 5×5 mm, 10×10 mm, and 15×15 mm diced squares (0.5 mm or 1.0 mm thick) as well as Ø 1-inch, 2-inch, 3-inch, and 4-inch wafers in single-side (SSP) or double-side (DSP) polished finishes, packed in individual waffle trays or nitrogen-sealed cassettes with batch orientation and surface inspection data.

### Nominal Properties
- **Formula & CAS #:** α-SiO2 (Single Crystal) (CAS 14808-60-7)
- **Crystal System / Grade:** Trigonal (α-Quartz, P3₁21) · Hydrothermal Cultured Electronic & Optical Grade Single Crystal
- **Density:** 2.65 g/cm³
- **Standard Orientations:** Z-Cut (0001), X-Cut, Y-Cut, AT-Cut (35°15'), ST-Cut (42°45')
- **Surface Finish (CMP):** Ra < 0.3 nm Double-Side Optical & SAW Polish

### Applications
- Temperature-compensated ST-cut and AT-cut SAW/BAW piezoelectric resonators and delay lines
- Zero-order and multi-order optical waveplates and polarization optics
- Cryogenic THz optics and low-loss high-thermal-conductivity quantum substrates
- Epitaxial 2D material and oxide growth on crystalline SiO2

### Buyer Specification Guide
Specify α-SiO2 (Single Crystal) crystallographic orientation (Z-Cut (0001), X-Cut, Y-Cut, AT-Cut (35°15'), ST-Cut (42°45')), dimensions and thickness (e.g., 10×10×0.5 mm or Ø 2" × 0.5 mm), SSP vs. DSP polish, edge orientation, and pack count.

### Technical FAQs
- **Q: Are Single-Crystal quartz (AT-Cut, ST-Cut, X/Y/Z-Cut) substrates & windows (α-SiO2 (Single Crystal)) substrates ready for epitaxial deposition out of the box?**
  A: Yes. All epi-ready substrates are final CMP-polished and packaged in cleanroom waffle packs or sealed containers with sub-nanometer Ra roughness.
- **Q: What tolerances apply to 10×10×0.5 mm diced α-SiO2 (Single Crystal) substrates?**
  A: Standard lateral dimensions are ±0.05–0.10 mm, thickness is ±0.02–0.05 mm, and crystal axis orientation accuracy is within ±0.5° (or ±0.1° on custom request).
- **Q: Can I order custom sizes, thicknesses, or double-side polishing for TB-SUB-QZC?**
  A: Yes. Both single-side (SSP) and double-side (DSP) polished substrates as well as custom laser/wire-saw diced dimensions can be quoted with no high minimum order quantity.

---
## CaF2, BaF2 & MgF2 UV / Infrared Crystal Windows & Substrates (`TB-SUB-CAF2`)
- **URL:** https://tensilebase.com/products/calcium-barium-fluoride-ir-uv-windows/
- **Quote URL:** https://tensilebase.com/quote.html?product=calcium-barium-fluoride-ir-uv-windows
- **Category:** Fused Quartz & Substrates
- **Chemical Formula:** CaF2 / BaF2 / MgF2 (Elements: Ca, Ba, Mg, F)
- **CAS Registry Number:** 7789-75-5
- **Synonyms:** Epi-ready CaF2 / BaF2 / MgF2 single crystal wafer, CaF2, BaF2 & MgF2 UV / infrared crystal windows & substrates thin-film growth substrate, <111>, <100>, or Random Optical Cut (MgF2 c-axis <001> for zero birefringence) CaF2 / BaF2 / MgF2
- **Purity / Grades:** Vacuum Bridgman Single-Crystal UV / VUV / IR Excimer Grade
- **Typical Dimensions:** 10×10 mm, 5×5 mm, 10×5 mm, Ø 1", Ø 2", Ø 3", Ø 4" × 0.5 mm / 1.0 mm
- **Configurations:** 1-Side (SSP) or 2-Side (DSP) Epi-Ready CMP Polish; Cleanroom 100 Pack
- **Typical Lead Time:** 5–12 business days
- **Documentation Included:** Manufacturer Lot COA (crystal orientation X-ray verification, surface roughness Ra, thickness tolerance, and resistivity/doping if applicable).

### Technical Overview
Precision-grown and chemical-mechanical-polished (CMP) in a Class 100 cleanroom, our CaF2, BaF2 & MgF2 UV / infrared crystal windows & substrates (CaF2 / BaF2 / MgF2, CAS 7789-75-5) substrates provide atomically smooth, epi-ready surfaces (Ra < 0.2–0.5 nm) for thin-film epitaxy, pulsed laser deposition (PLD), magnetron sputtering, molecular beam epitaxy (MBE), and optical characterization.

Bridgman-grown alkaline-earth fluoride crystals transmit continuously from the vacuum-UV (120–135 nm) to the mid/long-wave infrared (8–12 µm) with ultra-low refractive index and minimal chromatic dispersion. Standard research sizes include 5×5 mm, 10×10 mm, and 15×15 mm diced squares (0.5 mm or 1.0 mm thick) as well as Ø 1-inch, 2-inch, 3-inch, and 4-inch wafers in single-side (SSP) or double-side (DSP) polished finishes, packed in individual waffle trays or nitrogen-sealed cassettes with batch orientation and surface inspection data.

### Nominal Properties
- **Formula & CAS #:** CaF2 / BaF2 / MgF2 (CAS 7789-75-5)
- **Crystal System / Grade:** Cubic Fluorite (CaF2, BaF2) / Tetragonal Rutile (MgF2) · Vacuum Bridgman Single-Crystal UV / VUV / IR Excimer Grade
- **Density:** 3.18 (CaF2) / 4.89 (BaF2) / 3.18 (MgF2) g/cm³
- **Standard Orientations:** <111>, <100>, or Random Optical Cut (MgF2 c-axis <001> for zero birefringence)
- **Surface Finish (CMP):** 20-10 or 10-5 Scratch-Dig Double-Side Optical Polish; Ø 12.7 mm, 25.4 mm, 50.8 mm & 10×10 mm

### Applications
- FTIR spectroscopy cell windows, ATR prisms, and thermal-imaging viewports (CaF2 0.13–10 µm; BaF2 0.15–12 µm)
- Raman spectroscopy substrates with virtually zero background fluorescence (Raman-grade CaF2)
- Deep-UV excimer laser (157 nm F2, 193 nm ArF, 248 nm KrF) optics and windows
- Epitaxial fluoride and IV-VI mid-IR semiconductor (PbSe/PbTe) growth substrates

### Buyer Specification Guide
Specify CaF2 / BaF2 / MgF2 crystallographic orientation (<111>, <100>, or Random Optical Cut (MgF2 c-axis <001> for zero birefringence)), dimensions and thickness (e.g., 10×10×0.5 mm or Ø 2" × 0.5 mm), SSP vs. DSP polish, edge orientation, and pack count.

### Technical FAQs
- **Q: Are CaF2, BaF2 & MgF2 UV / infrared crystal windows & substrates (CaF2 / BaF2 / MgF2) substrates ready for epitaxial deposition out of the box?**
  A: Yes. All epi-ready substrates are final CMP-polished and packaged in cleanroom waffle packs or sealed containers with sub-nanometer Ra roughness.
- **Q: What tolerances apply to 10×10×0.5 mm diced CaF2 / BaF2 / MgF2 substrates?**
  A: Standard lateral dimensions are ±0.05–0.10 mm, thickness is ±0.02–0.05 mm, and crystal axis orientation accuracy is within ±0.5° (or ±0.1° on custom request).
- **Q: Can I order custom sizes, thicknesses, or double-side polishing for TB-SUB-CAF2?**
  A: Yes. Both single-side (SSP) and double-side (DSP) polished substrates as well as custom laser/wire-saw diced dimensions can be quoted with no high minimum order quantity.

---
## Borosilicate (Borofloat 33), Alkali-Free Display & FTO/ITO Glass Substrates (`TB-SUB-GLS`)
- **URL:** https://tensilebase.com/products/borosilicate-b270-af32-eagle-xg-glass-wafers/
- **Quote URL:** https://tensilebase.com/quote.html?product=borosilicate-b270-af32-eagle-xg-glass-wafers
- **Category:** Fused Quartz & Substrates
- **Chemical Formula:** SiO2-B2O3-Al2O3 / ITO-Glass / FTO-Glass (Elements: Si, B, Al, In, Sn, O)
- **CAS Registry Number:** 65997-17-3
- **Synonyms:** Epi-ready SiO2-B2O3-Al2O3 / ITO-Glass / FTO-Glass single crystal wafer, borosilicate (borofloat 33), Alkali-Free display & FTO/ITO glass substrates thin-film growth substrate, Ø 2", 3", 4", 6" Glass Wafers (0.5 / 0.7 / 1.0 mm) & Pre-Scored 25×25 mm / 15×15 mm TCO Slides SiO2-B2O3-Al2O3 / ITO-Glass / FTO-Glass
- **Purity / Grades:** Schott Borofloat 33, Alkali-Free Display Glass, & Pre-Coated ITO/FTO Research Slides
- **Typical Dimensions:** 10×10 mm, 5×5 mm, 10×5 mm, Ø 1", Ø 2", Ø 3", Ø 4" × 0.5 mm / 1.0 mm
- **Configurations:** 1-Side (SSP) or 2-Side (DSP) Epi-Ready CMP Polish; Cleanroom 100 Pack
- **Typical Lead Time:** 5–12 business days
- **Documentation Included:** Manufacturer Lot COA (crystal orientation X-ray verification, surface roughness Ra, thickness tolerance, and resistivity/doping if applicable).

### Technical Overview
Precision-grown and chemical-mechanical-polished (CMP) in a Class 100 cleanroom, our borosilicate (borofloat 33), Alkali-Free display & FTO/ITO glass substrates (SiO2-B2O3-Al2O3 / ITO-Glass / FTO-Glass, CAS 65997-17-3) substrates provide atomically smooth, epi-ready surfaces (Ra < 0.2–0.5 nm) for thin-film epitaxy, pulsed laser deposition (PLD), magnetron sputtering, molecular beam epitaxy (MBE), and optical characterization.

Engineered for MEMS anodic bonding, microfluidics, and photovoltaic device prototyping, we supply both bare low-CTE borosilicate/alkali-free glass wafers and pre-patterned or full-sheet ITO/FTO conductive glass slides. Standard research sizes include 5×5 mm, 10×10 mm, and 15×15 mm diced squares (0.5 mm or 1.0 mm thick) as well as Ø 1-inch, 2-inch, 3-inch, and 4-inch wafers in single-side (SSP) or double-side (DSP) polished finishes, packed in individual waffle trays or nitrogen-sealed cassettes with batch orientation and surface inspection data.

### Nominal Properties
- **Formula & CAS #:** SiO2-B2O3-Al2O3 / ITO-Glass / FTO-Glass (CAS 65997-17-3)
- **Crystal System / Grade:** Amorphous Optical Glass · Schott Borofloat 33, Alkali-Free Display Glass, & Pre-Coated ITO/FTO Research Slides
- **Density:** 2.23 (Borofloat 33) / 2.38–2.51 g/cm³
- **Standard Orientations:** Ø 2", 3", 4", 6" Glass Wafers (0.5 / 0.7 / 1.0 mm) & Pre-Scored 25×25 mm / 15×15 mm TCO Slides
- **Surface Finish (CMP):** Optical Fire/CMP Finish + Optional 7–15 Ω/sq ITO or FTO Conductive Coating

### Applications
- Anodic bonding to silicon wafers in MEMS pressure sensors and hermetically sealed packages (Borofloat 33 CTE 3.25 ppm/K)
- Perovskite, organic (OPV), and dye-sensitized solar cell prototyping on pre-cut 7–15 Ω/sq ITO & FTO glass
- Microfluidic lab-on-a-chip channels and bio-optical fluorescence slides
- Thin-film PVD/ALD optical transmission witness slides

### Buyer Specification Guide
Specify SiO2-B2O3-Al2O3 / ITO-Glass / FTO-Glass crystallographic orientation (Ø 2", 3", 4", 6" Glass Wafers (0.5 / 0.7 / 1.0 mm) & Pre-Scored 25×25 mm / 15×15 mm TCO Slides), dimensions and thickness (e.g., 10×10×0.5 mm or Ø 2" × 0.5 mm), SSP vs. DSP polish, edge orientation, and pack count.

### Technical FAQs
- **Q: Are borosilicate (borofloat 33), Alkali-Free display & FTO/ITO glass substrates (SiO2-B2O3-Al2O3 / ITO-Glass / FTO-Glass) substrates ready for epitaxial deposition out of the box?**
  A: Yes. All epi-ready substrates are final CMP-polished and packaged in cleanroom waffle packs or sealed containers with sub-nanometer Ra roughness.
- **Q: What tolerances apply to 10×10×0.5 mm diced SiO2-B2O3-Al2O3 / ITO-Glass / FTO-Glass substrates?**
  A: Standard lateral dimensions are ±0.05–0.10 mm, thickness is ±0.02–0.05 mm, and crystal axis orientation accuracy is within ±0.5° (or ±0.1° on custom request).
- **Q: Can I order custom sizes, thicknesses, or double-side polishing for TB-SUB-GLS?**
  A: Yes. Both single-side (SSP) and double-side (DSP) polished substrates as well as custom laser/wire-saw diced dimensions can be quoted with no high minimum order quantity.

---
## High-Purity Tungsten (W) Crucibles & Sapphire Growth Vessels (`TB-W-CRU`)
- **URL:** https://tensilebase.com/products/tungsten-crucibles-melt-growth-liners/
- **Quote URL:** https://tensilebase.com/quote.html?product=tungsten-crucibles-melt-growth-liners
- **Category:** Refractory Metals
- **Chemical Formula:** W (Elements: W)
- **CAS Registry Number:** 7440-33-7
- **Synonyms:** High-purity W refractory metal, vacuum furnace High-Purity tungsten (w) crucibles & sapphire growth vessels, 3N5 (99.95%) / 4N (99.99%) CIP-Sintered, Forged, or Spun W
- **Purity / Grades:** 3N5 (99.95%) / 4N (99.99%) CIP-Sintered, Forged, or Spun
- **Typical Dimensions:** OD 10–400 mm × Wall 1.5–15 mm (Sintered-machined, forged, or seamless spun)
- **Configurations:** Standard mill stock & precision CNC / wire-EDM custom machining to drawing
- **Typical Lead Time:** 7–15 business days
- **Documentation Included:** Manufacturer Mill Test Certificate / Batch COA (chemical purity and interstitial O, N, C, H ppm analysis) plus dimensional inspection report.

### Technical Overview
Consolidated by powder metallurgy, vacuum arc remelting (VAR), or electron-beam melting and stress-relieved for high-temperature dimensional stability, our High-Purity tungsten (w) crucibles & sapphire growth vessels (W, CAS 7440-33-7) products deliver reliable performance in vacuum, inert-gas, and reducing furnace atmospheres.

With the highest melting point of any pure metal (3,422 °C) and low vapor pressure, high-density tungsten crucibles are essential for sapphire crystal growth, rare-earth metal melting, and ultra-high-temperature vacuum sintering. Every shipment includes the producing mill's chemical purity Certificate of Analysis (reporting metallic and interstitial O, N, C, H trace levels in ppm) and pre-shipment dimensional verification.

### Nominal Properties
- **Composition & CAS #:** W (CAS 7440-33-7)
- **Purity / Alloy Grade:** 3N5 (99.95%) / 4N (99.99%) CIP-Sintered, Forged, or Spun
- **Density:** 18.2–19.2 g/cm³
- **Melting Point:** 3,422 °C
- **Available Mill & Machined Forms:** OD 10–400 mm × Wall 1.5–15 mm (Sintered-machined, forged, or seamless spun)

### Applications
- Kyropoulos, HEM, and Czochralski single-crystal sapphire (α-Al2O3) melt growth
- Vacuum induction and resistance melting of rare-earth metals and high-purity alloys
- E-beam evaporation hearth pocket liners and thermal sublimation cells
- 2,000–2,800 °C vacuum furnace sintering containers

### Buyer Specification Guide
Specify W purity or alloy grade (3N5 (99.95%) / 4N (99.99%) CIP-Sintered, Forged, or Spun), form and dimensions (OD 10–400 mm × Wall 1.5–15 mm (Sintered-machined, forged, or seamless spun)), surface finish (rolled, ground, electropolished, or chemically cleaned), and quantity.

### Technical FAQs
- **Q: What atmosphere is required when operating High-Purity tungsten (w) crucibles & sapphire growth vessels (W) at high temperature?**
  A: Refractory metals oxidize in air above 400–500 °C; operate in high vacuum (≤10⁻⁴ Torr), high-purity argon/helium, or reducing hydrogen/forming-gas atmospheres.
- **Q: Can TB-W-CRU be custom machined to our engineering print?**
  A: Yes. Attach a STEP/DXF/PDF drawing on the RFQ page for precision CNC turning, milling, wire-EDM, laser cutting, or forming with small-batch R&D minimums.
- **Q: What certification ships with High-Purity tungsten (w) crucibles & sapphire growth vessels?**
  A: All shipments include the producing mill's batch chemical Certificate of Analysis (ICP/GDMS trace impurities and interstitial gas content) and dimensional verification.

---
## Pure & Doped Tungsten (W, WL15, WL20, WC20) Rods & Electrodes (`TB-W-ROD`)
- **URL:** https://tensilebase.com/products/tungsten-rods-electrodes-lanthanated-ceriated/
- **Quote URL:** https://tensilebase.com/quote.html?product=tungsten-rods-electrodes-lanthanated-ceriated
- **Category:** Refractory Metals
- **Chemical Formula:** W / W-La2O3 / W-CeO2 / W-Y2O3 (Elements: W, La, Ce)
- **CAS Registry Number:** 7440-33-7
- **Synonyms:** High-purity W / W-La2O3 / W-CeO2 / W-Y2O3 refractory metal, vacuum furnace pure & doped tungsten (w, WL15, WL20, WC20) rods & electrodes, 99.95% Pure W & Non-Radioactive Lanthanated (1.5–2% La2O3) / Ceriated (2% CeO2) W / W-La2O3 / W-CeO2 / W-Y2O3
- **Purity / Grades:** 99.95% Pure W & Non-Radioactive Lanthanated (1.5–2% La2O3) / Ceriated (2% CeO2)
- **Typical Dimensions:** Ø 0.5 mm to Ø 80 mm × Lengths up to 1,000 mm (Centerless Ground h7/h9)
- **Configurations:** Standard mill stock & precision CNC / wire-EDM custom machining to drawing
- **Typical Lead Time:** 7–15 business days
- **Documentation Included:** Manufacturer Mill Test Certificate / Batch COA (chemical purity and interstitial O, N, C, H ppm analysis) plus dimensional inspection report.

### Technical Overview
Consolidated by powder metallurgy, vacuum arc remelting (VAR), or electron-beam melting and stress-relieved for high-temperature dimensional stability, our pure & doped tungsten (w, WL15, WL20, WC20) rods & electrodes (W / W-La2O3 / W-CeO2 / W-Y2O3, CAS 7440-33-7) products deliver reliable performance in vacuum, inert-gas, and reducing furnace atmospheres.

Swaged and centerless-ground tungsten rods and non-radioactive rare-earth-oxide doped electrodes (WL15, WL20, WC20) provide low work function (~2.7–3.0 eV), superior arc ignition, and high creep resistance. Every shipment includes the producing mill's chemical purity Certificate of Analysis (reporting metallic and interstitial O, N, C, H trace levels in ppm) and pre-shipment dimensional verification.

### Nominal Properties
- **Composition & CAS #:** W / W-La2O3 / W-CeO2 / W-Y2O3 (CAS 7440-33-7)
- **Purity / Alloy Grade:** 99.95% Pure W & Non-Radioactive Lanthanated (1.5–2% La2O3) / Ceriated (2% CeO2)
- **Density:** 19.25 g/cm³
- **Melting Point:** 3,422 °C
- **Available Mill & Machined Forms:** Ø 0.5 mm to Ø 80 mm × Lengths up to 1,000 mm (Centerless Ground h7/h9)

### Applications
- Plasma torch cathodes, arc-melting stingers, and vacuum furnace feedthrough studs
- Ion-implantation source chambers and electron-emitter cathode rods
- High-stiffness boring bars, EDM electrodes, and precision balance weights
- High-temperature furnace support pins and structural tie rods

### Buyer Specification Guide
Specify W / W-La2O3 / W-CeO2 / W-Y2O3 purity or alloy grade (99.95% Pure W & Non-Radioactive Lanthanated (1.5–2% La2O3) / Ceriated (2% CeO2)), form and dimensions (Ø 0.5 mm to Ø 80 mm × Lengths up to 1,000 mm (Centerless Ground h7/h9)), surface finish (rolled, ground, electropolished, or chemically cleaned), and quantity.

### Technical FAQs
- **Q: What atmosphere is required when operating pure & doped tungsten (w, WL15, WL20, WC20) rods & electrodes (W / W-La2O3 / W-CeO2 / W-Y2O3) at high temperature?**
  A: Refractory metals oxidize in air above 400–500 °C; operate in high vacuum (≤10⁻⁴ Torr), high-purity argon/helium, or reducing hydrogen/forming-gas atmospheres.
- **Q: Can TB-W-ROD be custom machined to our engineering print?**
  A: Yes. Attach a STEP/DXF/PDF drawing on the RFQ page for precision CNC turning, milling, wire-EDM, laser cutting, or forming with small-batch R&D minimums.
- **Q: What certification ships with pure & doped tungsten (w, WL15, WL20, WC20) rods & electrodes?**
  A: All shipments include the producing mill's batch chemical Certificate of Analysis (ICP/GDMS trace impurities and interstitial gas content) and dimensional verification.

---
## High-Purity Tungsten (W) Foil, Sheet, Plate & Evaporation Ribbon (`TB-W-SH`)
- **URL:** https://tensilebase.com/products/tungsten-foil-sheet-ribbon/
- **Quote URL:** https://tensilebase.com/quote.html?product=tungsten-foil-sheet-ribbon
- **Category:** Refractory Metals
- **Chemical Formula:** W (Elements: W)
- **CAS Registry Number:** 7440-33-7
- **Synonyms:** High-purity W refractory metal, vacuum furnace High-Purity tungsten (w) foil, sheet, plate & evaporation ribbon, 3N5 (99.95%) / 4N (99.99%) Warm/Cold-Rolled & Stress-Relieved W
- **Purity / Grades:** 3N5 (99.95%) / 4N (99.99%) Warm/Cold-Rolled & Stress-Relieved
- **Typical Dimensions:** Foil 0.025–0.5 mm; Sheet 0.5–3.0 mm; Plate 3.0–25 mm (Alkali-Cleaned or Ground)
- **Configurations:** Standard mill stock & precision CNC / wire-EDM custom machining to drawing
- **Typical Lead Time:** 7–15 business days
- **Documentation Included:** Manufacturer Mill Test Certificate / Batch COA (chemical purity and interstitial O, N, C, H ppm analysis) plus dimensional inspection report.

### Technical Overview
Consolidated by powder metallurgy, vacuum arc remelting (VAR), or electron-beam melting and stress-relieved for high-temperature dimensional stability, our High-Purity tungsten (w) foil, sheet, plate & evaporation ribbon (W, CAS 7440-33-7) products deliver reliable performance in vacuum, inert-gas, and reducing furnace atmospheres.

Cross-rolled to fine laminar microstructure and chemically cleaned, tungsten foil and sheet serve as inner-layer radiation heat shields above 1,800 °C, setter trays, X-ray collimators, and resistive evaporation ribbons. Every shipment includes the producing mill's chemical purity Certificate of Analysis (reporting metallic and interstitial O, N, C, H trace levels in ppm) and pre-shipment dimensional verification.

### Nominal Properties
- **Composition & CAS #:** W (CAS 7440-33-7)
- **Purity / Alloy Grade:** 3N5 (99.95%) / 4N (99.99%) Warm/Cold-Rolled & Stress-Relieved
- **Density:** 19.25 g/cm³
- **Melting Point:** 3,422 °C
- **Available Mill & Machined Forms:** Foil 0.025–0.5 mm; Sheet 0.5–3.0 mm; Plate 3.0–25 mm (Alkali-Cleaned or Ground)

### Applications
- Innermost hot-zone radiation heat shields in 2,000–2,800 °C vacuum furnaces
- Sintering setter plates for AlN, Si3N4, and refractory metal injection-molded (MIM) parts
- High-Z X-ray, gamma-ray, and electron-beam radiation collimator plates
- Resistive thermal evaporation ribbons and custom stamped heater elements

### Buyer Specification Guide
Specify W purity or alloy grade (3N5 (99.95%) / 4N (99.99%) Warm/Cold-Rolled & Stress-Relieved), form and dimensions (Foil 0.025–0.5 mm; Sheet 0.5–3.0 mm; Plate 3.0–25 mm (Alkali-Cleaned or Ground)), surface finish (rolled, ground, electropolished, or chemically cleaned), and quantity.

### Technical FAQs
- **Q: What atmosphere is required when operating High-Purity tungsten (w) foil, sheet, plate & evaporation ribbon (W) at high temperature?**
  A: Refractory metals oxidize in air above 400–500 °C; operate in high vacuum (≤10⁻⁴ Torr), high-purity argon/helium, or reducing hydrogen/forming-gas atmospheres.
- **Q: Can TB-W-SH be custom machined to our engineering print?**
  A: Yes. Attach a STEP/DXF/PDF drawing on the RFQ page for precision CNC turning, milling, wire-EDM, laser cutting, or forming with small-batch R&D minimums.
- **Q: What certification ships with High-Purity tungsten (w) foil, sheet, plate & evaporation ribbon?**
  A: All shipments include the producing mill's batch chemical Certificate of Analysis (ICP/GDMS trace impurities and interstitial gas content) and dimensional verification.

---
## Pure & Potassium-Doped Non-Sag Tungsten (W / AKS) Wire & Heater Coils (`TB-W-WR`)
- **URL:** https://tensilebase.com/products/tungsten-wire-stranded-heater-filaments/
- **Quote URL:** https://tensilebase.com/quote.html?product=tungsten-wire-stranded-heater-filaments
- **Category:** Refractory Metals
- **Chemical Formula:** W / AKS-Doped W / W3Re (Elements: W, Re)
- **CAS Registry Number:** 7440-33-7
- **Synonyms:** High-purity W / AKS-Doped W / W3Re refractory metal, vacuum furnace pure & Potassium-Doped Non-Sag tungsten (w / AKS) wire & heater coils, 99.95% Pure W, Potassium-Doped Non-Sag (AKS), & W-3%Re Ductile Grade W / AKS-Doped W / W3Re
- **Purity / Grades:** 99.95% Pure W, Potassium-Doped Non-Sag (AKS), & W-3%Re Ductile Grade
- **Typical Dimensions:** Ø 0.015 mm to Ø 3.0 mm Spools, Straightened Cut Lengths, & Multi-Strand Twisted Coils
- **Configurations:** Standard mill stock & precision CNC / wire-EDM custom machining to drawing
- **Typical Lead Time:** 7–15 business days
- **Documentation Included:** Manufacturer Mill Test Certificate / Batch COA (chemical purity and interstitial O, N, C, H ppm analysis) plus dimensional inspection report.

### Technical Overview
Consolidated by powder metallurgy, vacuum arc remelting (VAR), or electron-beam melting and stress-relieved for high-temperature dimensional stability, our pure & Potassium-Doped Non-Sag tungsten (w / AKS) wire & heater coils (W / AKS-Doped W / W3Re, CAS 7440-33-7) products deliver reliable performance in vacuum, inert-gas, and reducing furnace atmospheres.

Drawn with interlocking potassium-doped (AKS) grain boundaries or 3% rhenium alloyed for post-recrystallization ductility, our tungsten wires resist sag at incandescent temperatures above 2,200 °C. Every shipment includes the producing mill's chemical purity Certificate of Analysis (reporting metallic and interstitial O, N, C, H trace levels in ppm) and pre-shipment dimensional verification.

### Nominal Properties
- **Composition & CAS #:** W / AKS-Doped W / W3Re (CAS 7440-33-7)
- **Purity / Alloy Grade:** 99.95% Pure W, Potassium-Doped Non-Sag (AKS), & W-3%Re Ductile Grade
- **Density:** 19.25 g/cm³
- **Melting Point:** 3,422 °C
- **Available Mill & Machined Forms:** Ø 0.015 mm to Ø 3.0 mm Spools, Straightened Cut Lengths, & Multi-Strand Twisted Coils

### Applications
- Multi-strand twisted tungsten basket, helical, and hairpin PVD evaporation filaments
- Hot-filament CVD (HFCVD) diamond reactor arrays
- Thermionic electron-gun emitters, ion-gauge filaments, and mass-spectrometer sources
- High-temperature furnace heating elements and fine wire-saw/probe pins

### Buyer Specification Guide
Specify W / AKS-Doped W / W3Re purity or alloy grade (99.95% Pure W, Potassium-Doped Non-Sag (AKS), & W-3%Re Ductile Grade), form and dimensions (Ø 0.015 mm to Ø 3.0 mm Spools, Straightened Cut Lengths, & Multi-Strand Twisted Coils), surface finish (rolled, ground, electropolished, or chemically cleaned), and quantity.

### Technical FAQs
- **Q: What atmosphere is required when operating pure & Potassium-Doped Non-Sag tungsten (w / AKS) wire & heater coils (W / AKS-Doped W / W3Re) at high temperature?**
  A: Refractory metals oxidize in air above 400–500 °C; operate in high vacuum (≤10⁻⁴ Torr), high-purity argon/helium, or reducing hydrogen/forming-gas atmospheres.
- **Q: Can TB-W-WR be custom machined to our engineering print?**
  A: Yes. Attach a STEP/DXF/PDF drawing on the RFQ page for precision CNC turning, milling, wire-EDM, laser cutting, or forming with small-batch R&D minimums.
- **Q: What certification ships with pure & Potassium-Doped Non-Sag tungsten (w / AKS) wire & heater coils?**
  A: All shipments include the producing mill's batch chemical Certificate of Analysis (ICP/GDMS trace impurities and interstitial gas content) and dimensional verification.

---
## Molybdenum & Mo-La (ODS) Crucibles, Sintering Boats & Trays (`TB-MO-CRU`)
- **URL:** https://tensilebase.com/products/molybdenum-crucibles-sintering-trays/
- **Quote URL:** https://tensilebase.com/quote.html?product=molybdenum-crucibles-sintering-trays
- **Category:** Refractory Metals
- **Chemical Formula:** Mo / Mo-La2O3 (Elements: Mo, La)
- **CAS Registry Number:** 7439-98-7
- **Synonyms:** High-purity Mo / Mo-La2O3 refractory metal, vacuum furnace molybdenum & Mo-La (ODS) crucibles, sintering boats & trays, 99.95% Pure Mo & Lanthanated ODS Mo-La (0.3–0.7 wt% La2O3) Mo / Mo-La2O3
- **Purity / Grades:** 99.95% Pure Mo & Lanthanated ODS Mo-La (0.3–0.7 wt% La2O3)
- **Typical Dimensions:** Crucibles OD 10–350 mm; Riveted/Folded/Machined Sintering Boats & Pusher Trays
- **Configurations:** Standard mill stock & precision CNC / wire-EDM custom machining to drawing
- **Typical Lead Time:** 7–15 business days
- **Documentation Included:** Manufacturer Mill Test Certificate / Batch COA (chemical purity and interstitial O, N, C, H ppm analysis) plus dimensional inspection report.

### Technical Overview
Consolidated by powder metallurgy, vacuum arc remelting (VAR), or electron-beam melting and stress-relieved for high-temperature dimensional stability, our molybdenum & Mo-La (ODS) crucibles, sintering boats & trays (Mo / Mo-La2O3, CAS 7439-98-7) products deliver reliable performance in vacuum, inert-gas, and reducing furnace atmospheres.

Pure molybdenum and lanthanum-oxide dispersion-strengthened (Mo-La) boats and crucibles resist grain-boundary embrittlement and creep up to 1,900 °C in hydrogen, cracked-ammonia, and vacuum furnaces. Every shipment includes the producing mill's chemical purity Certificate of Analysis (reporting metallic and interstitial O, N, C, H trace levels in ppm) and pre-shipment dimensional verification.

### Nominal Properties
- **Composition & CAS #:** Mo / Mo-La2O3 (CAS 7439-98-7)
- **Purity / Alloy Grade:** 99.95% Pure Mo & Lanthanated ODS Mo-La (0.3–0.7 wt% La2O3)
- **Density:** 10.22 g/cm³
- **Melting Point:** 2,623 °C
- **Available Mill & Machined Forms:** Crucibles OD 10–350 mm; Riveted/Folded/Machined Sintering Boats & Pusher Trays

### Applications
- Continuous hydrogen pusher-furnace sintering boats for UO2, tungsten carbide, and MIM parts
- Rare-earth magnet (NdFeB), phosphor, and ceramic calcination/sintering trays
- Sapphire, fluoride, and oxide crystal growth crucibles
- High-temperature vacuum brazing fixtures and carrier boats

### Buyer Specification Guide
Specify Mo / Mo-La2O3 purity or alloy grade (99.95% Pure Mo & Lanthanated ODS Mo-La (0.3–0.7 wt% La2O3)), form and dimensions (Crucibles OD 10–350 mm; Riveted/Folded/Machined Sintering Boats & Pusher Trays), surface finish (rolled, ground, electropolished, or chemically cleaned), and quantity.

### Technical FAQs
- **Q: What atmosphere is required when operating molybdenum & Mo-La (ODS) crucibles, sintering boats & trays (Mo / Mo-La2O3) at high temperature?**
  A: Refractory metals oxidize in air above 400–500 °C; operate in high vacuum (≤10⁻⁴ Torr), high-purity argon/helium, or reducing hydrogen/forming-gas atmospheres.
- **Q: Can TB-MO-CRU be custom machined to our engineering print?**
  A: Yes. Attach a STEP/DXF/PDF drawing on the RFQ page for precision CNC turning, milling, wire-EDM, laser cutting, or forming with small-batch R&D minimums.
- **Q: What certification ships with molybdenum & Mo-La (ODS) crucibles, sintering boats & trays?**
  A: All shipments include the producing mill's batch chemical Certificate of Analysis (ICP/GDMS trace impurities and interstitial gas content) and dimensional verification.

---
## High-Purity Molybdenum (Mo) Foil, Sheet, Plate & Discs (`TB-MO-SH`)
- **URL:** https://tensilebase.com/products/molybdenum-foil-sheet-radiation-shields/
- **Quote URL:** https://tensilebase.com/quote.html?product=molybdenum-foil-sheet-radiation-shields
- **Category:** Refractory Metals
- **Chemical Formula:** Mo (Elements: Mo)
- **CAS Registry Number:** 7439-98-7
- **Synonyms:** High-purity Mo refractory metal, vacuum furnace High-Purity molybdenum (mo) foil, sheet, plate & discs, 3N5 (99.95%) / 4N (99.99%) Cross-Rolled & Annealed Mo
- **Purity / Grades:** 3N5 (99.95%) / 4N (99.99%) Cross-Rolled & Annealed
- **Typical Dimensions:** Foil 0.025–0.5 mm; Sheet 0.5–3.0 mm; Plate 3.0–40 mm; Stamped/Laser-Cut Discs
- **Configurations:** Standard mill stock & precision CNC / wire-EDM custom machining to drawing
- **Typical Lead Time:** 7–15 business days
- **Documentation Included:** Manufacturer Mill Test Certificate / Batch COA (chemical purity and interstitial O, N, C, H ppm analysis) plus dimensional inspection report.

### Technical Overview
Consolidated by powder metallurgy, vacuum arc remelting (VAR), or electron-beam melting and stress-relieved for high-temperature dimensional stability, our High-Purity molybdenum (mo) foil, sheet, plate & discs (Mo, CAS 7439-98-7) products deliver reliable performance in vacuum, inert-gas, and reducing furnace atmospheres.

Bright cold-rolled molybdenum foil and alkaline-cleaned sheet exhibit low thermal emissivity and low CTE (4.8 × 10⁻⁶ /K, closely matching silicon and SiC), making them standard for vacuum heat shields and power-semiconductor baseplates. Every shipment includes the producing mill's chemical purity Certificate of Analysis (reporting metallic and interstitial O, N, C, H trace levels in ppm) and pre-shipment dimensional verification.

### Nominal Properties
- **Composition & CAS #:** Mo (CAS 7439-98-7)
- **Purity / Alloy Grade:** 3N5 (99.95%) / 4N (99.99%) Cross-Rolled & Annealed
- **Density:** 10.22 g/cm³
- **Melting Point:** 2,623 °C
- **Available Mill & Machined Forms:** Foil 0.025–0.5 mm; Sheet 0.5–3.0 mm; Plate 3.0–40 mm; Stamped/Laser-Cut Discs

### Applications
- Multi-layer reflective radiation heat-shield packs for vacuum furnaces up to 1,800 °C
- CTE-matched molybdenum contact discs and heat spreaders for Si/SiC power thyristors and diodes
- Sputtering target non-magnetic backing plates and furnace hearth liners
- Etched ion-source grids, masks, and X-ray mammography anodes

### Buyer Specification Guide
Specify Mo purity or alloy grade (3N5 (99.95%) / 4N (99.99%) Cross-Rolled & Annealed), form and dimensions (Foil 0.025–0.5 mm; Sheet 0.5–3.0 mm; Plate 3.0–40 mm; Stamped/Laser-Cut Discs), surface finish (rolled, ground, electropolished, or chemically cleaned), and quantity.

### Technical FAQs
- **Q: What atmosphere is required when operating High-Purity molybdenum (mo) foil, sheet, plate & discs (Mo) at high temperature?**
  A: Refractory metals oxidize in air above 400–500 °C; operate in high vacuum (≤10⁻⁴ Torr), high-purity argon/helium, or reducing hydrogen/forming-gas atmospheres.
- **Q: Can TB-MO-SH be custom machined to our engineering print?**
  A: Yes. Attach a STEP/DXF/PDF drawing on the RFQ page for precision CNC turning, milling, wire-EDM, laser cutting, or forming with small-batch R&D minimums.
- **Q: What certification ships with High-Purity molybdenum (mo) foil, sheet, plate & discs?**
  A: All shipments include the producing mill's batch chemical Certificate of Analysis (ICP/GDMS trace impurities and interstitial gas content) and dimensional verification.

---
## Molybdenum (Mo) Rods, Bars, Threaded Studs, Nuts & Washers (`TB-MO-ROD`)
- **URL:** https://tensilebase.com/products/molybdenum-rods-threaded-furnace-hardware/
- **Quote URL:** https://tensilebase.com/quote.html?product=molybdenum-rods-threaded-furnace-hardware
- **Category:** Refractory Metals
- **Chemical Formula:** Mo (Elements: Mo)
- **CAS Registry Number:** 7439-98-7
- **Synonyms:** High-purity Mo refractory metal, vacuum furnace molybdenum (mo) rods, bars, threaded studs, nuts & washers, 99.95% Pure Molybdenum (ASTM B387 Type 361) Mo
- **Purity / Grades:** 99.95% Pure Molybdenum (ASTM B387 Type 361)
- **Typical Dimensions:** Rods Ø 1.0–100 mm; Metric M3–M20 & Imperial Threaded Rods, Hex Nuts, & Screws
- **Configurations:** Standard mill stock & precision CNC / wire-EDM custom machining to drawing
- **Typical Lead Time:** 7–15 business days
- **Documentation Included:** Manufacturer Mill Test Certificate / Batch COA (chemical purity and interstitial O, N, C, H ppm analysis) plus dimensional inspection report.

### Technical Overview
Consolidated by powder metallurgy, vacuum arc remelting (VAR), or electron-beam melting and stress-relieved for high-temperature dimensional stability, our molybdenum (mo) rods, bars, threaded studs, nuts & washers (Mo, CAS 7439-98-7) products deliver reliable performance in vacuum, inert-gas, and reducing furnace atmospheres.

Steel and nickel fasteners melt or weld shut inside high-temperature vacuum furnaces; precision-machined molybdenum threaded studs, hex bolts, nuts, and spacer tubes secure hot-zone shields and elements reliably up to 1,800 °C. Every shipment includes the producing mill's chemical purity Certificate of Analysis (reporting metallic and interstitial O, N, C, H trace levels in ppm) and pre-shipment dimensional verification.

### Nominal Properties
- **Composition & CAS #:** Mo (CAS 7439-98-7)
- **Purity / Alloy Grade:** 99.95% Pure Molybdenum (ASTM B387 Type 361)
- **Density:** 10.22 g/cm³
- **Melting Point:** 2,623 °C
- **Available Mill & Machined Forms:** Rods Ø 1.0–100 mm; Metric M3–M20 & Imperial Threaded Rods, Hex Nuts, & Screws

### Applications
- Vacuum furnace hot-zone fastener assemblies (M3–M16 bolts, hex nuts, washers, and standoffs)
- Glass-melting furnace booster electrodes and stirrers
- High-temperature tensile testing grips and extensometer pull rods
- Support hearth rails and molybdenum heating element power feedthroughs

### Buyer Specification Guide
Specify Mo purity or alloy grade (99.95% Pure Molybdenum (ASTM B387 Type 361)), form and dimensions (Rods Ø 1.0–100 mm; Metric M3–M20 & Imperial Threaded Rods, Hex Nuts, & Screws), surface finish (rolled, ground, electropolished, or chemically cleaned), and quantity.

### Technical FAQs
- **Q: What atmosphere is required when operating molybdenum (mo) rods, bars, threaded studs, nuts & washers (Mo) at high temperature?**
  A: Refractory metals oxidize in air above 400–500 °C; operate in high vacuum (≤10⁻⁴ Torr), high-purity argon/helium, or reducing hydrogen/forming-gas atmospheres.
- **Q: Can TB-MO-ROD be custom machined to our engineering print?**
  A: Yes. Attach a STEP/DXF/PDF drawing on the RFQ page for precision CNC turning, milling, wire-EDM, laser cutting, or forming with small-batch R&D minimums.
- **Q: What certification ships with molybdenum (mo) rods, bars, threaded studs, nuts & washers?**
  A: All shipments include the producing mill's batch chemical Certificate of Analysis (ICP/GDMS trace impurities and interstitial gas content) and dimensional verification.

---
## TZM Molybdenum Alloy (Mo-0.5Ti-0.08Zr) Plate, Rod & Hot-Zone Tooling (`TB-MO-TZM`)
- **URL:** https://tensilebase.com/products/tzm-molybdenum-alloy-hot-zone-components/
- **Quote URL:** https://tensilebase.com/quote.html?product=tzm-molybdenum-alloy-hot-zone-components
- **Category:** Refractory Metals
- **Chemical Formula:** Mo-0.5Ti-0.08Zr-0.02C (Elements: Mo, Ti, Zr)
- **CAS Registry Number:** 7439-98-7
- **Synonyms:** High-purity Mo-0.5Ti-0.08Zr-0.02C refractory metal, vacuum furnace TZM molybdenum alloy (Mo-0.5Ti-0.08Zr) plate, rod & Hot-Zone tooling, ASTM B387 Type 364 (TZM Precipitation-Hardened Alloy) Mo-0.5Ti-0.08Zr-0.02C
- **Purity / Grades:** ASTM B387 Type 364 (TZM Precipitation-Hardened Alloy)
- **Typical Dimensions:** Rods Ø 3–120 mm; Plate 1–50 mm; Machined Hot-Press Dies, Hearths & Piercing Plugs
- **Configurations:** Standard mill stock & precision CNC / wire-EDM custom machining to drawing
- **Typical Lead Time:** 7–15 business days
- **Documentation Included:** Manufacturer Mill Test Certificate / Batch COA (chemical purity and interstitial O, N, C, H ppm analysis) plus dimensional inspection report.

### Technical Overview
Consolidated by powder metallurgy, vacuum arc remelting (VAR), or electron-beam melting and stress-relieved for high-temperature dimensional stability, our TZM molybdenum alloy (Mo-0.5Ti-0.08Zr) plate, rod & Hot-Zone tooling (Mo-0.5Ti-0.08Zr-0.02C, CAS 7439-98-7) products deliver reliable performance in vacuum, inert-gas, and reducing furnace atmospheres.

Fine TiC and ZrC carbide dispersion raises TZM's recrystallization temperature by ~250–300 °C over pure molybdenum and doubles its creep strength above 1,100 °C. Every shipment includes the producing mill's chemical purity Certificate of Analysis (reporting metallic and interstitial O, N, C, H trace levels in ppm) and pre-shipment dimensional verification.

### Nominal Properties
- **Composition & CAS #:** Mo-0.5Ti-0.08Zr-0.02C (CAS 7439-98-7)
- **Purity / Alloy Grade:** ASTM B387 Type 364 (TZM Precipitation-Hardened Alloy)
- **Density:** 10.16 g/cm³
- **Melting Point:** 2,620 °C
- **Available Mill & Machined Forms:** Rods Ø 3–120 mm; Plate 1–50 mm; Machined Hot-Press Dies, Hearths & Piercing Plugs

### Applications
- Heavy-load vacuum furnace hearth rails, charge grids, and hot-isostatic-press (HIP) tooling
- Isothermal forging dies and high-temperature hot-pressing molds
- Rotating X-ray anode substrates and rocket nozzle/valve components
- Seamless stainless-steel tube piercing plugs and die-casting cores

### Buyer Specification Guide
Specify Mo-0.5Ti-0.08Zr-0.02C purity or alloy grade (ASTM B387 Type 364 (TZM Precipitation-Hardened Alloy)), form and dimensions (Rods Ø 3–120 mm; Plate 1–50 mm; Machined Hot-Press Dies, Hearths & Piercing Plugs), surface finish (rolled, ground, electropolished, or chemically cleaned), and quantity.

### Technical FAQs
- **Q: What atmosphere is required when operating TZM molybdenum alloy (Mo-0.5Ti-0.08Zr) plate, rod & Hot-Zone tooling (Mo-0.5Ti-0.08Zr-0.02C) at high temperature?**
  A: Refractory metals oxidize in air above 400–500 °C; operate in high vacuum (≤10⁻⁴ Torr), high-purity argon/helium, or reducing hydrogen/forming-gas atmospheres.
- **Q: Can TB-MO-TZM be custom machined to our engineering print?**
  A: Yes. Attach a STEP/DXF/PDF drawing on the RFQ page for precision CNC turning, milling, wire-EDM, laser cutting, or forming with small-batch R&D minimums.
- **Q: What certification ships with TZM molybdenum alloy (Mo-0.5Ti-0.08Zr) plate, rod & Hot-Zone tooling?**
  A: All shipments include the producing mill's batch chemical Certificate of Analysis (ICP/GDMS trace impurities and interstitial gas content) and dimensional verification.

---
## High-Purity Tantalum (Ta) Crucibles, Boats & Chemical Liners (`TB-TA-CRU`)
- **URL:** https://tensilebase.com/products/tantalum-crucibles-diffusion-liners/
- **Quote URL:** https://tensilebase.com/quote.html?product=tantalum-crucibles-diffusion-liners
- **Category:** Refractory Metals
- **Chemical Formula:** Ta (Elements: Ta)
- **CAS Registry Number:** 7440-25-7
- **Synonyms:** High-purity Ta refractory metal, vacuum furnace High-Purity tantalum (ta) crucibles, boats & chemical liners, 3N5 (99.95%) / 4N (99.99%) Electron-Beam Melted (RO5200 / RO5400) Ta
- **Purity / Grades:** 3N5 (99.95%) / 4N (99.99%) Electron-Beam Melted (RO5200 / RO5400)
- **Typical Dimensions:** Seamless Deep-Drawn & Welded Crucibles OD 10–150 mm × Wall 0.5–5.0 mm
- **Configurations:** Standard mill stock & precision CNC / wire-EDM custom machining to drawing
- **Typical Lead Time:** 7–15 business days
- **Documentation Included:** Manufacturer Mill Test Certificate / Batch COA (chemical purity and interstitial O, N, C, H ppm analysis) plus dimensional inspection report.

### Technical Overview
Consolidated by powder metallurgy, vacuum arc remelting (VAR), or electron-beam melting and stress-relieved for high-temperature dimensional stability, our High-Purity tantalum (ta) crucibles, boats & chemical liners (Ta, CAS 7440-25-7) products deliver reliable performance in vacuum, inert-gas, and reducing furnace atmospheres.

Combining a 3,017 °C melting point with glass-like immunity to boiling HCl, HNO3, H2SO4, and liquid lanthanide metals, tantalum crucibles excel in rare-earth metallurgy, SiC crystal growth, and corrosive chemical processing. Every shipment includes the producing mill's chemical purity Certificate of Analysis (reporting metallic and interstitial O, N, C, H trace levels in ppm) and pre-shipment dimensional verification.

### Nominal Properties
- **Composition & CAS #:** Ta (CAS 7440-25-7)
- **Purity / Alloy Grade:** 3N5 (99.95%) / 4N (99.99%) Electron-Beam Melted (RO5200 / RO5400)
- **Density:** 16.65 g/cm³
- **Melting Point:** 3,017 °C
- **Available Mill & Machined Forms:** Seamless Deep-Drawn & Welded Crucibles OD 10–150 mm × Wall 0.5–5.0 mm

### Applications
- Melting and vacuum distillation of rare-earth metals (Sc, Y, La, Nd, Gd, Dy, Lu)
- Sublimation physical vapor transport (PVT) growth of SiC and AlN crystals (TaC-converted liners)
- Ultra-pure acid digestion vessels, thermowells, and autoclave liners
- High-temperature effusion cells and e-beam crucible inserts

### Buyer Specification Guide
Specify Ta purity or alloy grade (3N5 (99.95%) / 4N (99.99%) Electron-Beam Melted (RO5200 / RO5400)), form and dimensions (Seamless Deep-Drawn & Welded Crucibles OD 10–150 mm × Wall 0.5–5.0 mm), surface finish (rolled, ground, electropolished, or chemically cleaned), and quantity.

### Technical FAQs
- **Q: What atmosphere is required when operating High-Purity tantalum (ta) crucibles, boats & chemical liners (Ta) at high temperature?**
  A: Refractory metals oxidize in air above 400–500 °C; operate in high vacuum (≤10⁻⁴ Torr), high-purity argon/helium, or reducing hydrogen/forming-gas atmospheres.
- **Q: Can TB-TA-CRU be custom machined to our engineering print?**
  A: Yes. Attach a STEP/DXF/PDF drawing on the RFQ page for precision CNC turning, milling, wire-EDM, laser cutting, or forming with small-batch R&D minimums.
- **Q: What certification ships with High-Purity tantalum (ta) crucibles, boats & chemical liners?**
  A: All shipments include the producing mill's batch chemical Certificate of Analysis (ICP/GDMS trace impurities and interstitial gas content) and dimensional verification.

---
## High-Purity Tantalum (Ta) Foil, Sheet, Rod, Wire & Capillary Tubing (`TB-TA-SH`)
- **URL:** https://tensilebase.com/products/tantalum-foil-sheet-wire-rods/
- **Quote URL:** https://tensilebase.com/quote.html?product=tantalum-foil-sheet-wire-rods
- **Category:** Refractory Metals
- **Chemical Formula:** Ta (Elements: Ta)
- **CAS Registry Number:** 7440-25-7
- **Synonyms:** High-purity Ta refractory metal, vacuum furnace High-Purity tantalum (ta) foil, sheet, rod, wire & capillary tubing, 3N5 (99.95%) / 4N (99.99%) Annealed Ductile Grade Ta
- **Purity / Grades:** 3N5 (99.95%) / 4N (99.99%) Annealed Ductile Grade
- **Typical Dimensions:** Foil 0.01–0.5 mm; Sheet 0.5–6.0 mm; Wire Ø 0.05–3.0 mm; Rods Ø 2–50 mm; Seamless Tube
- **Configurations:** Standard mill stock & precision CNC / wire-EDM custom machining to drawing
- **Typical Lead Time:** 7–15 business days
- **Documentation Included:** Manufacturer Mill Test Certificate / Batch COA (chemical purity and interstitial O, N, C, H ppm analysis) plus dimensional inspection report.

### Technical Overview
Consolidated by powder metallurgy, vacuum arc remelting (VAR), or electron-beam melting and stress-relieved for high-temperature dimensional stability, our High-Purity tantalum (ta) foil, sheet, rod, wire & capillary tubing (Ta, CAS 7440-25-7) products deliver reliable performance in vacuum, inert-gas, and reducing furnace atmospheres.

Unlike tungsten and molybdenum, pure tantalum remains exceptionally ductile even after high-temperature vacuum cycling, making it the preferred material for complex formed heater elements, oxygen-getter shields, and medical/chemical hardware. Every shipment includes the producing mill's chemical purity Certificate of Analysis (reporting metallic and interstitial O, N, C, H trace levels in ppm) and pre-shipment dimensional verification.

### Nominal Properties
- **Composition & CAS #:** Ta (CAS 7440-25-7)
- **Purity / Alloy Grade:** 3N5 (99.95%) / 4N (99.99%) Annealed Ductile Grade
- **Density:** 16.65 g/cm³
- **Melting Point:** 3,017 °C
- **Available Mill & Machined Forms:** Foil 0.01–0.5 mm; Sheet 0.5–6.0 mm; Wire Ø 0.05–3.0 mm; Rods Ø 2–50 mm; Seamless Tube

### Applications
- Ductile vacuum furnace heating elements, radiation shields, and getter foils
- Diffusion barriers between graphite susceptors and oxide/nitride samples
- Capacitor anode wires, bone-implant markers, and radiographic clips
- Corrosion-proof heat-exchanger tubes and patch repair discs for glass-lined reactors

### Buyer Specification Guide
Specify Ta purity or alloy grade (3N5 (99.95%) / 4N (99.99%) Annealed Ductile Grade), form and dimensions (Foil 0.01–0.5 mm; Sheet 0.5–6.0 mm; Wire Ø 0.05–3.0 mm; Rods Ø 2–50 mm; Seamless Tube), surface finish (rolled, ground, electropolished, or chemically cleaned), and quantity.

### Technical FAQs
- **Q: What atmosphere is required when operating High-Purity tantalum (ta) foil, sheet, rod, wire & capillary tubing (Ta) at high temperature?**
  A: Refractory metals oxidize in air above 400–500 °C; operate in high vacuum (≤10⁻⁴ Torr), high-purity argon/helium, or reducing hydrogen/forming-gas atmospheres.
- **Q: Can TB-TA-SH be custom machined to our engineering print?**
  A: Yes. Attach a STEP/DXF/PDF drawing on the RFQ page for precision CNC turning, milling, wire-EDM, laser cutting, or forming with small-batch R&D minimums.
- **Q: What certification ships with High-Purity tantalum (ta) foil, sheet, rod, wire & capillary tubing?**
  A: All shipments include the producing mill's batch chemical Certificate of Analysis (ICP/GDMS trace impurities and interstitial gas content) and dimensional verification.

---
## High-Purity & Superconducting RRR Niobium (Nb) Foil, Sheet, Rod & Tube (`TB-NB-SH`)
- **URL:** https://tensilebase.com/products/niobium-foil-sheet-rods-superconducting-grade/
- **Quote URL:** https://tensilebase.com/quote.html?product=niobium-foil-sheet-rods-superconducting-grade
- **Category:** Refractory Metals
- **Chemical Formula:** Nb (Elements: Nb)
- **CAS Registry Number:** 7440-03-1
- **Synonyms:** High-purity Nb refractory metal, vacuum furnace High-Purity & superconducting RRR niobium (nb) foil, sheet, rod & tube, 3N5 (99.95% Type 1/2) & High-RRR 30–300 Superconducting Electron-Beam Grade Nb
- **Purity / Grades:** 3N5 (99.95% Type 1/2) & High-RRR 30–300 Superconducting Electron-Beam Grade
- **Typical Dimensions:** Foil 0.025–0.5 mm; Sheet 0.5–10 mm; Rod Ø 1–60 mm; Wire Ø 0.1–2.0 mm; Seamless Tube
- **Configurations:** Standard mill stock & precision CNC / wire-EDM custom machining to drawing
- **Typical Lead Time:** 7–15 business days
- **Documentation Included:** Manufacturer Mill Test Certificate / Batch COA (chemical purity and interstitial O, N, C, H ppm analysis) plus dimensional inspection report.

### Technical Overview
Consolidated by powder metallurgy, vacuum arc remelting (VAR), or electron-beam melting and stress-relieved for high-temperature dimensional stability, our High-Purity & superconducting RRR niobium (nb) foil, sheet, rod & tube (Nb, CAS 7440-03-1) products deliver reliable performance in vacuum, inert-gas, and reducing furnace atmospheres.

With the highest critical temperature (Tc = 9.25 K) and lower critical field of any pure elemental superconductor, electron-beam refined niobium is central to SRF accelerator cavities, quantum circuits, and high-temperature corrosion barriers. Every shipment includes the producing mill's chemical purity Certificate of Analysis (reporting metallic and interstitial O, N, C, H trace levels in ppm) and pre-shipment dimensional verification.

### Nominal Properties
- **Composition & CAS #:** Nb (CAS 7440-03-1)
- **Purity / Alloy Grade:** 3N5 (99.95% Type 1/2) & High-RRR 30–300 Superconducting Electron-Beam Grade
- **Density:** 8.57 g/cm³
- **Melting Point:** 2,477 °C
- **Available Mill & Machined Forms:** Foil 0.025–0.5 mm; Sheet 0.5–10 mm; Rod Ø 1–60 mm; Wire Ø 0.1–2.0 mm; Seamless Tube

### Applications
- Superconducting radio-frequency (SRF) particle accelerator cavities and cryogenic shields (RRR ≥ 250–300)
- Superconducting quantum interference devices (SQUID), Josephson junctions, and coaxial wiring
- High-pressure sodium lamp arc-tube end caps and chemical processing liners
- Biocompatible non-magnetic surgical implants and optical-anodized components

### Buyer Specification Guide
Specify Nb purity or alloy grade (3N5 (99.95% Type 1/2) & High-RRR 30–300 Superconducting Electron-Beam Grade), form and dimensions (Foil 0.025–0.5 mm; Sheet 0.5–10 mm; Rod Ø 1–60 mm; Wire Ø 0.1–2.0 mm; Seamless Tube), surface finish (rolled, ground, electropolished, or chemically cleaned), and quantity.

### Technical FAQs
- **Q: What atmosphere is required when operating High-Purity & superconducting RRR niobium (nb) foil, sheet, rod & tube (Nb) at high temperature?**
  A: Refractory metals oxidize in air above 400–500 °C; operate in high vacuum (≤10⁻⁴ Torr), high-purity argon/helium, or reducing hydrogen/forming-gas atmospheres.
- **Q: Can TB-NB-SH be custom machined to our engineering print?**
  A: Yes. Attach a STEP/DXF/PDF drawing on the RFQ page for precision CNC turning, milling, wire-EDM, laser cutting, or forming with small-batch R&D minimums.
- **Q: What certification ships with High-Purity & superconducting RRR niobium (nb) foil, sheet, rod & tube?**
  A: All shipments include the producing mill's batch chemical Certificate of Analysis (ICP/GDMS trace impurities and interstitial gas content) and dimensional verification.

---
## High-Purity Titanium (4N) & Grade 1 / 2 / 5 (Ti-6Al-4V) Foil, Sheet, Rod & Mesh (`TB-TI-ML`)
- **URL:** https://tensilebase.com/products/titanium-foil-sheet-rods-grade-1-2-5/
- **Quote URL:** https://tensilebase.com/quote.html?product=titanium-foil-sheet-rods-grade-1-2-5
- **Category:** Refractory Metals
- **Chemical Formula:** Ti / Ti-6Al-4V (Elements: Ti, Al, V)
- **CAS Registry Number:** 7440-32-6
- **Synonyms:** High-purity Ti / Ti-6Al-4V refractory metal, vacuum furnace High-Purity titanium (4N) & grade 1 / 2 / 5 (Ti-6Al-4V) foil, sheet, rod & mesh, 4N (99.99%) Research Grade, CP Grade 1/2 (ASTM B265/B348), & Grade 5 (Ti-6Al-4V) Ti / Ti-6Al-4V
- **Purity / Grades:** 4N (99.99%) Research Grade, CP Grade 1/2 (ASTM B265/B348), & Grade 5 (Ti-6Al-4V)
- **Typical Dimensions:** Foil 0.01–0.5 mm; Sheet 0.5–20 mm; Rod Ø 1–100 mm; Wire Ø 0.1–3 mm; Woven/Expanded Mesh
- **Configurations:** Standard mill stock & precision CNC / wire-EDM custom machining to drawing
- **Typical Lead Time:** 7–15 business days
- **Documentation Included:** Manufacturer Mill Test Certificate / Batch COA (chemical purity and interstitial O, N, C, H ppm analysis) plus dimensional inspection report.

### Technical Overview
Consolidated by powder metallurgy, vacuum arc remelting (VAR), or electron-beam melting and stress-relieved for high-temperature dimensional stability, our High-Purity titanium (4N) & grade 1 / 2 / 5 (Ti-6Al-4V) foil, sheet, rod & mesh (Ti / Ti-6Al-4V, CAS 7440-32-6) products deliver reliable performance in vacuum, inert-gas, and reducing furnace atmospheres.

Combining high specific strength, non-magnetic behavior, biocompatibility, and titanium-sublimation getter reactivity, our titanium mill forms span 4N research foils to CP Grade 1/2 and Ti-6Al-4V structural stock. Every shipment includes the producing mill's chemical purity Certificate of Analysis (reporting metallic and interstitial O, N, C, H trace levels in ppm) and pre-shipment dimensional verification.

### Nominal Properties
- **Composition & CAS #:** Ti / Ti-6Al-4V (CAS 7440-32-6)
- **Purity / Alloy Grade:** 4N (99.99%) Research Grade, CP Grade 1/2 (ASTM B265/B348), & Grade 5 (Ti-6Al-4V)
- **Density:** 4.51 g/cm³
- **Melting Point:** 1,668 °C
- **Available Mill & Machined Forms:** Foil 0.01–0.5 mm; Sheet 0.5–20 mm; Rod Ø 1–100 mm; Wire Ø 0.1–3 mm; Woven/Expanded Mesh

### Applications
- Electrochemical anodes, PEM electrolyzer bipolar plates, and woven Ti current-collector mesh
- Ultra-high-vacuum (UHV) titanium sublimation pump (TSP) filaments and getter shields
- Biocompatible bone-fixation prototypes, microfluidic manifolds, and acoustic horns (Ti-6Al-4V)
- X-ray/electron transmission windows (0.01–0.05 mm pure Ti foil) and anodizing racks

### Buyer Specification Guide
Specify Ti / Ti-6Al-4V purity or alloy grade (4N (99.99%) Research Grade, CP Grade 1/2 (ASTM B265/B348), & Grade 5 (Ti-6Al-4V)), form and dimensions (Foil 0.01–0.5 mm; Sheet 0.5–20 mm; Rod Ø 1–100 mm; Wire Ø 0.1–3 mm; Woven/Expanded Mesh), surface finish (rolled, ground, electropolished, or chemically cleaned), and quantity.

### Technical FAQs
- **Q: What atmosphere is required when operating High-Purity titanium (4N) & grade 1 / 2 / 5 (Ti-6Al-4V) foil, sheet, rod & mesh (Ti / Ti-6Al-4V) at high temperature?**
  A: Refractory metals oxidize in air above 400–500 °C; operate in high vacuum (≤10⁻⁴ Torr), high-purity argon/helium, or reducing hydrogen/forming-gas atmospheres.
- **Q: Can TB-TI-ML be custom machined to our engineering print?**
  A: Yes. Attach a STEP/DXF/PDF drawing on the RFQ page for precision CNC turning, milling, wire-EDM, laser cutting, or forming with small-batch R&D minimums.
- **Q: What certification ships with High-Purity titanium (4N) & grade 1 / 2 / 5 (Ti-6Al-4V) foil, sheet, rod & mesh?**
  A: All shipments include the producing mill's batch chemical Certificate of Analysis (ICP/GDMS trace impurities and interstitial gas content) and dimensional verification.

---
## Zirconium (Zr 702 & Low-Hf 3N5) Crucibles, Foil, Sheet, Rod & Wire (`TB-ZR-ML`)
- **URL:** https://tensilebase.com/products/zirconium-702-crucibles-foil-rods/
- **Quote URL:** https://tensilebase.com/quote.html?product=zirconium-702-crucibles-foil-rods
- **Category:** Refractory Metals
- **Chemical Formula:** Zr (Elements: Zr)
- **CAS Registry Number:** 7440-67-7
- **Synonyms:** High-purity Zr refractory metal, vacuum furnace zirconium (zr 702 & Low-Hf 3N5) crucibles, foil, sheet, rod & wire, ASTM B551 Zr 702 (99.2% Zr+Hf) & Low-Hafnium 3N5 (<100 ppm Hf) Research Grade Zr
- **Purity / Grades:** ASTM B551 Zr 702 (99.2% Zr+Hf) & Low-Hafnium 3N5 (<100 ppm Hf) Research Grade
- **Typical Dimensions:** Fusion Crucibles (15–250 mL); Foil 0.025–0.5 mm; Sheet 0.5–10 mm; Rod Ø 2–50 mm
- **Configurations:** Standard mill stock & precision CNC / wire-EDM custom machining to drawing
- **Typical Lead Time:** 7–15 business days
- **Documentation Included:** Manufacturer Mill Test Certificate / Batch COA (chemical purity and interstitial O, N, C, H ppm analysis) plus dimensional inspection report.

### Technical Overview
Consolidated by powder metallurgy, vacuum arc remelting (VAR), or electron-beam melting and stress-relieved for high-temperature dimensional stability, our zirconium (zr 702 & Low-Hf 3N5) crucibles, foil, sheet, rod & wire (Zr, CAS 7440-67-7) products deliver reliable performance in vacuum, inert-gas, and reducing furnace atmospheres.

Zirconium laboratory crucibles withstand molten sodium peroxide (Na2O2) and sodium carbonate fusions that rapidly destroy platinum and porcelain labware, while low-Hf zirconium foil serves nuclear, X-ray filter, and getter research. Every shipment includes the producing mill's chemical purity Certificate of Analysis (reporting metallic and interstitial O, N, C, H trace levels in ppm) and pre-shipment dimensional verification.

### Nominal Properties
- **Composition & CAS #:** Zr (CAS 7440-67-7)
- **Purity / Alloy Grade:** ASTM B551 Zr 702 (99.2% Zr+Hf) & Low-Hafnium 3N5 (<100 ppm Hf) Research Grade
- **Density:** 6.52 g/cm³
- **Melting Point:** 1,855 °C
- **Available Mill & Machined Forms:** Fusion Crucibles (15–250 mL); Foil 0.025–0.5 mm; Sheet 0.5–10 mm; Rod Ø 2–50 mm

### Applications
- Sodium peroxide (Na2O2) and alkali-carbonate analytical fusion crucibles (50–100+ fusions per crucible)
- X-ray K-edge filtration foils (17.998 keV K-edge) and neutron/corrosion research coupons
- Hot-gas chemical getters for O2, N2, and H2O purification
- Acetic, hydrochloric, and nitric acid chemical reactor hardware

### Buyer Specification Guide
Specify Zr purity or alloy grade (ASTM B551 Zr 702 (99.2% Zr+Hf) & Low-Hafnium 3N5 (<100 ppm Hf) Research Grade), form and dimensions (Fusion Crucibles (15–250 mL); Foil 0.025–0.5 mm; Sheet 0.5–10 mm; Rod Ø 2–50 mm), surface finish (rolled, ground, electropolished, or chemically cleaned), and quantity.

### Technical FAQs
- **Q: What atmosphere is required when operating zirconium (zr 702 & Low-Hf 3N5) crucibles, foil, sheet, rod & wire (Zr) at high temperature?**
  A: Refractory metals oxidize in air above 400–500 °C; operate in high vacuum (≤10⁻⁴ Torr), high-purity argon/helium, or reducing hydrogen/forming-gas atmospheres.
- **Q: Can TB-ZR-ML be custom machined to our engineering print?**
  A: Yes. Attach a STEP/DXF/PDF drawing on the RFQ page for precision CNC turning, milling, wire-EDM, laser cutting, or forming with small-batch R&D minimums.
- **Q: What certification ships with zirconium (zr 702 & Low-Hf 3N5) crucibles, foil, sheet, rod & wire?**
  A: All shipments include the producing mill's batch chemical Certificate of Analysis (ICP/GDMS trace impurities and interstitial gas content) and dimensional verification.

---
## High-Purity Nickel (3N–5N & Ni 200/201) Crucibles, Foil, Sheet, Wire & Mesh (`TB-NI-ML`)
- **URL:** https://tensilebase.com/products/high-purity-nickel-200-201-crucibles-foil-wire/
- **Quote URL:** https://tensilebase.com/quote.html?product=high-purity-nickel-200-201-crucibles-foil-wire
- **Category:** Refractory Metals
- **Chemical Formula:** Ni (Elements: Ni)
- **CAS Registry Number:** 7440-02-0
- **Synonyms:** High-purity Ni refractory metal, vacuum furnace High-Purity nickel (3N–5N & ni 200/201) crucibles, foil, sheet, wire & mesh, 4N (99.99%) / 5N Research Grade & Low-Carbon Nickel 201 (UNS N02201) Ni
- **Purity / Grades:** 4N (99.99%) / 5N Research Grade & Low-Carbon Nickel 201 (UNS N02201)
- **Typical Dimensions:** Alkali-Fusion Crucibles (20–250 mL); Foil 0.01–0.5 mm; Wire Ø 0.05–3 mm; Woven Mesh
- **Configurations:** Standard mill stock & precision CNC / wire-EDM custom machining to drawing
- **Typical Lead Time:** 7–15 business days
- **Documentation Included:** Manufacturer Mill Test Certificate / Batch COA (chemical purity and interstitial O, N, C, H ppm analysis) plus dimensional inspection report.

### Technical Overview
Consolidated by powder metallurgy, vacuum arc remelting (VAR), or electron-beam melting and stress-relieved for high-temperature dimensional stability, our High-Purity nickel (3N–5N & ni 200/201) crucibles, foil, sheet, wire & mesh (Ni, CAS 7440-02-0) products deliver reliable performance in vacuum, inert-gas, and reducing furnace atmospheres.

Low-carbon Nickel 201 resists caustic alkali fusions (NaOH, KOH) and fluorine/fluoride salt environments up to 600 °C without intergranular graphite embrittlement, while 4N5–5N Ni foil supports CVD graphene growth and battery tabs. Every shipment includes the producing mill's chemical purity Certificate of Analysis (reporting metallic and interstitial O, N, C, H trace levels in ppm) and pre-shipment dimensional verification.

### Nominal Properties
- **Composition & CAS #:** Ni (CAS 7440-02-0)
- **Purity / Alloy Grade:** 4N (99.99%) / 5N Research Grade & Low-Carbon Nickel 201 (UNS N02201)
- **Density:** 8.90 g/cm³
- **Melting Point:** 1,455 °C
- **Available Mill & Machined Forms:** Alkali-Fusion Crucibles (20–250 mL); Foil 0.01–0.5 mm; Wire Ø 0.05–3 mm; Woven Mesh

### Applications
- NaOH and KOH analytical fusion crucibles with lids for mineral and slag digestion
- Catalytic polycrystalline and <111>-textured Ni foils for multilayer graphene and h-BN CVD
- Lithium-ion / alkaline battery current-collector tabs, spot-welding strips, and woven Ni mesh
- Molten fluoride salt (FLiNaK) and chlor-alkali corrosion test electrodes

### Buyer Specification Guide
Specify Ni purity or alloy grade (4N (99.99%) / 5N Research Grade & Low-Carbon Nickel 201 (UNS N02201)), form and dimensions (Alkali-Fusion Crucibles (20–250 mL); Foil 0.01–0.5 mm; Wire Ø 0.05–3 mm; Woven Mesh), surface finish (rolled, ground, electropolished, or chemically cleaned), and quantity.

### Technical FAQs
- **Q: What atmosphere is required when operating High-Purity nickel (3N–5N & ni 200/201) crucibles, foil, sheet, wire & mesh (Ni) at high temperature?**
  A: Refractory metals oxidize in air above 400–500 °C; operate in high vacuum (≤10⁻⁴ Torr), high-purity argon/helium, or reducing hydrogen/forming-gas atmospheres.
- **Q: Can TB-NI-ML be custom machined to our engineering print?**
  A: Yes. Attach a STEP/DXF/PDF drawing on the RFQ page for precision CNC turning, milling, wire-EDM, laser cutting, or forming with small-batch R&D minimums.
- **Q: What certification ships with High-Purity nickel (3N–5N & ni 200/201) crucibles, foil, sheet, wire & mesh?**
  A: All shipments include the producing mill's batch chemical Certificate of Analysis (ICP/GDMS trace impurities and interstitial gas content) and dimensional verification.

---
## Tungsten-Rhenium Thermocouple Wire (Type C, Type D & Type G) & Probes (`TB-WRE-TC`)
- **URL:** https://tensilebase.com/products/tungsten-rhenium-thermocouple-wire-c-d-g/
- **Quote URL:** https://tensilebase.com/quote.html?product=tungsten-rhenium-thermocouple-wire-c-d-g
- **Category:** Refractory Metals
- **Chemical Formula:** W5Re / W26Re & W3Re / W25Re (Elements: W, Re)
- **CAS Registry Number:** 7440-15-5
- **Synonyms:** High-purity W5Re / W26Re & W3Re / W25Re refractory metal, vacuum furnace Tungsten-Rhenium thermocouple wire (type c, type d & type g) & probes, Matched EMF Calibration Grade (ASTM E988 / IEC 60584 Type C & Type D) W5Re / W26Re & W3Re / W25Re
- **Purity / Grades:** Matched EMF Calibration Grade (ASTM E988 / IEC 60584 Type C & Type D)
- **Typical Dimensions:** Matched Bare Wire Pairs Ø 0.127 mm (0.005"), 0.25 mm (0.010"), 0.38 mm, 0.50 mm + Al2O3/HfO2/BN Insulators
- **Configurations:** Standard mill stock & precision CNC / wire-EDM custom machining to drawing
- **Typical Lead Time:** 7–15 business days
- **Documentation Included:** Manufacturer Mill Test Certificate / Batch COA (chemical purity and interstitial O, N, C, H ppm analysis) plus dimensional inspection report.

### Technical Overview
Consolidated by powder metallurgy, vacuum arc remelting (VAR), or electron-beam melting and stress-relieved for high-temperature dimensional stability, our Tungsten-Rhenium thermocouple wire (type c, type d & type g) & probes (W5Re / W26Re & W3Re / W25Re, CAS 7440-15-5) products deliver reliable performance in vacuum, inert-gas, and reducing furnace atmospheres.

Above 1,700 °C where Platinum-Rhodium (Type B/R/S) thermocouples soften or melt, matched Tungsten-Rhenium Type C (W5%Re vs. W26%Re) and Type D (W3%Re vs. W25%Re) wires measure vacuum and inert-gas furnace temperatures continuously up to 2,315 °C (4,200 °F). Every shipment includes the producing mill's chemical purity Certificate of Analysis (reporting metallic and interstitial O, N, C, H trace levels in ppm) and pre-shipment dimensional verification.

### Nominal Properties
- **Composition & CAS #:** W5Re / W26Re & W3Re / W25Re (CAS 7440-15-5)
- **Purity / Alloy Grade:** Matched EMF Calibration Grade (ASTM E988 / IEC 60584 Type C & Type D)
- **Density:** 19.3–19.7 g/cm³
- **Melting Point:** 3,020–3,350 °C
- **Available Mill & Machined Forms:** Matched Bare Wire Pairs Ø 0.127 mm (0.005"), 0.25 mm (0.010"), 0.38 mm, 0.50 mm + Al2O3/HfO2/BN Insulators

### Applications
- 2,315 °C (4,200 °F) hot-zone temperature control in vacuum, argon, and hydrogen sintering furnaces
- Sapphire crystal growth, SPS spark-plasma sintering, and HIP furnace instrumentation
- Complete thermocouple assemblies paired with 2-bore 99.8% Al2O3, BeO-free HfO2, and Mo/Ta protection sheaths
- High-temperature thermal analysis (DTA/TGA) sensor repairs

### Buyer Specification Guide
Specify W5Re / W26Re & W3Re / W25Re purity or alloy grade (Matched EMF Calibration Grade (ASTM E988 / IEC 60584 Type C & Type D)), form and dimensions (Matched Bare Wire Pairs Ø 0.127 mm (0.005"), 0.25 mm (0.010"), 0.38 mm, 0.50 mm + Al2O3/HfO2/BN Insulators), surface finish (rolled, ground, electropolished, or chemically cleaned), and quantity.

### Technical FAQs
- **Q: What atmosphere is required when operating Tungsten-Rhenium thermocouple wire (type c, type d & type g) & probes (W5Re / W26Re & W3Re / W25Re) at high temperature?**
  A: Refractory metals oxidize in air above 400–500 °C; operate in high vacuum (≤10⁻⁴ Torr), high-purity argon/helium, or reducing hydrogen/forming-gas atmospheres.
- **Q: Can TB-WRE-TC be custom machined to our engineering print?**
  A: Yes. Attach a STEP/DXF/PDF drawing on the RFQ page for precision CNC turning, milling, wire-EDM, laser cutting, or forming with small-batch R&D minimums.
- **Q: What certification ships with Tungsten-Rhenium thermocouple wire (type c, type d & type g) & probes?**
  A: All shipments include the producing mill's batch chemical Certificate of Analysis (ICP/GDMS trace impurities and interstitial gas content) and dimensional verification.

---
## Tungsten-Copper (WCu) & Molybdenum-Copper (MoCu) Thermal Submounts & Electrodes (`TB-W-CU`)
- **URL:** https://tensilebase.com/products/tungsten-heavy-alloy-wna-wcu-heat-sinks/
- **Quote URL:** https://tensilebase.com/quote.html?product=tungsten-heavy-alloy-wna-wcu-heat-sinks
- **Category:** Refractory Metals
- **Chemical Formula:** WCu (90/10, 80/20, 75/25) & MoCu (85/15, 70/30) (Elements: W, Mo, Cu)
- **CAS Registry Number:** 7440-33-7
- **Synonyms:** High-purity WCu (90/10, 80/20, 75/25) & MoCu (85/15, 70/30) refractory metal, vacuum furnace Tungsten-Copper (WCu) & Molybdenum-Copper (MoCu) thermal submounts & electrodes, Vacuum Cu-Infiltrated Composite (Zero Open Porosity, Hermetic) WCu (90/10, 80/20, 75/25) & MoCu (85/15, 70/30)
- **Purity / Grades:** Vacuum Cu-Infiltrated Composite (Zero Open Porosity, Hermetic)
- **Typical Dimensions:** Plates, Sheets (0.25–25 mm), Rods, & CNC-Machined Ni/Au-Plated RF Flanges
- **Configurations:** Standard mill stock & precision CNC / wire-EDM custom machining to drawing
- **Typical Lead Time:** 7–15 business days
- **Documentation Included:** Manufacturer Mill Test Certificate / Batch COA (chemical purity and interstitial O, N, C, H ppm analysis) plus dimensional inspection report.

### Technical Overview
Consolidated by powder metallurgy, vacuum arc remelting (VAR), or electron-beam melting and stress-relieved for high-temperature dimensional stability, our Tungsten-Copper (WCu) & Molybdenum-Copper (MoCu) thermal submounts & electrodes (WCu (90/10, 80/20, 75/25) & MoCu (85/15, 70/30), CAS 7440-33-7) products deliver reliable performance in vacuum, inert-gas, and reducing furnace atmospheres.

By infiltrating a porous sintered tungsten or molybdenum skeleton with oxygen-free copper, WCu and MoCu composites combine tunable low thermal expansion (CTE 6.5–11.5 ppm/K, matching GaN/SiC, GaAs, AlN, and Al2O3) with high thermal conductivity (180–240 W/m·K). Every shipment includes the producing mill's chemical purity Certificate of Analysis (reporting metallic and interstitial O, N, C, H trace levels in ppm) and pre-shipment dimensional verification.

### Nominal Properties
- **Composition & CAS #:** WCu (90/10, 80/20, 75/25) & MoCu (85/15, 70/30) (CAS 7440-33-7)
- **Purity / Alloy Grade:** Vacuum Cu-Infiltrated Composite (Zero Open Porosity, Hermetic)
- **Density:** 14.5–17.0 (WCu) / 9.7–10.0 (MoCu) g/cm³
- **Melting Point:** Cu phase 1,085 / W skeleton 3,422 °C
- **Available Mill & Machined Forms:** Plates, Sheets (0.25–25 mm), Rods, & CNC-Machined Ni/Au-Plated RF Flanges

### Applications
- CTE-matched thermal submounts and RF power package flanges for GaN-on-SiC, GaAs, and laser diodes
- Sinker EDM and PCD (polycrystalline diamond) erosion machining electrodes
- High-voltage SF6 circuit-breaker arc contacts and pulsed-power rail electrodes
- Resistance-welding electrodes and aerospace counterweight/damping blocks

### Buyer Specification Guide
Specify WCu (90/10, 80/20, 75/25) & MoCu (85/15, 70/30) purity or alloy grade (Vacuum Cu-Infiltrated Composite (Zero Open Porosity, Hermetic)), form and dimensions (Plates, Sheets (0.25–25 mm), Rods, & CNC-Machined Ni/Au-Plated RF Flanges), surface finish (rolled, ground, electropolished, or chemically cleaned), and quantity.

### Technical FAQs
- **Q: What atmosphere is required when operating Tungsten-Copper (WCu) & Molybdenum-Copper (MoCu) thermal submounts & electrodes (WCu (90/10, 80/20, 75/25) & MoCu (85/15, 70/30)) at high temperature?**
  A: Refractory metals oxidize in air above 400–500 °C; operate in high vacuum (≤10⁻⁴ Torr), high-purity argon/helium, or reducing hydrogen/forming-gas atmospheres.
- **Q: Can TB-W-CU be custom machined to our engineering print?**
  A: Yes. Attach a STEP/DXF/PDF drawing on the RFQ page for precision CNC turning, milling, wire-EDM, laser cutting, or forming with small-batch R&D minimums.
- **Q: What certification ships with Tungsten-Copper (WCu) & Molybdenum-Copper (MoCu) thermal submounts & electrodes?**
  A: All shipments include the producing mill's batch chemical Certificate of Analysis (ICP/GDMS trace impurities and interstitial gas content) and dimensional verification.

---
## Magnesia (MgO 99.4%–99.8%) Crucibles, Tubes & Setter Plates (`TB-MGO-CR`)
- **URL:** https://tensilebase.com/products/magnesia-mgo-ceramic-crucibles-tubes/
- **Quote URL:** https://tensilebase.com/quote.html?product=magnesia-mgo-ceramic-crucibles-tubes
- **Category:** Technical Ceramics
- **Chemical Formula:** MgO (Elements: Mg, O)
- **CAS Registry Number:** 1309-48-4
- **Synonyms:** Magnesium oxide melting crucible, PZT/BaTiO3 lead-loss setter plate, basic slag resistant ceramic
- **Purity / Grades:** 99.4% – 99.8% High-Purity Sintered Magnesia
- **Typical Dimensions:** Crucibles 5 mL to 2,000 mL; Setter Plates & Tubes
- **Configurations:** Dense slip-cast (~96–98% TD) or thermal-shock-resistant porous grade
- **Typical Lead Time:** 8–15 business days
- **Documentation Included:** Manufacturer Lot COA (MgO assay, CaO/SiO2/Fe2O3 trace levels, bulk density) and dimensional check.

### Technical Overview
With a melting point of 2,852 °C and strong thermodynamic stability against basic slags, molten nickel/iron/cobalt superalloys, and volatile lead or alkali oxides, high-purity sintered magnesia (MgO) outperforms alumina and silica in basic high-temperature environments.

Our 99.4%–99.8% MgO crucibles and setter plates are widely used to sinter piezoelectric PZT, PLZT, BaTiO3, and Na-β"-alumina without chemical reaction or lead/sodium leaching, as well as for clean vacuum induction melting of superalloys and uranium/actinide surrogates.

### Nominal Properties
- **Formula & CAS #:** MgO (CAS 1309-48-4)
- **Purity:** 99.4% – 99.8% MgO (Low SiO2 / Fe2O3)
- **Bulk Density:** 3.40 – 3.52 g/cm³
- **Max Service Temp:** 2,000 – 2,200 °C (Moderate ramp 3–5 °C/min)
- **Key Advantage:** Inert to basic fluxes, PbO vapor, Li2O, and molten Ni/Fe alloys

### Applications
- Closed-sagger sintering of piezoelectric PZT, PMN-PT, and BaTiO3 (prevents PbO reaction)
- Vacuum induction melting (VIM) of Ni, Co, and Fe-base superalloys
- Sintering of Na-β"-alumina solid electrolytes and lithium garnet (LLZO) pellets
- Molten halide salt and basic flux containment

### Buyer Specification Guide
Specify crucible capacity or OD × ID × height, dense vs. thermal-shock grade, operating temperature/ramp rate, and quantity.

### Technical FAQs
- **Q: Why use MgO setter plates instead of Al2O3 when sintering PZT or LLZO?**
  A: Alumina reacts with volatile PbO (from PZT) and Li2O (from LLZO) to form low-permittivity aluminates; high-purity MgO is thermodynamically inert toward both PbO and Li2O.
- **Q: What heating ramp rate is recommended for MgO crucibles?**
  A: Because MgO has a relatively high thermal expansion coefficient (~13.5 × 10⁻⁶ /K), ramp at ≤3–5 °C/min to prevent thermal-gradient cracking.
- **Q: How should MgO ceramics be stored?**
  A: Store in dry sealed bags or a desiccator cabinet to prevent slow surface hydration to Mg(OH)2 in humid air.

---
## Zirconia-Toughened Alumina (ZTA) Structural & Wear Components (`TB-ZTA-CM`)
- **URL:** https://tensilebase.com/products/zirconia-toughened-alumina-zta-ceramics/
- **Quote URL:** https://tensilebase.com/quote.html?product=zirconia-toughened-alumina-zta-ceramics
- **Category:** Technical Ceramics
- **Chemical Formula:** Al2O3-ZrO2 (10–20 wt% YSZ) (Elements: Al, Zr, Y, O)
- **CAS Registry Number:** 1344-28-1
- **Synonyms:** Transformation-toughened alumina-zirconia composite, ZTA wear sleeves and pump plungers
- **Purity / Grades:** 80–90% Al2O3 + 10–20% 3Y-TZP Composite
- **Typical Dimensions:** Rods, Plates, Plungers, Valve Seats, & CNC-Ground Drawings
- **Configurations:** Cold Isostatically Pressed (CIP) or HIP-densified; Diamond-lapped Ra < 0.05 µm
- **Typical Lead Time:** 10–16 business days
- **Documentation Included:** Manufacturer Lot COA (composition, sintered density, hardness) and CMM dimensional inspection report.

### Technical Overview
By dispersing sub-micron metastable tetragonal zirconia (10–20 wt% 3Y-TZP) uniformly within a high-purity α-alumina matrix, Zirconia-Toughened Alumina (ZTA) bridges the gap between standard 99.5% alumina and pure YSZ zirconia.

Stress-induced tetragonal-to-monoclinic phase transformation at crack tips nearly doubles fracture toughness over monolithic alumina while retaining higher hardness, higher thermal conductivity, and lower cost than pure zirconia.

### Nominal Properties
- **Composition:** 80–90 wt% Al2O3 + 10–20 wt% YSZ
- **Bulk Density:** 4.10 – 4.35 g/cm³
- **Flexural Strength:** 650 – 850 MPa
- **Fracture Toughness (KIC):** 6.0 – 8.0 MPa·m½
- **Vickers Hardness:** 1,600 – 1,750 HV10

### Applications
- High-pressure homogenizer pistons, metering pump plungers, and mechanical seal rings
- Abrasive slurry check-valve balls, seats, and hydrocyclone wear liners
- Precision grinding spindles, guide rollers, and wire-drawing capstans
- Orthopedic and biomedical structural load-bearing prototypes

### Buyer Specification Guide
Specify stock dimensions or attach a 2D/3D engineering drawing with concentricity and surface-finish requirements.

### Technical FAQs
- **Q: When should I select ZTA over standard 99.5% Alumina or pure 3Y-TZP Zirconia?**
  A: Choose ZTA when 99.5% alumina chips or fractures under mechanical impact, but you need higher hardness, better thermal conductivity, and lower material cost than 100% YSZ.
- **Q: Does ZTA resist hydrothermal aging better than monolithic YSZ?**
  A: Yes. Because the alumina matrix encapsulates and constrains the dispersed zirconia grains, ZTA resists low-temperature hydrothermal degradation in steam and hot water.
- **Q: Can ZTA be diamond ground and lapped to mirror finishes?**
  A: Yes. Fine-grained ZTA polishes to Ra < 0.02–0.05 µm for low-friction dynamic fluid seals.

---
## Microporous Alumina & SiC Ceramic Plates, Filters & Wafer Vacuum Chucks (`TB-POR-CK`)
- **URL:** https://tensilebase.com/products/porous-alumina-sic-ceramic-vacuum-chucks/
- **Quote URL:** https://tensilebase.com/quote.html?product=porous-alumina-sic-ceramic-vacuum-chucks
- **Category:** Technical Ceramics
- **Chemical Formula:** Al2O3 / SiC (Controlled Open Porosity) (Elements: Al, Si, C, O)
- **CAS Registry Number:** 1344-28-1
- **Synonyms:** Porous ceramic wafer chuck, air-bearing porous pad, gas sparger & filtration plate
- **Purity / Grades:** Controlled Pore Size 1 µm to 100 µm (30%–48% Open Porosity)
- **Typical Dimensions:** Discs Ø 25–350 mm, Rectangular Plates, & Bonded Dense-Border Vacuum Chucks
- **Configurations:** Pure Microporous Discs or Dense-Alumina Framed Semiconductor Wafer Chucks
- **Typical Lead Time:** 10–18 business days
- **Documentation Included:** Manufacturer Lot COA (mean pore size, open porosity %, flatness inspection report).

### Technical Overview
Sintered with narrowly graded pore-forming templates and diamond surface-ground to micron-level flatness, our microporous alumina (Al2O3) and silicon carbide (SiC) plates distribute vacuum hold-down force or pressurized air films uniformly across their entire surface without localized dimple distortion.

Available as standalone porous discs/blocks or hermetically co-fired/bonded into a dense ceramic housing with vacuum ports for 2-inch through 12-inch (300 mm) wafer dicing, thinning, inspection, and lithography stages.

### Nominal Properties
- **Materials:** 99% Al2O3 or Recrystallized/Bonded SiC
- **Mean Pore Diameter:** 1–5 µm, 10–20 µm, 30–50 µm, or 60–100 µm
- **Open Porosity:** 32% – 45%
- **Surface Flatness / Parallelism:** ≤ 2 – 5 µm across Ø 150–200 mm
- **Max Temp (Unbonded Disc):** 1,200 – 1,500 °C

### Applications
- Semiconductor wafer vacuum hold-down chucks for thinned Si, SiC, GaN, and sapphire wafers
- Frictionless aerostatic porous ceramic air-bearing pads and linear stages
- High-temperature molten salt, hot gas, and corrosive solvent filtration membranes
- Uniform fluidization spargers and capillary wicking plates

### Buyer Specification Guide
Specify wafer or plate diameter × thickness, target pore size (µm), standalone porous disc vs. dense-ring vacuum chuck assembly, and flatness requirement.

### Technical FAQs
- **Q: Why use a microporous ceramic vacuum chuck instead of a grooved metal chuck?**
  A: Grooved chucks leave localized stress rings that crack or warp ultra-thin (<100 µm) Si, SiC, or sapphire wafers; microporous ceramic supports 100% of the wafer area evenly.
- **Q: What pore size is best for wafer vacuum chucks?**
  A: Fine 3–15 µm pore grades provide high capillary pressure drop, preventing vacuum loss even if a smaller wafer only partially covers the chuck.
- **Q: How do you clean clogged pores in a porous ceramic plate?**
  A: Ultrasonic cleaning in acetone/IPA followed by reverse back-flushing with clean dry nitrogen or baking at 400–600 °C restores full permeability.

---
## Titanium Diboride (TiB2) Conductive Ceramics & Intermetallic Evaporation Boats (`TB-TIB2-CM`)
- **URL:** https://tensilebase.com/products/titanium-diboride-tib2-evaporation-boats-ceramics/
- **Quote URL:** https://tensilebase.com/quote.html?product=titanium-diboride-tib2-evaporation-boats-ceramics
- **Category:** Technical Ceramics
- **Chemical Formula:** TiB2 / TiB2-BN-AlN (Elements: Ti, B, N, Al)
- **CAS Registry Number:** 12045-63-5
- **Synonyms:** Conductive ceramic evaporation boat, aluminum metallizing boat, monolithic TiB2 armor/electrode plate
- **Purity / Grades:** Hot-Pressed Monolithic TiB2 (≥98% TD) & 2-/3-Component TiB2-BN-AlN Boats
- **Typical Dimensions:** Evaporation Boats (100–150 mm), Plates, Discs, & EDM-Machined Shapes
- **Configurations:** Tailored electrical resistivity (200–1,500 µΩ·cm for boats; ~15 µΩ·cm for pure TiB2)
- **Typical Lead Time:** 8–15 business days
- **Documentation Included:** Manufacturer Lot COA (composition, bulk density, room-temperature electrical resistivity) and dimensional check.

### Technical Overview
Titanium diboride (TiB2) is an ultra-hard refractory boride (MP ~3,225 °C, hardness ~2,800–3,200 HV) that conducts electricity like a metal (~9–15 µΩ·cm) and is completely wetted by—yet chemically resistant to—molten aluminum and cryolite.

We supply both monolithic hot-pressed TiB2 plates/crucibles (which can be shaped by wire-EDM!) and hot-pressed composite TiB2–BN–AlN intermetallic evaporation boats engineered for continuous wire-fed and batch thermal evaporation of aluminum.

### Nominal Properties
- **Formula & CAS #:** TiB2 (CAS 12045-63-5) / TiB2-BN-AlN
- **Density:** 4.48 g/cm³ (Pure TiB2) / 2.8–3.1 g/cm³ (Composite Boat)
- **Melting / Operating Temp:** 3,225 °C (Pure TiB2) / 1,450–1,650 °C (Boat)
- **Electrical Resistivity (RT):** ~15 µΩ·cm (Pure) / 300–1,200 µΩ·cm (Tuned Boat)
- **Vickers Hardness:** 2,800 – 3,200 HV (Monolithic TiB2)

### Applications
- Continuous wire-fed and batch thermal evaporation boats for aluminum metallization
- Hall-Héroult aluminum reduction cell wettable cathode tiles and molten Al level sensors
- Wire-EDM machinable ultra-hard wear nozzles, cutting inserts, and ballistic tiles
- High-temperature electrically conductive heater elements and EDM electrodes

### Buyer Specification Guide
Specify monolithic pure TiB2 plate/disc vs. TiB2-BN composite evaporation boat, dimensions (e.g., 110×15×10 mm with cavity), and target resistivity range.

### Technical FAQs
- **Q: Why are TiB2-BN composite boats preferred over tungsten coils for large-area aluminum evaporation?**
  A: Molten aluminum alloys with and dissolves tungsten filaments after a few runs, whereas TiB2-BN ceramic boats are evenly wetted by molten Al with long multi-hour service life.
- **Q: Can monolithic hot-pressed TiB2 be machined by Wire-EDM?**
  A: Yes! Because pure TiB2 has metallic electrical conductivity (~15 µΩ·cm), complex profiles can be cut rapidly by wire-EDM alongside diamond grinding.
- **Q: Are custom cavity geometries available for TiB2-BN boats?**
  A: Yes. Rectangular, oval, and multi-dimple top cavities can be milled to match your wire-feed rate or charge weight.

---
## Multi-Bore Alumina (99.7% Al2O3) Thermocouple Insulator Beads & Rods (`TB-AL2O3-MB`)
- **URL:** https://tensilebase.com/products/alumina-mullite-multi-bore-thermocouple-insulators/
- **Quote URL:** https://tensilebase.com/quote.html?product=alumina-mullite-multi-bore-thermocouple-insulators
- **Category:** Technical Ceramics
- **Chemical Formula:** Al2O3 (99.7% C799) (Elements: Al, O)
- **CAS Registry Number:** 1344-28-1
- **Synonyms:** 2-hole and 4-hole ceramic thermocouple tubing, Type R/S/B/C thermocouple insulator rod
- **Purity / Grades:** 99.7% Recrystallized Alumina (DIN VDE 0335 Type C799)
- **Typical Dimensions:** OD 0.8 mm to 25 mm × 2-Bore, 4-Bore, or 6-Bore × Lengths 5 mm to 1,500 mm
- **Configurations:** Continuous extruded rods or precision-sliced fish-spine/cylindrical beads
- **Typical Lead Time:** 5–12 business days
- **Documentation Included:** Manufacturer Lot COA (Al2O3 purity ≥99.7%, SiO2/Fe2O3 ppm, bulk density) and bore-gauge check.

### Technical Overview
Even trace silica (SiO2) or iron impurities in low-grade ceramic insulators vaporize above 1,200 °C and poison Platinum-Rhodium (Type R/S/B) and Tungsten-Rhenium (Type C/D) thermocouple junctions, causing severe EMF calibration drift.

Our 99.7% C799 recrystallized alumina multi-bore insulators contain <0.1% SiO2 and maintain high electrical volume resistivity (>10⁸ Ω·cm at 1,000 °C) up to 1,750 °C in air, vacuum, or inert gas.

### Nominal Properties
- **Material Grade:** 99.7% α-Al2O3 (C799 Low-Silica)
- **Bore Configurations:** Single, 2-Bore, 4-Bore, 6-Bore, & Oval
- **Standard OD Range:** 0.8 mm, 1.2 mm, 1.6 mm, 2.4 mm, 3.0 mm, 4.0 mm, 4.7 mm, 5.5 mm, 6.35 mm, 8.0 mm
- **Standard ID Bore Range:** 0.25 mm to 2.5 mm
- **Max Working Temp:** 1,750 °C

### Applications
- Electrical isolation of Pt-Rh (Type R, S, B) and W-Re (Type C, D) bare thermocouple wires
- Dual-junction (4-bore) redundant furnace control and over-temperature safety probes
- Ultra-high-vacuum (UHV) multi-pin electrical feedthroughs and e-beam gun standoffs
- Coil support rods and micro-capillary gas delivery channels

### Buyer Specification Guide
Specify number of bores (2-bore or 4-bore), outer diameter (OD), inner bore diameter (ID), length (or cut bead length), and quantity.

### Technical FAQs
- **Q: Why must Platinum-Rhodium thermocouples use ≥99.7% alumina instead of mullite or 95% alumina?**
  A: At high temperatures, silica (SiO2) in lower-purity ceramics reduces to volatile SiO, which alloys with platinum wire to form brittle low-melting platinum silicide.
- **Q: Can I order matching closed-end outer protection sheaths?**
  A: Yes. Pair multi-bore inner insulators with our gas-tight single-closed-end 99.7% Al2O3 outer protection tubes (TB-AL2O3-TU).
- **Q: Are short cut insulator beads available for flexible probe routing?**
  A: Yes. Both full-length rods (100–1,500 mm) and precision-cut short beads (3–25 mm) are stocked and custom cut.

---
## Semiconductor Fused Quartz Beakers, Wet-Bench Tanks & Vacuum Bell Jars (`TB-SIO2-BK`)
- **URL:** https://tensilebase.com/products/fused-quartz-crucibles-dishes-beakers/
- **Quote URL:** https://tensilebase.com/quote.html?product=fused-quartz-crucibles-dishes-beakers
- **Category:** Fused Quartz & Substrates
- **Chemical Formula:** SiO2 (99.995%) (Elements: Si, O)
- **CAS Registry Number:** 60676-86-0
- **Synonyms:** Semiconductor RCA acid-etch quartz tank and beaker, flanged PVD/CVD quartz vacuum bell jar
- **Purity / Grades:** 99.995% Semiconductor & Trace-Metal Analytical Grade
- **Typical Dimensions:** Beakers 25 mL to 5,000 mL; Rectangular RCA Wet-Bench Tanks; Flanged Quartz Bell Jars
- **Configurations:** Clear fire-polished fused quartz with pouring spouts, tank flanges & O-ring collars
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (trace metallic impurity ICP analysis in ppm) and visual/dimensional inspection.

### Technical Overview
Flame-worked from 4N5+ fused quartz tubing and boules, our analytical quartz labware introduces virtually zero Na, K, Fe, Cu, or B background contamination during trace-metal acid digestions, RCA wafer cleaning, and high-temperature phosphor or battery-cathode calcination.

With a thermal expansion coefficient of just 0.55 × 10⁻⁶ /K, fused quartz crucibles and dishes withstand rapid heating and air quenching up to 1,150 °C without cracking.

### Nominal Properties
- **Material Purity:** ≥ 99.995% SiO2 (< 15–20 ppm total metallic impurities)
- **Continuous / Peak Temp:** 1,100 °C Continuous / 1,250 °C Short-Term
- **Thermal Shock Tolerance:** Withstands 1,000 °C → Water Quench
- **Acid Resistance:** Inert to all acids except HF and hot H3PO4 (>300 °C)
- **Available Forms:** Tall/Low-Form Crucibles, Beakers, Dishes, Flasks, & Bell Jars

### Applications
- ICP-MS / AAS trace-element dry ashing and boiling HCl / HNO3 / H2SO4 / aqua regia digestion
- Semiconductor wet-bench RCA cleaning tanks, boiling beakers, and HF-etch dip baths
- High-purity phosphor, catalyst, and silica-aerogel calcination crucibles
- Custom flanged cylindrical and domed quartz vacuum PVD/CVD bell jars

### Buyer Specification Guide
Specify vessel type (crucible, beaker, evaporating dish, or flanged bell jar), nominal volume (mL/L) or OD × height × wall thickness, lid style, and quantity.

### Technical FAQs
- **Q: Can fused quartz crucibles be used with alkaline fluxes or KOH?**
  A: Avoid strong caustic alkalis (NaOH, KOH, Na2CO3) and basic oxides at high temperature, as they react with SiO2 to form silicates; use Nickel (TB-NI-ML) or Zirconium (TB-ZR-ML) crucibles for alkali fusions.
- **Q: How do I prevent fingerprint devitrification on quartz labware above 1,000 °C?**
  A: Wipe outer surfaces with isopropanol or ethanol and handle with clean cotton/nitrile gloves before heating, as skin-oil sodium accelerates cristobalite devitrification above 1,050 °C.
- **Q: Can you fabricate custom-port quartz reaction vessels or bell jars?**
  A: Yes. Send a sketch or CAD drawing with ground-glass joints (14/20, 24/40), KF/CF flange collars, or sidearms.

---
## UV-VIS-NIR Fused Quartz Spectrophotometer & Fluorometer Cuvettes (190–2,500 nm) (`TB-SIO2-CV`)
- **URL:** https://tensilebase.com/products/quartz-uv-vis-nir-spectrophotometer-cuvettes/
- **Quote URL:** https://tensilebase.com/quote.html?product=quartz-uv-vis-nir-spectrophotometer-cuvettes
- **Category:** Fused Quartz & Substrates
- **Chemical Formula:** SiO2 (JGS1 / JGS2 / JGS3) (Elements: Si, O)
- **CAS Registry Number:** 60676-86-0
- **Synonyms:** 10 mm UV quartz cuvette, 4-side polished fluorometer quartz cell, flow-through & anaerobic screw-cap cuvette
- **Purity / Grades:** JGS1 Synthetic Far-UV Quartz (190–2,500 nm) & JGS3 IR Quartz (260–3,500 nm)
- **Typical Dimensions:** Path Lengths: 1 mm, 2 mm, 5 mm, 10 mm, 20 mm, 50 mm, 100 mm (Standard 12.5×12.5×45 mm OD)
- **Configurations:** Direct-Fused (Glue-Free / Frit-Fused) 2-Window Abs. & 4-Window Fluorescence Cells
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot COA (spectral transmission verification at 200/220/240 nm and path-length tolerance).

### Technical Overview
Assembled by high-temperature direct thermal fusion without epoxy or low-melting glass adhesives, our JGS1 synthetic UV quartz cuvettes resist concentrated acids, organic solvents (toluene, chloroform, DMF, DMSO, THF), and ultrasonic cleaning while delivering >80%–83% empty-cell transmission from 190 nm deep-UV through 2,500 nm NIR.

We supply standard 10 mm macro (3.5 mL), semi-micro (1.4 mL), sub-micro (50–700 µL), 4-window fluorescence, flow-through HPLC, cylindrical, and septum screw-cap anaerobic cells.

### Nominal Properties
- **Quartz Grade:** JGS1 Far-UV Synthetic Silica (190 – 2,500 nm); Optional JGS3 IR (to 3,500 nm)
- **Empty Cell Transmission:** > 80% at 200 nm (Paired matching ≤ 0.5%)
- **Bonding Method:** High-Temperature Direct Thermal Fusion (Zero Glue/Adhesive)
- **Optical Path Lengths:** 0.1 mm, 1 mm, 2 mm, 5 mm, 10 mm, 20 mm, 50 mm, 100 mm
- **Standard Outer Footprint:** 12.5 × 12.5 × 45 mm (Fits all Agilent, Shimadzu, Thermo, PerkinElmer, Horiba holders)

### Applications
- UV-VIS-NIR absorbance spectrophotometry (DNA/RNA 260/280 nm, protein, nanoparticle plasmonics)
- 4-window right-angle fluorescence, photoluminescence, and Raman spectroscopy
- Dynamic light scattering (DLS) particle sizing and zeta-potential cells
- Air-sensitive organometallic and photocatalysis reactions (GL14 screw-cap septum quartz cells)

### Buyer Specification Guide
Specify cell style (2-window UV-VIS vs. 4-window fluorescence, macro vs. micro/sub-micro, PTFE stopper vs. GL14 screw cap), optical path length (e.g., 10 mm), and pack count.

### Technical FAQs
- **Q: Are these quartz cuvettes glued or thermally fused?**
  A: All our quartz cuvettes are assembled by high-temperature thermal/frit fusion with zero organic adhesive, making them safe for harsh solvents and acids.
- **Q: What is the difference between JGS1 UV quartz and JGS3 IR quartz cuvettes?**
  A: JGS1 excels in the deep-UV (190–2,500 nm) with a small OH absorption dip near 2,700 nm; JGS3 (<5 ppm OH) eliminates the 2,700 nm dip for NIR measurements out to 3,500 nm.
- **Q: Are matched sets of 2 or 4 cuvettes available?**
  A: Yes. Matched pairs and 4-packs are sorted so transmission at 220 nm agrees within ≤0.5%.

---
## Sintered Porous Quartz Fritted Discs, Precision Quartz Rods & Micro-Capillaries (`TB-SIO2-FR`)
- **URL:** https://tensilebase.com/products/quartz-capillary-tubes-rods-frits/
- **Quote URL:** https://tensilebase.com/quote.html?product=quartz-capillary-tubes-rods-frits
- **Category:** Fused Quartz & Substrates
- **Chemical Formula:** SiO2 (99.99%) (Elements: Si, O)
- **CAS Registry Number:** 60676-86-0
- **Synonyms:** Porous quartz catalyst bed frit, G0–G4 sintered silica filter disc, X-ray diffraction quartz capillary
- **Purity / Grades:** 99.99% Fused Quartz (Porous Grades G00/G0/G1/G2/G3/G4/G5 & Solid/Capillary)
- **Typical Dimensions:** Frits Ø 4–150 mm × 1.5–6 mm; Solid Rods Ø 1–60 mm; Capillaries ID 0.1–4 mm
- **Configurations:** Standalone porous frits, pre-fused fritted reactor tubes, & centerless-ground rods
- **Typical Lead Time:** 6–12 business days
- **Documentation Included:** Manufacturer Lot COA (SiO2 purity, nominal pore rating G0–G5, dimensional check).

### Technical Overview
Sintered from graded 99.99% fused quartz grains without any foreign binder, our porous quartz fritted discs can be flame-sealed directly inside quartz reactor tubes (TB-SIO2-TU) or ordered as standalone discs to support fixed-bed catalyst powders up to 1,100 °C.

We also supply solid optical-grade fused quartz stir rods/lightguides and precision micro-capillary tubing for X-ray diffraction (XRD), GC/MS interfaces, and fiber splicing.

### Nominal Properties
- **Frit Porosity Grades:** G0 (160–250 µm), G1 (100–160 µm), G2 (40–100 µm), G3 (16–40 µm), G4 (10–16 µm), G5 (2–5 µm)
- **Chemical Purity:** ≥ 99.99% SiO2 (Binder-Free Sintered Quartz)
- **Max Service Temp:** 1,050 – 1,100 °C
- **Frit Diameter Range:** Ø 4 mm to Ø 150 mm (Thickness 2–6 mm)
- **Rod & Capillary Range:** Rods Ø 1–60 mm; Capillaries ID 0.1–4.0 mm

### Applications
- Fixed-bed heterogeneous catalysis plug-flow reactor supports (standalone or pre-fused in quartz tubes)
- High-temperature corrosive gas dispersion spargers and hot particulate filtration
- Optical light-pipe homogenizers, furnace push rods, and low-CTE structural spacers
- Precision quartz micro-capillaries for synchrotron XRD, microfluidics, and laser delivery

### Buyer Specification Guide
Specify product form (porous frit disc, frit pre-sealed inside a quartz tube, solid rod, or capillary), porosity grade (G0–G5), diameter × thickness/length, and quantity.

### Technical FAQs
- **Q: Which porosity grade (G0–G4) should I pick for a fixed-bed catalyst reactor?**
  A: Choose G2 (40–100 µm) or G3 (16–40 µm) to retain fine catalyst powders while maintaining low gas pressure drop across the bed.
- **Q: Can you flame-weld a quartz frit inside the middle of a quartz furnace tube?**
  A: Yes! Specify the tube OD × ID × length and the exact distance from the end where the porous quartz frit should be fused.
- **Q: Do porous quartz frits contain any binder that could contaminate our catalyst?**
  A: No. They are sintered from 100% pure fused silica particles with zero binders or fluxes.

---
## CVD SiC-Coated & TaC-Coated Graphite Susceptors, Wafer Carriers & Heaters (`TB-GR-SIC`)
- **URL:** https://tensilebase.com/products/sic-coated-graphite-susceptors-wafers/
- **Quote URL:** https://tensilebase.com/quote.html?product=sic-coated-graphite-susceptors-wafers
- **Category:** Graphite Components
- **Chemical Formula:** C + CVD β-SiC (80–150 µm) / TaC (Elements: C, Si, Ta)
- **CAS Registry Number:** 409-21-2
- **Synonyms:** MOCVD / SiC / GaN epitaxial wafer carrier susceptor, TaC-coated SiC PVT crucible & guide ring
- **Purity / Grades:** < 5 ppm Purified Isostatic Graphite + 6N CVD β-SiC or Sintered TaC Coating
- **Typical Dimensions:** 2", 4", 6", 8" Wafer Pocket Susceptors, Multi-Wafer Planetary Discs, & Custom Heaters
- **Configurations:** CTE-matched isostatic graphite core + dense pinhole-free CVD β-SiC or TaC encapsulation
- **Typical Lead Time:** 14–22 business days
- **Documentation Included:** Manufacturer Lot COA (graphite ash <5 ppm, coating thickness XRF/cross-section, pinhole check, and CMM pocket inspection).

### Technical Overview
Bare graphite outgasses carbon dust and reacts with hydrogen (H2), ammonia (NH3), silane (SiH4), and chlorosilanes inside epitaxial reactors. By machining CTE-matched ultra-pure (<5 ppm ash) isostatic graphite and encapsulating it in a dense, pinhole-free 80–150 µm layer of 6N CVD cubic β-SiC (or 2,200 °C-rated TaC), our susceptors combine graphite's RF induction coupling and thermal shock resistance with hermetic semiconductor cleanliness.

We fabricate single-wafer and multi-wafer pocket susceptors, showerheads, liner rings, and laser-cut serpentine heaters to customer drawings.

### Nominal Properties
- **Core Material:** Purified Isostatic Graphite (< 5 ppm ash, CTE 4.5–4.8 × 10⁻⁶ /K)
- **Coating Options:** CVD β-SiC (80–150 µm, 99.9999%) or Sintered/CVD TaC (30–80 µm)
- **Coating Density:** 3.21 g/cm³ (β-SiC, zero open porosity) / 14.3 g/cm³ (TaC)
- **Max Operating Temp:** 1,650 °C (CVD SiC in H2/NH3) / 2,200 °C (TaC in Ar/N2)
- **Pocket Flatness:** ≤ 0.01 – 0.02 mm CNC-machined before coating

### Applications
- MOCVD epitaxial growth of GaN, AlGaN, InGaN, and AlN LED/HEMT wafers (NH3 + H2 resistant)
- CVD homoepitaxial growth of 4H-SiC power device layers at 1,550–1,650 °C (SiC- or TaC-coated)
- Physical Vapor Transport (PVT) SiC and AlN crystal growth seed holders and guide rings (TaC-coated to 2,200 °C)
- Silicon epitaxial barrel/pancake susceptors and RTP lamp-heated wafer trays

### Buyer Specification Guide
Attach a 2D/3D engineering drawing or specify wafer pocket size (2", 4", 6", 8"), outer susceptor diameter, CVD SiC vs. TaC coating, and operating gas/temperature.

### Technical FAQs
- **Q: When should I choose TaC coating over CVD SiC coating on graphite?**
  A: CVD SiC is ideal up to 1,650 °C in MOCVD and Si/SiC epitaxy; above 1,700–1,800 °C (such as SiC or AlN PVT crystal growth up to 2,200 °C), choose Tantalum Carbide (TaC) coating.
- **Q: Why must the graphite core be CTE-matched to the SiC coating?**
  A: Matching the isotropic graphite CTE (~4.5–4.8 ppm/K) to β-SiC (~4.5 ppm/K) prevents coating delamination or micro-cracking during rapid thermal cycling.
- **Q: Can you machine custom gas channels and thermocouple bores before coating?**
  A: Yes. All pockets, lift-pin holes, and thermocouple wells are precision CNC-machined and halogen-purified prior to CVD coating so every exposed surface is sealed.

---
## Carbon-Carbon (C/C) Composite Plates, Charging Grids, Channels & Fasteners (`TB-CFC-PL`)
- **URL:** https://tensilebase.com/products/carbon-carbon-cfc-composite-fasteners-plates/
- **Quote URL:** https://tensilebase.com/quote.html?product=carbon-carbon-cfc-composite-fasteners-plates
- **Category:** Graphite Components
- **Chemical Formula:** C/C (2D / 2.5D Carbon-Fiber Reinforced Carbon) (Elements: C)
- **CAS Registry Number:** 7440-44-0
- **Synonyms:** CFC vacuum furnace hearth plate, carbon-carbon composite bolt & nut, hot-press die reinforcement sleeve
- **Purity / Grades:** CVI / Pitch-Densified 2D & 2.5D Carbon-Carbon Composite (<200 ppm or <20 ppm Purified)
- **Typical Dimensions:** Plates 1–30 mm, U/L-Profiles, Charging Grids, & M6–M24 C/C Bolts/Nuts/Rods
- **Configurations:** Waterjet/CNC cut plates, hot-press liner sleeves, & matched threaded fasteners
- **Typical Lead Time:** 10–18 business days
- **Documentation Included:** Manufacturer Lot COA (bulk density, flexural strength, ash content) and dimensional verification.

### Technical Overview
While monolithic graphite is brittle under tensile or impact loading, Carbon-Carbon (C/C or CFC) composite reinforces a pyrolytic/pitch carbon matrix with woven PAN carbon fiber plies—achieving 3–5× higher flexural and tensile strength (150–300 MPa) at half the thickness and weight of steel or molybdenum.

Unlike metals that soften above 1,200 °C, C/C composite actually increases in strength up to 2,200 °C, making it the premier material for thin vacuum-furnace charging trays, hot-zone protective liners, SPS/hot-press outer hoop sleeves, and high-torque M6–M24 bolts and nuts.

### Nominal Properties
- **Material Architecture:** 2D Woven / 2.5D Needled PAN Carbon Fiber + CVI/Pitch Carbon Matrix
- **Bulk Density:** 1.45 – 1.75 g/cm³
- **Tensile / Flexural Strength:** 150 – 280 MPa (4–5× stronger than monolithic graphite)
- **Thermal Expansion (In-Plane):** 0.5 – 1.5 × 10⁻⁶ /K (Ultra-low warp)
- **Max Vacuum/Inert Temp:** 2,200 – 2,500 °C

### Applications
- Vacuum brazing and heat-treating furnace charging grids, work baskets, and hearth rails
- Thin protective inner hot-zone shield liners over rigid graphite felt (TB-GR-FLT)
- High-tensile outer reinforcement hoop sleeves for graphite hot-pressing and SPS dies
- M6 to M24 C/C threaded studs, hex bolts, nuts, and washers

### Buyer Specification Guide
Specify plate thickness × length × width, fastener thread size (e.g., M8/M10/M12/M16 bolt + nut), or attach a CAD drawing for custom slotted charging trays.

### Technical FAQs
- **Q: Why replace molybdenum or steel furnace trays with C/C composite grids?**
  A: C/C grids weigh 75% less than metal trays, never warp or sag during oil/gas quenching, and absorb far less thermal energy—cutting furnace cycle times and power consumption.
- **Q: Do C/C composite bolts seize or weld at 2,000 °C?**
  A: No. Unlike metallic fasteners that diffusion-bond together, C/C bolts and nuts have natural lubricity and can be unscrewed cleanly after 2,000 °C runs.
- **Q: Can C/C plates be coated with pyrolytic carbon or SiC?**
  A: Yes. Surface sealing with CVD pyrolytic carbon or SiC prevents fiber shedding in clean semiconductor furnaces.

---
## High-Purity Graphite Crucibles, Stopper Rods & Continuous Casting Dies (`TB-GR-CRU`)
- **URL:** https://tensilebase.com/products/graphite-crucibles-induction-melting-casting/
- **Quote URL:** https://tensilebase.com/quote.html?product=graphite-crucibles-induction-melting-casting
- **Category:** Graphite Components
- **Chemical Formula:** C (99.9%–99.999%) (Elements: C)
- **CAS Registry Number:** 7440-44-0
- **Synonyms:** Precious metal gold/silver/copper graphite melting crucible, vacuum induction graphite liner
- **Purity / Grades:** Isostatic Fine-Grain (<20–50 ppm Ash) & Halogen-Purified (<5 ppm Ash) Grades
- **Typical Dimensions:** Crucibles 5 mL to 50 L; Induction Susceptor Crucibles; Continuous Casting Dies
- **Configurations:** Custom spouted melting crucibles, threaded-lid capsules, & multi-strand casting dies
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (bulk density, ash ppm content, Shore hardness) and dimensional inspection.

### Technical Overview
Machined from dense, fine-grain isostatic graphite (1.82–1.88 g/cm³) with zero clay or silica binders, our high-purity graphite crucibles and continuous casting dies are non-wetting toward molten gold, silver, copper, aluminum, brass, tin, and glass/fluoride melts.

High thermal conductivity (110–140 W/m·K) and natural RF/MF electromagnetic coupling allow direct induction heating or rapid resistance heating up to 2,500 °C in vacuum or inert gas.

### Nominal Properties
- **Carbon Purity:** 99.95% (<50 ppm ash) or 99.999% (<5 ppm Halogen-Purified)
- **Bulk Density:** 1.80 – 1.88 g/cm³ (Isostatic Grade)
- **Thermal Conductivity:** 110 – 140 W/m·K
- **Open Porosity:** 8% – 10% (Optional PyC or glassy impregnation)
- **Max Temp (Inert/Vacuum):** 2,500 – 2,800 °C

### Applications
- Vacuum and induction melting of 999.9 gold, silver, platinum-group alloys, and OFHC copper
- Horizontal and vertical upward continuous casting dies for copper rod, strip, and silver wire
- Insert liners inside alumina or quartz induction coils and LECO oxygen/nitrogen analysis crucibles
- Directional solidification and Bridgman crystal growth of fluorides and chalcogenides

### Buyer Specification Guide
Specify crucible OD × ID × height (or mL/kg metal capacity), flat vs. hemispherical bottom, pouring spout or lid requirements, and alloy/material being melted.

### Technical FAQs
- **Q: Which metals should NOT be melted directly in bare graphite crucibles?**
  A: Strong carbide-forming metals (Ti, Zr, Cr, Ni, Fe, Si, Pt at very high temp) dissolve carbon; for those, use our Al2O3 (TB-AL2O3-CR), ZrO2 (TB-ZRO2-CR), MgO (TB-MGO-CR), or BN (TB-HBN-MC) crucibles.
- **Q: How can I extend the life of a graphite crucible used in air?**
  A: Apply a boron nitride or anti-oxidation glaze and minimize hold time between 500–900 °C, or purge the crucible mouth with argon/nitrogen cover gas.
- **Q: Can you machine multi-cavity precious metal ingot molds and stopper rods?**
  A: Yes. Both cylindrical/conical crucibles and multi-cavity bar/coin molds are CNC-machined to your exact dimensions.

---
## High-Purity Flexible Graphite Foil, Hot-Press Release Sheets & Vacuum Gaskets (`TB-GR-FL`)
- **URL:** https://tensilebase.com/products/expanded-flexible-graphite-foil-gaskets/
- **Quote URL:** https://tensilebase.com/quote.html?product=expanded-flexible-graphite-foil-gaskets
- **Category:** Graphite Components
- **Chemical Formula:** C (99.5% – 99.95% Exfoliated Graphite) (Elements: C)
- **CAS Registry Number:** 7440-44-0
- **Synonyms:** Grafoil-equivalent SPS punch liner paper, flexible graphite thermal interface & high-temp gasket sheet
- **Purity / Grades:** 99.5% Industrial, 99.85% Nuclear (<50 ppm S/Cl), & 99.95% Semiconductor Grade
- **Typical Dimensions:** Thickness 0.05 mm, 0.13 mm, 0.25 mm, 0.38 mm, 0.50 mm, 0.80 mm, 1.0 mm, 1.5 mm, 2.0 mm, 3.0 mm
- **Configurations:** Rolls (Width 300–1,000 mm), Flat Sheets, & Die-Cut SPS Liners / Flange Gaskets
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot COA (carbon %, ash %, leachable sulfur/chloride ppm, thickness, and density).

### Technical Overview
Calendared from thermally exfoliated natural flake graphite without any organic binders, resins, or fillers, flexible graphite foil is compressible, resilient, chemically inert, and thermally stable from −240 °C to +3,000 °C in vacuum or inert gas.

In materials research, 0.13–0.25 mm flexible graphite paper is universally wrapped around the inner bore and punch faces of Spark Plasma Sintering (SPS / FAST) and hot-press graphite dies (TB-GR-MLD) to ensure uniform electrical contact, prevent powder reaction with the die wall, and allow effortless sample ejection.

### Nominal Properties
- **Carbon Purity:** 99.5% Standard / 99.85% Nuclear Low-Sulfur / 99.95% Semiconductor
- **Bulk Density:** 1.0 – 1.1 g/cm³ (Up to 1.5–1.8 g/cm³ high-density thermal foil)
- **Standard Thicknesses:** 0.05, 0.10, 0.13, 0.20, 0.25, 0.35, 0.50, 0.80, 1.0, 1.5, 2.0, 3.0 mm
- **Thermal Conductivity:** In-plane 140–300 W/m·K · Through-plane ~5 W/m·K
- **Service Temperature:** −240 °C to +450 °C (Air) / +3,000 °C (Vacuum & Inert Gas)

### Applications
- Sacrificial release liner and electrical contact paper inside SPS and hot-press graphite dies
- High-temperature vacuum furnace flange gaskets and sight-glass seals
- Anisotropic lateral heat-spreading sheets (in-plane κ = 150–400 W/m·K) beneath electronics and crucibles
- Corrosive chemical flange gaskets and fuel-cell bipolar plate seals

### Buyer Specification Guide
Specify foil thickness (e.g., 0.13 mm or 0.25 mm for SPS liners; 1.0–2.0 mm for gaskets), purity tier, roll/sheet dimensions or pre-cut disc/sleeve sizes, and quantity.

### Technical FAQs
- **Q: What thickness of flexible graphite foil is standard for lining SPS dies?**
  A: 0.13 mm (0.005") or 0.20–0.25 mm (0.008"–0.010") is standard for wrapping the inner bore and placing as discs between the powder and punches.
- **Q: What if my sample reacts with carbon during SPS sintering?**
  A: Coat the graphite foil with a thin hexagonal boron nitride (h-BN) spray or place a thin tantalum (TB-TA-SH) or molybdenum (TB-MO-SH) barrier foil disc between the sample and the graphite paper.
- **Q: Can you supply pre-cut discs and cylinder wraps matched to our SPS die ID?**
  A: Yes. Order bulk rolls/sheets or precision die-cut discs and bore wraps sized for Ø 10, 12.7, 15, 20, 25, 30, 40, and 50 mm SPS dies.

---
## Coin-Cell Hardware Kits (CR2032, CR2025, CR2016), Spacers, Wave Springs & Split Test Cells (`TB-BAT-CC`)
- **URL:** https://tensilebase.com/products/coin-cell-cr2032-cr2025-cases-spacers-springs/
- **Quote URL:** https://tensilebase.com/quote.html?product=coin-cell-cr2032-cr2025-cases-spacers-springs
- **Category:** Battery & Milling Labware
- **Chemical Formula:** 316L SS / 304 SS / Al-Clad / Ti (Elements: Fe, Cr, Ni, Mo, Al)
- **CAS Registry Number:** 7439-89-6
- **Synonyms:** CR2032 battery research coin cell cases, 316L stainless steel spacer discs & wave springs, Al-clad high-voltage coin cell
- **Purity / Grades:** Electropolished 316L / 304 Stainless Steel & High-Voltage Al-Clad Positive Cans
- **Typical Dimensions:** CR2032 (Ø20×3.2 mm), CR2025 (Ø20×2.5 mm), CR2016 (Ø20×1.6 mm) + Ø15.8×0.5/1.0 mm Spacers
- **Configurations:** 100-set or 1,000-set complete kits (Can + Cap w/ PP Gasket + Spacer + Wave Spring); Optical Window Cases
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot COA (316L/304 alloy verification, dimensional tolerance, cleanroom lot seal).

### Technical Overview
Reproducible half-cell and full-cell electrochemical cycling starts with burr-free, corrosion-resistant coin-cell hardware. We supply complete CR2032, CR2025, and CR2016 kits in both standard 304 stainless steel and molybdenum-bearing 316L stainless steel (essential for corrosive LiPF6, LiFSI, and halide electrolytes).

For high-voltage cathodes (>4.3 V vs. Li/Li⁺ such as LNMO, rich-NMC, and LiCoPO4) where stainless steel anodically corrodes, we stock aluminum-clad CR2032 positive cans and TiN-coated cases, plus pre-perforated optical/X-ray in-situ window cases.

### Nominal Properties
- **Cell Formats:** CR2032 (Ø20×3.2 mm), CR2025 (Ø20×2.5 mm), CR2016 (Ø20×1.6 mm), CR2450
- **Metallurgy Options:** 316L SS (Corrosion Resistant), 304 SS, & Al-Clad Positive Cans (for >4.3 V)
- **Spacer Disc Sizes:** Ø 15.5 mm or Ø 15.8 mm × Thickness 0.2, 0.5, 0.8, 1.0 mm
- **Spring & Gasket:** Ø 15.4 × 1.1 mm Wave/Conical Spring + Electrolyte-Proof Polypropylene (PP) Gasket
- **Pack Quantities:** 100 Sets / Pack, 500 Sets, or 1,000 Sets Bulk

### Applications
- Lithium-ion, sodium-ion, potassium-ion, and Li-S / solid-state half-cell and full-cell cycling
- High-voltage (>4.3–5.0 V) cathode testing using Al-clad positive CR2032 cans
- In-situ XRD, Raman, and optical microscopy operando battery cells (Kapton/Be/quartz window coin cases)
- Reusable PEEK/PTFE 2-electrode and 3-electrode Swagelok-type split test cells

### Buyer Specification Guide
Specify coin cell format (CR2032, CR2025, CR2016), metallurgy (316L SS, 304 SS, or Al-clad), spacer thickness (0.5 mm vs. 1.0 mm), and number of sets.

### Technical FAQs
- **Q: Why should I use 316L stainless steel or Al-clad CR2032 cases instead of 304 SS?**
  A: 304 SS corrodes above ~4.2 V in LiPF6 electrolytes, causing parasitic current and falsely low Coulombic efficiency; 316L resists general corrosion up to ~4.35 V, and Al-clad cans passivate cleanly up to 5.0 V.
- **Q: What is included in a complete CR2032 coin-cell kit?**
  A: Each set includes 1 positive case, 1 negative cap with pre-installed polypropylene (PP) sealing gasket, 1 stainless steel spacer disc (Ø15.8×0.5 or 1.0 mm), and 1 wave spring.
- **Q: Can I order cases with pre-punched center holes for in-situ XRD or Raman?**
  A: Yes. Pre-perforated Ø 3–10 mm window CR2032 cases and reusable split cells with quartz/Kapton windows are available.

---
## Battery-Grade Copper Foil (9 µm), Aluminum Foil (15 µm) & Carbon-Coated Current Collectors (`TB-BAT-FL`)
- **URL:** https://tensilebase.com/products/battery-grade-copper-aluminum-carbon-coated-foils/
- **Quote URL:** https://tensilebase.com/quote.html?product=battery-grade-copper-aluminum-carbon-coated-foils
- **Category:** Battery & Milling Labware
- **Chemical Formula:** Cu (≥99.9%) / Al (≥99.6%) / C-Coated Al & Cu (Elements: Cu, Al, C)
- **CAS Registry Number:** 7440-50-8
- **Synonyms:** Lithium battery anode copper current collector foil, carbon-coated aluminum cathode foil, 3D porous Cu/Al foil
- **Purity / Grades:** Electrolytic / Rolled Battery Grade (Cu ≥99.9%, Al 1235/1060 ≥99.6%)
- **Typical Dimensions:** Cu Foil 6, 8, 9, 12, 15, 25 µm; Al Foil 12, 15, 16, 20 µm; Widths 150–300 mm & Pre-Punched Discs
- **Configurations:** Bare Cu/Al rolls, 1 µm conductive carbon-coated (C-Al / C-Cu) rolls, & Ø 12–19 mm pre-punched discs
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot COA (foil purity, thickness, areal density g/m², tensile strength, and surface dyne level).

### Technical Overview
Current-collector surface energy and contact resistance directly govern electrode slurry adhesion, high-rate C-rate capability, and cycle life. We supply anti-tarnish treated electrolytic copper anode foil (8–12 µm), battery-grade aluminum cathode foil (15–20 µm), and 1 µm nano-carbon-coated aluminum (C-Al) and copper (C-Cu) foils.

Conductive carbon primer layers reduce interfacial contact resistance by 40%–70%, prevent binder delamination in aqueous and high-loading LFP/NMC/Si electrodes, and suppress aluminum pitting corrosion.

### Nominal Properties
- **Copper Foil Specs:** ≥ 99.9% Cu · Thickness 6, 8, 9, 12, 15, 25 µm · Width 180–300 mm
- **Aluminum Foil Specs:** ≥ 99.6% Al · Thickness 12, 15, 16, 20, 25 µm · Width 180–300 mm
- **Carbon-Coated C-Al / C-Cu:** 1.0 µm Double- or Single-Side Conductive Carbon Primer (< 20 Ω/sq)
- **3D Perforated / Etched Foil:** Micro-perforated through-hole Al & Cu foils for pre-lithiation & ultra-thick electrodes
- **Pre-Cut Discs & Sheets:** A4 flat sheets, 1–5 kg rolls, & burr-free Ø 12, 14, 15, 16, 18, 19 mm discs

### Applications
- Doctor-blade and slot-die slurry casting of graphite, silicon/C, and hard-carbon anodes (Cu & C-Cu foil)
- Cathode coating of LFP, NMC811, LCO, LNMO, sulfur, and Prussian-blue analogs (Al & C-Al foil)
- Aqueous binder (CMC/SBR, PAA, alginate) and dry-film PTFE electrode processing
- Supercapacitor and hybrid Li-ion capacitor current collectors

### Buyer Specification Guide
Specify foil type (Bare Cu, Bare Al, Carbon-Coated Al, or Carbon-Coated Cu), base foil thickness (µm), roll width × length (or A4 sheets / pre-punched disc diameter), and quantity.

### Technical FAQs
- **Q: When should I use carbon-coated aluminum (C-Al) foil instead of bare Al foil?**
  A: Carbon-coated Al is strongly recommended for poorly conductive cathodes (LFP, LMFP, sulfur), aqueous-processed slurries, and thick high-areal-loading electrodes where bare Al delaminates.
- **Q: Can I order small A4 sheets instead of a full 5 kg roll?**
  A: Yes! We supply both cleanroom-packed A4 flat sheets (20–100 sheets/pack) for lab benchtop coaters and continuous rolls for roll-to-roll pilot lines.
- **Q: Do you offer pre-punched electrode discs?**
  A: Yes. Precision die-cut burr-free discs in Ø 12, 14, 15, 16, and 18 mm are available for immediate coin-cell assembly.

---
## Carbon Fiber Paper, Carbon Cloth & MPL-Coated Gas Diffusion Layers (GDL) (`TB-EC-GDL`)
- **URL:** https://tensilebase.com/products/carbon-paper-cloth-gas-diffusion-layers-gdl/
- **Quote URL:** https://tensilebase.com/quote.html?product=carbon-paper-cloth-gas-diffusion-layers-gdl
- **Category:** Battery & Milling Labware
- **Chemical Formula:** C / PTFE (Graphitized PAN Carbon Fiber) (Elements: C, F)
- **CAS Registry Number:** 7440-44-0
- **Synonyms:** Toray/SGL/Freudenberg-equivalent PEM fuel cell GDL carbon paper, vanadium redox flow battery carbon felt, CO2RR gas diffusion electrode
- **Purity / Grades:** Graphitized >99.5% Carbon (Hydrophilic Untreated, PTFE-Wetproofed, or MPL-Coated)
- **Typical Dimensions:** Thickness 110–420 µm; Sheets 200×200 mm, 300×300 mm, 400×400 mm & Rolls
- **Configurations:** Plain hydrophilic, 5–30 wt% PTFE hydrophobic, or single/double Microporous Layer (MPL)
- **Typical Lead Time:** 5–10 business days
- **Documentation Included:** Manufacturer Lot COA (thickness, areal weight g/m², porosity %, through-plane resistance, and PTFE/MPL wt%).

### Technical Overview
Engineered with controlled 75%–82% open macroporosity, high through-plane electrical/thermal conductivity, and customizable hydrophobicity, our graphitized carbon papers and woven carbon cloths manage simultaneous gas transport, water removal, and electron conduction across electrochemical membrane-electrode assemblies (MEAs).

Choose untreated hydrophilic grades for supercapacitors, microbial fuel cells, and vanadium redox flow batteries, or PTFE-wetproofed + carbon/PTFE Microporous Layer (MPL) coated GDL sheets for H2/O2 PEM fuel cells and gas-fed CO2/O2 electrolyzers.

### Nominal Properties
- **Substrate Types:** Non-Woven Graphitized Carbon Paper (110–370 µm), Woven Carbon Cloth (300–420 µm), & Felt (2–10 mm)
- **Open Porosity:** 75% – 82%
- **Through-Plane Resistivity:** < 5 – 12 mΩ·cm²
- **Surface Treatments:** Untreated Hydrophilic, 5%–30% PTFE Wetproofed, or PTFE + Carbon MPL
- **Standard Sheet Sizes:** 100×100 mm, 200×200 mm, 300×300 mm, 400×400 mm

### Applications
- PEM fuel cell (PEMFC) and anion-exchange membrane fuel cell (AEMFC) cathode/anode GDLs
- Gas-diffusion electrodes (GDEs) for electrochemical CO2 reduction (CO2RR) and H2O2 electrosynthesis
- Vanadium, iron-chromium, and zinc-bromine redox flow battery electrodes (Carbon paper, cloth & 3–10 mm PAN/rayon felt)
- Flexible supercapacitors, Li-O2/Zn-air cathodes, and electrocatalyst dip/spray substrates

### Buyer Specification Guide
Specify substrate type (carbon paper, woven carbon cloth, or thick redox flow felt), thickness (µm or mm), treatment (untreated hydrophilic, PTFE-only, or PTFE + MPL), sheet size, and quantity.

### Technical FAQs
- **Q: Should I choose MPL-coated carbon paper or untreated hydrophilic carbon paper?**
  A: For gas-fed reactions (PEM fuel cells, CO2RR gas-diffusion electrodes, Zn-air), use PTFE + MPL coated carbon paper to prevent electrolyte flooding; for liquid-immersed anodes/supercapacitors, use untreated hydrophilic paper or cloth.
- **Q: Which side of an MPL-coated GDL faces the catalyst layer and membrane?**
  A: The smooth, matte black Microporous Layer (MPL) side always faces inward against the catalyst layer/membrane, while the fibrous carbon-paper backing faces the flow-field plate.
- **Q: Do you also supply thermally activated 3–6 mm graphite felt for Vanadium Flow Batteries?**
  A: Yes. Both thin GDL papers (0.1–0.4 mm) and thick PAN/rayon-based battery felts (2–10 mm) can be quoted.

---
## Planetary Ball Mill Jars & Media (Tungsten Carbide, Agate, Alumina, Si3N4, PTFE & 316L SS) (`TB-MIL-WC`)
- **URL:** https://tensilebase.com/products/tungsten-carbide-alumina-agate-ptfe-milling-jars/
- **Quote URL:** https://tensilebase.com/quote.html?product=tungsten-carbide-alumina-agate-ptfe-milling-jars
- **Category:** Battery & Milling Labware
- **Chemical Formula:** WC-Co / SiO2 (Agate) / Al2O3 / Si3N4 / PTFE / Nylon (Elements: W, C, Co, Si, Al, O, F)
- **CAS Registry Number:** 12070-12-1
- **Synonyms:** Tungsten carbide planetary ball mill jar, natural agate grinding jar, vacuum argon glovebox ball milling jar
- **Purity / Grades:** WC-6%Co, Natural Brazilian Agate (99.9% SiO2), 99.5% Al2O3, Si3N4, Virgin PTFE, & 316L SS
- **Typical Dimensions:** Jars: 50 mL, 100 mL, 250 mL, 500 mL, 1,000 mL + Matching Balls (Ø 1–20 mm)
- **Configurations:** Standard atmospheric lids or O-ring sealed Vacuum / Argon Glovebox Gas-Purge Lids
- **Typical Lead Time:** 7–14 business days
- **Documentation Included:** Manufacturer Lot COA (jar/ball composition, density, hardness) and seal check.

### Technical Overview
Eliminating cross-contamination during mechanochemical synthesis and nano-comminution requires matching the jar and ball material to your sample chemistry. Alongside our YSZ zirconia jars (TB-MIL-ZR), we supply a complete range of planetary ball-mill jars (50 mL, 100 mL, 250 mL, 500 mL, 1,000 mL) and matching grinding media.

Material options include Tungsten Carbide (WC-6%Co, 14.8 g/cm³) for extreme impact energy on hard carbides and mechanical alloying; Natural Brazilian Agate (99.91% SiO2, 2.65 g/cm³) for trace-metal-free analytical grinding; Silicon Nitride (Si3N4, 3.25 g/cm³) for non-oxide toughness; Virgin PTFE & Nylon for soft halide/sulfide solid electrolytes; and Stainless-Steel Armored Vacuum/Argon-Valve Jars for air-free loading inside an inert glovebox.

### Nominal Properties
- **Available Jar Materials:** Tungsten Carbide (WC-Co), Natural Agate, 99.5% Al2O3, Si3N4, YSZ, PTFE, PA6 Nylon, 304/316L SS
- **Material Densities:** WC: 14.8 · YSZ: 6.0 · SS: 7.9 · Al2O3: 3.9 · Si3N4: 3.25 · Agate: 2.65 · PTFE: 2.15 g/cm³
- **Standard Jar Volumes:** 50 mL, 100 mL, 250 mL, 500 mL, 1,000 mL, 2,000 mL
- **Atmosphere Control:** Standard O-Ring Lid or Vacuum/Argon Dual-Valve Glovebox Jacket
- **Matching Ball Diameters:** Ø 1 mm, 2 mm, 3 mm, 5 mm, 8 mm, 10 mm, 15 mm, 20 mm

### Applications
- Mechanochemical synthesis of sulfide (Li6PS5Cl argyrodite) and halide solid-state battery electrolytes (Vacuum/Ar-sealed ZrO2, Si3N4, or PTFE jars)
- High-energy mechanical alloying and hard-metal/ceramic comminution (Tungsten Carbide WC-Co jars)
- Trace-metal-free geological, pharmaceutical, and analytical sample preparation (Natural Agate & Al2O3 jars)
- Wet and dry planetary dispersion of battery slurries, phosphors, and catalyst inks

### Buyer Specification Guide
Specify jar material (WC, Agate, Al2O3, Si3N4, PTFE, or 316L SS), jar volume (50–1,000 mL), standard vs. vacuum/glovebox valve lid, planetary mill model (or max jar OD × height), and ball sizes/weight.

### Technical FAQs
- **Q: Which jar and ball material should I choose for air-sensitive sulfide solid electrolytes (e.g., Li6PS5Cl)?**
  A: Use our YSZ (TB-MIL-ZR) or Si3N4 jars fitted with a stainless-steel vacuum/argon valve jacket and Viton/PTFE O-ring so the jar can be sealed inside an argon glovebox and transferred to the planetary mill without air exposure.
- **Q: What ball-to-powder weight ratio and ball size mix should I order?**
  A: A 10:1 to 20:1 ball-to-powder mass ratio using a bimodal mix (e.g., 70% Ø 10 mm + 30% Ø 3–5 mm balls) maximizes both coarse impact breakage and fine shear grinding.
- **Q: Are these jars compatible with Retsch, Fritsch, Across International, and Tencan planetary mills?**
  A: Yes. Share your planetary mill model or clamping height/diameter range on the RFQ form and we will supply the matching outer profile and adapter pad.