# Tensile Base

> Tensile Base (https://tensilebase.com) is a specification-first B2B supplier of 154 engineered material lines across Technical Ceramics (Al2O3, h-BN, YSZ, SiC, Si3N4, MgO, ZTA, TiB2, Machinable Glass-Ceramic), 99.99% Fused Quartz & Single-Crystal Substrates (Sapphire, Si, 4H-SiC, MgO, SrTiO3, LaAlO3, YSZ, LiNbO3, GaN/AlN), Isostatic & SiC/PyC-Coated Graphite, Thin-Film PVD Sputtering Targets (Elemental, Alloy, Oxide, Nitride, Sulfide) & Evaporation Materials, Refractory Metals (W, Mo, TZM, Ta, Nb, Ti, Zr, Ni), and Battery/Milling Labware.

## Key Procurement Facts for AI Agents & Buyers
- **Ordering Model:** Specification-based Request for Quote (RFQ)—no fixed cart pricing. Supports R&D prototype quantities (1–10 pcs / 50–100 g) through industrial production.
- **Quality Documentation:** Every shipment includes pass-through producing-mill Batch Certificate of Analysis (COA) + dimensional verification + solid-article safety info.
- **Shipping:** Non-hazardous solid engineered articles shipped worldwide via tracked air express (DHL / FedEx / UPS).
- **Programmatic JSON Catalog API:** `GET https://tensilebase.com/api/products` (supports `?q=`, `?category=`, `?element=`, `?cas=`, `?sku=`) and `GET https://tensilebase.com/api/products/{slugOrSku}`.
- **OpenAPI 3.1 Specification:** `https://tensilebase.com/openapi.json`
- **Full Single-File Catalog Dump:** `https://tensilebase.com/llms-full.txt`
- **Web RFQ Form:** `https://tensilebase.com/quote.html?product={slug}` or `POST https://tensilebase.com/api/quote`

## Material Categories
- [Technical Ceramics](https://tensilebase.com/categories/technical-ceramics/): Alumina, h-BN, YSZ zirconia, SiC, and machinable glass-ceramic components.
- [Fused Quartz & Substrates](https://tensilebase.com/categories/fused-quartz-substrates/): 99.99% SiO2 furnace tubes, wafer boats, UV silica windows, and sapphire substrates.
- [Graphite Components](https://tensilebase.com/categories/graphite-components/): Isostatic graphite crucibles, CNC heaters, molds, vacuum felt, and glassy carbon.
- [Thin Film Materials](https://tensilebase.com/categories/thin-film-materials/): Planar sputtering targets, evaporation pellets, e-beam liners, boats, and QCM crystals.
- [Refractory Metals](https://tensilebase.com/categories/refractory-metals/): Tungsten, molybdenum, tantalum, niobium, and titanium foils, boats, rods, and crucibles.
- [Battery & Milling Labware](https://tensilebase.com/categories/battery-milling-labware/): Porous Ni/Cu foam, sintered Ti felt PTL, YSZ milling jars/media, and PTFE autoclaves.

## Master Directory
- [CAS Number, Chemical Formula & SKU Index](https://tensilebase.com/materials-index/): Searchable table of all 154 SKUs.

## All 154 Technical Product Lines
- [Alumina Ceramic Tubes (TB-AL2O3-TU)](https://tensilebase.com/products/alumina-ceramic-tubes/): Formula `Al2O3` | CAS `1344-28-1` | Purity: 99.5% / 99.7% / 99.8% Al2O3 | Size: OD 6–120 mm × ID 4–108 mm — Impervious high-purity sintered alumina furnace and process tubes for tube furnaces, CVD/annealing, and high-temperature thermal systems.
- [Alumina Crucibles & Lids (TB-AL2O3-CR)](https://tensilebase.com/products/alumina-crucibles/): Formula `Al2O3` | CAS `1344-28-1` | Purity: 99.5% / 99.8% Al2O3 | Size: 2 mL to 2,000 mL capacities — High-purity cylindrical, conical, and rectangular alumina crucibles and matching lids for high-temperature melting, calcination, and gravimetric analysis.
- [Thermocouple Protection Tubes (TB-AL2O3-TC)](https://tensilebase.com/products/ceramic-thermocouple-tubes/): Formula `Al2O3` | CAS `1344-28-1` | Purity: 99.5% / 99.7% Al2O3 (C799) | Size: OD 1.6–32 mm × Lengths up to 1,500 mm — Impervious C799 closed-end protection sheaths and multi-bore insulator rods safeguarding Type R, S, B, and K thermocouples in harsh thermal environments.
- [Alumina Combustion Boats (TB-AL2O3-BT)](https://tensilebase.com/products/alumina-combustion-boats/): Formula `Al2O3` | CAS `1344-28-1` | Purity: 99.5% / 99.8% Al2O3 | Size: Lengths 30–250 mm × Widths 8–60 mm — High-purity open and lidded alumina sample boats sized to slide cleanly inside laboratory quartz and ceramic tube furnaces.
- [Alumina Ceramic Rods (TB-AL2O3-RD)](https://tensilebase.com/products/alumina-ceramic-rods/): Formula `Al2O3` | CAS `1344-28-1` | Purity: 99.0% / 99.5% / 99.8% Al2O3 | Size: Ø 1.0–60 mm × Lengths up to 1,500 mm — High-stiffness solid sintered alumina rods and centerless-ground shafts for kiln supports, vacuum fixtures, metrological guides, and electrical standoffs.
- [Alumina Ceramic Plates (TB-AL2O3-PL)](https://tensilebase.com/products/alumina-ceramic-plates/): Formula `Al2O3` | CAS `1344-28-1` | Purity: 96% / 99.5% / 99.6% Al2O3 | Size: Thickness 0.25–40 mm; up to 400 × 400 mm — Thin tape-cast electronic substrates (96% / 99.6%) and thick precision-ground alumina setter and wear plates with optional laser cutting or CNC machining.
- [Ceramic Insulators (TB-CER-INS)](https://tensilebase.com/products/ceramic-insulators/): Formula `Al2O3 / ZrO2 / MgSiO3` | CAS `1344-28-1` | Purity: 95%–99.8% Al2O3, YSZ, Steatite, Cordierite | Size: Custom CNC / green-machined / dry-pressed to drawing — Custom-machined electrical, RF, vacuum, and thermal ceramic bushings, flanged washers, standoffs, and heater bobbins built to your engineering drawing.
- [Hexagonal Boron Nitride (h-BN) Ceramics (TB-HBN-MC)](https://tensilebase.com/products/boron-nitride-ceramics/): Formula `BN` | CAS `10043-11-5` | Purity: 99% Pure BN / Binderless PBN /BN-ZrO2-SiC Composites | Size: Crucibles, rods Ø 6–150 mm, plates, & CNC parts — Hot-pressed hexagonal boron nitride (h-BN) crucibles, rods, plates, and precision CNC components combining extreme thermal shock resistance, molten-metal non-wetting, and electrical insulation.
- [Yttria-Stabilized Zirconia (YSZ) Ceramics (TB-ZRO2-CR)](https://tensilebase.com/products/zirconia-ceramic-crucibles-tubes/): Formula `ZrO2 · Y2O3` | CAS `1314-23-4` | Purity: 3Y-TZP (94.7% ZrO2) & 8Y-FSZ Refractory Grades | Size: Crucibles 5–1,000 mL, tubes, setter plates, CNC rings — Transformation-toughened 3Y-TZP structural zirconia parts and ultra-refractory YSZ/Mg-PSZ crucibles, setter plates, and tubes rated up to 2,100 °C.
- [Silicon Carbide (SiC) & Silicon Nitride (Si3N4) Parts (TB-SIC-CMP)](https://tensilebase.com/products/silicon-carbide-nitride-ceramics/): Formula `SiC / Si3N4` | CAS `409-21-2` | Purity: SSiC (≥98.5% Direct-Sintered SiC) & GPSN/HIP Si3N4 | Size: Plates, tubes, burner nozzles, seal rings, balls, & CNC parts — Extreme-hardness sintered silicon carbide (SSiC) and thermal-shock-proof silicon nitride (Si3N4) wear components, kiln furniture, seal rings, and molten-metal hardware.
- [Machinable Mica Glass-Ceramic Stock & Parts (TB-MGC-STK)](https://tensilebase.com/products/machinable-glass-ceramic/): Formula `KMg3(AlSi3O10)F2 · Glass` | CAS `65997-17-3` | Purity: Zero-Porosity Fluorphlogopite Mica Glass-Ceramic | Size: Rods Ø 5–150 mm; Sheets/Plates 2–50 mm thick — Zero-porosity fluorphlogopite mica glass-ceramic rods, plates, and finished CNC parts that machine with standard metalworking tools with zero post-firing shrinkage.
- [High-Purity Fused Quartz Furnace Tubes (TB-SIO2-TU)](https://tensilebase.com/products/fused-quartz-tubes/): Formula `SiO2` | CAS `60676-86-0` | Purity: ≥99.99% SiO2 (4N Semiconductor Grade, <20 ppm total metals) | Size: OD 6–300 mm × Wall 1.5–8 mm × Length up to 2,000 mm — Optically clear 99.99% (4N) fused quartz process tubes for CVD graphene/2D growth, semiconductor diffusion, photochemistry, and rapid-quench tube furnaces up to 1,150 °C.
- [Fused Quartz Sample Boats & Wafer Carriers (TB-SIO2-BT)](https://tensilebase.com/products/quartz-sample-boats/): Formula `SiO2` | CAS `60676-86-0` | Purity: ≥99.99% SiO2 Semiconductor-Grade Quartz | Size: Boats 30–300 mm; Slotted carriers for 10×10 mm chips up to 8-inch wafers — Ultra-clean 99.99% fused quartz combustion boats, lidded CVD precursor sleds, and precision-slotted wafer carriers for contamination-free thermal processing.
- [Clear Fused Quartz Crucibles & Evaporating Dishes (TB-SIO2-CR)](https://tensilebase.com/products/quartz-crucibles-dishes/): Formula `SiO2` | CAS `60676-86-0` | Purity: ≥99.99% SiO2 Clear Fused Quartz | Size: 10 mL to 1,000 mL crucibles, beakers, & flat dishes — Flame-polished 99.99% clear fused quartz crucibles, lids, and evaporating dishes for ultra-trace acid digestion, phosphor firing, and thermal shock cycling.
- [UV Fused Silica & Optical Quartz Windows (TB-SIO2-WN)](https://tensilebase.com/products/optical-quartz-windows/): Formula `SiO2` | CAS `60676-86-0` | Purity: JGS1 (Deep-UV 185–2,100 nm) / JGS2 (UV-VIS) / JGS3 (IR Low-OH) | Size: Ø 5–200 mm or Square 5×5 to 150×150 mm × Thickness 0.2–20 mm — Precision double-side optically polished UV synthetic fused silica (JGS1), optical quartz (JGS2), and full-spectrum IR fused silica (JGS3) windows and wafer substrates.
- [Single-Crystal Sapphire Windows & Substrates (TB-SAP-SB)](https://tensilebase.com/products/sapphire-windows-substrates/): Formula `α-Al2O3 (Single Crystal)` | CAS `1344-28-1` | Purity: ≥99.995% Single-Crystal Al2O3 (4N5–5N Kyropoulos/EFG) | Size: Chips 5×5, 10×10 mm; Windows Ø 5–100 mm; Wafers 2", 4", 6" — Epi-ready single-crystal sapphire substrates (C-, R-, A-, M-plane) and Mohs-9 optical sapphire pressure/IR windows from 180 nm UV to 5.0 µm mid-IR.
- [Graphite Crucibles (TB-GR-CR)](https://tensilebase.com/products/graphite-crucibles/): Formula `C` | CAS `7782-42-5` | Purity: 99.9% (Ash <500 ppm) to 99.995% Purified (<20–50 ppm Ash) | Size: 5 mL lab cups to 50 kg induction melting crucibles — Precision CNC-turned fine-grain isostatic graphite crucibles with low ash content (<20–500 ppm) for non-ferrous, precious metal, alloy, and crystal-growth melting.
- [Custom Graphite Components (TB-GR-CNC)](https://tensilebase.com/products/custom-graphite-parts/): Formula `C` | CAS `7782-42-5` | Purity: Isostatic Grades (1.80–1.92 g/cm³); Purified <5–50 ppm Ash; SiC-Coated | Size: 5-axis CNC machined from Ø 5 mm pins up to 800 mm furnace rings — Precision CNC-machined isostatic graphite vacuum-furnace heaters, susceptors, brazing fixtures, wafer carriers, and graphite nuts/bolts made to customer CAD drawings.
- [Graphite Plates & Blocks (TB-GR-PL)](https://tensilebase.com/products/graphite-plates/): Formula `C` | CAS `7782-42-5` | Purity: Molded Fine-Grain & Isostatic High-Density (99.9%–99.99% C) | Size: Plates 1–100 mm thick; Blocks & Rods cut and surface-ground to size — Precision ground fine-grain and isostatic graphite sheets, setter plates, EDM blocks, rods, and impermeable resin-impregnated bipolar plates.
- [Graphite Ingot Casting & Hot-Press Sintering Molds (TB-GR-MLD)](https://tensilebase.com/products/graphite-casting-sintering-molds/): Formula `C` | CAS `7782-42-5` | Purity: High-Strength High-Density Isostatic Graphite (1.85–1.92 g/cm³) | Size: Ingot molds, continuous-casting dies, & SPS / Hot-Press die-punch sets — High-compressive-strength fine-grain graphite Spark Plasma Sintering (SPS) die/punch sets, hot-press sleeves, continuous casting dies, and polished ingot molds.
- [Rigid & Soft Graphite Vacuum Furnace Insulation Felt (TB-GR-FLT)](https://tensilebase.com/products/graphite-thermal-insulation-felt/): Formula `C` | CAS `7782-42-5` | Purity: ≥99.0%–99.9% Graphitized PAN / Rayon Carbon (<100–500 ppm Ash) | Size: Soft rolls/mats 3–20 mm thick; Rigid boards/cylinders 10–100 mm thick — High-purity graphitized soft felt rolls, CNC-machined rigid graphite insulation cylinders/boards, and activated battery electrode felts for vacuum furnaces and energy storage.
- [Pyrolytic Graphite & Glassy (Vitreous) Carbon (TB-PG-GC)](https://tensilebase.com/products/pyrolytic-glassy-carbon/): Formula `C` | CAS `7440-44-0` | Purity: ≥99.999% (5N CVD Pyrolytic Graphite & Polymeric Glassy Carbon) | Size: PG plates 0.5–12 mm; Glassy carbon rods, plates, wafers, & crucibles — Ultra-pure 5N CVD pyrolytic graphite (anisotropic thermal/diamagnetic plates) and mirror-polished gas-impermeable glassy (vitreous) carbon electrodes, wafers, and crucibles.
- [Metal Sputtering Targets (TB-PVD-MT)](https://tensilebase.com/products/sputtering-targets/): Formula `Ti / Cr / Al / Cu / Ni / W / Mo / Ta` | CAS `7440-32-6` | Purity: 3N5 (99.95%) / 4N (99.99%) / 4N5 / 5N (99.999%) | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 1–12.7 mm; Rectangular plates — Vacuum-melted and thermomechanically forged pure metal and custom alloy planar sputtering targets (3N5–5N) sized for research and production magnetron cathodes.
- [Oxide & Nitride Ceramic Sputtering Targets (TB-PVD-OX)](https://tensilebase.com/products/ceramic-oxide-sputtering-targets/): Formula `ITO / ZnO / Al2O3 / SiO2 / TiO2 / AlN / SiC` | CAS `50926-11-9` | Purity: 99.9% (3N) / 99.99% (4N) / 99.995% (4N5) | Size: Ø 1", 2", 3", 4", 6" × Thickness 2–6 mm (+ Cu Backing Plate) — High-density hot-pressed and HIP-consolidated oxide, nitride, carbide, and sulfide ceramic sputtering targets (ITO, AZO, ZnO, Al2O3, SiO2, TiO2, BaTiO3) indium-bonded for arc-free RF/pulsed-DC PVD.
- [Evaporation Materials (TB-PVD-EV)](https://tensilebase.com/products/evaporation-materials/): Formula `Al / Cu / Ti / Cr / Ni / Ge / SiO2 / MgF2 / TiO2` | CAS `7429-90-5` | Purity: 4N (99.99%) / 4N5 / 5N (99.999%) Vacuum-Degassed | Size: 1–3 mm & 3–6 mm granules/shots, Ø 3×3 or 6×6 mm pellets, starter sources — Vacuum-degassed 4N–5N metal evaporation slugs/shots and optical dielectric granules (SiO2, Ti3O5, MgF2, Al2O3) engineered for spit-free e-beam and thermal PVD.
- [E-Beam Evaporation Crucible Pocket Liners (TB-PVD-LN)](https://tensilebase.com/products/ebeam-crucible-liners/): Formula `Cu / C (Graphite & Vitreous) / Mo / W / Al2O3 / BN` | CAS `7440-50-8` | Purity: OFHC Cu (99.99%), Purified Graphite/Vitreous C (<20 ppm), 99.95% Mo/W | Size: 2 cc, 4 cc, 7 cc, 8 cc, 15 cc, 25 cc, 30 cc, 40 cc, & 100 cc — Precision-tapered e-beam gun hearth liners in OFHC copper, purified & impermeable graphite, vitreous carbon, molybdenum, tungsten, alumina, and h-BN.
- [Tungsten, Molybdenum & Tantalum Evaporation Boats (TB-PVD-BT)](https://tensilebase.com/products/thermal-evaporation-boats/): Formula `W / Mo / Ta` | CAS `7440-33-7` | Purity: ≥99.95% W, Mo, & Ta Vacuum-Grade Refractory Sheet/Wire | Size: Lengths 50–150 mm × Thickness 0.005"–0.020" (0.127–0.50 mm); Wire baskets — 99.95% pure tungsten, molybdenum, and tantalum resistive thermal evaporation boats, baffled box sources, and stranded tungsten wire baskets/coils.
- [QCM Thin-Film Deposition Monitor Crystals (TB-PVD-QCM)](https://tensilebase.com/products/qcm-rate-monitor-crystals/): Formula `α-SiO2 + Au / Ag-Al Alloy Electrodes` | CAS `14808-60-7` | Purity: AT-Cut Piezoelectric Quartz (6.0 MHz & 5.0 MHz Fundamental) | Size: Ø 13.97 mm (0.550") Plano-Convex Standard Sensor Discs — Precision 6.0 MHz and 5.0 MHz AT-cut plano-convex quartz crystal microbalance (QCM) thickness monitor sensors with gold or stress-relieving alloy electrodes in cleanroom dispenser packs.
- [Pure Tungsten Crucibles, Rods, Sheets & Furnace Hardware (TB-W-CMP)](https://tensilebase.com/products/tungsten-crucibles-rods-sheets/): Formula `W` | CAS `7440-33-7` | Purity: ≥99.95% W (3N5) & ≥99.99% W (4N); W-La2O3 / W-Re Alloys | Size: Rods Ø 0.5–80 mm, Foil/Sheet 0.05–15 mm, Sintered/Forged Crucibles — Ultra-high-melting-point (3,422 °C) 99.95%+ pure tungsten crucibles, centerless-ground rods, rolled sheets, wire, and hot-zone elements for extreme vacuum thermal systems.
- [Molybdenum Sintering Boats, Plates, Rods & Heat Shields (TB-MO-CMP)](https://tensilebase.com/products/molybdenum-boats-plates-shields/): Formula `Mo` | CAS `7439-98-7` | Purity: ≥99.95% Pure Mo (ASTM B386/B387) & TZM / Mo-La Alloys | Size: Folded/riveted boats, foils 0.025–0.5 mm, plates 1–30 mm, rods, fasteners — 99.95% pure molybdenum, lanthanated Mo-La, and TZM alloy sintering boats, rolled sheets, rods, crucibles, fasteners, and carbon-free vacuum furnace heat shields.
- [Tantalum & Niobium Foils, Sheets, Rods & Crucibles (TB-TA-NB)](https://tensilebase.com/products/tantalum-niobium-foils-crucibles/): Formula `Ta / Nb` | CAS `7440-25-7` | Purity: ≥99.95% (3N5) & ≥99.99% (4N) Metallurgical & Capacitor/E-Beam Grades | Size: Foils 0.01–0.5 mm, Plates 1–12 mm, Seamless Tubes, Rods, Deep-Drawn Crucibles — Ductile 99.95%–99.99% electron-beam melted tantalum and niobium foils, plates, rods, tubes, and deep-drawn crucibles combining glass-like acid immunity with 3,017 °C refractory performance.
- [High-Purity & Grade 1/2 Titanium Foils, Plates & Mesh (TB-TI-GR)](https://tensilebase.com/products/titanium-foils-plates-mesh/): Formula `Ti` | CAS `7440-32-6` | Purity: Grade 1 / Grade 2 CP Ti, Grade 5 (Ti-6Al-4V), & 99.99% (4N) High-Purity Ti | Size: Micron foils 0.01–0.5 mm, Plates 1–50 mm, Woven/Expanded Mesh, Rods, Fasteners — Commercially pure (Grade 1/2), Ti-6Al-4V (Grade 5), and 99.99% high-purity titanium foils, plates, rods, woven/expanded mesh, and MMO-coated electrochemical anodes.
- [Porous Nickel & Copper Metal Foam Current Collectors (TB-BAT-FM)](https://tensilebase.com/products/porous-nickel-copper-metal-foam/): Formula `Ni / Cu / Fe-Ni / Ni-Cr` | CAS `7440-02-0` | Purity: ≥99.8% Ni & ≥99.9% Cu Open-Cell 3D Reticulated Metal Foams | Size: Thickness 0.3–10 mm; Sheets 100×100, 200×300 mm, Continuous Rolls, Punched Discs — High-porosity (95%–98%) 3D reticulated open-cell nickel, copper, and Fe-Ni metal foams in lab sheets, rolls, and pre-punched coin-cell discs for battery, supercapacitor, and electrocatalysis R&D.
- [Sintered Titanium Fiber Felt & Porous Transport Layers (TB-EC-TIF)](https://tensilebase.com/products/sintered-titanium-fiber-felt/): Formula `Ti (Optional Pt / IrO2 Coating)` | CAS `7440-32-6` | Purity: ≥99.7% Vacuum-Sintered Pure Titanium Microfibers | Size: Thickness 0.20, 0.25, 0.30, 0.40, 0.50, 0.80, 1.0 mm; Porosity 50%–78% — Vacuum-sintered pure titanium microfiber felt (0.2–1.0 mm) and platinized Ti porous transport layers (PTLs) engineered for PEM water electrolyzers, regenerative fuel cells, and corrosive filtration.
- [Yttria-Stabilized Zirconia Grinding Media & Mill Jars (TB-MIL-ZR)](https://tensilebase.com/products/zirconia-grinding-media-mill-jars/): Formula `ZrO2 · Y2O3 (95% 3Y-TZP)` | CAS `1314-23-4` | Purity: 94.7%–95% ZrO2 + 5.2 wt% Y2O3 (3 mol% YSZ Ultra-Low-Wear Grade) | Size: Beads/Balls Ø 0.1 mm to 30 mm; Planetary Jars 50 mL to 1,000 mL — High-density (6.0 g/cm³), mirror-polished 95% yttria-stabilized zirconia (3Y-TZP) grinding balls/beads and planetary ball-mill jars for ultra-low-wear, iron-free sub-micron milling.
- [PTFE & PPL Hydrothermal Synthesis Autoclave Reactors (TB-LAB-HYD)](https://tensilebase.com/products/ptfe-hydrothermal-autoclave-reactors/): Formula `PTFE / PPL + 316L Stainless Steel` | CAS `9002-84-0` | Purity: Virgin Trace-Metal-Clean PTFE (≤220 °C) & PPL Para-Polyphenylene (≤260–280 °C) | Size: 10, 25, 50, 100, 150, 200, 250, & 500 mL Chamber Volumes — 316L stainless-steel hydrothermal and solvothermal synthesis autoclave reactors with removable virgin PTFE (up to 220 °C) or high-temperature PPL (up to 280 °C) inert liners.
- [Titanium (Ti) Sputtering Targets (TB-PVD-TI)](https://tensilebase.com/products/titanium-sputtering-target/): Formula `Ti` | CAS `7440-32-6` | Purity: 4N (99.99%) / 4N5 (99.995%) / 5N | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity titanium (Ti, CAS 7440-32-6) planar magnetron sputtering targets in 4N (99.99%) / 4N5 (99.995%) / 5N grades for semiconductor, optical, and research PVD.
- [Chromium (Cr) Sputtering Targets (TB-PVD-CR)](https://tensilebase.com/products/chromium-sputtering-target/): Formula `Cr` | CAS `7440-47-3` | Purity: 3N5 (99.95%) / 4N (99.99%) / 4N5 | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity chromium (Cr, CAS 7440-47-3) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 4N5 grades for semiconductor, optical, and research PVD.
- [Aluminum (Al) Sputtering Targets (TB-PVD-AL)](https://tensilebase.com/products/aluminum-sputtering-target/): Formula `Al` | CAS `7429-90-5` | Purity: 4N (99.99%) / 5N (99.999%) / 5N5 | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity aluminum (Al, CAS 7429-90-5) planar magnetron sputtering targets in 4N (99.99%) / 5N (99.999%) / 5N5 grades for semiconductor, optical, and research PVD.
- [Copper (Cu) Sputtering Targets (TB-PVD-CU)](https://tensilebase.com/products/copper-sputtering-target/): Formula `Cu` | CAS `7440-50-8` | Purity: 4N5 (99.995%) / 5N (99.999%) / 6N OFHC | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity copper (Cu, CAS 7440-50-8) planar magnetron sputtering targets in 4N5 (99.995%) / 5N (99.999%) / 6N OFHC grades for semiconductor, optical, and research PVD.
- [Nickel (Ni) Sputtering Targets (TB-PVD-NI)](https://tensilebase.com/products/nickel-sputtering-target/): Formula `Ni` | CAS `7440-02-0` | Purity: 4N (99.99%) / 4N5 (99.995%) / 5N | Size: Ø 1", 2", 3", 4" × 1.0–2.0 mm (thin magnetic pass-through) or 3–6 mm — Vacuum-melted high-purity nickel (Ni, CAS 7440-02-0) planar magnetron sputtering targets in 4N (99.99%) / 4N5 (99.995%) / 5N grades for semiconductor, optical, and research PVD.
- [Tungsten (W) Sputtering Targets (TB-PVD-W)](https://tensilebase.com/products/tungsten-sputtering-target/): Formula `W` | CAS `7440-33-7` | Purity: 3N5 (99.95%) / 4N (99.99%) / 5N | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity tungsten (W, CAS 7440-33-7) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 5N grades for semiconductor, optical, and research PVD.
- [Molybdenum (Mo) Sputtering Targets (TB-PVD-MO)](https://tensilebase.com/products/molybdenum-sputtering-target/): Formula `Mo` | CAS `7439-98-7` | Purity: 3N5 (99.95%) / 4N (99.99%) / 4N5 | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity molybdenum (Mo, CAS 7439-98-7) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 4N5 grades for semiconductor, optical, and research PVD.
- [Tantalum (Ta) Sputtering Targets (TB-PVD-TA)](https://tensilebase.com/products/tantalum-sputtering-target/): Formula `Ta` | CAS `7440-25-7` | Purity: 3N5 (99.95%) / 4N (99.99%) / 4N5 | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity tantalum (Ta, CAS 7440-25-7) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 4N5 grades for semiconductor, optical, and research PVD.
- [Niobium (Nb) Sputtering Targets (TB-PVD-NB)](https://tensilebase.com/products/niobium-sputtering-target/): Formula `Nb` | CAS `7440-03-1` | Purity: 3N5 (99.95%) / 4N (99.99%) / High-RRR 4N5 | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity niobium (Nb, CAS 7440-03-1) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / High-RRR 4N5 grades for semiconductor, optical, and research PVD.
- [Silicon (Si) Sputtering Targets (TB-PVD-SI)](https://tensilebase.com/products/silicon-sputtering-target/): Formula `Si` | CAS `7440-21-3` | Purity: 5N (99.999%) / 6N Intrinsic, B-doped (p-type), or P-doped (n-type) | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity silicon (Si, CAS 7440-21-3) planar magnetron sputtering targets in 5N (99.999%) / 6N Intrinsic, B-doped (p-type), or P-doped (n-type) grades for semiconductor, optical, and research PVD.
- [Germanium (Ge) Sputtering Targets (TB-PVD-GE)](https://tensilebase.com/products/germanium-sputtering-target/): Formula `Ge` | CAS `7440-56-4` | Purity: 5N (99.999%) / 6N (99.9999%) Intrinsic or Ga/Sb-Doped | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity germanium (Ge, CAS 7440-56-4) planar magnetron sputtering targets in 5N (99.999%) / 6N (99.9999%) Intrinsic or Ga/Sb-Doped grades for semiconductor, optical, and research PVD.
- [Vanadium (V) Sputtering Targets (TB-PVD-V)](https://tensilebase.com/products/vanadium-sputtering-target/): Formula `V` | CAS `7440-62-2` | Purity: 3N5 (99.95%) / 4N (99.99%) | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity vanadium (V, CAS 7440-62-2) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) grades for semiconductor, optical, and research PVD.
- [Zirconium (Zr) Sputtering Targets (TB-PVD-ZR)](https://tensilebase.com/products/zirconium-sputtering-target/): Formula `Zr` | CAS `7440-67-7` | Purity: 3N5 (99.95% Grade 702) / 4N Low-Hf (<100 ppm Hf) | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity zirconium (Zr, CAS 7440-67-7) planar magnetron sputtering targets in 3N5 (99.95% Grade 702) / 4N Low-Hf (<100 ppm Hf) grades for semiconductor, optical, and research PVD.
- [Hafnium (Hf) Sputtering Targets (TB-PVD-HF)](https://tensilebase.com/products/hafnium-sputtering-target/): Formula `Hf` | CAS `7440-58-6` | Purity: 3N5 (99.95% excl. Zr) / 4N Low-Zr | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity hafnium (Hf, CAS 7440-58-6) planar magnetron sputtering targets in 3N5 (99.95% excl. Zr) / 4N Low-Zr grades for semiconductor, optical, and research PVD.
- [Cobalt (Co) Sputtering Targets (TB-PVD-CO)](https://tensilebase.com/products/cobalt-sputtering-target/): Formula `Co` | CAS `7440-48-4` | Purity: 3N5 (99.95%) / 4N (99.99%) / 4N5 | Size: Ø 1", 2", 3", 4" × 1.0–2.0 mm (thin magnetic pass-through) or 3–6 mm — Vacuum-melted high-purity cobalt (Co, CAS 7440-48-4) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 4N5 grades for semiconductor, optical, and research PVD.
- [Iron (Fe) Sputtering Targets (TB-PVD-FE)](https://tensilebase.com/products/iron-sputtering-target/): Formula `Fe` | CAS `7439-89-6` | Purity: 3N5 (99.95%) / 4N (99.99%) / 4N5 | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity iron (Fe, CAS 7439-89-6) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 4N5 grades for semiconductor, optical, and research PVD.
- [Manganese (Mn) Sputtering Targets (TB-PVD-MN)](https://tensilebase.com/products/manganese-sputtering-target/): Formula `Mn` | CAS `7439-96-5` | Purity: 3N5 (99.95%) / 4N (99.99%) | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity manganese (Mn, CAS 7439-96-5) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) grades for semiconductor, optical, and research PVD.
- [Zinc (Zn) Sputtering Targets (TB-PVD-ZN)](https://tensilebase.com/products/zinc-sputtering-target/): Formula `Zn` | CAS `7440-66-6` | Purity: 4N (99.99%) / 4N5 (99.995%) / 5N | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity zinc (Zn, CAS 7440-66-6) planar magnetron sputtering targets in 4N (99.99%) / 4N5 (99.995%) / 5N grades for semiconductor, optical, and research PVD.
- [Tin (Sn) Sputtering Targets (TB-PVD-SN)](https://tensilebase.com/products/tin-sputtering-target/): Formula `Sn` | CAS `7440-31-5` | Purity: 4N (99.99%) / 4N5 / 5N (99.999%) | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity tin (Sn, CAS 7440-31-5) planar magnetron sputtering targets in 4N (99.99%) / 4N5 / 5N (99.999%) grades for semiconductor, optical, and research PVD.
- [Indium (In) Sputtering Targets (TB-PVD-IN)](https://tensilebase.com/products/indium-sputtering-target/): Formula `In` | CAS `7440-74-6` | Purity: 4N5 (99.995%) / 5N (99.999%) / 6N | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity indium (In, CAS 7440-74-6) planar magnetron sputtering targets in 4N5 (99.995%) / 5N (99.999%) / 6N grades for semiconductor, optical, and research PVD.
- [Bismuth (Bi) Sputtering Targets (TB-PVD-BI)](https://tensilebase.com/products/bismuth-sputtering-target/): Formula `Bi` | CAS `7440-69-9` | Purity: 4N (99.99%) / 4N5 / 5N (99.999%) | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity bismuth (Bi, CAS 7440-69-9) planar magnetron sputtering targets in 4N (99.99%) / 4N5 / 5N (99.999%) grades for semiconductor, optical, and research PVD.
- [Antimony (Sb) Sputtering Targets (TB-PVD-SB)](https://tensilebase.com/products/antimony-sputtering-target/): Formula `Sb` | CAS `7440-36-0` | Purity: 4N (99.99%) / 4N5 / 5N (99.999%) | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity antimony (Sb, CAS 7440-36-0) planar magnetron sputtering targets in 4N (99.99%) / 4N5 / 5N (99.999%) grades for semiconductor, optical, and research PVD.
- [Tellurium (Te) Sputtering Targets (TB-PVD-TE)](https://tensilebase.com/products/tellurium-sputtering-target/): Formula `Te` | CAS `13494-80-9` | Purity: 4N (99.99%) / 4N5 / 5N (99.999%) | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity tellurium (Te, CAS 13494-80-9) planar magnetron sputtering targets in 4N (99.99%) / 4N5 / 5N (99.999%) grades for semiconductor, optical, and research PVD.
- [Yttrium (Y) Sputtering Targets (TB-PVD-Y)](https://tensilebase.com/products/yttrium-sputtering-target/): Formula `Y` | CAS `7440-65-5` | Purity: 3N (99.9%) / 3N5 (99.95% REM) | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity yttrium (Y, CAS 7440-65-5) planar magnetron sputtering targets in 3N (99.9%) / 3N5 (99.95% REM) grades for semiconductor, optical, and research PVD.
- [Scandium (Sc) Sputtering Targets (TB-PVD-SC)](https://tensilebase.com/products/scandium-sputtering-target/): Formula `Sc` | CAS `7440-20-2` | Purity: 3N5 (99.95%) / 4N (99.99% REM) | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity scandium (Sc, CAS 7440-20-2) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99% REM) grades for semiconductor, optical, and research PVD.
- [Rare-Earth Metal (La, Ce, Gd, Nd, Er, Yb) (La / Ce / Gd / Nd / Er / Yb) Sputtering Targets (TB-PVD-RE)](https://tensilebase.com/products/lanthanum-cerium-gadolinium-targets/): Formula `La / Ce / Gd / Nd / Er / Yb` | CAS `7439-91-0` | Purity: 3N (99.9%) / 3N5 (99.95%) / 4N (REM basis) | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity Rare-Earth metal (la, ce, gd, nd, er, yb) (La / Ce / Gd / Nd / Er / Yb, CAS 7439-91-0) planar magnetron sputtering targets in 3N (99.9%) / 3N5 (99.95%) / 4N (REM basis) grades for semiconductor, optical, and research PVD.
- [Silver (Ag) Sputtering Targets (TB-PVD-AG)](https://tensilebase.com/products/silver-sputtering-target/): Formula `Ag` | CAS `7440-22-4` | Purity: 4N (99.99%) / 4N5 (99.995%) / 5N | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity silver (Ag, CAS 7440-22-4) planar magnetron sputtering targets in 4N (99.99%) / 4N5 (99.995%) / 5N grades for semiconductor, optical, and research PVD.
- [Titanium-Tungsten (TiW 10/90) (TiW (10:90 wt% / 30:70 at.%)) Sputtering Targets (TB-PVD-TIW)](https://tensilebase.com/products/titanium-tungsten-tiw-sputtering-target/): Formula `TiW (10:90 wt% / 30:70 at.%)` | CAS `7440-33-7` | Purity: 3N5 (99.95%) / 4N Low-Alkali Semiconductor Grade | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity Titanium-Tungsten (TiW 10/90) (TiW (10:90 wt% / 30:70 at.%), CAS 7440-33-7) planar magnetron sputtering targets in 3N5 (99.95%) / 4N Low-Alkali Semiconductor Grade grades for semiconductor, optical, and research PVD.
- [Nickel-Chromium (NiCr 80/20) (NiCr (80:20 / 60:40 / 50:50 wt%)) Sputtering Targets (TB-PVD-NICR)](https://tensilebase.com/products/nickel-chromium-nicr-sputtering-target/): Formula `NiCr (80:20 / 60:40 / 50:50 wt%)` | CAS `11106-97-1` | Purity: 3N5 (99.95%) / 4N | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity Nickel-Chromium (NiCr 80/20) (NiCr (80:20 / 60:40 / 50:50 wt%), CAS 11106-97-1) planar magnetron sputtering targets in 3N5 (99.95%) / 4N grades for semiconductor, optical, and research PVD.
- [Permalloy (Ni80Fe20 & CoFeB) (Ni80Fe20 / Ni81Fe19 / Co40Fe40B20) Sputtering Targets (TB-PVD-NIFE)](https://tensilebase.com/products/permalloy-nife-sputtering-target/): Formula `Ni80Fe20 / Ni81Fe19 / Co40Fe40B20` | CAS `12168-54-6` | Purity: 3N5 (99.95%) / 4N Vacuum-Induction Melted | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity permalloy (Ni80Fe20 & CoFeB) (Ni80Fe20 / Ni81Fe19 / Co40Fe40B20, CAS 12168-54-6) planar magnetron sputtering targets in 3N5 (99.95%) / 4N Vacuum-Induction Melted grades for semiconductor, optical, and research PVD.
- [Aluminum-Scandium (AlSc Alloy) (Al1-xScx (Sc 5–43 at.%)) Sputtering Targets (TB-PVD-ALSC)](https://tensilebase.com/products/aluminum-scandium-alsc-sputtering-target/): Formula `Al1-xScx (Sc 5–43 at.%)` | CAS `60683-64-9` | Purity: 4N (99.99%) Vacuum-Melted / HIP Intermetallic | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity Aluminum-Scandium (AlSc alloy) (Al1-xScx (Sc 5–43 at.%), CAS 60683-64-9) planar magnetron sputtering targets in 4N (99.99%) Vacuum-Melted / HIP Intermetallic grades for semiconductor, optical, and research PVD.
- [Copper-Gallium & CIGS Alloy (CuGa (70:30 / 75:25) & CuInGaSe2) Sputtering Targets (TB-PVD-CIGS)](https://tensilebase.com/products/copper-indium-gallium-cigs-sputtering-target/): Formula `CuGa (70:30 / 75:25) & CuInGaSe2` | CAS `57606-41-4` | Purity: 4N (99.99%) / 4N5 | Size: Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular — Vacuum-melted high-purity Copper-Gallium & CIGS alloy (CuGa (70:30 / 75:25) & CuInGaSe2, CAS 57606-41-4) planar magnetron sputtering targets in 4N (99.99%) / 4N5 grades for semiconductor, optical, and research PVD.
- [Indium Tin Oxide (In2O3:SnO2 (90:10 wt%)) Sputtering Targets (TB-PVD-ITO)](https://tensilebase.com/products/ito-indium-tin-oxide-sputtering-target/): Formula `In2O3:SnO2 (90:10 wt%)` | CAS `50926-11-9` | Purity: 4N (99.99%) · ≥99.5% Relative Density | Size: Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) — High-density hot-pressed indium tin oxide (In2O3:SnO2 (90:10 wt%), CAS 50926-11-9) ceramic sputtering targets in 4N (99.99%) · ≥99.5% Relative Density purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
- [Aluminum-Doped Zinc Oxide (AZO) (ZnO:Al2O3 (98:2 wt%)) Sputtering Targets (TB-PVD-AZO)](https://tensilebase.com/products/azo-aluminum-doped-zinc-oxide-target/): Formula `ZnO:Al2O3 (98:2 wt%)` | CAS `1314-13-2` | Purity: 4N (99.99%) | Size: Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) — High-density hot-pressed Aluminum-Doped zinc oxide (AZO) (ZnO:Al2O3 (98:2 wt%), CAS 1314-13-2) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
- [Zinc Oxide (ZnO) Sputtering Targets (TB-PVD-ZNO)](https://tensilebase.com/products/zinc-oxide-zno-sputtering-target/): Formula `ZnO` | CAS `1314-13-2` | Purity: 4N (99.99%) / 4N5 / 5N | Size: Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) — High-density hot-pressed zinc oxide (ZnO, CAS 1314-13-2) ceramic sputtering targets in 4N (99.99%) / 4N5 / 5N purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
- [Aluminum Oxide (Alumina) (Al2O3) Sputtering Targets (TB-PVD-ALO)](https://tensilebase.com/products/alumina-al2o3-sputtering-target/): Formula `Al2O3` | CAS `1344-28-1` | Purity: 4N (99.99%) / 4N5 | Size: Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) — High-density hot-pressed aluminum oxide (alumina) (Al2O3, CAS 1344-28-1) ceramic sputtering targets in 4N (99.99%) / 4N5 purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
- [Silicon Dioxide (Fused Quartz) (SiO2) Sputtering Targets (TB-PVD-SIO2)](https://tensilebase.com/products/silicon-dioxide-sio2-sputtering-target/): Formula `SiO2` | CAS `60676-86-0` | Purity: 4N5 (99.995%) / 5N (99.999%) | Size: Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) — High-density hot-pressed silicon dioxide (fused quartz) (SiO2, CAS 60676-86-0) ceramic sputtering targets in 4N5 (99.995%) / 5N (99.999%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
- [Titanium Dioxide (TiO2 / TiO2-x) Sputtering Targets (TB-PVD-TIO2)](https://tensilebase.com/products/titanium-dioxide-tio2-sputtering-target/): Formula `TiO2 / TiO2-x` | CAS `13463-67-7` | Purity: 4N (99.99%) | Size: Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) — High-density hot-pressed titanium dioxide (TiO2 / TiO2-x, CAS 13463-67-7) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
- [Tantalum Pentoxide (Ta2O5) Sputtering Targets (TB-PVD-TA2O5)](https://tensilebase.com/products/tantalum-pentoxide-ta2o5-sputtering-target/): Formula `Ta2O5` | CAS `1314-61-0` | Purity: 4N (99.99%) / 4N5 (99.995%) | Size: Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) — High-density hot-pressed tantalum pentoxide (Ta2O5, CAS 1314-61-0) ceramic sputtering targets in 4N (99.99%) / 4N5 (99.995%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
- [Niobium Pentoxide (Nb2O5) Sputtering Targets (TB-PVD-NB2O5)](https://tensilebase.com/products/niobium-pentoxide-nb2o5-sputtering-target/): Formula `Nb2O5` | CAS `1313-96-8` | Purity: 4N (99.99%) / 4N5 | Size: Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) — High-density hot-pressed niobium pentoxide (Nb2O5, CAS 1313-96-8) ceramic sputtering targets in 4N (99.99%) / 4N5 purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
- [Hafnium Dioxide (Hafnia) (HfO2) Sputtering Targets (TB-PVD-HFO2)](https://tensilebase.com/products/hafnium-dioxide-hfo2-sputtering-target/): Formula `HfO2` | CAS `12055-23-1` | Purity: 4N (99.99% excl. Zr) / Low-Zr 4N | Size: Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) — High-density hot-pressed hafnium dioxide (hafnia) (HfO2, CAS 12055-23-1) ceramic sputtering targets in 4N (99.99% excl. Zr) / Low-Zr 4N purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
- [Zirconium Dioxide & YSZ (ZrO2 / 8 mol% Y2O3-ZrO2) Sputtering Targets (TB-PVD-ZRO2)](https://tensilebase.com/products/zirconia-ysz-sputtering-target/): Formula `ZrO2 / 8 mol% Y2O3-ZrO2` | CAS `1314-23-4` | Purity: 4N (99.99%) | Size: Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) — High-density hot-pressed zirconium dioxide & YSZ (ZrO2 / 8 mol% Y2O3-ZrO2, CAS 1314-23-4) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
- [Tungsten Trioxide (WO3) Sputtering Targets (TB-PVD-WO3)](https://tensilebase.com/products/tungsten-trioxide-wo3-sputtering-target/): Formula `WO3` | CAS `1314-35-8` | Purity: 4N (99.99%) | Size: Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) — High-density hot-pressed tungsten trioxide (WO3, CAS 1314-35-8) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
- [Molybdenum Trioxide (MoO3) Sputtering Targets (TB-PVD-MOO3)](https://tensilebase.com/products/molybdenum-trioxide-moo3-sputtering-target/): Formula `MoO3` | CAS `1313-27-5` | Purity: 4N (99.99%) | Size: Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) — High-density hot-pressed molybdenum trioxide (MoO3, CAS 1313-27-5) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
- [Nickel Oxide (NiO (or Li-doped NiOx)) Sputtering Targets (TB-PVD-NIO)](https://tensilebase.com/products/nickel-oxide-nio-sputtering-target/): Formula `NiO (or Li-doped NiOx)` | CAS `1313-99-1` | Purity: 4N (99.99%) | Size: Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) — High-density hot-pressed nickel oxide (NiO (or Li-doped NiOx), CAS 1313-99-1) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
- [Tin Dioxide & Antimony/Fluorine Doped (SnO2 / ATO (SnO2:Sb2O3)) Sputtering Targets (TB-PVD-SNO2)](https://tensilebase.com/products/tin-dioxide-sno2-sputtering-target/): Formula `SnO2 / ATO (SnO2:Sb2O3)` | CAS `18282-10-5` | Purity: 4N (99.99%) | Size: Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) — High-density hot-pressed tin dioxide & Antimony/Fluorine doped (SnO2 / ATO (SnO2:Sb2O3), CAS 18282-10-5) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
- [Indium Gallium Zinc Oxide (IGZO) (InGaZnO4 (In:Ga:Zn = 1:1:1 at.%)) Sputtering Targets (TB-PVD-IGZO)](https://tensilebase.com/products/igzo-indium-gallium-zinc-oxide-target/): Formula `InGaZnO4 (In:Ga:Zn = 1:1:1 at.%)` | CAS `Composition dependent; confirm supplier SDS` | Purity: 4N (99.99%) · High-Density Conductive Ceramic | Size: Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) — High-density hot-pressed indium gallium zinc oxide (IGZO) (InGaZnO4 (In:Ga:Zn = 1:1:1 at.%), CAS Composition dependent; confirm supplier SDS) ceramic sputtering targets in 4N (99.99%) · High-Density Conductive Ceramic purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
- [Barium Titanate & Barium Strontium Titanate (BaTiO3 / Ba1-xSrxTiO3 (BST)) Sputtering Targets (TB-PVD-BST)](https://tensilebase.com/products/barium-strontium-titanate-bst-target/): Formula `BaTiO3 / Ba1-xSrxTiO3 (BST)` | CAS `12047-27-7` | Purity: 3N5 (99.95%) / 4N | Size: Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) — High-density hot-pressed barium titanate & barium strontium titanate (BaTiO3 / Ba1-xSrxTiO3 (BST), CAS 12047-27-7) ceramic sputtering targets in 3N5 (99.95%) / 4N purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
- [Lead Zirconate Titanate (PZT 52/48) (Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO)) Sputtering Targets (TB-PVD-PZT)](https://tensilebase.com/products/pzt-lead-zirconate-titanate-target/): Formula `Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO)` | CAS `12626-81-2` | Purity: 3N5 (99.95%) | Size: Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) — High-density hot-pressed lead zirconate titanate (PZT 52/48) (Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO), CAS 12626-81-2) ceramic sputtering targets in 3N5 (99.95%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
- [Solid-State Battery Targets (LiCoO2, Li3PO4, LLZO) (LiCoO2 / Li3PO4 / LiMn2O4 / Li4Ti5O12 / LLZO) Sputtering Targets (TB-PVD-LIB)](https://tensilebase.com/products/lithium-cobalt-phosphate-battery-targets/): Formula `LiCoO2 / Li3PO4 / LiMn2O4 / Li4Ti5O12 / LLZO` | CAS `12190-79-3` | Purity: 3N5 (99.95%) / 4N (with optional 10–15% Li excess) | Size: Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) — High-density hot-pressed Solid-State battery targets (LiCoO2, Li3PO4, LLZO) (LiCoO2 / Li3PO4 / LiMn2O4 / Li4Ti5O12 / LLZO, CAS 12190-79-3) ceramic sputtering targets in 3N5 (99.95%) / 4N (with optional 10–15% Li excess) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
- [Aluminum Nitride (AlN) Sputtering Targets (TB-PVD-ALN)](https://tensilebase.com/products/aluminum-nitride-aln-sputtering-target/): Formula `AlN` | CAS `24304-00-5` | Purity: 3N5 (99.95%) / 4N | Size: Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) — High-density hot-pressed aluminum nitride (AlN, CAS 24304-00-5) ceramic sputtering targets in 3N5 (99.95%) / 4N purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
- [Silicon Nitride (Si3N4) Sputtering Targets (TB-PVD-SI3N4)](https://tensilebase.com/products/silicon-nitride-si3n4-sputtering-target/): Formula `Si3N4` | CAS `12033-89-5` | Purity: 4N (99.99%) | Size: Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) — High-density hot-pressed silicon nitride (Si3N4, CAS 12033-89-5) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
- [Titanium Nitride (TiN) Sputtering Targets (TB-PVD-TIN)](https://tensilebase.com/products/titanium-nitride-tin-sputtering-target/): Formula `TiN` | CAS `25583-20-4` | Purity: 3N5 (99.95%) / 4N | Size: Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) — High-density hot-pressed titanium nitride (TiN, CAS 25583-20-4) ceramic sputtering targets in 3N5 (99.95%) / 4N purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
- [Silicon Carbide (SiC) Sputtering Targets (TB-PVD-SIC)](https://tensilebase.com/products/silicon-carbide-sic-sputtering-target/): Formula `SiC` | CAS `409-21-2` | Purity: 4N (99.99%) / 4N5 | Size: Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) — High-density hot-pressed silicon carbide (SiC, CAS 409-21-2) ceramic sputtering targets in 4N (99.99%) / 4N5 purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
- [2D Transition-Metal Dichalcogenides (MoS2, WS2, MoSe2, WSe2) (MoS2 / WS2 / MoSe2 / WSe2) Sputtering Targets (TB-PVD-TMD)](https://tensilebase.com/products/molybdenum-tungsten-disulfide-mos2-ws2-target/): Formula `MoS2 / WS2 / MoSe2 / WSe2` | CAS `1317-33-5` | Purity: 4N (99.99%) | Size: Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) — High-density hot-pressed 2D Transition-Metal dichalcogenides (MoS2, WS2, MoSe2, WSe2) (MoS2 / WS2 / MoSe2 / WSe2, CAS 1317-33-5) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
- [Zinc Sulfide & Zinc Selenide (ZnS, ZnSe) (ZnS / ZnSe) Sputtering Targets (TB-PVD-ZNS)](https://tensilebase.com/products/cadmium-zinc-sulfide-zns-target/): Formula `ZnS / ZnSe` | CAS `1314-98-3` | Purity: 4N5 (99.995%) / 5N CVD Optical Grade | Size: Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) — High-density hot-pressed zinc sulfide & zinc selenide (ZnS, ZnSe) (ZnS / ZnSe, CAS 1314-98-3) ceramic sputtering targets in 4N5 (99.995%) / 5N CVD Optical Grade purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
- [Aluminum (Al) Evaporation Materials (TB-EV-AL)](https://tensilebase.com/products/aluminum-evaporation-pellets-wire/): Formula `Al` | CAS `7429-90-5` | Purity: 5N (99.999%) / 5N5 | Size: Ø 3×3 mm, Ø 6×6 mm, Ø 6×12 mm slugs; Ø 1–2 mm wire clips — Vacuum-degassed 5N (99.999%) / 5N5 aluminum (Al, CAS 7429-90-5) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
- [Titanium (Ti) Evaporation Materials (TB-EV-TI)](https://tensilebase.com/products/titanium-evaporation-pellets/): Formula `Ti` | CAS `7440-32-6` | Purity: 4N5 (99.995%) / 5N (99.999%) | Size: Ø 3×3 mm & Ø 6×6 mm vacuum-degassed slugs; pre-melted hearth starter cones — Vacuum-degassed 4N5 (99.995%) / 5N (99.999%) titanium (Ti, CAS 7440-32-6) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
- [Chromium (Cr) Evaporation Materials (TB-EV-CR)](https://tensilebase.com/products/chromium-evaporation-granules-rods/): Formula `Cr` | CAS `7440-47-3` | Purity: 4N (99.99%) / 4N5 (99.995%) | Size: 1–3 mm & 2–5 mm degassed chunks/granules; Cr-plated W evaporation rods — Vacuum-degassed 4N (99.99%) / 4N5 (99.995%) chromium (Cr, CAS 7440-47-3) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
- [Copper (Cu) Evaporation Materials (TB-EV-CU)](https://tensilebase.com/products/copper-evaporation-pellets/): Formula `Cu` | CAS `7440-50-8` | Purity: 5N (99.999%) / 6N OFHC | Size: Ø 3×3 mm & Ø 6×6 mm oxygen-free cylindrical slugs; 2–5 mm shot — Vacuum-degassed 5N (99.999%) / 6N OFHC copper (Cu, CAS 7440-50-8) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
- [Nickel (Ni) Evaporation Materials (TB-EV-NI)](https://tensilebase.com/products/nickel-evaporation-pellets/): Formula `Ni` | CAS `7440-02-0` | Purity: 4N5 (99.995%) / 5N (99.999%) | Size: Ø 3×3 mm & Ø 6×6 mm vacuum-degassed slugs — Vacuum-degassed 4N5 (99.995%) / 5N (99.999%) nickel (Ni, CAS 7440-02-0) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
- [Silver (Ag) Evaporation Materials (TB-EV-AG)](https://tensilebase.com/products/silver-evaporation-pellets/): Formula `Ag` | CAS `7440-22-4` | Purity: 4N5 (99.995%) / 5N (99.999%) | Size: Ø 3×3 mm & Ø 6×6 mm slugs; 1–3 mm vacuum-melted shot — Vacuum-degassed 4N5 (99.995%) / 5N (99.999%) silver (Ag, CAS 7440-22-4) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
- [Germanium (Ge) Evaporation Materials (TB-EV-GE)](https://tensilebase.com/products/germanium-evaporation-granules/): Formula `Ge` | CAS `7440-56-4` | Purity: 5N (99.999%) / 6N Zone-Refined | Size: 1–4 mm & 3–6 mm crystalline pieces; pre-melted hearth slugs — Vacuum-degassed 5N (99.999%) / 6N Zone-Refined germanium (Ge, CAS 7440-56-4) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
- [Silicon Monoxide (SiO) Evaporation Materials (TB-EV-SIO)](https://tensilebase.com/products/silicon-monoxide-sio-evaporation-pieces/): Formula `SiO` | CAS `10097-28-6` | Purity: 4N (99.99%) Vacuum-Sublimed Grade | Size: 2–6 mm dark brown/black vacuum-degassed chunks & granules — Vacuum-degassed 4N (99.99%) Vacuum-Sublimed Grade silicon monoxide (SiO, CAS 10097-28-6) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
- [Silicon Dioxide (Optical Quartz) (SiO2) Evaporation Materials (TB-EV-SIO2)](https://tensilebase.com/products/silicon-dioxide-sio2-evaporation-granules/): Formula `SiO2` | CAS `60676-86-0` | Purity: 4N5 (99.995%) / 5N | Size: 1–3 mm & 2–5 mm crystal-clear fused quartz granules; e-beam starter discs — Vacuum-degassed 4N5 (99.995%) / 5N silicon dioxide (optical quartz) (SiO2, CAS 60676-86-0) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
- [Magnesium Fluoride (MgF2) Evaporation Materials (TB-EV-MGF2)](https://tensilebase.com/products/magnesium-fluoride-mgf2-evaporation-granules/): Formula `MgF2` | CAS `7783-40-6` | Purity: 4N5 (99.995%) Vacuum-Grown Crystal Optical Grade | Size: 1–3 mm & 2–4 mm vacuum-melted crystalline granules — Vacuum-degassed 4N5 (99.995%) Vacuum-Grown Crystal Optical Grade magnesium fluoride (MgF2, CAS 7783-40-6) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
- [Titanium Sub-Oxide (Ti3O5 & TiO2) (Ti3O5 / TiO2) Evaporation Materials (TB-EV-TI3O5)](https://tensilebase.com/products/titanium-oxide-ti3o5-tio2-evaporation-tablets/): Formula `Ti3O5 / TiO2` | CAS `12065-65-5` | Purity: 4N (99.99%) Pre-Reduced Spit-Free Optical Grade | Size: 1–3 mm & 2–4 mm black sintered granules; Ø 10–20 mm vacuum-sintered tablets — Vacuum-degassed 4N (99.99%) Pre-Reduced Spit-Free Optical Grade titanium Sub-Oxide (Ti3O5 & TiO2) (Ti3O5 / TiO2, CAS 12065-65-5) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
- [Tantalum Pentoxide (Ta2O5) Evaporation Materials (TB-EV-TA2O5)](https://tensilebase.com/products/tantalum-pentoxide-ta2o5-evaporation-granules/): Formula `Ta2O5` | CAS `1314-61-0` | Purity: 4N (99.99%) / 4N5 Vacuum-Sintered | Size: 1–3 mm & 2–4 mm sintered granules & tablets (white or pre-reduced dark grade) — Vacuum-degassed 4N (99.99%) / 4N5 Vacuum-Sintered tantalum pentoxide (Ta2O5, CAS 1314-61-0) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
- [Hafnium Dioxide (HfO2) Evaporation Materials (TB-EV-HFO2)](https://tensilebase.com/products/hafnium-oxide-hfo2-evaporation-granules/): Formula `HfO2` | CAS `12055-23-1` | Purity: 4N (99.99% excl. Zr) / 4N5 Low-Zr Laser Grade | Size: 1–3 mm & 1–4 mm high-density sintered granules and tablets — Vacuum-degassed 4N (99.99% excl. Zr) / 4N5 Low-Zr Laser Grade hafnium dioxide (HfO2, CAS 12055-23-1) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
- [Zirconium Dioxide (ZrO2) Evaporation Materials (TB-EV-ZRO2)](https://tensilebase.com/products/zirconium-oxide-zro2-evaporation-tablets/): Formula `ZrO2` | CAS `1314-23-4` | Purity: 4N (99.99%) Optical Grade (Pure or Y2O3/TiO2-Stabilized) | Size: 1–4 mm sintered granules and tablets — Vacuum-degassed 4N (99.99%) Optical Grade (Pure or Y2O3/TiO2-Stabilized) zirconium dioxide (ZrO2, CAS 1314-23-4) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
- [Aluminum Oxide (Sapphire Granules) (Al2O3) Evaporation Materials (TB-EV-AL2O3)](https://tensilebase.com/products/aluminum-oxide-al2o3-evaporation-granules/): Formula `Al2O3` | CAS `1344-28-1` | Purity: 4N5 (99.995%) Crushed Single-Crystal Sapphire & Sintered Tablets | Size: 1–3 mm & 2–5 mm crushed crystal sapphire granules; sintered e-beam tablets — Vacuum-degassed 4N5 (99.995%) Crushed Single-Crystal Sapphire & Sintered Tablets aluminum oxide (sapphire granules) (Al2O3, CAS 1344-28-1) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
- [Indium & Tin (In / Sn) Evaporation Materials (TB-EV-INSN)](https://tensilebase.com/products/indium-tin-evaporation-pellets/): Formula `In / Sn` | CAS `7440-74-6` | Purity: 5N (99.999%) / 6N | Size: Ø 3×3 mm & Ø 6×6 mm high-purity pellets and shot — Vacuum-degassed 5N (99.999%) / 6N indium & tin (In / Sn, CAS 7440-74-6) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
- [Zinc Sulfide & Zinc Selenide (ZnS / ZnSe) Evaporation Materials (TB-EV-ZNS)](https://tensilebase.com/products/zinc-sulfide-zns-znse-evaporation-granules/): Formula `ZnS / ZnSe` | CAS `1314-98-3` | Purity: 4N5 (99.995%) CVD Optical Grade | Size: 1–4 mm CVD crystalline chunks & sintered pellets — Vacuum-degassed 4N5 (99.995%) CVD Optical Grade zinc sulfide & zinc selenide (ZnS / ZnSe, CAS 1314-98-3) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
- [Optical Fluorides (LiF, CaF2, BaF2, YF3, LaF3) (LiF / CaF2 / BaF2 / YF3 / LaF3) Evaporation Materials (TB-EV-FL)](https://tensilebase.com/products/calcium-barium-lithium-fluoride-evaporation/): Formula `LiF / CaF2 / BaF2 / YF3 / LaF3` | CAS `7789-75-5` | Purity: 4N5 (99.995%) Vacuum-Grown Optical Crystal Grade | Size: 1–3 mm & 2–4 mm crystalline granules (ultra-low moisture) — Vacuum-degassed 4N5 (99.995%) Vacuum-Grown Optical Crystal Grade optical fluorides (LiF, CaF2, BaF2, YF3, LaF3) (LiF / CaF2 / BaF2 / YF3 / LaF3, CAS 7789-75-5) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
- [Silicon Wafers & Thermal Oxide (SiO2/Si) Substrates (TB-SUB-SI)](https://tensilebase.com/products/silicon-wafers-thermal-oxide-sio2/): Formula `Si / SiO2-on-Si` | CAS `7440-21-3` | Purity: Prime / Test CZ & FZ Grade (1–100 Ω·cm, Intrinsic >5,000 Ω·cm, or Degenerate 0.001–0.005 Ω·cm) | Size: 10×10 mm, 5×5 mm, 10×5 mm, Ø 1", Ø 2", Ø 3", Ø 4" × 0.5 mm / 1.0 mm — Epi-ready CMP-polished silicon wafers & thermal oxide (SiO2/Si) substrates (Si / SiO2-on-Si, CAS 7440-21-3) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
- [Single-Crystal 4H-SiC & 6H-SiC Wafers & Substrates (TB-SUB-SIC)](https://tensilebase.com/products/silicon-carbide-4h-6h-sic-wafers/): Formula `SiC (4H / 6H)` | CAS `409-21-2` | Purity: PVT Single-Crystal N-Type Conductive & High-Purity Semi-Insulating (HPSI) | Size: 10×10 mm, 5×5 mm, 10×5 mm, Ø 1", Ø 2", Ø 3", Ø 4" × 0.5 mm / 1.0 mm — Epi-ready CMP-polished Single-Crystal 4H-SiC & 6H-SiC wafers & substrates (SiC (4H / 6H), CAS 409-21-2) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
- [Magnesium Oxide (MgO) Single-Crystal Substrates (TB-SUB-MGO)](https://tensilebase.com/products/magnesium-oxide-mgo-substrates/): Formula `MgO` | CAS `1309-48-4` | Purity: Arc-Fusion Single Crystal 4N (99.99%) | Size: 10×10 mm, 5×5 mm, 10×5 mm, Ø 1", Ø 2", Ø 3", Ø 4" × 0.5 mm / 1.0 mm — Epi-ready CMP-polished magnesium oxide (MgO) Single-Crystal substrates (MgO, CAS 1309-48-4) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
- [Strontium Titanate (SrTiO3 & Nb:STO) Single-Crystal Substrates (TB-SUB-STO)](https://tensilebase.com/products/strontium-titanate-srtio3-sto-substrates/): Formula `SrTiO3 / Nb:SrTiO3` | CAS `12060-59-2` | Purity: Verneuil Single Crystal 4N (Undoped Insulating or 0.05–0.7 wt% Nb-Doped Conductive) | Size: 10×10 mm, 5×5 mm, 10×5 mm, Ø 1", Ø 2", Ø 3", Ø 4" × 0.5 mm / 1.0 mm — Epi-ready CMP-polished strontium titanate (SrTiO3 & Nb:STO) Single-Crystal substrates (SrTiO3 / Nb:SrTiO3, CAS 12060-59-2) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
- [Lanthanum Aluminate (LaAlO3) Single-Crystal Substrates (TB-SUB-LAO)](https://tensilebase.com/products/lanthanum-aluminate-laalo3-lao-substrates/): Formula `LaAlO3` | CAS `12003-65-5` | Purity: Czochralski Single Crystal 4N (99.99%) | Size: 10×10 mm, 5×5 mm, 10×5 mm, Ø 1", Ø 2", Ø 3", Ø 4" × 0.5 mm / 1.0 mm — Epi-ready CMP-polished lanthanum aluminate (LaAlO3) Single-Crystal substrates (LaAlO3, CAS 12003-65-5) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
- [Yttria-Stabilized Zirconia (YSZ) Single-Crystal Substrates (TB-SUB-YSZ)](https://tensilebase.com/products/ysz-single-crystal-substrates/): Formula `ZrO2:Y2O3 (8–9.5 mol% Y2O3)` | CAS `1314-23-4` | Purity: Skull-Melted Cubic Single Crystal 4N | Size: 10×10 mm, 5×5 mm, 10×5 mm, Ø 1", Ø 2", Ø 3", Ø 4" × 0.5 mm / 1.0 mm — Epi-ready CMP-polished Yttria-Stabilized zirconia (YSZ) Single-Crystal substrates (ZrO2:Y2O3 (8–9.5 mol% Y2O3), CAS 1314-23-4) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
- [Lithium Niobate (LiNbO3) & Lithium Tantalate (LiTaO3) Wafers (TB-SUB-LNO)](https://tensilebase.com/products/lithium-niobate-linbo3-tantalate-wafers/): Formula `LiNbO3 / LiTaO3` | CAS `12031-63-9` | Purity: Czochralski Optical / SAW / Black-Reduced Grade (Congruent, Stoichiometric, or 5 mol% MgO-Doped) | Size: 10×10 mm, 5×5 mm, 10×5 mm, Ø 1", Ø 2", Ø 3", Ø 4" × 0.5 mm / 1.0 mm — Epi-ready CMP-polished lithium niobate (LiNbO3) & lithium tantalate (LiTaO3) wafers (LiNbO3 / LiTaO3, CAS 12031-63-9) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
- [GaN-on-Sapphire & AlN-on-Sapphire Epi Templates (TB-SUB-GAN)](https://tensilebase.com/products/gallium-nitride-gan-aln-templates/): Formula `GaN / AlN on α-Al2O3` | CAS `25617-97-4` | Purity: MOCVD / HVPE Epitaxial Template (Undoped, Si-Doped N-Type, or Fe-Doped Semi-Insulating) | Size: 10×10 mm, 5×5 mm, 10×5 mm, Ø 1", Ø 2", Ø 3", Ø 4" × 0.5 mm / 1.0 mm — Epi-ready CMP-polished GaN-on-Sapphire & AlN-on-Sapphire epi templates (GaN / AlN on α-Al2O3, CAS 25617-97-4) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
- [Magnesium Aluminate Spinel (MgAl2O4) Substrates & Windows (TB-SUB-SPN)](https://tensilebase.com/products/magnesium-aluminate-spinel-mgal2o4-substrates/): Formula `MgAl2O4` | CAS `1306-44-1` | Purity: Czochralski Single Crystal 4N (99.99%) | Size: 10×10 mm, 5×5 mm, 10×5 mm, Ø 1", Ø 2", Ø 3", Ø 4" × 0.5 mm / 1.0 mm — Epi-ready CMP-polished magnesium aluminate spinel (MgAl2O4) substrates & windows (MgAl2O4, CAS 1306-44-1) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
- [Single-Crystal Quartz (AT-Cut, ST-Cut, X/Y/Z-Cut) Substrates & Windows (TB-SUB-QZC)](https://tensilebase.com/products/crystal-quartz-st-at-z-cut-substrates/): Formula `α-SiO2 (Single Crystal)` | CAS `14808-60-7` | Purity: Hydrothermal Cultured Electronic & Optical Grade Single Crystal | Size: 10×10 mm, 5×5 mm, 10×5 mm, Ø 1", Ø 2", Ø 3", Ø 4" × 0.5 mm / 1.0 mm — Epi-ready CMP-polished Single-Crystal quartz (AT-Cut, ST-Cut, X/Y/Z-Cut) substrates & windows (α-SiO2 (Single Crystal), CAS 14808-60-7) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
- [CaF2, BaF2 & MgF2 UV / Infrared Crystal Windows & Substrates (TB-SUB-CAF2)](https://tensilebase.com/products/calcium-barium-fluoride-ir-uv-windows/): Formula `CaF2 / BaF2 / MgF2` | CAS `7789-75-5` | Purity: Vacuum Bridgman Single-Crystal UV / VUV / IR Excimer Grade | Size: 10×10 mm, 5×5 mm, 10×5 mm, Ø 1", Ø 2", Ø 3", Ø 4" × 0.5 mm / 1.0 mm — Epi-ready CMP-polished CaF2, BaF2 & MgF2 UV / infrared crystal windows & substrates (CaF2 / BaF2 / MgF2, CAS 7789-75-5) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
- [Borosilicate (Borofloat 33), Alkali-Free Display & FTO/ITO Glass Substrates (TB-SUB-GLS)](https://tensilebase.com/products/borosilicate-b270-af32-eagle-xg-glass-wafers/): Formula `SiO2-B2O3-Al2O3 / ITO-Glass / FTO-Glass` | CAS `65997-17-3` | Purity: Schott Borofloat 33, Alkali-Free Display Glass, & Pre-Coated ITO/FTO Research Slides | Size: 10×10 mm, 5×5 mm, 10×5 mm, Ø 1", Ø 2", Ø 3", Ø 4" × 0.5 mm / 1.0 mm — Epi-ready CMP-polished borosilicate (borofloat 33), Alkali-Free display & FTO/ITO glass substrates (SiO2-B2O3-Al2O3 / ITO-Glass / FTO-Glass, CAS 65997-17-3) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
- [High-Purity Tungsten (W) Crucibles & Sapphire Growth Vessels (TB-W-CRU)](https://tensilebase.com/products/tungsten-crucibles-melt-growth-liners/): Formula `W` | CAS `7440-33-7` | Purity: 3N5 (99.95%) / 4N (99.99%) CIP-Sintered, Forged, or Spun | Size: OD 10–400 mm × Wall 1.5–15 mm (Sintered-machined, forged, or seamless spun) — High-purity 3N5 (99.95%) / 4N (99.99%) CIP-Sintered, Forged, or Spun High-Purity tungsten (w) crucibles & sapphire growth vessels (W, CAS 7440-33-7) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
- [Pure & Doped Tungsten (W, WL15, WL20, WC20) Rods & Electrodes (TB-W-ROD)](https://tensilebase.com/products/tungsten-rods-electrodes-lanthanated-ceriated/): Formula `W / W-La2O3 / W-CeO2 / W-Y2O3` | CAS `7440-33-7` | Purity: 99.95% Pure W & Non-Radioactive Lanthanated (1.5–2% La2O3) / Ceriated (2% CeO2) | Size: Ø 0.5 mm to Ø 80 mm × Lengths up to 1,000 mm (Centerless Ground h7/h9) — High-purity 99.95% Pure W & Non-Radioactive Lanthanated (1.5–2% La2O3) / Ceriated (2% CeO2) pure & doped tungsten (w, WL15, WL20, WC20) rods & electrodes (W / W-La2O3 / W-CeO2 / W-Y2O3, CAS 7440-33-7) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
- [High-Purity Tungsten (W) Foil, Sheet, Plate & Evaporation Ribbon (TB-W-SH)](https://tensilebase.com/products/tungsten-foil-sheet-ribbon/): Formula `W` | CAS `7440-33-7` | Purity: 3N5 (99.95%) / 4N (99.99%) Warm/Cold-Rolled & Stress-Relieved | Size: Foil 0.025–0.5 mm; Sheet 0.5–3.0 mm; Plate 3.0–25 mm (Alkali-Cleaned or Ground) — High-purity 3N5 (99.95%) / 4N (99.99%) Warm/Cold-Rolled & Stress-Relieved High-Purity tungsten (w) foil, sheet, plate & evaporation ribbon (W, CAS 7440-33-7) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
- [Pure & Potassium-Doped Non-Sag Tungsten (W / AKS) Wire & Heater Coils (TB-W-WR)](https://tensilebase.com/products/tungsten-wire-stranded-heater-filaments/): Formula `W / AKS-Doped W / W3Re` | CAS `7440-33-7` | Purity: 99.95% Pure W, Potassium-Doped Non-Sag (AKS), & W-3%Re Ductile Grade | Size: Ø 0.015 mm to Ø 3.0 mm Spools, Straightened Cut Lengths, & Multi-Strand Twisted Coils — High-purity 99.95% Pure W, Potassium-Doped Non-Sag (AKS), & W-3%Re Ductile Grade pure & Potassium-Doped Non-Sag tungsten (w / AKS) wire & heater coils (W / AKS-Doped W / W3Re, CAS 7440-33-7) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
- [Molybdenum & Mo-La (ODS) Crucibles, Sintering Boats & Trays (TB-MO-CRU)](https://tensilebase.com/products/molybdenum-crucibles-sintering-trays/): Formula `Mo / Mo-La2O3` | CAS `7439-98-7` | Purity: 99.95% Pure Mo & Lanthanated ODS Mo-La (0.3–0.7 wt% La2O3) | Size: Crucibles OD 10–350 mm; Riveted/Folded/Machined Sintering Boats & Pusher Trays — High-purity 99.95% Pure Mo & Lanthanated ODS Mo-La (0.3–0.7 wt% La2O3) molybdenum & Mo-La (ODS) crucibles, sintering boats & trays (Mo / Mo-La2O3, CAS 7439-98-7) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
- [High-Purity Molybdenum (Mo) Foil, Sheet, Plate & Discs (TB-MO-SH)](https://tensilebase.com/products/molybdenum-foil-sheet-radiation-shields/): Formula `Mo` | CAS `7439-98-7` | Purity: 3N5 (99.95%) / 4N (99.99%) Cross-Rolled & Annealed | Size: Foil 0.025–0.5 mm; Sheet 0.5–3.0 mm; Plate 3.0–40 mm; Stamped/Laser-Cut Discs — High-purity 3N5 (99.95%) / 4N (99.99%) Cross-Rolled & Annealed High-Purity molybdenum (mo) foil, sheet, plate & discs (Mo, CAS 7439-98-7) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
- [Molybdenum (Mo) Rods, Bars, Threaded Studs, Nuts & Washers (TB-MO-ROD)](https://tensilebase.com/products/molybdenum-rods-threaded-furnace-hardware/): Formula `Mo` | CAS `7439-98-7` | Purity: 99.95% Pure Molybdenum (ASTM B387 Type 361) | Size: Rods Ø 1.0–100 mm; Metric M3–M20 & Imperial Threaded Rods, Hex Nuts, & Screws — High-purity 99.95% Pure Molybdenum (ASTM B387 Type 361) molybdenum (mo) rods, bars, threaded studs, nuts & washers (Mo, CAS 7439-98-7) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
- [TZM Molybdenum Alloy (Mo-0.5Ti-0.08Zr) Plate, Rod & Hot-Zone Tooling (TB-MO-TZM)](https://tensilebase.com/products/tzm-molybdenum-alloy-hot-zone-components/): Formula `Mo-0.5Ti-0.08Zr-0.02C` | CAS `7439-98-7` | Purity: ASTM B387 Type 364 (TZM Precipitation-Hardened Alloy) | Size: Rods Ø 3–120 mm; Plate 1–50 mm; Machined Hot-Press Dies, Hearths & Piercing Plugs — High-purity ASTM B387 Type 364 (TZM Precipitation-Hardened Alloy) TZM molybdenum alloy (Mo-0.5Ti-0.08Zr) plate, rod & Hot-Zone tooling (Mo-0.5Ti-0.08Zr-0.02C, CAS 7439-98-7) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
- [High-Purity Tantalum (Ta) Crucibles, Boats & Chemical Liners (TB-TA-CRU)](https://tensilebase.com/products/tantalum-crucibles-diffusion-liners/): Formula `Ta` | CAS `7440-25-7` | Purity: 3N5 (99.95%) / 4N (99.99%) Electron-Beam Melted (RO5200 / RO5400) | Size: Seamless Deep-Drawn & Welded Crucibles OD 10–150 mm × Wall 0.5–5.0 mm — High-purity 3N5 (99.95%) / 4N (99.99%) Electron-Beam Melted (RO5200 / RO5400) High-Purity tantalum (ta) crucibles, boats & chemical liners (Ta, CAS 7440-25-7) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
- [High-Purity Tantalum (Ta) Foil, Sheet, Rod, Wire & Capillary Tubing (TB-TA-SH)](https://tensilebase.com/products/tantalum-foil-sheet-wire-rods/): Formula `Ta` | CAS `7440-25-7` | Purity: 3N5 (99.95%) / 4N (99.99%) Annealed Ductile Grade | Size: Foil 0.01–0.5 mm; Sheet 0.5–6.0 mm; Wire Ø 0.05–3.0 mm; Rods Ø 2–50 mm; Seamless Tube — High-purity 3N5 (99.95%) / 4N (99.99%) Annealed Ductile Grade High-Purity tantalum (ta) foil, sheet, rod, wire & capillary tubing (Ta, CAS 7440-25-7) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
- [High-Purity & Superconducting RRR Niobium (Nb) Foil, Sheet, Rod & Tube (TB-NB-SH)](https://tensilebase.com/products/niobium-foil-sheet-rods-superconducting-grade/): Formula `Nb` | CAS `7440-03-1` | Purity: 3N5 (99.95% Type 1/2) & High-RRR 30–300 Superconducting Electron-Beam Grade | Size: Foil 0.025–0.5 mm; Sheet 0.5–10 mm; Rod Ø 1–60 mm; Wire Ø 0.1–2.0 mm; Seamless Tube — High-purity 3N5 (99.95% Type 1/2) & High-RRR 30–300 Superconducting Electron-Beam Grade High-Purity & superconducting RRR niobium (nb) foil, sheet, rod & tube (Nb, CAS 7440-03-1) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
- [High-Purity Titanium (4N) & Grade 1 / 2 / 5 (Ti-6Al-4V) Foil, Sheet, Rod & Mesh (TB-TI-ML)](https://tensilebase.com/products/titanium-foil-sheet-rods-grade-1-2-5/): Formula `Ti / Ti-6Al-4V` | CAS `7440-32-6` | Purity: 4N (99.99%) Research Grade, CP Grade 1/2 (ASTM B265/B348), & Grade 5 (Ti-6Al-4V) | Size: Foil 0.01–0.5 mm; Sheet 0.5–20 mm; Rod Ø 1–100 mm; Wire Ø 0.1–3 mm; Woven/Expanded Mesh — High-purity 4N (99.99%) Research Grade, CP Grade 1/2 (ASTM B265/B348), & Grade 5 (Ti-6Al-4V) High-Purity titanium (4N) & grade 1 / 2 / 5 (Ti-6Al-4V) foil, sheet, rod & mesh (Ti / Ti-6Al-4V, CAS 7440-32-6) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
- [Zirconium (Zr 702 & Low-Hf 3N5) Crucibles, Foil, Sheet, Rod & Wire (TB-ZR-ML)](https://tensilebase.com/products/zirconium-702-crucibles-foil-rods/): Formula `Zr` | CAS `7440-67-7` | Purity: ASTM B551 Zr 702 (99.2% Zr+Hf) & Low-Hafnium 3N5 (<100 ppm Hf) Research Grade | Size: Fusion Crucibles (15–250 mL); Foil 0.025–0.5 mm; Sheet 0.5–10 mm; Rod Ø 2–50 mm — High-purity ASTM B551 Zr 702 (99.2% Zr+Hf) & Low-Hafnium 3N5 (<100 ppm Hf) Research Grade zirconium (zr 702 & Low-Hf 3N5) crucibles, foil, sheet, rod & wire (Zr, CAS 7440-67-7) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
- [High-Purity Nickel (3N–5N & Ni 200/201) Crucibles, Foil, Sheet, Wire & Mesh (TB-NI-ML)](https://tensilebase.com/products/high-purity-nickel-200-201-crucibles-foil-wire/): Formula `Ni` | CAS `7440-02-0` | Purity: 4N (99.99%) / 5N Research Grade & Low-Carbon Nickel 201 (UNS N02201) | Size: Alkali-Fusion Crucibles (20–250 mL); Foil 0.01–0.5 mm; Wire Ø 0.05–3 mm; Woven Mesh — High-purity 4N (99.99%) / 5N Research Grade & Low-Carbon Nickel 201 (UNS N02201) High-Purity nickel (3N–5N & ni 200/201) crucibles, foil, sheet, wire & mesh (Ni, CAS 7440-02-0) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
- [Tungsten-Rhenium Thermocouple Wire (Type C, Type D & Type G) & Probes (TB-WRE-TC)](https://tensilebase.com/products/tungsten-rhenium-thermocouple-wire-c-d-g/): Formula `W5Re / W26Re & W3Re / W25Re` | CAS `7440-15-5` | Purity: Matched EMF Calibration Grade (ASTM E988 / IEC 60584 Type C & Type D) | Size: Matched Bare Wire Pairs Ø 0.127 mm (0.005"), 0.25 mm (0.010"), 0.38 mm, 0.50 mm + Al2O3/HfO2/BN Insulators — High-purity Matched EMF Calibration Grade (ASTM E988 / IEC 60584 Type C & Type D) Tungsten-Rhenium thermocouple wire (type c, type d & type g) & probes (W5Re / W26Re & W3Re / W25Re, CAS 7440-15-5) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
- [Tungsten-Copper (WCu) & Molybdenum-Copper (MoCu) Thermal Submounts & Electrodes (TB-W-CU)](https://tensilebase.com/products/tungsten-heavy-alloy-wna-wcu-heat-sinks/): Formula `WCu (90/10, 80/20, 75/25) & MoCu (85/15, 70/30)` | CAS `7440-33-7` | Purity: Vacuum Cu-Infiltrated Composite (Zero Open Porosity, Hermetic) | Size: Plates, Sheets (0.25–25 mm), Rods, & CNC-Machined Ni/Au-Plated RF Flanges — High-purity Vacuum Cu-Infiltrated Composite (Zero Open Porosity, Hermetic) Tungsten-Copper (WCu) & Molybdenum-Copper (MoCu) thermal submounts & electrodes (WCu (90/10, 80/20, 75/25) & MoCu (85/15, 70/30), CAS 7440-33-7) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
- [Magnesia (MgO 99.4%–99.8%) Crucibles, Tubes & Setter Plates (TB-MGO-CR)](https://tensilebase.com/products/magnesia-mgo-ceramic-crucibles-tubes/): Formula `MgO` | CAS `1309-48-4` | Purity: 99.4% – 99.8% High-Purity Sintered Magnesia | Size: Crucibles 5 mL to 2,000 mL; Setter Plates & Tubes — High-purity sintered magnesia (MgO, CAS 1309-48-4) crucibles and setter plates engineered for superalloy vacuum induction melting, beta-alumina/PZT sintering, and molten metal processing up to 2,200 °C.
- [Zirconia-Toughened Alumina (ZTA) Structural & Wear Components (TB-ZTA-CM)](https://tensilebase.com/products/zirconia-toughened-alumina-zta-ceramics/): Formula `Al2O3-ZrO2 (10–20 wt% YSZ)` | CAS `1344-28-1` | Purity: 80–90% Al2O3 + 10–20% 3Y-TZP Composite | Size: Rods, Plates, Plungers, Valve Seats, & CNC-Ground Drawings — Dispersion-strengthened Zirconia-Toughened Alumina (ZTA) structural ceramics combining alumina's extreme hardness (1,650 HV) with zirconia's transformation-toughened fracture resistance (6–8 MPa·m½).
- [Microporous Alumina & SiC Ceramic Plates, Filters & Wafer Vacuum Chucks (TB-POR-CK)](https://tensilebase.com/products/porous-alumina-sic-ceramic-vacuum-chucks/): Formula `Al2O3 / SiC (Controlled Open Porosity)` | CAS `1344-28-1` | Purity: Controlled Pore Size 1 µm to 100 µm (30%–48% Open Porosity) | Size: Discs Ø 25–350 mm, Rectangular Plates, & Bonded Dense-Border Vacuum Chucks — Precision-planarity microporous alumina and silicon carbide ceramic plates (1–100 µm pore size) for semiconductor wafer vacuum chucks, air bearings, and high-temperature filtration.
- [Titanium Diboride (TiB2) Conductive Ceramics & Intermetallic Evaporation Boats (TB-TIB2-CM)](https://tensilebase.com/products/titanium-diboride-tib2-evaporation-boats-ceramics/): Formula `TiB2 / TiB2-BN-AlN` | CAS `12045-63-5` | Purity: Hot-Pressed Monolithic TiB2 (≥98% TD) & 2-/3-Component TiB2-BN-AlN Boats | Size: Evaporation Boats (100–150 mm), Plates, Discs, & EDM-Machined Shapes — Electrically conductive hot-pressed titanium diboride (TiB2, CAS 12045-63-5) plates and composite TiB2-BN-AlN resistive evaporation boats for continuous aluminum web/batch PVD and molten metal contact.
- [Multi-Bore Alumina (99.7% Al2O3) Thermocouple Insulator Beads & Rods (TB-AL2O3-MB)](https://tensilebase.com/products/alumina-mullite-multi-bore-thermocouple-insulators/): Formula `Al2O3 (99.7% C799)` | CAS `1344-28-1` | Purity: 99.7% Recrystallized Alumina (DIN VDE 0335 Type C799) | Size: OD 0.8 mm to 25 mm × 2-Bore, 4-Bore, or 6-Bore × Lengths 5 mm to 1,500 mm — Extruded 99.7% high-purity alumina 2-bore, 4-bore, and 6-bore capillary insulator rods and beads for Type R, S, B, K, and C high-temperature thermocouples and UHV feedthroughs.
- [Semiconductor Fused Quartz Beakers, Wet-Bench Tanks & Vacuum Bell Jars (TB-SIO2-BK)](https://tensilebase.com/products/fused-quartz-crucibles-dishes-beakers/): Formula `SiO2 (99.995%)` | CAS `60676-86-0` | Purity: 99.995% Semiconductor & Trace-Metal Analytical Grade | Size: Beakers 25 mL to 5,000 mL; Rectangular RCA Wet-Bench Tanks; Flanged Quartz Bell Jars — Semiconductor-grade 99.995% clear fused quartz beakers, rectangular wafer wet-bench tanks, and flanged vacuum bell jars with sub-ppm metallic leaching and extreme thermal-shock immunity.
- [UV-VIS-NIR Fused Quartz Spectrophotometer & Fluorometer Cuvettes (190–2,500 nm) (TB-SIO2-CV)](https://tensilebase.com/products/quartz-uv-vis-nir-spectrophotometer-cuvettes/): Formula `SiO2 (JGS1 / JGS2 / JGS3)` | CAS `60676-86-0` | Purity: JGS1 Synthetic Far-UV Quartz (190–2,500 nm) & JGS3 IR Quartz (260–3,500 nm) | Size: Path Lengths: 1 mm, 2 mm, 5 mm, 10 mm, 20 mm, 50 mm, 100 mm (Standard 12.5×12.5×45 mm OD) — Direct thermally fused (adhesive-free) JGS1 UV-VIS-NIR quartz spectrophotometer and fluorometer cuvettes with >80% transmission from 190 nm to 2,500 nm and matched pair transmission within ≤0.5%.
- [Sintered Porous Quartz Fritted Discs, Precision Quartz Rods & Micro-Capillaries (TB-SIO2-FR)](https://tensilebase.com/products/quartz-capillary-tubes-rods-frits/): Formula `SiO2 (99.99%)` | CAS `60676-86-0` | Purity: 99.99% Fused Quartz (Porous Grades G00/G0/G1/G2/G3/G4/G5 & Solid/Capillary) | Size: Frits Ø 4–150 mm × 1.5–6 mm; Solid Rods Ø 1–60 mm; Capillaries ID 0.1–4 mm — Sintered porous fused quartz fritted discs (porosities G0–G5, 2–250 µm), precision centerless-ground quartz rods, and micro-capillary tubing for plug-flow catalyst reactors and gas sparging.
- [CVD SiC-Coated & TaC-Coated Graphite Susceptors, Wafer Carriers & Heaters (TB-GR-SIC)](https://tensilebase.com/products/sic-coated-graphite-susceptors-wafers/): Formula `C + CVD β-SiC (80–150 µm) / TaC` | CAS `409-21-2` | Purity: < 5 ppm Purified Isostatic Graphite + 6N CVD β-SiC or Sintered TaC Coating | Size: 2", 4", 6", 8" Wafer Pocket Susceptors, Multi-Wafer Planetary Discs, & Custom Heaters — CTE-matched purified isostatic graphite susceptors encapsulated in dense 6N CVD β-SiC or tantalum carbide (TaC) coatings for GaN MOCVD, SiC CVD epitaxy, and 2,200 °C PVT crystal growth.
- [Carbon-Carbon (C/C) Composite Plates, Charging Grids, Channels & Fasteners (TB-CFC-PL)](https://tensilebase.com/products/carbon-carbon-cfc-composite-fasteners-plates/): Formula `C/C (2D / 2.5D Carbon-Fiber Reinforced Carbon)` | CAS `7440-44-0` | Purity: CVI / Pitch-Densified 2D & 2.5D Carbon-Carbon Composite (<200 ppm or <20 ppm Purified) | Size: Plates 1–30 mm, U/L-Profiles, Charging Grids, & M6–M24 C/C Bolts/Nuts/Rods — High-strength 2D/2.5D carbon-fiber-reinforced carbon (C/C, CFC) composite structural plates, charging grids, hot-press sleeves, and M6–M24 threaded fasteners for vacuum furnaces up to 2,500 °C.
- [High-Purity Graphite Crucibles, Stopper Rods & Continuous Casting Dies (TB-GR-CRU)](https://tensilebase.com/products/graphite-crucibles-induction-melting-casting/): Formula `C (99.9%–99.999%)` | CAS `7440-44-0` | Purity: Isostatic Fine-Grain (<20–50 ppm Ash) & Halogen-Purified (<5 ppm Ash) Grades | Size: Crucibles 5 mL to 50 L; Induction Susceptor Crucibles; Continuous Casting Dies — Precision-machined high-purity isostatic graphite melting crucibles, clay-free analytical fusion capsules, and continuous casting dies for precious metals, copper alloys, silicon, and crystal growth.
- [High-Purity Flexible Graphite Foil, Hot-Press Release Sheets & Vacuum Gaskets (TB-GR-FL)](https://tensilebase.com/products/expanded-flexible-graphite-foil-gaskets/): Formula `C (99.5% – 99.95% Exfoliated Graphite)` | CAS `7440-44-0` | Purity: 99.5% Industrial, 99.85% Nuclear (<50 ppm S/Cl), & 99.95% Semiconductor Grade | Size: Thickness 0.05 mm, 0.13 mm, 0.25 mm, 0.38 mm, 0.50 mm, 0.80 mm, 1.0 mm, 1.5 mm, 2.0 mm, 3.0 mm — Binder-free exfoliated flexible graphite foil (0.05–3.0 mm) for Spark Plasma Sintering (SPS) die/punch release liners, high-temperature vacuum gaskets, and anisotropic heat spreaders.
- [Coin-Cell Hardware Kits (CR2032, CR2025, CR2016), Spacers, Wave Springs & Split Test Cells (TB-BAT-CC)](https://tensilebase.com/products/coin-cell-cr2032-cr2025-cases-spacers-springs/): Formula `316L SS / 304 SS / Al-Clad / Ti` | CAS `7439-89-6` | Purity: Electropolished 316L / 304 Stainless Steel & High-Voltage Al-Clad Positive Cans | Size: CR2032 (Ø20×3.2 mm), CR2025 (Ø20×2.5 mm), CR2016 (Ø20×1.6 mm) + Ø15.8×0.5/1.0 mm Spacers — Cleanroom ultrasonic-cleaned 316L and 304 stainless-steel CR2032/CR2025/CR2016 coin-cell cases, PP-gasketed caps, spacer discs, wave springs, and Al-clad high-voltage positive cans.
- [Battery-Grade Copper Foil (9 µm), Aluminum Foil (15 µm) & Carbon-Coated Current Collectors (TB-BAT-FL)](https://tensilebase.com/products/battery-grade-copper-aluminum-carbon-coated-foils/): Formula `Cu (≥99.9%) / Al (≥99.6%) / C-Coated Al & Cu` | CAS `7440-50-8` | Purity: Electrolytic / Rolled Battery Grade (Cu ≥99.9%, Al 1235/1060 ≥99.6%) | Size: Cu Foil 6, 8, 9, 12, 15, 25 µm; Al Foil 12, 15, 16, 20 µm; Widths 150–300 mm & Pre-Punched Discs — Electrodeposition and rolled battery-grade copper foil (6–25 µm), aluminum foil (12–25 µm), and 1 µm conductive-carbon-coated Al/Cu current collectors for Li-ion, Na-ion, and supercapacitor doctor-blade coating.
- [Carbon Fiber Paper, Carbon Cloth & MPL-Coated Gas Diffusion Layers (GDL) (TB-EC-GDL)](https://tensilebase.com/products/carbon-paper-cloth-gas-diffusion-layers-gdl/): Formula `C / PTFE (Graphitized PAN Carbon Fiber)` | CAS `7440-44-0` | Purity: Graphitized >99.5% Carbon (Hydrophilic Untreated, PTFE-Wetproofed, or MPL-Coated) | Size: Thickness 110–420 µm; Sheets 200×200 mm, 300×300 mm, 400×400 mm & Rolls — Graphitized carbon fiber paper, woven carbon cloth, and PTFE/microporous-layer (MPL) coated Gas Diffusion Layers (GDL) for PEM fuel cells, CO2/N2 electroreduction, and redox flow batteries.
- [Planetary Ball Mill Jars & Media (Tungsten Carbide, Agate, Alumina, Si3N4, PTFE & 316L SS) (TB-MIL-WC)](https://tensilebase.com/products/tungsten-carbide-alumina-agate-ptfe-milling-jars/): Formula `WC-Co / SiO2 (Agate) / Al2O3 / Si3N4 / PTFE / Nylon` | CAS `12070-12-1` | Purity: WC-6%Co, Natural Brazilian Agate (99.9% SiO2), 99.5% Al2O3, Si3N4, Virgin PTFE, & 316L SS | Size: Jars: 50 mL, 100 mL, 250 mL, 500 mL, 1,000 mL + Matching Balls (Ø 1–20 mm) — Matched planetary ball-mill grinding jars and milling balls in Tungsten Carbide (WC-Co), Natural Brazilian Agate, 99.5% Alumina, Silicon Nitride, PTFE, and 316L Stainless Steel (50 mL to 1,000 mL).