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Thin Film Materials · TB-PVD-MOO3

Molybdenum Trioxide (MoO3) Sputtering Targets

High-density hot-pressed molybdenum trioxide (MoO3, CAS 1313-27-5) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.

Alternate & search designations: Molybdenum Trioxide RF magnetron target, MoO3 PVD dielectric cathode disc, 4N MoO3 hole-transport & 2D precursor sputtering target
Purity / Grade Options4N (99.99%)
Standard DimensionsØ 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
Available ConfigurationsHot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
Ordering & MOQSpecification-based quote · Prototype & production lots

Material & Engineering Overview

Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99%) precursor powders, our molybdenum trioxide (MoO3, CAS 1313-27-5) sputtering targets achieve high relative density (typically 96%–99.5% of 4.65 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

High-work-function (~6.7 eV) sintered MoO3 targets enable damage-free sputter or thermal deposition of hole-selective contacts and 2D MoS2 precursors. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering MoO3 targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

Standard Shipment Documentation: Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

Primary Research & Industrial Applications

  • High-work-function hole-injection / hole-transport layers (HIL/HTL) in OLEDs and perovskite solar cells
  • Dopant-free selective hole contacts for crystalline silicon heterojunction solar cells
  • Two-step sulfurization precursor for wafer-scale 2D MoS2 synthesis
  • Electrochromic and neuromorphic synaptic transistor channels

Nominal Material Reference Properties

Property / MetricNominal Reference Value (Grade Dependent)
Formula & CAS #MoO3 (CAS 1313-27-5)
Purity Grades4N (99.99%)
Bulk / Theoretical Density4.65 g/cm³ (≥96%–99.5% relative density)
Recommended BondingMetallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
Recommended Power RampRF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.

What to Specify in Your Quote Request

Specify MoO3 purity (4N (99.99%)), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.

Prepare Molybdenum Trioxide (MoO3) Sputtering Targets RFQ ↗

Technical & Procurement FAQ

Why should molybdenum trioxide (MoO3) targets be indium-bonded to an OFHC copper backing plate?
As a brittle ceramic, MoO3 develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
What RF power conditioning procedure avoids cracking a new MoO3 target?
Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
Is oxygen or nitrogen reactive gas backfill needed when sputtering MoO3?
RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.
Cross-referenced catalog

Related technical materials.

Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.

Oxide & Nitride Ceramic Sputtering Targets (ITO / ZnO / Al2O3 / SiO2 / TiO2 / AlN / SiC, CAS 50926-11-9) — Thin Film Materials studio photographTB-PVD-OX
Thin Film MaterialsITO / ZnO / Al2O3 / SiO2 / TiO2 / AlN / SiC · 50926-11-9

Oxide & Nitride Ceramic Sputtering Targets

High-density hot-pressed and HIP-consolidated oxide, nitride, carbide, and sulfide ceramic sputtering targets (ITO, AZO, ZnO, Al2O3, SiO2, TiO2, BaTiO3) indium-bonded for arc-free RF/pulsed-DC PVD.

Purity / Grade99.9% (3N) / 99.99% (4N) / 99.995% (4N5)
Typical SizeØ 1", 2", 3", 4", 6" × Thickness 2–6 mm (+ Cu Backing Plate)
Molybdenum (Mo) Sputtering Targets (Mo, CAS 7439-98-7) — Thin Film Materials studio photographTB-PVD-MO
Thin Film MaterialsMo · 7439-98-7

Molybdenum (Mo) Sputtering Targets

Vacuum-melted high-purity molybdenum (Mo, CAS 7439-98-7) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 4N5 grades for semiconductor, optical, and research PVD.

Purity / Grade3N5 (99.95%) / 4N (99.99%) / 4N5
Typical SizeØ 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
Custom & catalog specifications

Need pricing, lead time, or custom dimensions?

Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.

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