High-density hot-pressed and HIP-consolidated oxide, nitride, carbide, and sulfide ceramic sputtering targets (ITO, AZO, ZnO, Al2O3, SiO2, TiO2, BaTiO3) indium-bonded for arc-free RF/pulsed-DC PVD.
Dielectric and transparent-conducting-oxide (TCO) ceramic sputtering targets require high sintered relative density (≥98%–99.5% for ITO/ZnO) and uniform stoichiometry to suppress nodule growth, micro-arcing, and thermal cracking under RF or pulsed-DC magnetron plasma. Because ceramics have low thermal shock tolerance, bonding to an OFHC copper backing plate with pure metallic indium is strongly recommended for reliable heat extraction.
Standard compositions include ITO (In2O3:SnO2 90:10 wt%), AZO (ZnO:Al2O3 98:2 wt%), IGZO, ZnO, Al2O3, SiO2, TiO2, Ta2O5, Nb2O5, HfO2, ZrO2/YSZ, BaTiO3, LiCoO2/Li3PO4 battery oxides, AlN, Si3N4, TiN, and SiC.
| Property / Metric | Nominal Reference Value (Grade Dependent) |
|---|---|
| Purity | 99.9% (3N) to 99.995% (4N5) |
| Relative Sintered Density | ≥99.5% (ITO) / 95%–99% (oxides & nitrides by HIP/hot-pressing) |
| Recommended Bonding | Metallic Indium bond to OFHC Cu backing plate (max target temp <150 °C) |
| RF Power Ramp | Gradual RF power conditioning (5–10 W/min) recommended |
| Standard Thicknesses | 3.0 mm, 3.175 mm (1/8"), 5.0 mm, 6.35 mm (1/4") |
Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.
Specify exact chemical formula and weight/mole dopant ratio (e.g., In2O3:SnO2 90:10 wt%), purity, target diameter × ceramic thickness, backing plate total thickness/step geometry (or gun model), and indium vs. elastomer bond.
Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.
Prepare Oxide & Nitride Ceramic Sputtering Targets RFQ ↗Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.
TB-PVD-MTVacuum-melted and thermomechanically forged pure metal and custom alloy planar sputtering targets (3N5–5N) sized for research and production magnetron cathodes.
TB-SIO2-WNPrecision double-side optically polished UV synthetic fused silica (JGS1), optical quartz (JGS2), and full-spectrum IR fused silica (JGS3) windows and wafer substrates.
TB-SAP-SBEpi-ready single-crystal sapphire substrates (C-, R-, A-, M-plane) and Mohs-9 optical sapphire pressure/IR windows from 180 nm UV to 5.0 µm mid-IR.
TB-PVD-QCMPrecision 6.0 MHz and 5.0 MHz AT-cut plano-convex quartz crystal microbalance (QCM) thickness monitor sensors with gold or stress-relieving alloy electrodes in cleanroom dispenser packs.
Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.