Source technical ceramics, 99.99% fused quartz, single-crystal substrates, isostatic graphite, PVD sputtering targets, evaporation pellets, refractory metals, and battery labware—indexed by chemical formula, CAS number, and engineering tolerance.
Select a category hub for comparison tables and specification guides, or filter the complete 154-line catalog below by element, CAS number, or keyword.
16 linesAlumina, h-BN, YSZ zirconia, SiC, and machinable glass-ceramic components.
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20 lines99.99% SiO2 furnace tubes, wafer boats, UV silica windows, and sapphire substrates.
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10 linesIsostatic graphite crucibles, CNC heaters, molds, vacuum felt, and glassy carbon.
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80 linesPlanar sputtering targets, evaporation pellets, e-beam liners, boats, and QCM crystals.
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20 linesTungsten, molybdenum, tantalum, niobium, and titanium foils, boats, rods, and crucibles.
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8 linesPorous Ni/Cu foam, sintered Ti felt PTL, YSZ milling jars/media, and PTFE autoclaves.
Explore category & specs →Every listing includes nominal physical properties, standard purity tiers, and manufacturer batch COA coverage. Need a custom drawing? Submit an RFQ directly.
TB-AL2O3-TUImpervious high-purity sintered alumina furnace and process tubes for tube furnaces, CVD/annealing, and high-temperature thermal systems.
TB-AL2O3-CRHigh-purity cylindrical, conical, and rectangular alumina crucibles and matching lids for high-temperature melting, calcination, and gravimetric analysis.
TB-AL2O3-TCImpervious C799 closed-end protection sheaths and multi-bore insulator rods safeguarding Type R, S, B, and K thermocouples in harsh thermal environments.
TB-AL2O3-BTHigh-purity open and lidded alumina sample boats sized to slide cleanly inside laboratory quartz and ceramic tube furnaces.
TB-AL2O3-RDHigh-stiffness solid sintered alumina rods and centerless-ground shafts for kiln supports, vacuum fixtures, metrological guides, and electrical standoffs.
TB-AL2O3-PLThin tape-cast electronic substrates (96% / 99.6%) and thick precision-ground alumina setter and wear plates with optional laser cutting or CNC machining.
TB-CER-INSCustom-machined electrical, RF, vacuum, and thermal ceramic bushings, flanged washers, standoffs, and heater bobbins built to your engineering drawing.
TB-HBN-MCHot-pressed hexagonal boron nitride (h-BN) crucibles, rods, plates, and precision CNC components combining extreme thermal shock resistance, molten-metal non-wetting, and electrical insulation.
TB-ZRO2-CRTransformation-toughened 3Y-TZP structural zirconia parts and ultra-refractory YSZ/Mg-PSZ crucibles, setter plates, and tubes rated up to 2,100 °C.
TB-SIC-CMPExtreme-hardness sintered silicon carbide (SSiC) and thermal-shock-proof silicon nitride (Si3N4) wear components, kiln furniture, seal rings, and molten-metal hardware.
TB-MGC-STKZero-porosity fluorphlogopite mica glass-ceramic rods, plates, and finished CNC parts that machine with standard metalworking tools with zero post-firing shrinkage.
TB-SIO2-TUOptically clear 99.99% (4N) fused quartz process tubes for CVD graphene/2D growth, semiconductor diffusion, photochemistry, and rapid-quench tube furnaces up to 1,150 °C.
TB-SIO2-BTUltra-clean 99.99% fused quartz combustion boats, lidded CVD precursor sleds, and precision-slotted wafer carriers for contamination-free thermal processing.
TB-SIO2-CRFlame-polished 99.99% clear fused quartz crucibles, lids, and evaporating dishes for ultra-trace acid digestion, phosphor firing, and thermal shock cycling.
TB-SIO2-WNPrecision double-side optically polished UV synthetic fused silica (JGS1), optical quartz (JGS2), and full-spectrum IR fused silica (JGS3) windows and wafer substrates.
TB-SAP-SBEpi-ready single-crystal sapphire substrates (C-, R-, A-, M-plane) and Mohs-9 optical sapphire pressure/IR windows from 180 nm UV to 5.0 µm mid-IR.
TB-GR-CRPrecision CNC-turned fine-grain isostatic graphite crucibles with low ash content (<20–500 ppm) for non-ferrous, precious metal, alloy, and crystal-growth melting.
TB-GR-CNCPrecision CNC-machined isostatic graphite vacuum-furnace heaters, susceptors, brazing fixtures, wafer carriers, and graphite nuts/bolts made to customer CAD drawings.
TB-GR-PLPrecision ground fine-grain and isostatic graphite sheets, setter plates, EDM blocks, rods, and impermeable resin-impregnated bipolar plates.
TB-GR-MLDHigh-compressive-strength fine-grain graphite Spark Plasma Sintering (SPS) die/punch sets, hot-press sleeves, continuous casting dies, and polished ingot molds.
TB-GR-FLTHigh-purity graphitized soft felt rolls, CNC-machined rigid graphite insulation cylinders/boards, and activated battery electrode felts for vacuum furnaces and energy storage.
TB-PG-GCUltra-pure 5N CVD pyrolytic graphite (anisotropic thermal/diamagnetic plates) and mirror-polished gas-impermeable glassy (vitreous) carbon electrodes, wafers, and crucibles.
TB-PVD-MTVacuum-melted and thermomechanically forged pure metal and custom alloy planar sputtering targets (3N5–5N) sized for research and production magnetron cathodes.
TB-PVD-OXHigh-density hot-pressed and HIP-consolidated oxide, nitride, carbide, and sulfide ceramic sputtering targets (ITO, AZO, ZnO, Al2O3, SiO2, TiO2, BaTiO3) indium-bonded for arc-free RF/pulsed-DC PVD.
TB-PVD-EVVacuum-degassed 4N–5N metal evaporation slugs/shots and optical dielectric granules (SiO2, Ti3O5, MgF2, Al2O3) engineered for spit-free e-beam and thermal PVD.
TB-PVD-LNPrecision-tapered e-beam gun hearth liners in OFHC copper, purified & impermeable graphite, vitreous carbon, molybdenum, tungsten, alumina, and h-BN.
TB-PVD-BT99.95% pure tungsten, molybdenum, and tantalum resistive thermal evaporation boats, baffled box sources, and stranded tungsten wire baskets/coils.
TB-PVD-QCMPrecision 6.0 MHz and 5.0 MHz AT-cut plano-convex quartz crystal microbalance (QCM) thickness monitor sensors with gold or stress-relieving alloy electrodes in cleanroom dispenser packs.
TB-W-CMPUltra-high-melting-point (3,422 °C) 99.95%+ pure tungsten crucibles, centerless-ground rods, rolled sheets, wire, and hot-zone elements for extreme vacuum thermal systems.
TB-MO-CMP99.95% pure molybdenum, lanthanated Mo-La, and TZM alloy sintering boats, rolled sheets, rods, crucibles, fasteners, and carbon-free vacuum furnace heat shields.
TB-TA-NBDuctile 99.95%–99.99% electron-beam melted tantalum and niobium foils, plates, rods, tubes, and deep-drawn crucibles combining glass-like acid immunity with 3,017 °C refractory performance.
TB-TI-GRCommercially pure (Grade 1/2), Ti-6Al-4V (Grade 5), and 99.99% high-purity titanium foils, plates, rods, woven/expanded mesh, and MMO-coated electrochemical anodes.
TB-BAT-FMHigh-porosity (95%–98%) 3D reticulated open-cell nickel, copper, and Fe-Ni metal foams in lab sheets, rolls, and pre-punched coin-cell discs for battery, supercapacitor, and electrocatalysis R&D.
TB-EC-TIFVacuum-sintered pure titanium microfiber felt (0.2–1.0 mm) and platinized Ti porous transport layers (PTLs) engineered for PEM water electrolyzers, regenerative fuel cells, and corrosive filtration.
TB-MIL-ZRHigh-density (6.0 g/cm³), mirror-polished 95% yttria-stabilized zirconia (3Y-TZP) grinding balls/beads and planetary ball-mill jars for ultra-low-wear, iron-free sub-micron milling.
TB-LAB-HYD316L stainless-steel hydrothermal and solvothermal synthesis autoclave reactors with removable virgin PTFE (up to 220 °C) or high-temperature PPL (up to 280 °C) inert liners.
TB-PVD-TIVacuum-melted high-purity titanium (Ti, CAS 7440-32-6) planar magnetron sputtering targets in 4N (99.99%) / 4N5 (99.995%) / 5N grades for semiconductor, optical, and research PVD.
TB-PVD-CRVacuum-melted high-purity chromium (Cr, CAS 7440-47-3) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 4N5 grades for semiconductor, optical, and research PVD.
TB-PVD-ALVacuum-melted high-purity aluminum (Al, CAS 7429-90-5) planar magnetron sputtering targets in 4N (99.99%) / 5N (99.999%) / 5N5 grades for semiconductor, optical, and research PVD.
TB-PVD-CUVacuum-melted high-purity copper (Cu, CAS 7440-50-8) planar magnetron sputtering targets in 4N5 (99.995%) / 5N (99.999%) / 6N OFHC grades for semiconductor, optical, and research PVD.
TB-PVD-NIVacuum-melted high-purity nickel (Ni, CAS 7440-02-0) planar magnetron sputtering targets in 4N (99.99%) / 4N5 (99.995%) / 5N grades for semiconductor, optical, and research PVD.
TB-PVD-WVacuum-melted high-purity tungsten (W, CAS 7440-33-7) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 5N grades for semiconductor, optical, and research PVD.
TB-PVD-MOVacuum-melted high-purity molybdenum (Mo, CAS 7439-98-7) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 4N5 grades for semiconductor, optical, and research PVD.
TB-PVD-TAVacuum-melted high-purity tantalum (Ta, CAS 7440-25-7) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 4N5 grades for semiconductor, optical, and research PVD.
TB-PVD-NBVacuum-melted high-purity niobium (Nb, CAS 7440-03-1) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / High-RRR 4N5 grades for semiconductor, optical, and research PVD.
TB-PVD-SIVacuum-melted high-purity silicon (Si, CAS 7440-21-3) planar magnetron sputtering targets in 5N (99.999%) / 6N Intrinsic, B-doped (p-type), or P-doped (n-type) grades for semiconductor, optical, and research PVD.
TB-PVD-GEVacuum-melted high-purity germanium (Ge, CAS 7440-56-4) planar magnetron sputtering targets in 5N (99.999%) / 6N (99.9999%) Intrinsic or Ga/Sb-Doped grades for semiconductor, optical, and research PVD.
TB-PVD-VVacuum-melted high-purity vanadium (V, CAS 7440-62-2) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) grades for semiconductor, optical, and research PVD.
TB-PVD-ZRVacuum-melted high-purity zirconium (Zr, CAS 7440-67-7) planar magnetron sputtering targets in 3N5 (99.95% Grade 702) / 4N Low-Hf (<100 ppm Hf) grades for semiconductor, optical, and research PVD.
TB-PVD-HFVacuum-melted high-purity hafnium (Hf, CAS 7440-58-6) planar magnetron sputtering targets in 3N5 (99.95% excl. Zr) / 4N Low-Zr grades for semiconductor, optical, and research PVD.
TB-PVD-COVacuum-melted high-purity cobalt (Co, CAS 7440-48-4) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 4N5 grades for semiconductor, optical, and research PVD.
TB-PVD-FEVacuum-melted high-purity iron (Fe, CAS 7439-89-6) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 4N5 grades for semiconductor, optical, and research PVD.
TB-PVD-MNVacuum-melted high-purity manganese (Mn, CAS 7439-96-5) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) grades for semiconductor, optical, and research PVD.
TB-PVD-ZNVacuum-melted high-purity zinc (Zn, CAS 7440-66-6) planar magnetron sputtering targets in 4N (99.99%) / 4N5 (99.995%) / 5N grades for semiconductor, optical, and research PVD.
TB-PVD-SNVacuum-melted high-purity tin (Sn, CAS 7440-31-5) planar magnetron sputtering targets in 4N (99.99%) / 4N5 / 5N (99.999%) grades for semiconductor, optical, and research PVD.
TB-PVD-INVacuum-melted high-purity indium (In, CAS 7440-74-6) planar magnetron sputtering targets in 4N5 (99.995%) / 5N (99.999%) / 6N grades for semiconductor, optical, and research PVD.
TB-PVD-BIVacuum-melted high-purity bismuth (Bi, CAS 7440-69-9) planar magnetron sputtering targets in 4N (99.99%) / 4N5 / 5N (99.999%) grades for semiconductor, optical, and research PVD.
TB-PVD-SBVacuum-melted high-purity antimony (Sb, CAS 7440-36-0) planar magnetron sputtering targets in 4N (99.99%) / 4N5 / 5N (99.999%) grades for semiconductor, optical, and research PVD.
TB-PVD-TEVacuum-melted high-purity tellurium (Te, CAS 13494-80-9) planar magnetron sputtering targets in 4N (99.99%) / 4N5 / 5N (99.999%) grades for semiconductor, optical, and research PVD.
TB-PVD-YVacuum-melted high-purity yttrium (Y, CAS 7440-65-5) planar magnetron sputtering targets in 3N (99.9%) / 3N5 (99.95% REM) grades for semiconductor, optical, and research PVD.
TB-PVD-SCVacuum-melted high-purity scandium (Sc, CAS 7440-20-2) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99% REM) grades for semiconductor, optical, and research PVD.
TB-PVD-REVacuum-melted high-purity Rare-Earth metal (la, ce, gd, nd, er, yb) (La / Ce / Gd / Nd / Er / Yb, CAS 7439-91-0) planar magnetron sputtering targets in 3N (99.9%) / 3N5 (99.95%) / 4N (REM basis) grades for semiconductor, optical, and research PVD.
TB-PVD-AGVacuum-melted high-purity silver (Ag, CAS 7440-22-4) planar magnetron sputtering targets in 4N (99.99%) / 4N5 (99.995%) / 5N grades for semiconductor, optical, and research PVD.
TB-PVD-TIWVacuum-melted high-purity Titanium-Tungsten (TiW 10/90) (TiW (10:90 wt% / 30:70 at.%), CAS 7440-33-7) planar magnetron sputtering targets in 3N5 (99.95%) / 4N Low-Alkali Semiconductor Grade grades for semiconductor, optical, and research PVD.
TB-PVD-NICRVacuum-melted high-purity Nickel-Chromium (NiCr 80/20) (NiCr (80:20 / 60:40 / 50:50 wt%), CAS 11106-97-1) planar magnetron sputtering targets in 3N5 (99.95%) / 4N grades for semiconductor, optical, and research PVD.
TB-PVD-NIFEVacuum-melted high-purity permalloy (Ni80Fe20 & CoFeB) (Ni80Fe20 / Ni81Fe19 / Co40Fe40B20, CAS 12168-54-6) planar magnetron sputtering targets in 3N5 (99.95%) / 4N Vacuum-Induction Melted grades for semiconductor, optical, and research PVD.
TB-PVD-ALSCVacuum-melted high-purity Aluminum-Scandium (AlSc alloy) (Al1-xScx (Sc 5–43 at.%), CAS 60683-64-9) planar magnetron sputtering targets in 4N (99.99%) Vacuum-Melted / HIP Intermetallic grades for semiconductor, optical, and research PVD.
TB-PVD-CIGSVacuum-melted high-purity Copper-Gallium & CIGS alloy (CuGa (70:30 / 75:25) & CuInGaSe2, CAS 57606-41-4) planar magnetron sputtering targets in 4N (99.99%) / 4N5 grades for semiconductor, optical, and research PVD.
TB-PVD-ITOHigh-density hot-pressed indium tin oxide (In2O3:SnO2 (90:10 wt%), CAS 50926-11-9) ceramic sputtering targets in 4N (99.99%) · ≥99.5% Relative Density purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-AZOHigh-density hot-pressed Aluminum-Doped zinc oxide (AZO) (ZnO:Al2O3 (98:2 wt%), CAS 1314-13-2) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-ZNOHigh-density hot-pressed zinc oxide (ZnO, CAS 1314-13-2) ceramic sputtering targets in 4N (99.99%) / 4N5 / 5N purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-ALOHigh-density hot-pressed aluminum oxide (alumina) (Al2O3, CAS 1344-28-1) ceramic sputtering targets in 4N (99.99%) / 4N5 purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-SIO2High-density hot-pressed silicon dioxide (fused quartz) (SiO2, CAS 60676-86-0) ceramic sputtering targets in 4N5 (99.995%) / 5N (99.999%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-TIO2High-density hot-pressed titanium dioxide (TiO2 / TiO2-x, CAS 13463-67-7) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-TA2O5High-density hot-pressed tantalum pentoxide (Ta2O5, CAS 1314-61-0) ceramic sputtering targets in 4N (99.99%) / 4N5 (99.995%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-NB2O5High-density hot-pressed niobium pentoxide (Nb2O5, CAS 1313-96-8) ceramic sputtering targets in 4N (99.99%) / 4N5 purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-HFO2High-density hot-pressed hafnium dioxide (hafnia) (HfO2, CAS 12055-23-1) ceramic sputtering targets in 4N (99.99% excl. Zr) / Low-Zr 4N purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-ZRO2High-density hot-pressed zirconium dioxide & YSZ (ZrO2 / 8 mol% Y2O3-ZrO2, CAS 1314-23-4) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-WO3High-density hot-pressed tungsten trioxide (WO3, CAS 1314-35-8) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-MOO3High-density hot-pressed molybdenum trioxide (MoO3, CAS 1313-27-5) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-NIOHigh-density hot-pressed nickel oxide (NiO (or Li-doped NiOx), CAS 1313-99-1) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-SNO2High-density hot-pressed tin dioxide & Antimony/Fluorine doped (SnO2 / ATO (SnO2:Sb2O3), CAS 18282-10-5) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-IGZOHigh-density hot-pressed indium gallium zinc oxide (IGZO) (InGaZnO4 (In:Ga:Zn = 1:1:1 at.%), CAS Composition dependent; confirm supplier SDS) ceramic sputtering targets in 4N (99.99%) · High-Density Conductive Ceramic purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-BSTHigh-density hot-pressed barium titanate & barium strontium titanate (BaTiO3 / Ba1-xSrxTiO3 (BST), CAS 12047-27-7) ceramic sputtering targets in 3N5 (99.95%) / 4N purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-PZTHigh-density hot-pressed lead zirconate titanate (PZT 52/48) (Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO), CAS 12626-81-2) ceramic sputtering targets in 3N5 (99.95%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-LIBHigh-density hot-pressed Solid-State battery targets (LiCoO2, Li3PO4, LLZO) (LiCoO2 / Li3PO4 / LiMn2O4 / Li4Ti5O12 / LLZO, CAS 12190-79-3) ceramic sputtering targets in 3N5 (99.95%) / 4N (with optional 10–15% Li excess) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-ALNHigh-density hot-pressed aluminum nitride (AlN, CAS 24304-00-5) ceramic sputtering targets in 3N5 (99.95%) / 4N purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-SI3N4High-density hot-pressed silicon nitride (Si3N4, CAS 12033-89-5) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-TINHigh-density hot-pressed titanium nitride (TiN, CAS 25583-20-4) ceramic sputtering targets in 3N5 (99.95%) / 4N purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-SICHigh-density hot-pressed silicon carbide (SiC, CAS 409-21-2) ceramic sputtering targets in 4N (99.99%) / 4N5 purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-TMDHigh-density hot-pressed 2D Transition-Metal dichalcogenides (MoS2, WS2, MoSe2, WSe2) (MoS2 / WS2 / MoSe2 / WSe2, CAS 1317-33-5) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-ZNSHigh-density hot-pressed zinc sulfide & zinc selenide (ZnS, ZnSe) (ZnS / ZnSe, CAS 1314-98-3) ceramic sputtering targets in 4N5 (99.995%) / 5N CVD Optical Grade purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-EV-ALVacuum-degassed 5N (99.999%) / 5N5 aluminum (Al, CAS 7429-90-5) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-TIVacuum-degassed 4N5 (99.995%) / 5N (99.999%) titanium (Ti, CAS 7440-32-6) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-CRVacuum-degassed 4N (99.99%) / 4N5 (99.995%) chromium (Cr, CAS 7440-47-3) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-CUVacuum-degassed 5N (99.999%) / 6N OFHC copper (Cu, CAS 7440-50-8) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-NIVacuum-degassed 4N5 (99.995%) / 5N (99.999%) nickel (Ni, CAS 7440-02-0) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-AGVacuum-degassed 4N5 (99.995%) / 5N (99.999%) silver (Ag, CAS 7440-22-4) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-GEVacuum-degassed 5N (99.999%) / 6N Zone-Refined germanium (Ge, CAS 7440-56-4) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-SIOVacuum-degassed 4N (99.99%) Vacuum-Sublimed Grade silicon monoxide (SiO, CAS 10097-28-6) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-SIO2Vacuum-degassed 4N5 (99.995%) / 5N silicon dioxide (optical quartz) (SiO2, CAS 60676-86-0) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-MGF2Vacuum-degassed 4N5 (99.995%) Vacuum-Grown Crystal Optical Grade magnesium fluoride (MgF2, CAS 7783-40-6) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-TI3O5Vacuum-degassed 4N (99.99%) Pre-Reduced Spit-Free Optical Grade titanium Sub-Oxide (Ti3O5 & TiO2) (Ti3O5 / TiO2, CAS 12065-65-5) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-TA2O5Vacuum-degassed 4N (99.99%) / 4N5 Vacuum-Sintered tantalum pentoxide (Ta2O5, CAS 1314-61-0) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-HFO2Vacuum-degassed 4N (99.99% excl. Zr) / 4N5 Low-Zr Laser Grade hafnium dioxide (HfO2, CAS 12055-23-1) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-ZRO2Vacuum-degassed 4N (99.99%) Optical Grade (Pure or Y2O3/TiO2-Stabilized) zirconium dioxide (ZrO2, CAS 1314-23-4) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-AL2O3Vacuum-degassed 4N5 (99.995%) Crushed Single-Crystal Sapphire & Sintered Tablets aluminum oxide (sapphire granules) (Al2O3, CAS 1344-28-1) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-INSNVacuum-degassed 5N (99.999%) / 6N indium & tin (In / Sn, CAS 7440-74-6) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-ZNSVacuum-degassed 4N5 (99.995%) CVD Optical Grade zinc sulfide & zinc selenide (ZnS / ZnSe, CAS 1314-98-3) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-FLVacuum-degassed 4N5 (99.995%) Vacuum-Grown Optical Crystal Grade optical fluorides (LiF, CaF2, BaF2, YF3, LaF3) (LiF / CaF2 / BaF2 / YF3 / LaF3, CAS 7789-75-5) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-SUB-SIEpi-ready CMP-polished silicon wafers & thermal oxide (SiO2/Si) substrates (Si / SiO2-on-Si, CAS 7440-21-3) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
TB-SUB-SICEpi-ready CMP-polished Single-Crystal 4H-SiC & 6H-SiC wafers & substrates (SiC (4H / 6H), CAS 409-21-2) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
TB-SUB-MGOEpi-ready CMP-polished magnesium oxide (MgO) Single-Crystal substrates (MgO, CAS 1309-48-4) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
TB-SUB-STOEpi-ready CMP-polished strontium titanate (SrTiO3 & Nb:STO) Single-Crystal substrates (SrTiO3 / Nb:SrTiO3, CAS 12060-59-2) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
TB-SUB-LAOEpi-ready CMP-polished lanthanum aluminate (LaAlO3) Single-Crystal substrates (LaAlO3, CAS 12003-65-5) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
TB-SUB-YSZEpi-ready CMP-polished Yttria-Stabilized zirconia (YSZ) Single-Crystal substrates (ZrO2:Y2O3 (8–9.5 mol% Y2O3), CAS 1314-23-4) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
TB-SUB-LNOEpi-ready CMP-polished lithium niobate (LiNbO3) & lithium tantalate (LiTaO3) wafers (LiNbO3 / LiTaO3, CAS 12031-63-9) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
TB-SUB-GANEpi-ready CMP-polished GaN-on-Sapphire & AlN-on-Sapphire epi templates (GaN / AlN on α-Al2O3, CAS 25617-97-4) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
TB-SUB-SPNEpi-ready CMP-polished magnesium aluminate spinel (MgAl2O4) substrates & windows (MgAl2O4, CAS 1306-44-1) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
TB-SUB-QZCEpi-ready CMP-polished Single-Crystal quartz (AT-Cut, ST-Cut, X/Y/Z-Cut) substrates & windows (α-SiO2 (Single Crystal), CAS 14808-60-7) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
TB-SUB-CAF2Epi-ready CMP-polished CaF2, BaF2 & MgF2 UV / infrared crystal windows & substrates (CaF2 / BaF2 / MgF2, CAS 7789-75-5) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
TB-SUB-GLSEpi-ready CMP-polished borosilicate (borofloat 33), Alkali-Free display & FTO/ITO glass substrates (SiO2-B2O3-Al2O3 / ITO-Glass / FTO-Glass, CAS 65997-17-3) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
TB-W-CRUHigh-purity 3N5 (99.95%) / 4N (99.99%) CIP-Sintered, Forged, or Spun High-Purity tungsten (w) crucibles & sapphire growth vessels (W, CAS 7440-33-7) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
TB-W-RODHigh-purity 99.95% Pure W & Non-Radioactive Lanthanated (1.5–2% La2O3) / Ceriated (2% CeO2) pure & doped tungsten (w, WL15, WL20, WC20) rods & electrodes (W / W-La2O3 / W-CeO2 / W-Y2O3, CAS 7440-33-7) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
TB-W-SHHigh-purity 3N5 (99.95%) / 4N (99.99%) Warm/Cold-Rolled & Stress-Relieved High-Purity tungsten (w) foil, sheet, plate & evaporation ribbon (W, CAS 7440-33-7) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
TB-W-WRHigh-purity 99.95% Pure W, Potassium-Doped Non-Sag (AKS), & W-3%Re Ductile Grade pure & Potassium-Doped Non-Sag tungsten (w / AKS) wire & heater coils (W / AKS-Doped W / W3Re, CAS 7440-33-7) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
TB-MO-CRUHigh-purity 99.95% Pure Mo & Lanthanated ODS Mo-La (0.3–0.7 wt% La2O3) molybdenum & Mo-La (ODS) crucibles, sintering boats & trays (Mo / Mo-La2O3, CAS 7439-98-7) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
TB-MO-SHHigh-purity 3N5 (99.95%) / 4N (99.99%) Cross-Rolled & Annealed High-Purity molybdenum (mo) foil, sheet, plate & discs (Mo, CAS 7439-98-7) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
TB-MO-RODHigh-purity 99.95% Pure Molybdenum (ASTM B387 Type 361) molybdenum (mo) rods, bars, threaded studs, nuts & washers (Mo, CAS 7439-98-7) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
TB-MO-TZMHigh-purity ASTM B387 Type 364 (TZM Precipitation-Hardened Alloy) TZM molybdenum alloy (Mo-0.5Ti-0.08Zr) plate, rod & Hot-Zone tooling (Mo-0.5Ti-0.08Zr-0.02C, CAS 7439-98-7) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
TB-TA-CRUHigh-purity 3N5 (99.95%) / 4N (99.99%) Electron-Beam Melted (RO5200 / RO5400) High-Purity tantalum (ta) crucibles, boats & chemical liners (Ta, CAS 7440-25-7) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
TB-TA-SHHigh-purity 3N5 (99.95%) / 4N (99.99%) Annealed Ductile Grade High-Purity tantalum (ta) foil, sheet, rod, wire & capillary tubing (Ta, CAS 7440-25-7) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
TB-NB-SHHigh-purity 3N5 (99.95% Type 1/2) & High-RRR 30–300 Superconducting Electron-Beam Grade High-Purity & superconducting RRR niobium (nb) foil, sheet, rod & tube (Nb, CAS 7440-03-1) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
TB-TI-MLHigh-purity 4N (99.99%) Research Grade, CP Grade 1/2 (ASTM B265/B348), & Grade 5 (Ti-6Al-4V) High-Purity titanium (4N) & grade 1 / 2 / 5 (Ti-6Al-4V) foil, sheet, rod & mesh (Ti / Ti-6Al-4V, CAS 7440-32-6) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
TB-ZR-MLHigh-purity ASTM B551 Zr 702 (99.2% Zr+Hf) & Low-Hafnium 3N5 (<100 ppm Hf) Research Grade zirconium (zr 702 & Low-Hf 3N5) crucibles, foil, sheet, rod & wire (Zr, CAS 7440-67-7) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
TB-NI-MLHigh-purity 4N (99.99%) / 5N Research Grade & Low-Carbon Nickel 201 (UNS N02201) High-Purity nickel (3N–5N & ni 200/201) crucibles, foil, sheet, wire & mesh (Ni, CAS 7440-02-0) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
TB-WRE-TCHigh-purity Matched EMF Calibration Grade (ASTM E988 / IEC 60584 Type C & Type D) Tungsten-Rhenium thermocouple wire (type c, type d & type g) & probes (W5Re / W26Re & W3Re / W25Re, CAS 7440-15-5) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
TB-W-CUHigh-purity Vacuum Cu-Infiltrated Composite (Zero Open Porosity, Hermetic) Tungsten-Copper (WCu) & Molybdenum-Copper (MoCu) thermal submounts & electrodes (WCu (90/10, 80/20, 75/25) & MoCu (85/15, 70/30), CAS 7440-33-7) engineered for ultra-high-temperature vacuum furnaces, crystal growth, semiconductor processing, and corrosive environments.
TB-MGO-CRHigh-purity sintered magnesia (MgO, CAS 1309-48-4) crucibles and setter plates engineered for superalloy vacuum induction melting, beta-alumina/PZT sintering, and molten metal processing up to 2,200 °C.
TB-ZTA-CMDispersion-strengthened Zirconia-Toughened Alumina (ZTA) structural ceramics combining alumina's extreme hardness (1,650 HV) with zirconia's transformation-toughened fracture resistance (6–8 MPa·m½).
TB-POR-CKPrecision-planarity microporous alumina and silicon carbide ceramic plates (1–100 µm pore size) for semiconductor wafer vacuum chucks, air bearings, and high-temperature filtration.
TB-TIB2-CMElectrically conductive hot-pressed titanium diboride (TiB2, CAS 12045-63-5) plates and composite TiB2-BN-AlN resistive evaporation boats for continuous aluminum web/batch PVD and molten metal contact.
TB-AL2O3-MBExtruded 99.7% high-purity alumina 2-bore, 4-bore, and 6-bore capillary insulator rods and beads for Type R, S, B, K, and C high-temperature thermocouples and UHV feedthroughs.
TB-SIO2-BKSemiconductor-grade 99.995% clear fused quartz beakers, rectangular wafer wet-bench tanks, and flanged vacuum bell jars with sub-ppm metallic leaching and extreme thermal-shock immunity.
TB-SIO2-CVDirect thermally fused (adhesive-free) JGS1 UV-VIS-NIR quartz spectrophotometer and fluorometer cuvettes with >80% transmission from 190 nm to 2,500 nm and matched pair transmission within ≤0.5%.
TB-SIO2-FRSintered porous fused quartz fritted discs (porosities G0–G5, 2–250 µm), precision centerless-ground quartz rods, and micro-capillary tubing for plug-flow catalyst reactors and gas sparging.
TB-GR-SICCTE-matched purified isostatic graphite susceptors encapsulated in dense 6N CVD β-SiC or tantalum carbide (TaC) coatings for GaN MOCVD, SiC CVD epitaxy, and 2,200 °C PVT crystal growth.
TB-CFC-PLHigh-strength 2D/2.5D carbon-fiber-reinforced carbon (C/C, CFC) composite structural plates, charging grids, hot-press sleeves, and M6–M24 threaded fasteners for vacuum furnaces up to 2,500 °C.
TB-GR-CRUPrecision-machined high-purity isostatic graphite melting crucibles, clay-free analytical fusion capsules, and continuous casting dies for precious metals, copper alloys, silicon, and crystal growth.
TB-GR-FLBinder-free exfoliated flexible graphite foil (0.05–3.0 mm) for Spark Plasma Sintering (SPS) die/punch release liners, high-temperature vacuum gaskets, and anisotropic heat spreaders.
TB-BAT-CCCleanroom ultrasonic-cleaned 316L and 304 stainless-steel CR2032/CR2025/CR2016 coin-cell cases, PP-gasketed caps, spacer discs, wave springs, and Al-clad high-voltage positive cans.
TB-BAT-FLElectrodeposition and rolled battery-grade copper foil (6–25 µm), aluminum foil (12–25 µm), and 1 µm conductive-carbon-coated Al/Cu current collectors for Li-ion, Na-ion, and supercapacitor doctor-blade coating.
TB-EC-GDLGraphitized carbon fiber paper, woven carbon cloth, and PTFE/microporous-layer (MPL) coated Gas Diffusion Layers (GDL) for PEM fuel cells, CO2/N2 electroreduction, and redox flow batteries.
TB-MIL-WCMatched planetary ball-mill grinding jars and milling balls in Tungsten Carbide (WC-Co), Natural Brazilian Agate, 99.5% Alumina, Silicon Nitride, PTFE, and 316L Stainless Steel (50 mL to 1,000 mL).
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