PVD research and production materials including 3N–5N metal and ceramic oxide sputtering targets (ITO, ZnO, Al2O3), thermal and e-beam evaporation pellets, Cu/C/Mo/W pocket crucible liners, refractory evaporation boats, and 6 MHz QCM crystals.
Compare SKU codes, chemical formulas, CAS numbers, purity grades, and standard dimensional envelopes.
| SKU | Product Line | Formula | CAS # | Purity / Grade | Typical Dimensions | RFQ |
|---|---|---|---|---|---|---|
| TB-PVD-MT | Metal Sputtering Targets | Ti / Cr / Al / Cu / Ni / W / Mo / Ta | 7440-32-6 | 3N5 (99.95%) / 4N (99.99%) / 4N5 / 5N (99.999%) | Ø 1", 2", 3", 4", 6", 8" × Thickness 1–12.7 mm; Rectangular plates | Quote ↗ |
| TB-PVD-OX | Oxide & Nitride Ceramic Sputtering Targets | ITO / ZnO / Al2O3 / SiO2 / TiO2 / AlN / SiC | 50926-11-9 | 99.9% (3N) / 99.99% (4N) / 99.995% (4N5) | Ø 1", 2", 3", 4", 6" × Thickness 2–6 mm (+ Cu Backing Plate) | Quote ↗ |
| TB-PVD-EV | Evaporation Materials | Al / Cu / Ti / Cr / Ni / Ge / SiO2 / MgF2 / TiO2 | 7429-90-5 | 4N (99.99%) / 4N5 / 5N (99.999%) Vacuum-Degassed | 1–3 mm & 3–6 mm granules/shots, Ø 3×3 or 6×6 mm pellets, starter sources | Quote ↗ |
| TB-PVD-LN | E-Beam Evaporation Crucible Pocket Liners | Cu / C (Graphite & Vitreous) / Mo / W / Al2O3 / BN | 7440-50-8 | OFHC Cu (99.99%), Purified Graphite/Vitreous C (<20 ppm), 99.95% Mo/W | 2 cc, 4 cc, 7 cc, 8 cc, 15 cc, 25 cc, 30 cc, 40 cc, & 100 cc | Quote ↗ |
| TB-PVD-BT | Tungsten, Molybdenum & Tantalum Evaporation Boats | W / Mo / Ta | 7440-33-7 | ≥99.95% W, Mo, & Ta Vacuum-Grade Refractory Sheet/Wire | Lengths 50–150 mm × Thickness 0.005"–0.020" (0.127–0.50 mm); Wire baskets | Quote ↗ |
| TB-PVD-QCM | QCM Thin-Film Deposition Monitor Crystals | α-SiO2 + Au / Ag-Al Alloy Electrodes | 14808-60-7 | AT-Cut Piezoelectric Quartz (6.0 MHz & 5.0 MHz Fundamental) | Ø 13.97 mm (0.550") Plano-Convex Standard Sensor Discs | Quote ↗ |
| TB-PVD-TI | Titanium (Ti) Sputtering Targets | Ti | 7440-32-6 | 4N (99.99%) / 4N5 (99.995%) / 5N | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-CR | Chromium (Cr) Sputtering Targets | Cr | 7440-47-3 | 3N5 (99.95%) / 4N (99.99%) / 4N5 | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-AL | Aluminum (Al) Sputtering Targets | Al | 7429-90-5 | 4N (99.99%) / 5N (99.999%) / 5N5 | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-CU | Copper (Cu) Sputtering Targets | Cu | 7440-50-8 | 4N5 (99.995%) / 5N (99.999%) / 6N OFHC | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-NI | Nickel (Ni) Sputtering Targets | Ni | 7440-02-0 | 4N (99.99%) / 4N5 (99.995%) / 5N | Ø 1", 2", 3", 4" × 1.0–2.0 mm (thin magnetic pass-through) or 3–6 mm | Quote ↗ |
| TB-PVD-W | Tungsten (W) Sputtering Targets | W | 7440-33-7 | 3N5 (99.95%) / 4N (99.99%) / 5N | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-MO | Molybdenum (Mo) Sputtering Targets | Mo | 7439-98-7 | 3N5 (99.95%) / 4N (99.99%) / 4N5 | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-TA | Tantalum (Ta) Sputtering Targets | Ta | 7440-25-7 | 3N5 (99.95%) / 4N (99.99%) / 4N5 | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-NB | Niobium (Nb) Sputtering Targets | Nb | 7440-03-1 | 3N5 (99.95%) / 4N (99.99%) / High-RRR 4N5 | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-SI | Silicon (Si) Sputtering Targets | Si | 7440-21-3 | 5N (99.999%) / 6N Intrinsic, B-doped (p-type), or P-doped (n-type) | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-GE | Germanium (Ge) Sputtering Targets | Ge | 7440-56-4 | 5N (99.999%) / 6N (99.9999%) Intrinsic or Ga/Sb-Doped | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-V | Vanadium (V) Sputtering Targets | V | 7440-62-2 | 3N5 (99.95%) / 4N (99.99%) | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-ZR | Zirconium (Zr) Sputtering Targets | Zr | 7440-67-7 | 3N5 (99.95% Grade 702) / 4N Low-Hf (<100 ppm Hf) | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-HF | Hafnium (Hf) Sputtering Targets | Hf | 7440-58-6 | 3N5 (99.95% excl. Zr) / 4N Low-Zr | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-CO | Cobalt (Co) Sputtering Targets | Co | 7440-48-4 | 3N5 (99.95%) / 4N (99.99%) / 4N5 | Ø 1", 2", 3", 4" × 1.0–2.0 mm (thin magnetic pass-through) or 3–6 mm | Quote ↗ |
| TB-PVD-FE | Iron (Fe) Sputtering Targets | Fe | 7439-89-6 | 3N5 (99.95%) / 4N (99.99%) / 4N5 | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-MN | Manganese (Mn) Sputtering Targets | Mn | 7439-96-5 | 3N5 (99.95%) / 4N (99.99%) | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-ZN | Zinc (Zn) Sputtering Targets | Zn | 7440-66-6 | 4N (99.99%) / 4N5 (99.995%) / 5N | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-SN | Tin (Sn) Sputtering Targets | Sn | 7440-31-5 | 4N (99.99%) / 4N5 / 5N (99.999%) | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-IN | Indium (In) Sputtering Targets | In | 7440-74-6 | 4N5 (99.995%) / 5N (99.999%) / 6N | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-BI | Bismuth (Bi) Sputtering Targets | Bi | 7440-69-9 | 4N (99.99%) / 4N5 / 5N (99.999%) | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-SB | Antimony (Sb) Sputtering Targets | Sb | 7440-36-0 | 4N (99.99%) / 4N5 / 5N (99.999%) | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-TE | Tellurium (Te) Sputtering Targets | Te | 13494-80-9 | 4N (99.99%) / 4N5 / 5N (99.999%) | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-Y | Yttrium (Y) Sputtering Targets | Y | 7440-65-5 | 3N (99.9%) / 3N5 (99.95% REM) | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-SC | Scandium (Sc) Sputtering Targets | Sc | 7440-20-2 | 3N5 (99.95%) / 4N (99.99% REM) | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-RE | Rare-Earth Metal (La, Ce, Gd, Nd, Er, Yb) (La / Ce / Gd / Nd / Er / Yb) Sputtering Targets | La / Ce / Gd / Nd / Er / Yb | 7439-91-0 | 3N (99.9%) / 3N5 (99.95%) / 4N (REM basis) | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-AG | Silver (Ag) Sputtering Targets | Ag | 7440-22-4 | 4N (99.99%) / 4N5 (99.995%) / 5N | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-TIW | Titanium-Tungsten (TiW 10/90) (TiW (10:90 wt% / 30:70 at.%)) Sputtering Targets | TiW (10:90 wt% / 30:70 at.%) | 7440-33-7 | 3N5 (99.95%) / 4N Low-Alkali Semiconductor Grade | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-NICR | Nickel-Chromium (NiCr 80/20) (NiCr (80:20 / 60:40 / 50:50 wt%)) Sputtering Targets | NiCr (80:20 / 60:40 / 50:50 wt%) | 11106-97-1 | 3N5 (99.95%) / 4N | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-NIFE | Permalloy (Ni80Fe20 & CoFeB) (Ni80Fe20 / Ni81Fe19 / Co40Fe40B20) Sputtering Targets | Ni80Fe20 / Ni81Fe19 / Co40Fe40B20 | 12168-54-6 | 3N5 (99.95%) / 4N Vacuum-Induction Melted | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-ALSC | Aluminum-Scandium (AlSc Alloy) (Al1-xScx (Sc 5–43 at.%)) Sputtering Targets | Al1-xScx (Sc 5–43 at.%) | 60683-64-9 | 4N (99.99%) Vacuum-Melted / HIP Intermetallic | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-CIGS | Copper-Gallium & CIGS Alloy (CuGa (70:30 / 75:25) & CuInGaSe2) Sputtering Targets | CuGa (70:30 / 75:25) & CuInGaSe2 | 57606-41-4 | 4N (99.99%) / 4N5 | Ø 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular | Quote ↗ |
| TB-PVD-ITO | Indium Tin Oxide (In2O3:SnO2 (90:10 wt%)) Sputtering Targets | In2O3:SnO2 (90:10 wt%) | 50926-11-9 | 4N (99.99%) · ≥99.5% Relative Density | Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) | Quote ↗ |
| TB-PVD-AZO | Aluminum-Doped Zinc Oxide (AZO) (ZnO:Al2O3 (98:2 wt%)) Sputtering Targets | ZnO:Al2O3 (98:2 wt%) | 1314-13-2 | 4N (99.99%) | Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) | Quote ↗ |
| TB-PVD-ZNO | Zinc Oxide (ZnO) Sputtering Targets | ZnO | 1314-13-2 | 4N (99.99%) / 4N5 / 5N | Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) | Quote ↗ |
| TB-PVD-ALO | Aluminum Oxide (Alumina) (Al2O3) Sputtering Targets | Al2O3 | 1344-28-1 | 4N (99.99%) / 4N5 | Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) | Quote ↗ |
| TB-PVD-SIO2 | Silicon Dioxide (Fused Quartz) (SiO2) Sputtering Targets | SiO2 | 60676-86-0 | 4N5 (99.995%) / 5N (99.999%) | Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) | Quote ↗ |
| TB-PVD-TIO2 | Titanium Dioxide (TiO2 / TiO2-x) Sputtering Targets | TiO2 / TiO2-x | 13463-67-7 | 4N (99.99%) | Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) | Quote ↗ |
| TB-PVD-TA2O5 | Tantalum Pentoxide (Ta2O5) Sputtering Targets | Ta2O5 | 1314-61-0 | 4N (99.99%) / 4N5 (99.995%) | Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) | Quote ↗ |
| TB-PVD-NB2O5 | Niobium Pentoxide (Nb2O5) Sputtering Targets | Nb2O5 | 1313-96-8 | 4N (99.99%) / 4N5 | Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) | Quote ↗ |
| TB-PVD-HFO2 | Hafnium Dioxide (Hafnia) (HfO2) Sputtering Targets | HfO2 | 12055-23-1 | 4N (99.99% excl. Zr) / Low-Zr 4N | Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) | Quote ↗ |
| TB-PVD-ZRO2 | Zirconium Dioxide & YSZ (ZrO2 / 8 mol% Y2O3-ZrO2) Sputtering Targets | ZrO2 / 8 mol% Y2O3-ZrO2 | 1314-23-4 | 4N (99.99%) | Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) | Quote ↗ |
| TB-PVD-WO3 | Tungsten Trioxide (WO3) Sputtering Targets | WO3 | 1314-35-8 | 4N (99.99%) | Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) | Quote ↗ |
| TB-PVD-MOO3 | Molybdenum Trioxide (MoO3) Sputtering Targets | MoO3 | 1313-27-5 | 4N (99.99%) | Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) | Quote ↗ |
| TB-PVD-NIO | Nickel Oxide (NiO (or Li-doped NiOx)) Sputtering Targets | NiO (or Li-doped NiOx) | 1313-99-1 | 4N (99.99%) | Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) | Quote ↗ |
| TB-PVD-SNO2 | Tin Dioxide & Antimony/Fluorine Doped (SnO2 / ATO (SnO2:Sb2O3)) Sputtering Targets | SnO2 / ATO (SnO2:Sb2O3) | 18282-10-5 | 4N (99.99%) | Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) | Quote ↗ |
| TB-PVD-IGZO | Indium Gallium Zinc Oxide (IGZO) (InGaZnO4 (In:Ga:Zn = 1:1:1 at.%)) Sputtering Targets | InGaZnO4 (In:Ga:Zn = 1:1:1 at.%) | Composition dependent; confirm supplier SDS | 4N (99.99%) · High-Density Conductive Ceramic | Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) | Quote ↗ |
| TB-PVD-BST | Barium Titanate & Barium Strontium Titanate (BaTiO3 / Ba1-xSrxTiO3 (BST)) Sputtering Targets | BaTiO3 / Ba1-xSrxTiO3 (BST) | 12047-27-7 | 3N5 (99.95%) / 4N | Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) | Quote ↗ |
| TB-PVD-PZT | Lead Zirconate Titanate (PZT 52/48) (Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO)) Sputtering Targets | Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO) | 12626-81-2 | 3N5 (99.95%) | Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) | Quote ↗ |
| TB-PVD-LIB | Solid-State Battery Targets (LiCoO2, Li3PO4, LLZO) (LiCoO2 / Li3PO4 / LiMn2O4 / Li4Ti5O12 / LLZO) Sputtering Targets | LiCoO2 / Li3PO4 / LiMn2O4 / Li4Ti5O12 / LLZO | 12190-79-3 | 3N5 (99.95%) / 4N (with optional 10–15% Li excess) | Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) | Quote ↗ |
| TB-PVD-ALN | Aluminum Nitride (AlN) Sputtering Targets | AlN | 24304-00-5 | 3N5 (99.95%) / 4N | Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) | Quote ↗ |
| TB-PVD-SI3N4 | Silicon Nitride (Si3N4) Sputtering Targets | Si3N4 | 12033-89-5 | 4N (99.99%) | Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) | Quote ↗ |
| TB-PVD-TIN | Titanium Nitride (TiN) Sputtering Targets | TiN | 25583-20-4 | 3N5 (99.95%) / 4N | Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) | Quote ↗ |
| TB-PVD-SIC | Silicon Carbide (SiC) Sputtering Targets | SiC | 409-21-2 | 4N (99.99%) / 4N5 | Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) | Quote ↗ |
| TB-PVD-TMD | 2D Transition-Metal Dichalcogenides (MoS2, WS2, MoSe2, WSe2) (MoS2 / WS2 / MoSe2 / WSe2) Sputtering Targets | MoS2 / WS2 / MoSe2 / WSe2 | 1317-33-5 | 4N (99.99%) | Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) | Quote ↗ |
| TB-PVD-ZNS | Zinc Sulfide & Zinc Selenide (ZnS, ZnSe) (ZnS / ZnSe) Sputtering Targets | ZnS / ZnSe | 1314-98-3 | 4N5 (99.995%) / 5N CVD Optical Grade | Ø 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate) | Quote ↗ |
| TB-EV-AL | Aluminum (Al) Evaporation Materials | Al | 7429-90-5 | 5N (99.999%) / 5N5 | Ø 3×3 mm, Ø 6×6 mm, Ø 6×12 mm slugs; Ø 1–2 mm wire clips | Quote ↗ |
| TB-EV-TI | Titanium (Ti) Evaporation Materials | Ti | 7440-32-6 | 4N5 (99.995%) / 5N (99.999%) | Ø 3×3 mm & Ø 6×6 mm vacuum-degassed slugs; pre-melted hearth starter cones | Quote ↗ |
| TB-EV-CR | Chromium (Cr) Evaporation Materials | Cr | 7440-47-3 | 4N (99.99%) / 4N5 (99.995%) | 1–3 mm & 2–5 mm degassed chunks/granules; Cr-plated W evaporation rods | Quote ↗ |
| TB-EV-CU | Copper (Cu) Evaporation Materials | Cu | 7440-50-8 | 5N (99.999%) / 6N OFHC | Ø 3×3 mm & Ø 6×6 mm oxygen-free cylindrical slugs; 2–5 mm shot | Quote ↗ |
| TB-EV-NI | Nickel (Ni) Evaporation Materials | Ni | 7440-02-0 | 4N5 (99.995%) / 5N (99.999%) | Ø 3×3 mm & Ø 6×6 mm vacuum-degassed slugs | Quote ↗ |
| TB-EV-AG | Silver (Ag) Evaporation Materials | Ag | 7440-22-4 | 4N5 (99.995%) / 5N (99.999%) | Ø 3×3 mm & Ø 6×6 mm slugs; 1–3 mm vacuum-melted shot | Quote ↗ |
| TB-EV-GE | Germanium (Ge) Evaporation Materials | Ge | 7440-56-4 | 5N (99.999%) / 6N Zone-Refined | 1–4 mm & 3–6 mm crystalline pieces; pre-melted hearth slugs | Quote ↗ |
| TB-EV-SIO | Silicon Monoxide (SiO) Evaporation Materials | SiO | 10097-28-6 | 4N (99.99%) Vacuum-Sublimed Grade | 2–6 mm dark brown/black vacuum-degassed chunks & granules | Quote ↗ |
| TB-EV-SIO2 | Silicon Dioxide (Optical Quartz) (SiO2) Evaporation Materials | SiO2 | 60676-86-0 | 4N5 (99.995%) / 5N | 1–3 mm & 2–5 mm crystal-clear fused quartz granules; e-beam starter discs | Quote ↗ |
| TB-EV-MGF2 | Magnesium Fluoride (MgF2) Evaporation Materials | MgF2 | 7783-40-6 | 4N5 (99.995%) Vacuum-Grown Crystal Optical Grade | 1–3 mm & 2–4 mm vacuum-melted crystalline granules | Quote ↗ |
| TB-EV-TI3O5 | Titanium Sub-Oxide (Ti3O5 & TiO2) (Ti3O5 / TiO2) Evaporation Materials | Ti3O5 / TiO2 | 12065-65-5 | 4N (99.99%) Pre-Reduced Spit-Free Optical Grade | 1–3 mm & 2–4 mm black sintered granules; Ø 10–20 mm vacuum-sintered tablets | Quote ↗ |
| TB-EV-TA2O5 | Tantalum Pentoxide (Ta2O5) Evaporation Materials | Ta2O5 | 1314-61-0 | 4N (99.99%) / 4N5 Vacuum-Sintered | 1–3 mm & 2–4 mm sintered granules & tablets (white or pre-reduced dark grade) | Quote ↗ |
| TB-EV-HFO2 | Hafnium Dioxide (HfO2) Evaporation Materials | HfO2 | 12055-23-1 | 4N (99.99% excl. Zr) / 4N5 Low-Zr Laser Grade | 1–3 mm & 1–4 mm high-density sintered granules and tablets | Quote ↗ |
| TB-EV-ZRO2 | Zirconium Dioxide (ZrO2) Evaporation Materials | ZrO2 | 1314-23-4 | 4N (99.99%) Optical Grade (Pure or Y2O3/TiO2-Stabilized) | 1–4 mm sintered granules and tablets | Quote ↗ |
| TB-EV-AL2O3 | Aluminum Oxide (Sapphire Granules) (Al2O3) Evaporation Materials | Al2O3 | 1344-28-1 | 4N5 (99.995%) Crushed Single-Crystal Sapphire & Sintered Tablets | 1–3 mm & 2–5 mm crushed crystal sapphire granules; sintered e-beam tablets | Quote ↗ |
| TB-EV-INSN | Indium & Tin (In / Sn) Evaporation Materials | In / Sn | 7440-74-6 | 5N (99.999%) / 6N | Ø 3×3 mm & Ø 6×6 mm high-purity pellets and shot | Quote ↗ |
| TB-EV-ZNS | Zinc Sulfide & Zinc Selenide (ZnS / ZnSe) Evaporation Materials | ZnS / ZnSe | 1314-98-3 | 4N5 (99.995%) CVD Optical Grade | 1–4 mm CVD crystalline chunks & sintered pellets | Quote ↗ |
| TB-EV-FL | Optical Fluorides (LiF, CaF2, BaF2, YF3, LaF3) (LiF / CaF2 / BaF2 / YF3 / LaF3) Evaporation Materials | LiF / CaF2 / BaF2 / YF3 / LaF3 | 7789-75-5 | 4N5 (99.995%) Vacuum-Grown Optical Crystal Grade | 1–3 mm & 2–4 mm crystalline granules (ultra-low moisture) | Quote ↗ |
TB-PVD-MTVacuum-melted and thermomechanically forged pure metal and custom alloy planar sputtering targets (3N5–5N) sized for research and production magnetron cathodes.
TB-PVD-OXHigh-density hot-pressed and HIP-consolidated oxide, nitride, carbide, and sulfide ceramic sputtering targets (ITO, AZO, ZnO, Al2O3, SiO2, TiO2, BaTiO3) indium-bonded for arc-free RF/pulsed-DC PVD.
TB-PVD-EVVacuum-degassed 4N–5N metal evaporation slugs/shots and optical dielectric granules (SiO2, Ti3O5, MgF2, Al2O3) engineered for spit-free e-beam and thermal PVD.
TB-PVD-LNPrecision-tapered e-beam gun hearth liners in OFHC copper, purified & impermeable graphite, vitreous carbon, molybdenum, tungsten, alumina, and h-BN.
TB-PVD-BT99.95% pure tungsten, molybdenum, and tantalum resistive thermal evaporation boats, baffled box sources, and stranded tungsten wire baskets/coils.
TB-PVD-QCMPrecision 6.0 MHz and 5.0 MHz AT-cut plano-convex quartz crystal microbalance (QCM) thickness monitor sensors with gold or stress-relieving alloy electrodes in cleanroom dispenser packs.
TB-PVD-TIVacuum-melted high-purity titanium (Ti, CAS 7440-32-6) planar magnetron sputtering targets in 4N (99.99%) / 4N5 (99.995%) / 5N grades for semiconductor, optical, and research PVD.
TB-PVD-CRVacuum-melted high-purity chromium (Cr, CAS 7440-47-3) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 4N5 grades for semiconductor, optical, and research PVD.
TB-PVD-ALVacuum-melted high-purity aluminum (Al, CAS 7429-90-5) planar magnetron sputtering targets in 4N (99.99%) / 5N (99.999%) / 5N5 grades for semiconductor, optical, and research PVD.
TB-PVD-CUVacuum-melted high-purity copper (Cu, CAS 7440-50-8) planar magnetron sputtering targets in 4N5 (99.995%) / 5N (99.999%) / 6N OFHC grades for semiconductor, optical, and research PVD.
TB-PVD-NIVacuum-melted high-purity nickel (Ni, CAS 7440-02-0) planar magnetron sputtering targets in 4N (99.99%) / 4N5 (99.995%) / 5N grades for semiconductor, optical, and research PVD.
TB-PVD-WVacuum-melted high-purity tungsten (W, CAS 7440-33-7) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 5N grades for semiconductor, optical, and research PVD.
TB-PVD-MOVacuum-melted high-purity molybdenum (Mo, CAS 7439-98-7) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 4N5 grades for semiconductor, optical, and research PVD.
TB-PVD-TAVacuum-melted high-purity tantalum (Ta, CAS 7440-25-7) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 4N5 grades for semiconductor, optical, and research PVD.
TB-PVD-NBVacuum-melted high-purity niobium (Nb, CAS 7440-03-1) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / High-RRR 4N5 grades for semiconductor, optical, and research PVD.
TB-PVD-SIVacuum-melted high-purity silicon (Si, CAS 7440-21-3) planar magnetron sputtering targets in 5N (99.999%) / 6N Intrinsic, B-doped (p-type), or P-doped (n-type) grades for semiconductor, optical, and research PVD.
TB-PVD-GEVacuum-melted high-purity germanium (Ge, CAS 7440-56-4) planar magnetron sputtering targets in 5N (99.999%) / 6N (99.9999%) Intrinsic or Ga/Sb-Doped grades for semiconductor, optical, and research PVD.
TB-PVD-VVacuum-melted high-purity vanadium (V, CAS 7440-62-2) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) grades for semiconductor, optical, and research PVD.
TB-PVD-ZRVacuum-melted high-purity zirconium (Zr, CAS 7440-67-7) planar magnetron sputtering targets in 3N5 (99.95% Grade 702) / 4N Low-Hf (<100 ppm Hf) grades for semiconductor, optical, and research PVD.
TB-PVD-HFVacuum-melted high-purity hafnium (Hf, CAS 7440-58-6) planar magnetron sputtering targets in 3N5 (99.95% excl. Zr) / 4N Low-Zr grades for semiconductor, optical, and research PVD.
TB-PVD-COVacuum-melted high-purity cobalt (Co, CAS 7440-48-4) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 4N5 grades for semiconductor, optical, and research PVD.
TB-PVD-FEVacuum-melted high-purity iron (Fe, CAS 7439-89-6) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 4N5 grades for semiconductor, optical, and research PVD.
TB-PVD-MNVacuum-melted high-purity manganese (Mn, CAS 7439-96-5) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) grades for semiconductor, optical, and research PVD.
TB-PVD-ZNVacuum-melted high-purity zinc (Zn, CAS 7440-66-6) planar magnetron sputtering targets in 4N (99.99%) / 4N5 (99.995%) / 5N grades for semiconductor, optical, and research PVD.
TB-PVD-SNVacuum-melted high-purity tin (Sn, CAS 7440-31-5) planar magnetron sputtering targets in 4N (99.99%) / 4N5 / 5N (99.999%) grades for semiconductor, optical, and research PVD.
TB-PVD-INVacuum-melted high-purity indium (In, CAS 7440-74-6) planar magnetron sputtering targets in 4N5 (99.995%) / 5N (99.999%) / 6N grades for semiconductor, optical, and research PVD.
TB-PVD-BIVacuum-melted high-purity bismuth (Bi, CAS 7440-69-9) planar magnetron sputtering targets in 4N (99.99%) / 4N5 / 5N (99.999%) grades for semiconductor, optical, and research PVD.
TB-PVD-SBVacuum-melted high-purity antimony (Sb, CAS 7440-36-0) planar magnetron sputtering targets in 4N (99.99%) / 4N5 / 5N (99.999%) grades for semiconductor, optical, and research PVD.
TB-PVD-TEVacuum-melted high-purity tellurium (Te, CAS 13494-80-9) planar magnetron sputtering targets in 4N (99.99%) / 4N5 / 5N (99.999%) grades for semiconductor, optical, and research PVD.
TB-PVD-YVacuum-melted high-purity yttrium (Y, CAS 7440-65-5) planar magnetron sputtering targets in 3N (99.9%) / 3N5 (99.95% REM) grades for semiconductor, optical, and research PVD.
TB-PVD-SCVacuum-melted high-purity scandium (Sc, CAS 7440-20-2) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99% REM) grades for semiconductor, optical, and research PVD.
TB-PVD-REVacuum-melted high-purity Rare-Earth metal (la, ce, gd, nd, er, yb) (La / Ce / Gd / Nd / Er / Yb, CAS 7439-91-0) planar magnetron sputtering targets in 3N (99.9%) / 3N5 (99.95%) / 4N (REM basis) grades for semiconductor, optical, and research PVD.
TB-PVD-AGVacuum-melted high-purity silver (Ag, CAS 7440-22-4) planar magnetron sputtering targets in 4N (99.99%) / 4N5 (99.995%) / 5N grades for semiconductor, optical, and research PVD.
TB-PVD-TIWVacuum-melted high-purity Titanium-Tungsten (TiW 10/90) (TiW (10:90 wt% / 30:70 at.%), CAS 7440-33-7) planar magnetron sputtering targets in 3N5 (99.95%) / 4N Low-Alkali Semiconductor Grade grades for semiconductor, optical, and research PVD.
TB-PVD-NICRVacuum-melted high-purity Nickel-Chromium (NiCr 80/20) (NiCr (80:20 / 60:40 / 50:50 wt%), CAS 11106-97-1) planar magnetron sputtering targets in 3N5 (99.95%) / 4N grades for semiconductor, optical, and research PVD.
TB-PVD-NIFEVacuum-melted high-purity permalloy (Ni80Fe20 & CoFeB) (Ni80Fe20 / Ni81Fe19 / Co40Fe40B20, CAS 12168-54-6) planar magnetron sputtering targets in 3N5 (99.95%) / 4N Vacuum-Induction Melted grades for semiconductor, optical, and research PVD.
TB-PVD-ALSCVacuum-melted high-purity Aluminum-Scandium (AlSc alloy) (Al1-xScx (Sc 5–43 at.%), CAS 60683-64-9) planar magnetron sputtering targets in 4N (99.99%) Vacuum-Melted / HIP Intermetallic grades for semiconductor, optical, and research PVD.
TB-PVD-CIGSVacuum-melted high-purity Copper-Gallium & CIGS alloy (CuGa (70:30 / 75:25) & CuInGaSe2, CAS 57606-41-4) planar magnetron sputtering targets in 4N (99.99%) / 4N5 grades for semiconductor, optical, and research PVD.
TB-PVD-ITOHigh-density hot-pressed indium tin oxide (In2O3:SnO2 (90:10 wt%), CAS 50926-11-9) ceramic sputtering targets in 4N (99.99%) · ≥99.5% Relative Density purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-AZOHigh-density hot-pressed Aluminum-Doped zinc oxide (AZO) (ZnO:Al2O3 (98:2 wt%), CAS 1314-13-2) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-ZNOHigh-density hot-pressed zinc oxide (ZnO, CAS 1314-13-2) ceramic sputtering targets in 4N (99.99%) / 4N5 / 5N purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-ALOHigh-density hot-pressed aluminum oxide (alumina) (Al2O3, CAS 1344-28-1) ceramic sputtering targets in 4N (99.99%) / 4N5 purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-SIO2High-density hot-pressed silicon dioxide (fused quartz) (SiO2, CAS 60676-86-0) ceramic sputtering targets in 4N5 (99.995%) / 5N (99.999%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-TIO2High-density hot-pressed titanium dioxide (TiO2 / TiO2-x, CAS 13463-67-7) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-TA2O5High-density hot-pressed tantalum pentoxide (Ta2O5, CAS 1314-61-0) ceramic sputtering targets in 4N (99.99%) / 4N5 (99.995%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-NB2O5High-density hot-pressed niobium pentoxide (Nb2O5, CAS 1313-96-8) ceramic sputtering targets in 4N (99.99%) / 4N5 purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-HFO2High-density hot-pressed hafnium dioxide (hafnia) (HfO2, CAS 12055-23-1) ceramic sputtering targets in 4N (99.99% excl. Zr) / Low-Zr 4N purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-ZRO2High-density hot-pressed zirconium dioxide & YSZ (ZrO2 / 8 mol% Y2O3-ZrO2, CAS 1314-23-4) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-WO3High-density hot-pressed tungsten trioxide (WO3, CAS 1314-35-8) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-MOO3High-density hot-pressed molybdenum trioxide (MoO3, CAS 1313-27-5) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-NIOHigh-density hot-pressed nickel oxide (NiO (or Li-doped NiOx), CAS 1313-99-1) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-SNO2High-density hot-pressed tin dioxide & Antimony/Fluorine doped (SnO2 / ATO (SnO2:Sb2O3), CAS 18282-10-5) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-IGZOHigh-density hot-pressed indium gallium zinc oxide (IGZO) (InGaZnO4 (In:Ga:Zn = 1:1:1 at.%), CAS Composition dependent; confirm supplier SDS) ceramic sputtering targets in 4N (99.99%) · High-Density Conductive Ceramic purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-BSTHigh-density hot-pressed barium titanate & barium strontium titanate (BaTiO3 / Ba1-xSrxTiO3 (BST), CAS 12047-27-7) ceramic sputtering targets in 3N5 (99.95%) / 4N purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-PZTHigh-density hot-pressed lead zirconate titanate (PZT 52/48) (Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO), CAS 12626-81-2) ceramic sputtering targets in 3N5 (99.95%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-LIBHigh-density hot-pressed Solid-State battery targets (LiCoO2, Li3PO4, LLZO) (LiCoO2 / Li3PO4 / LiMn2O4 / Li4Ti5O12 / LLZO, CAS 12190-79-3) ceramic sputtering targets in 3N5 (99.95%) / 4N (with optional 10–15% Li excess) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-ALNHigh-density hot-pressed aluminum nitride (AlN, CAS 24304-00-5) ceramic sputtering targets in 3N5 (99.95%) / 4N purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-SI3N4High-density hot-pressed silicon nitride (Si3N4, CAS 12033-89-5) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-TINHigh-density hot-pressed titanium nitride (TiN, CAS 25583-20-4) ceramic sputtering targets in 3N5 (99.95%) / 4N purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-SICHigh-density hot-pressed silicon carbide (SiC, CAS 409-21-2) ceramic sputtering targets in 4N (99.99%) / 4N5 purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-TMDHigh-density hot-pressed 2D Transition-Metal dichalcogenides (MoS2, WS2, MoSe2, WSe2) (MoS2 / WS2 / MoSe2 / WSe2, CAS 1317-33-5) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-ZNSHigh-density hot-pressed zinc sulfide & zinc selenide (ZnS, ZnSe) (ZnS / ZnSe, CAS 1314-98-3) ceramic sputtering targets in 4N5 (99.995%) / 5N CVD Optical Grade purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-EV-ALVacuum-degassed 5N (99.999%) / 5N5 aluminum (Al, CAS 7429-90-5) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-TIVacuum-degassed 4N5 (99.995%) / 5N (99.999%) titanium (Ti, CAS 7440-32-6) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-CRVacuum-degassed 4N (99.99%) / 4N5 (99.995%) chromium (Cr, CAS 7440-47-3) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-CUVacuum-degassed 5N (99.999%) / 6N OFHC copper (Cu, CAS 7440-50-8) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-NIVacuum-degassed 4N5 (99.995%) / 5N (99.999%) nickel (Ni, CAS 7440-02-0) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-AGVacuum-degassed 4N5 (99.995%) / 5N (99.999%) silver (Ag, CAS 7440-22-4) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-GEVacuum-degassed 5N (99.999%) / 6N Zone-Refined germanium (Ge, CAS 7440-56-4) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-SIOVacuum-degassed 4N (99.99%) Vacuum-Sublimed Grade silicon monoxide (SiO, CAS 10097-28-6) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-SIO2Vacuum-degassed 4N5 (99.995%) / 5N silicon dioxide (optical quartz) (SiO2, CAS 60676-86-0) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-MGF2Vacuum-degassed 4N5 (99.995%) Vacuum-Grown Crystal Optical Grade magnesium fluoride (MgF2, CAS 7783-40-6) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-TI3O5Vacuum-degassed 4N (99.99%) Pre-Reduced Spit-Free Optical Grade titanium Sub-Oxide (Ti3O5 & TiO2) (Ti3O5 / TiO2, CAS 12065-65-5) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-TA2O5Vacuum-degassed 4N (99.99%) / 4N5 Vacuum-Sintered tantalum pentoxide (Ta2O5, CAS 1314-61-0) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-HFO2Vacuum-degassed 4N (99.99% excl. Zr) / 4N5 Low-Zr Laser Grade hafnium dioxide (HfO2, CAS 12055-23-1) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-ZRO2Vacuum-degassed 4N (99.99%) Optical Grade (Pure or Y2O3/TiO2-Stabilized) zirconium dioxide (ZrO2, CAS 1314-23-4) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-AL2O3Vacuum-degassed 4N5 (99.995%) Crushed Single-Crystal Sapphire & Sintered Tablets aluminum oxide (sapphire granules) (Al2O3, CAS 1344-28-1) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-INSNVacuum-degassed 5N (99.999%) / 6N indium & tin (In / Sn, CAS 7440-74-6) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-ZNSVacuum-degassed 4N5 (99.995%) CVD Optical Grade zinc sulfide & zinc selenide (ZnS / ZnSe, CAS 1314-98-3) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-EV-FLVacuum-degassed 4N5 (99.995%) Vacuum-Grown Optical Crystal Grade optical fluorides (LiF, CaF2, BaF2, YF3, LaF3) (LiF / CaF2 / BaF2 / YF3 / LaF3, CAS 7789-75-5) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.