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Aluminum-Doped Zinc Oxide (AZO) (ZnO:Al2O3 (98:2 wt%)) Sputtering Targets

High-density hot-pressed Aluminum-Doped zinc oxide (AZO) (ZnO:Al2O3 (98:2 wt%), CAS 1314-13-2) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.

Alternate & search designations: Aluminum-Doped Zinc Oxide (AZO) RF magnetron target, ZnO:Al2O3 (98:2 wt%) PVD dielectric cathode disc, ZnO:Al2O3 98/2 wt% AZO TCO sputter target, indium-free transparent conductive oxide
Purity / Grade Options4N (99.99%)
Standard DimensionsØ 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
Available ConfigurationsHot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
Ordering & MOQSpecification-based quote · Prototype & production lots

Material & Engineering Overview

Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99%) precursor powders, our Aluminum-Doped zinc oxide (AZO) (ZnO:Al2O3 (98:2 wt%), CAS 1314-13-2) sputtering targets achieve high relative density (typically 96%–99.5% of 5.55 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

Conductive 98:2 wt% (or 99:1 wt%) sintered AZO targets offer an indium-free, hydrogen-plasma-stable transparent conductor compatible with DC, pulsed-DC, and RF magnetrons. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering ZnO:Al2O3 (98:2 wt%) targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

Standard Shipment Documentation: Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

Primary Research & Industrial Applications

  • Indium-free transparent electrodes for CIGS, CdTe, and thin-film silicon photovoltaics
  • Hydrogen-plasma-resistant TCO windows and LED current-spreading layers
  • Low-E architectural glass thermal-barrier stacks
  • Transparent thin-film transistor (TTFT) electrodes

Nominal Material Reference Properties

Property / MetricNominal Reference Value (Grade Dependent)
Formula & CAS #ZnO:Al2O3 (98:2 wt%) (CAS 1314-13-2)
Purity Grades4N (99.99%)
Bulk / Theoretical Density5.55 g/cm³ (≥96%–99.5% relative density)
Recommended BondingMetallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
Recommended Power RampRF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.

What to Specify in Your Quote Request

Specify ZnO:Al2O3 (98:2 wt%) purity (4N (99.99%)), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.

Prepare Aluminum-Doped Zinc Oxide (AZO) (ZnO:Al2O3 (98:2 wt%)) Sputtering Targets RFQ ↗

Technical & Procurement FAQ

Why should Aluminum-Doped zinc oxide (AZO) (ZnO:Al2O3 (98:2 wt%)) targets be indium-bonded to an OFHC copper backing plate?
As a brittle ceramic, ZnO:Al2O3 (98:2 wt%) develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
What RF power conditioning procedure avoids cracking a new ZnO:Al2O3 (98:2 wt%) target?
Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
Is oxygen or nitrogen reactive gas backfill needed when sputtering ZnO:Al2O3 (98:2 wt%)?
RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.
Cross-referenced catalog

Related technical materials.

Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.

Oxide & Nitride Ceramic Sputtering Targets (ITO / ZnO / Al2O3 / SiO2 / TiO2 / AlN / SiC, CAS 50926-11-9) — Thin Film Materials studio photographTB-PVD-OX
Thin Film MaterialsITO / ZnO / Al2O3 / SiO2 / TiO2 / AlN / SiC · 50926-11-9

Oxide & Nitride Ceramic Sputtering Targets

High-density hot-pressed and HIP-consolidated oxide, nitride, carbide, and sulfide ceramic sputtering targets (ITO, AZO, ZnO, Al2O3, SiO2, TiO2, BaTiO3) indium-bonded for arc-free RF/pulsed-DC PVD.

Purity / Grade99.9% (3N) / 99.99% (4N) / 99.995% (4N5)
Typical SizeØ 1", 2", 3", 4", 6" × Thickness 2–6 mm (+ Cu Backing Plate)
Indium Tin Oxide (In2O3:SnO2 (90:10 wt%)) Sputtering Targets (In2O3:SnO2 (90:10 wt%), CAS 50926-11-9) — Thin Film Materials studio photographTB-PVD-ITO
Thin Film MaterialsIn2O3:SnO2 (90:10 wt%) · 50926-11-9

Indium Tin Oxide (In2O3:SnO2 (90:10 wt%)) Sputtering Targets

High-density hot-pressed indium tin oxide (In2O3:SnO2 (90:10 wt%), CAS 50926-11-9) ceramic sputtering targets in 4N (99.99%) · ≥99.5% Relative Density purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.

Purity / Grade4N (99.99%) · ≥99.5% Relative Density
Typical SizeØ 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
Zinc Oxide (ZnO) Sputtering Targets (ZnO, CAS 1314-13-2) — Thin Film Materials studio photographTB-PVD-ZNO
Thin Film MaterialsZnO · 1314-13-2

Zinc Oxide (ZnO) Sputtering Targets

High-density hot-pressed zinc oxide (ZnO, CAS 1314-13-2) ceramic sputtering targets in 4N (99.99%) / 4N5 / 5N purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.

Purity / Grade4N (99.99%) / 4N5 / 5N
Typical SizeØ 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
Zinc (Zn) Sputtering Targets (Zn, CAS 7440-66-6) — Thin Film Materials studio photographTB-PVD-ZN
Thin Film MaterialsZn · 7440-66-6

Zinc (Zn) Sputtering Targets

Vacuum-melted high-purity zinc (Zn, CAS 7440-66-6) planar magnetron sputtering targets in 4N (99.99%) / 4N5 (99.995%) / 5N grades for semiconductor, optical, and research PVD.

Purity / Grade4N (99.99%) / 4N5 (99.995%) / 5N
Typical SizeØ 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
Custom & catalog specifications

Need pricing, lead time, or custom dimensions?

Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.

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