High-density hot-pressed indium tin oxide (In2O3:SnO2 (90:10 wt%), CAS 50926-11-9) ceramic sputtering targets in 4N (99.99%) · ≥99.5% Relative Density purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99%) · ≥99.5% Relative Density precursor powders, our indium tin oxide (In2O3:SnO2 (90:10 wt%), CAS 50926-11-9) sputtering targets achieve high relative density (typically 96%–99.5% of 7.12 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.
Oxygen-sintered to ≥99.5% theoretical density with low bulk resistivity (<1.5 × 10⁻⁴ Ω·cm), our 90:10 wt% ITO targets support both DC and RF magnetron sputtering with minimal black nodule build-up. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering In2O3:SnO2 (90:10 wt%) targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.
| Property / Metric | Nominal Reference Value (Grade Dependent) |
|---|---|
| Formula & CAS # | In2O3:SnO2 (90:10 wt%) (CAS 50926-11-9) |
| Purity Grades | 4N (99.99%) · ≥99.5% Relative Density |
| Bulk / Theoretical Density | 7.12 g/cm³ (≥96%–99.5% relative density) |
| Recommended Bonding | Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp) |
| Recommended Power Ramp | RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water |
Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.
Specify In2O3:SnO2 (90:10 wt%) purity (4N (99.99%) · ≥99.5% Relative Density), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.
Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.
Prepare Indium Tin Oxide (In2O3:SnO2 (90:10 wt%)) Sputtering Targets RFQ ↗Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.
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Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.