Thin Film Materials · TB-PVD-BST
Barium Titanate & Barium Strontium Titanate (BaTiO3 / Ba1-xSrxTiO3 (BST)) Sputtering Targets
High-density hot-pressed barium titanate & barium strontium titanate (BaTiO3 / Ba1-xSrxTiO3 (BST), CAS 12047-27-7) ceramic sputtering targets in 3N5 (99.95%) / 4N purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
Alternate & search designations: Barium Titanate & Barium Strontium Titanate RF magnetron target, BaTiO3 / Ba1-xSrxTiO3 (BST) PVD dielectric cathode disc, BaTiO3 & Ba0.5Sr0.5TiO3 (BST) ferroelectric RF sputtering target
Purity / Grade Options3N5 (99.95%) / 4N
Standard DimensionsØ 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
Available ConfigurationsHot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
Ordering & MOQSpecification-based quote · Prototype & production lots
Material & Engineering Overview
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 3N5 (99.95%) / 4N precursor powders, our barium titanate & barium strontium titanate (BaTiO3 / Ba1-xSrxTiO3 (BST), CAS 12047-27-7) sputtering targets achieve high relative density (typically 96%–99.5% of 5.85 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.
Hot-pressed perovskite BaTiO3 and tunable Ba0.5Sr0.5TiO3 / Ba0.6Sr0.4TiO3 targets enable RF deposition of high-permittivity (εr 200–1,000+) ferroelectric thin films. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering BaTiO3 / Ba1-xSrxTiO3 (BST) targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.
Standard Shipment Documentation: Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.
Primary Research & Industrial Applications
- Voltage-tunable microwave varactors, phase shifters, and 5G RF agile filters (BST)
- High-density thin-film decoupling capacitors and MLCC research (BaTiO3)
- Electro-optic Pockels modulators on silicon/MgO/SrTiO3 photonics platforms
- Pyroelectric uncooled IR detector arrays
Nominal Material Reference Properties
| Property / Metric | Nominal Reference Value (Grade Dependent) |
| Formula & CAS # | BaTiO3 / Ba1-xSrxTiO3 (BST) (CAS 12047-27-7) |
| Purity Grades | 3N5 (99.95%) / 4N |
| Bulk / Theoretical Density | 5.85 g/cm³ (≥96%–99.5% relative density) |
| Recommended Bonding | Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp) |
| Recommended Power Ramp | RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water |
Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.
Technical & Procurement FAQ
Why should barium titanate & barium strontium titanate (BaTiO3 / Ba1-xSrxTiO3 (BST)) targets be indium-bonded to an OFHC copper backing plate?
As a brittle ceramic, BaTiO3 / Ba1-xSrxTiO3 (BST) develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
What RF power conditioning procedure avoids cracking a new BaTiO3 / Ba1-xSrxTiO3 (BST) target?
Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
Is oxygen or nitrogen reactive gas backfill needed when sputtering BaTiO3 / Ba1-xSrxTiO3 (BST)?
RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.