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Barium Titanate & Barium Strontium Titanate (BaTiO3 / Ba1-xSrxTiO3 (BST)) Sputtering Targets

High-density hot-pressed barium titanate & barium strontium titanate (BaTiO3 / Ba1-xSrxTiO3 (BST), CAS 12047-27-7) ceramic sputtering targets in 3N5 (99.95%) / 4N purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.

Alternate & search designations: Barium Titanate & Barium Strontium Titanate RF magnetron target, BaTiO3 / Ba1-xSrxTiO3 (BST) PVD dielectric cathode disc, BaTiO3 & Ba0.5Sr0.5TiO3 (BST) ferroelectric RF sputtering target
Purity / Grade Options3N5 (99.95%) / 4N
Standard DimensionsØ 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
Available ConfigurationsHot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
Ordering & MOQSpecification-based quote · Prototype & production lots

Material & Engineering Overview

Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 3N5 (99.95%) / 4N precursor powders, our barium titanate & barium strontium titanate (BaTiO3 / Ba1-xSrxTiO3 (BST), CAS 12047-27-7) sputtering targets achieve high relative density (typically 96%–99.5% of 5.85 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

Hot-pressed perovskite BaTiO3 and tunable Ba0.5Sr0.5TiO3 / Ba0.6Sr0.4TiO3 targets enable RF deposition of high-permittivity (εr 200–1,000+) ferroelectric thin films. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering BaTiO3 / Ba1-xSrxTiO3 (BST) targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

Standard Shipment Documentation: Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

Primary Research & Industrial Applications

  • Voltage-tunable microwave varactors, phase shifters, and 5G RF agile filters (BST)
  • High-density thin-film decoupling capacitors and MLCC research (BaTiO3)
  • Electro-optic Pockels modulators on silicon/MgO/SrTiO3 photonics platforms
  • Pyroelectric uncooled IR detector arrays

Nominal Material Reference Properties

Property / MetricNominal Reference Value (Grade Dependent)
Formula & CAS #BaTiO3 / Ba1-xSrxTiO3 (BST) (CAS 12047-27-7)
Purity Grades3N5 (99.95%) / 4N
Bulk / Theoretical Density5.85 g/cm³ (≥96%–99.5% relative density)
Recommended BondingMetallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
Recommended Power RampRF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.

What to Specify in Your Quote Request

Specify BaTiO3 / Ba1-xSrxTiO3 (BST) purity (3N5 (99.95%) / 4N), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.

Prepare Barium Titanate & Barium Strontium Titanate (BaTiO3 / Ba1-xSrxTiO3 (BST)) Sputtering Targets RFQ ↗

Technical & Procurement FAQ

Why should barium titanate & barium strontium titanate (BaTiO3 / Ba1-xSrxTiO3 (BST)) targets be indium-bonded to an OFHC copper backing plate?
As a brittle ceramic, BaTiO3 / Ba1-xSrxTiO3 (BST) develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
What RF power conditioning procedure avoids cracking a new BaTiO3 / Ba1-xSrxTiO3 (BST) target?
Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
Is oxygen or nitrogen reactive gas backfill needed when sputtering BaTiO3 / Ba1-xSrxTiO3 (BST)?
RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.
Cross-referenced catalog

Related technical materials.

Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.

Oxide & Nitride Ceramic Sputtering Targets (ITO / ZnO / Al2O3 / SiO2 / TiO2 / AlN / SiC, CAS 50926-11-9) — Thin Film Materials studio photographTB-PVD-OX
Thin Film MaterialsITO / ZnO / Al2O3 / SiO2 / TiO2 / AlN / SiC · 50926-11-9

Oxide & Nitride Ceramic Sputtering Targets

High-density hot-pressed and HIP-consolidated oxide, nitride, carbide, and sulfide ceramic sputtering targets (ITO, AZO, ZnO, Al2O3, SiO2, TiO2, BaTiO3) indium-bonded for arc-free RF/pulsed-DC PVD.

Purity / Grade99.9% (3N) / 99.99% (4N) / 99.995% (4N5)
Typical SizeØ 1", 2", 3", 4", 6" × Thickness 2–6 mm (+ Cu Backing Plate)
Lead Zirconate Titanate (PZT 52/48) (Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO)) Sputtering Targets (Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO), CAS 12626-81-2) — Thin Film Materials studio photographTB-PVD-PZT
Thin Film MaterialsPb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO) · 12626-81-2

Lead Zirconate Titanate (PZT 52/48) (Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO)) Sputtering Targets

High-density hot-pressed lead zirconate titanate (PZT 52/48) (Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO), CAS 12626-81-2) ceramic sputtering targets in 3N5 (99.95%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.

Purity / Grade3N5 (99.95%)
Typical SizeØ 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
Strontium Titanate (SrTiO3 & Nb:STO) Single-Crystal Substrates (SrTiO3 / Nb:SrTiO3, CAS 12060-59-2) — Fused Quartz & Substrates studio photographTB-SUB-STO
Fused Quartz & SubstratesSrTiO3 / Nb:SrTiO3 · 12060-59-2

Strontium Titanate (SrTiO3 & Nb:STO) Single-Crystal Substrates

Epi-ready CMP-polished strontium titanate (SrTiO3 & Nb:STO) Single-Crystal substrates (SrTiO3 / Nb:SrTiO3, CAS 12060-59-2) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.

Purity / GradeVerneuil Single Crystal 4N (Undoped Insulating or 0.05–0.7 wt% Nb-Doped Conductive)
Typical Size10×10 mm, 5×5 mm, 10×5 mm, Ø 1", Ø 2", Ø 3", Ø 4" × 0.5 mm / 1.0 mm
Custom & catalog specifications

Need pricing, lead time, or custom dimensions?

Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.

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