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Lead Zirconate Titanate (PZT 52/48) (Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO)) Sputtering Targets

High-density hot-pressed lead zirconate titanate (PZT 52/48) (Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO), CAS 12626-81-2) ceramic sputtering targets in 3N5 (99.95%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.

Alternate & search designations: Lead Zirconate Titanate (PZT 52/48) RF magnetron target, Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO) PVD dielectric cathode disc, PZT 52/48 (with excess PbO) piezoelectric MEMS sputtering target
Purity / Grade Options3N5 (99.95%)
Standard DimensionsØ 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
Available ConfigurationsHot-pressed / HIP high-density ceramic disc; Metallic Indium bonded to OFHC Cu
Ordering & MOQSpecification-based quote · Prototype & production lots

Material & Engineering Overview

Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 3N5 (99.95%) precursor powders, our lead zirconate titanate (PZT 52/48) (Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO), CAS 12626-81-2) sputtering targets achieve high relative density (typically 96%–99.5% of 7.60 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.

Formulated at the morphotropic phase boundary (Zr/Ti = 52/48 or Nb/La-doped PLZT) with optional 10–20 mol% excess PbO to compensate volatile lead loss during RF sputtering and annealing. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO) targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.

Standard Shipment Documentation: Manufacturer Lot COA (stoichiometry, trace metal ICP assay in ppm, sintered bulk density) and backing-plate bond inspection.

Primary Research & Industrial Applications

  • Piezoelectric MEMS inkjet printheads, autofocus micro-mirrors, and ultrasound PMUTs
  • Ferroelectric non-volatile RAM (FeRAM) and pyroelectric infrared sensors
  • Vibration energy harvesters and acoustic emission MEMS sensors
  • Electro-optic thin-film waveguide switches (PLZT)

Nominal Material Reference Properties

Property / MetricNominal Reference Value (Grade Dependent)
Formula & CAS #Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO) (CAS 12626-81-2)
Purity Grades3N5 (99.95%)
Bulk / Theoretical Density7.60 g/cm³ (≥96%–99.5% relative density)
Recommended BondingMetallic Indium bond to OFHC Cu backing plate (<120 °C max run temp)
Recommended Power RampRF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water

Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.

What to Specify in Your Quote Request

Specify Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO) purity (3N5 (99.95%)), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.

Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.

Prepare Lead Zirconate Titanate (PZT 52/48) (Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO)) Sputtering Targets RFQ ↗

Technical & Procurement FAQ

Why should lead zirconate titanate (PZT 52/48) (Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO)) targets be indium-bonded to an OFHC copper backing plate?
As a brittle ceramic, Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO) develops steep radial thermal gradients under RF plasma heating; full-coverage metallic indium bonding transfers heat efficiently into the water-cooled copper backing plate and prevents thermal-stress cracking.
What RF power conditioning procedure avoids cracking a new Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO) target?
Start at low RF power (~15–25 W on a 2-inch target), ramp slowly at 5–10 W/min over 20–30 minutes while monitoring reflected power, and never exceed ~2–4 W/cm² power density on dielectric oxide/nitride targets.
Is oxygen or nitrogen reactive gas backfill needed when sputtering Pb(Zr0.52Ti0.48)O3 (+10–20 mol% excess PbO)?
RF sputtering in pure argon often produces slightly anion-deficient films; introducing 1%–10% O2 (for oxides) or N2 (for nitrides) in the Ar plasma restores full stoichiometry and optical transparency.
Cross-referenced catalog

Related technical materials.

Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.

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Oxide & Nitride Ceramic Sputtering Targets

High-density hot-pressed and HIP-consolidated oxide, nitride, carbide, and sulfide ceramic sputtering targets (ITO, AZO, ZnO, Al2O3, SiO2, TiO2, BaTiO3) indium-bonded for arc-free RF/pulsed-DC PVD.

Purity / Grade99.9% (3N) / 99.99% (4N) / 99.995% (4N5)
Typical SizeØ 1", 2", 3", 4", 6" × Thickness 2–6 mm (+ Cu Backing Plate)
Barium Titanate & Barium Strontium Titanate (BaTiO3 / Ba1-xSrxTiO3 (BST)) Sputtering Targets (BaTiO3 / Ba1-xSrxTiO3 (BST), CAS 12047-27-7) — Thin Film Materials studio photographTB-PVD-BST
Thin Film MaterialsBaTiO3 / Ba1-xSrxTiO3 (BST) · 12047-27-7

Barium Titanate & Barium Strontium Titanate (BaTiO3 / Ba1-xSrxTiO3 (BST)) Sputtering Targets

High-density hot-pressed barium titanate & barium strontium titanate (BaTiO3 / Ba1-xSrxTiO3 (BST), CAS 12047-27-7) ceramic sputtering targets in 3N5 (99.95%) / 4N purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.

Purity / Grade3N5 (99.95%) / 4N
Typical SizeØ 1", 2", 3", 4", 6" × Thickness 2–6.35 mm (+ OFHC Cu Backing Plate)
Aluminum-Scandium (AlSc Alloy) (Al1-xScx (Sc 5–43 at.%)) Sputtering Targets (Al1-xScx (Sc 5–43 at.%), CAS 60683-64-9) — Thin Film Materials studio photographTB-PVD-ALSC
Thin Film MaterialsAl1-xScx (Sc 5–43 at.%) · 60683-64-9

Aluminum-Scandium (AlSc Alloy) (Al1-xScx (Sc 5–43 at.%)) Sputtering Targets

Vacuum-melted high-purity Aluminum-Scandium (AlSc alloy) (Al1-xScx (Sc 5–43 at.%), CAS 60683-64-9) planar magnetron sputtering targets in 4N (99.99%) Vacuum-Melted / HIP Intermetallic grades for semiconductor, optical, and research PVD.

Purity / Grade4N (99.99%) Vacuum-Melted / HIP Intermetallic
Typical SizeØ 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
Custom & catalog specifications

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Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.

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