Vacuum-melted high-purity Copper-Gallium & CIGS alloy (CuGa (70:30 / 75:25) & CuInGaSe2, CAS 57606-41-4) planar magnetron sputtering targets in 4N (99.99%) / 4N5 grades for semiconductor, optical, and research PVD.
High-purity Copper-Gallium & CIGS alloy (CuGa (70:30 / 75:25) & CuInGaSe2, CAS 57606-41-4) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.
Homogenized CuGa binary and quaternary CuInGaSe2 (CIGS) targets deliver uniform Ga/(Ga+In) grading across flexible and glass solar substrates. Each Copper-Gallium & CIGS alloy target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.
| Property / Metric | Nominal Reference Value (Grade Dependent) |
|---|---|
| Chemical Formula & CAS # | CuGa (70:30 / 75:25) & CuInGaSe2 (CAS 57606-41-4) |
| Available Purity Tiers | 4N (99.99%) / 4N5 |
| Theoretical / Bulk Density | 8.15 g/cm³ |
| Melting Point | 850–980 °C |
| Thermal / Magnetic Note | Single-phase/fine-microstructure photovoltaic precursor target |
Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.
Specify Copper-Gallium & CIGS alloy purity grade (4N (99.99%) / 4N5), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.
Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.
Prepare Copper-Gallium & CIGS Alloy (CuGa (70:30 / 75:25) & CuInGaSe2) Sputtering Targets RFQ ↗Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.
TB-PVD-MTVacuum-melted and thermomechanically forged pure metal and custom alloy planar sputtering targets (3N5–5N) sized for research and production magnetron cathodes.
TB-PVD-MOVacuum-melted high-purity molybdenum (Mo, CAS 7439-98-7) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 4N5 grades for semiconductor, optical, and research PVD.
TB-PVD-INVacuum-melted high-purity indium (In, CAS 7440-74-6) planar magnetron sputtering targets in 4N5 (99.995%) / 5N (99.999%) / 6N grades for semiconductor, optical, and research PVD.
TB-PVD-ZNOHigh-density hot-pressed zinc oxide (ZnO, CAS 1314-13-2) ceramic sputtering targets in 4N (99.99%) / 4N5 / 5N purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.