TB-PVD-MTMetal Sputtering Targets
Vacuum-melted and thermomechanically forged pure metal and custom alloy planar sputtering targets (3N5–5N) sized for research and production magnetron cathodes.
Vacuum-melted high-purity indium (In, CAS 7440-74-6) planar magnetron sputtering targets in 4N5 (99.995%) / 5N (99.999%) / 6N grades for semiconductor, optical, and research PVD.
High-purity indium (In, CAS 7440-74-6) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.
With a 156.6 °C melting point, pure indium targets are cast/bonded directly onto a chilled OFHC copper backing plate or recessed cup for low-power PVD. Each indium target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.
| Property / Metric | Nominal Reference Value (Grade Dependent) |
|---|---|
| Chemical Formula & CAS # | In (CAS 7440-74-6) |
| Available Purity Tiers | 4N5 (99.995%) / 5N (99.999%) / 6N |
| Theoretical / Bulk Density | 7.31 g/cm³ |
| Melting Point | 156.6 °C |
| Thermal / Magnetic Note | Ultra-soft & low MP 156.6 °C — bonded directly into recessed Cu backing cup! |
Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.
Specify indium purity grade (4N5 (99.995%) / 5N (99.999%) / 6N), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.
Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.
Prepare Indium (In) Sputtering Targets RFQ ↗Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.
TB-PVD-MTVacuum-melted and thermomechanically forged pure metal and custom alloy planar sputtering targets (3N5–5N) sized for research and production magnetron cathodes.
TB-PVD-ITOHigh-density hot-pressed indium tin oxide (In2O3:SnO2 (90:10 wt%), CAS 50926-11-9) ceramic sputtering targets in 4N (99.99%) · ≥99.5% Relative Density purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-EV-INSNVacuum-degassed 5N (99.999%) / 6N indium & tin (In / Sn, CAS 7440-74-6) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-PVD-CIGSVacuum-melted high-purity Copper-Gallium & CIGS alloy (CuGa (70:30 / 75:25) & CuInGaSe2, CAS 57606-41-4) planar magnetron sputtering targets in 4N (99.99%) / 4N5 grades for semiconductor, optical, and research PVD.
Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.