Vacuum-melted high-purity Titanium-Tungsten (TiW 10/90) (TiW (10:90 wt% / 30:70 at.%), CAS 7440-33-7) planar magnetron sputtering targets in 3N5 (99.95%) / 4N Low-Alkali Semiconductor Grade grades for semiconductor, optical, and research PVD.
High-purity Titanium-Tungsten (TiW 10/90) (TiW (10:90 wt% / 30:70 at.%), CAS 7440-33-7) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.
Consolidated by hot isostatic pressing from high-purity Ti and W powders, TiW (10:90 wt%) targets provide dense, single-target co-deposition of adhesion + diffusion barrier films. Each Titanium-Tungsten (TiW 10/90) target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.
| Property / Metric | Nominal Reference Value (Grade Dependent) |
|---|---|
| Chemical Formula & CAS # | TiW (10:90 wt% / 30:70 at.%) (CAS 7440-33-7) |
| Available Purity Tiers | 3N5 (99.95%) / 4N Low-Alkali Semiconductor Grade |
| Theoretical / Bulk Density | 14.80 g/cm³ |
| Melting Point | 3,000+ °C |
| Thermal / Magnetic Note | Classic pseudo-alloy diffusion barrier & adhesion layer |
Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.
Specify Titanium-Tungsten (TiW 10/90) purity grade (3N5 (99.95%) / 4N Low-Alkali Semiconductor Grade), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.
Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.
Prepare Titanium-Tungsten (TiW 10/90) (TiW (10:90 wt% / 30:70 at.%)) Sputtering Targets RFQ ↗Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.
TB-PVD-MTVacuum-melted and thermomechanically forged pure metal and custom alloy planar sputtering targets (3N5–5N) sized for research and production magnetron cathodes.
TB-PVD-WVacuum-melted high-purity tungsten (W, CAS 7440-33-7) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 5N grades for semiconductor, optical, and research PVD.
TB-PVD-TIVacuum-melted high-purity titanium (Ti, CAS 7440-32-6) planar magnetron sputtering targets in 4N (99.99%) / 4N5 (99.995%) / 5N grades for semiconductor, optical, and research PVD.
TB-PVD-TAVacuum-melted high-purity tantalum (Ta, CAS 7440-25-7) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 4N5 grades for semiconductor, optical, and research PVD.
Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.