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Thin Film Materials · TB-PVD-W

Tungsten (W) Sputtering Targets

Vacuum-melted high-purity tungsten (W, CAS 7440-33-7) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 5N grades for semiconductor, optical, and research PVD.

Alternate & search designations: High-purity tungsten PVD magnetron target, 3N5 (99.95%) / 4N (99.99%) / 5N W planar sputter cathode disc, 5N semiconductor tungsten PVD target, HIP wolfram sputter disc
Purity / Grade Options3N5 (99.95%) / 4N (99.99%) / 5N
Standard DimensionsØ 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
Available ConfigurationsMonolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
Ordering & MOQSpecification-based quote · Prototype & production lots

Material & Engineering Overview

High-purity tungsten (W, CAS 7440-33-7) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Hot-isostatically pressed and forged tungsten targets achieve ≥99.5% density; metallic indium bonding to OFHC Cu is recommended for high power. Each tungsten target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

Standard Shipment Documentation: Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for W, bulk density), dimensional inspection, and indium-bond check if bonded.

Primary Research & Industrial Applications

  • Refractory gate electrodes, diffusion barriers (W / WN / WSi2), and MEMS heaters
  • Reactive sputtering of electrochromic WO3 and 2D WS2/WSe2 precursors
  • X-ray multilayer mirrors and high-Z radiation mask absorber coatings
  • High-temperature wear and erosion-resistant PVD coatings

Nominal Material Reference Properties

Property / MetricNominal Reference Value (Grade Dependent)
Chemical Formula & CAS #W (CAS 7440-33-7)
Available Purity Tiers3N5 (99.95%) / 4N (99.99%) / 5N
Theoretical / Bulk Density19.25 g/cm³
Melting Point3,422 °C
Thermal / Magnetic NoteParamagnetic; Low CTE 4.5 × 10⁻⁶ /K; Low sputter yield distortion

Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.

What to Specify in Your Quote Request

Specify tungsten purity grade (3N5 (99.95%) / 4N (99.99%) / 5N), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.

Prepare Tungsten (W) Sputtering Targets RFQ ↗

Technical & Procurement FAQ

What purity grade of tungsten (W) sputtering target should I select?
Standard 3N5 (99.95%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
Should my tungsten sputtering target be bonded to a copper backing plate?
Hot-isostatically pressed and forged tungsten targets achieve ≥99.5% density; metallic indium bonding to OFHC Cu is recommended for high power. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
What batch certification ships with TB-PVD-W?
Every tungsten target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.
Cross-referenced catalog

Related technical materials.

Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.

Metal Sputtering Targets (Ti / Cr / Al / Cu / Ni / W / Mo / Ta, CAS 7440-32-6) — Thin Film Materials studio photographTB-PVD-MT
Thin Film MaterialsTi / Cr / Al / Cu / Ni / W / Mo / Ta · 7440-32-6

Metal Sputtering Targets

Vacuum-melted and thermomechanically forged pure metal and custom alloy planar sputtering targets (3N5–5N) sized for research and production magnetron cathodes.

Purity / Grade3N5 (99.95%) / 4N (99.99%) / 4N5 / 5N (99.999%)
Typical SizeØ 1", 2", 3", 4", 6", 8" × Thickness 1–12.7 mm; Rectangular plates
Titanium-Tungsten (TiW 10/90) (TiW (10:90 wt% / 30:70 at.%)) Sputtering Targets (TiW (10:90 wt% / 30:70 at.%), CAS 7440-33-7) — Thin Film Materials studio photographTB-PVD-TIW
Thin Film MaterialsTiW (10:90 wt% / 30:70 at.%) · 7440-33-7

Titanium-Tungsten (TiW 10/90) (TiW (10:90 wt% / 30:70 at.%)) Sputtering Targets

Vacuum-melted high-purity Titanium-Tungsten (TiW 10/90) (TiW (10:90 wt% / 30:70 at.%), CAS 7440-33-7) planar magnetron sputtering targets in 3N5 (99.95%) / 4N Low-Alkali Semiconductor Grade grades for semiconductor, optical, and research PVD.

Purity / Grade3N5 (99.95%) / 4N Low-Alkali Semiconductor Grade
Typical SizeØ 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
Custom & catalog specifications

Need pricing, lead time, or custom dimensions?

Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.

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