High-density hot-pressed aluminum oxide (alumina) (Al2O3, CAS 1344-28-1) ceramic sputtering targets in 4N (99.99%) / 4N5 purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99%) / 4N5 precursor powders, our aluminum oxide (alumina) (Al2O3, CAS 1344-28-1) sputtering targets achieve high relative density (typically 96%–99.5% of 3.90 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.
Dense sintered 4N–4N5 Al2O3 targets deposit amorphous dielectric barrier, passivation, and optical films with high breakdown strength under RF magnetron sputtering. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering Al2O3 targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.
| Property / Metric | Nominal Reference Value (Grade Dependent) |
|---|---|
| Formula & CAS # | Al2O3 (CAS 1344-28-1) |
| Purity Grades | 4N (99.99%) / 4N5 |
| Bulk / Theoretical Density | 3.90 g/cm³ (≥96%–99.5% relative density) |
| Recommended Bonding | Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp) |
| Recommended Power Ramp | RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water |
Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.
Specify Al2O3 purity (4N (99.99%) / 4N5), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.
Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.
Prepare Aluminum Oxide (Alumina) (Al2O3) Sputtering Targets RFQ ↗Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.
TB-PVD-OXHigh-density hot-pressed and HIP-consolidated oxide, nitride, carbide, and sulfide ceramic sputtering targets (ITO, AZO, ZnO, Al2O3, SiO2, TiO2, BaTiO3) indium-bonded for arc-free RF/pulsed-DC PVD.
TB-PVD-ALVacuum-melted high-purity aluminum (Al, CAS 7429-90-5) planar magnetron sputtering targets in 4N (99.99%) / 5N (99.999%) / 5N5 grades for semiconductor, optical, and research PVD.
TB-EV-AL2O3Vacuum-degassed 4N5 (99.995%) Crushed Single-Crystal Sapphire & Sintered Tablets aluminum oxide (sapphire granules) (Al2O3, CAS 1344-28-1) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-SAP-SBEpi-ready single-crystal sapphire substrates (C-, R-, A-, M-plane) and Mohs-9 optical sapphire pressure/IR windows from 180 nm UV to 5.0 µm mid-IR.
Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.