Vacuum-melted high-purity aluminum (Al, CAS 7429-90-5) planar magnetron sputtering targets in 4N (99.99%) / 5N (99.999%) / 5N5 grades for semiconductor, optical, and research PVD.
High-purity aluminum (Al, CAS 7429-90-5) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.
High-conductivity vacuum-melted aluminum can be clamped monolithically or bonded for high-rate interconnects and reactive nitride/oxide runs. Each aluminum target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.
| Property / Metric | Nominal Reference Value (Grade Dependent) |
|---|---|
| Chemical Formula & CAS # | Al (CAS 7429-90-5) |
| Available Purity Tiers | 4N (99.99%) / 5N (99.999%) / 5N5 |
| Theoretical / Bulk Density | 2.70 g/cm³ |
| Melting Point | 660 °C |
| Thermal / Magnetic Note | Non-magnetic; High thermal conductivity 237 W/m·K |
Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.
Specify aluminum purity grade (4N (99.99%) / 5N (99.999%) / 5N5), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.
Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.
Prepare Aluminum (Al) Sputtering Targets RFQ ↗Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.
TB-PVD-MTVacuum-melted and thermomechanically forged pure metal and custom alloy planar sputtering targets (3N5–5N) sized for research and production magnetron cathodes.
TB-EV-ALVacuum-degassed 5N (99.999%) / 5N5 aluminum (Al, CAS 7429-90-5) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-PVD-ALOHigh-density hot-pressed aluminum oxide (alumina) (Al2O3, CAS 1344-28-1) ceramic sputtering targets in 4N (99.99%) / 4N5 purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-ALNHigh-density hot-pressed aluminum nitride (AlN, CAS 24304-00-5) ceramic sputtering targets in 3N5 (99.95%) / 4N purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.