High-density hot-pressed aluminum nitride (AlN, CAS 24304-00-5) ceramic sputtering targets in 3N5 (99.95%) / 4N purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 3N5 (99.95%) / 4N precursor powders, our aluminum nitride (AlN, CAS 24304-00-5) sputtering targets achieve high relative density (typically 96%–99.5% of 3.22 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.
Hot-pressed binder-free AlN ceramic targets allow direct RF magnetron sputtering of piezoelectric c-axis (0002) AlN and high-thermal-conductivity dielectric films. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering AlN targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.
| Property / Metric | Nominal Reference Value (Grade Dependent) |
|---|---|
| Formula & CAS # | AlN (CAS 24304-00-5) |
| Purity Grades | 3N5 (99.95%) / 4N |
| Bulk / Theoretical Density | 3.22 g/cm³ (≥96%–99.5% relative density) |
| Recommended Bonding | Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp) |
| Recommended Power Ramp | RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water |
Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.
Specify AlN purity (3N5 (99.95%) / 4N), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.
Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.
Prepare Aluminum Nitride (AlN) Sputtering Targets RFQ ↗Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.
TB-PVD-OXHigh-density hot-pressed and HIP-consolidated oxide, nitride, carbide, and sulfide ceramic sputtering targets (ITO, AZO, ZnO, Al2O3, SiO2, TiO2, BaTiO3) indium-bonded for arc-free RF/pulsed-DC PVD.
TB-PVD-ALVacuum-melted high-purity aluminum (Al, CAS 7429-90-5) planar magnetron sputtering targets in 4N (99.99%) / 5N (99.999%) / 5N5 grades for semiconductor, optical, and research PVD.
TB-PVD-ALSCVacuum-melted high-purity Aluminum-Scandium (AlSc alloy) (Al1-xScx (Sc 5–43 at.%), CAS 60683-64-9) planar magnetron sputtering targets in 4N (99.99%) Vacuum-Melted / HIP Intermetallic grades for semiconductor, optical, and research PVD.
TB-AL2O3-PLThin tape-cast electronic substrates (96% / 99.6%) and thick precision-ground alumina setter and wear plates with optional laser cutting or CNC machining.
Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.