Epi-ready CMP-polished GaN-on-Sapphire & AlN-on-Sapphire epi templates (GaN / AlN on α-Al2O3, CAS 25617-97-4) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
Precision-grown and chemical-mechanical-polished (CMP) in a Class 100 cleanroom, our GaN-on-Sapphire & AlN-on-Sapphire epi templates (GaN / AlN on α-Al2O3, CAS 25617-97-4) substrates provide atomically smooth, epi-ready surfaces (Ra < 0.2–0.5 nm) for thin-film epitaxy, pulsed laser deposition (PLD), magnetron sputtering, molecular beam epitaxy (MBE), and optical characterization.
Pre-grown MOCVD/HVPE GaN and AlN epitaxial templates on C-plane sapphire allow labs to jump straight into active III-nitride quantum well, HEMT, UV-LED, and acoustic resonator regrowth or device fabrication. Standard research sizes include 5×5 mm, 10×10 mm, and 15×15 mm diced squares (0.5 mm or 1.0 mm thick) as well as Ø 1-inch, 2-inch, 3-inch, and 4-inch wafers in single-side (SSP) or double-side (DSP) polished finishes, packed in individual waffle trays or nitrogen-sealed cassettes with batch orientation and surface inspection data.
| Property / Metric | Nominal Reference Value (Grade Dependent) |
|---|---|
| Formula & CAS # | GaN / AlN on α-Al2O3 (CAS 25617-97-4) |
| Crystal System / Grade | Hexagonal Wurtzite (0001) on C-Plane Sapphire · MOCVD / HVPE Epitaxial Template (Undoped, Si-Doped N-Type, or Fe-Doped Semi-Insulating) |
| Density | 6.15 (GaN) / 3.26 (AlN) g/cm³ |
| Standard Orientations | (0001) C-Plane (1–5 µm AlN or 3–5 µm GaN epilayer on Ø 2" / 4" or 10×10 mm Sapphire) |
| Surface Finish (CMP) | Epi-Ready As-Grown Atomic Step Surface (Ra < 0.3 nm) |
Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.
Specify GaN / AlN on α-Al2O3 crystallographic orientation ((0001) C-Plane (1–5 µm AlN or 3–5 µm GaN epilayer on Ø 2" / 4" or 10×10 mm Sapphire)), dimensions and thickness (e.g., 10×10×0.5 mm or Ø 2" × 0.5 mm), SSP vs. DSP polish, edge orientation, and pack count.
Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.
Prepare GaN-on-Sapphire & AlN-on-Sapphire Epi Templates RFQ ↗Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.
TB-SAP-SBEpi-ready single-crystal sapphire substrates (C-, R-, A-, M-plane) and Mohs-9 optical sapphire pressure/IR windows from 180 nm UV to 5.0 µm mid-IR.
TB-SUB-SICEpi-ready CMP-polished Single-Crystal 4H-SiC & 6H-SiC wafers & substrates (SiC (4H / 6H), CAS 409-21-2) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
TB-PVD-ALNHigh-density hot-pressed aluminum nitride (AlN, CAS 24304-00-5) ceramic sputtering targets in 3N5 (99.95%) / 4N purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-ALSCVacuum-melted high-purity Aluminum-Scandium (AlSc alloy) (Al1-xScx (Sc 5–43 at.%), CAS 60683-64-9) planar magnetron sputtering targets in 4N (99.99%) Vacuum-Melted / HIP Intermetallic grades for semiconductor, optical, and research PVD.
Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.