Epi-ready CMP-polished Single-Crystal 4H-SiC & 6H-SiC wafers & substrates (SiC (4H / 6H), CAS 409-21-2) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
Precision-grown and chemical-mechanical-polished (CMP) in a Class 100 cleanroom, our Single-Crystal 4H-SiC & 6H-SiC wafers & substrates (SiC (4H / 6H), CAS 409-21-2) substrates provide atomically smooth, epi-ready surfaces (Ra < 0.2–0.5 nm) for thin-film epitaxy, pulsed laser deposition (PLD), magnetron sputtering, molecular beam epitaxy (MBE), and optical characterization.
Wide-bandgap (3.26 eV for 4H-SiC) and ultra-high thermal conductivity (~370–490 W/m·K) make single-crystal SiC the premier substrate for GaN/AlN epitaxy, high-power electronics, and quantum color-center photonics. Standard research sizes include 5×5 mm, 10×10 mm, and 15×15 mm diced squares (0.5 mm or 1.0 mm thick) as well as Ø 1-inch, 2-inch, 3-inch, and 4-inch wafers in single-side (SSP) or double-side (DSP) polished finishes, packed in individual waffle trays or nitrogen-sealed cassettes with batch orientation and surface inspection data.
| Property / Metric | Nominal Reference Value (Grade Dependent) |
|---|---|
| Formula & CAS # | SiC (4H / 6H) (CAS 409-21-2) |
| Crystal System / Grade | Hexagonal Wurtzite Polytype (4H / 6H) · PVT Single-Crystal N-Type Conductive & High-Purity Semi-Insulating (HPSI) |
| Density | 3.21 g/cm³ |
| Standard Orientations | (0001) On-Axis or 4° Off-Axis toward <11-20>; Si-Face CMP |
| Surface Finish (CMP) | Si-face Epi-Ready CMP (Ra < 0.2 nm); C-face Optical Polish |
Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.
Specify SiC (4H / 6H) crystallographic orientation ((0001) On-Axis or 4° Off-Axis toward <11-20>; Si-Face CMP), dimensions and thickness (e.g., 10×10×0.5 mm or Ø 2" × 0.5 mm), SSP vs. DSP polish, edge orientation, and pack count.
Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.
Prepare Single-Crystal 4H-SiC & 6H-SiC Wafers & Substrates RFQ ↗Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.
TB-SAP-SBEpi-ready single-crystal sapphire substrates (C-, R-, A-, M-plane) and Mohs-9 optical sapphire pressure/IR windows from 180 nm UV to 5.0 µm mid-IR.
TB-SUB-GANEpi-ready CMP-polished GaN-on-Sapphire & AlN-on-Sapphire epi templates (GaN / AlN on α-Al2O3, CAS 25617-97-4) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
TB-PVD-SICHigh-density hot-pressed silicon carbide (SiC, CAS 409-21-2) ceramic sputtering targets in 4N (99.99%) / 4N5 purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-SIC-CMPExtreme-hardness sintered silicon carbide (SSiC) and thermal-shock-proof silicon nitride (Si3N4) wear components, kiln furniture, seal rings, and molten-metal hardware.
Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.