High-density hot-pressed indium gallium zinc oxide (IGZO) (InGaZnO4 (In:Ga:Zn = 1:1:1 at.%), CAS Composition dependent; confirm supplier SDS) ceramic sputtering targets in 4N (99.99%) · High-Density Conductive Ceramic purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99%) · High-Density Conductive Ceramic precursor powders, our indium gallium zinc oxide (IGZO) (InGaZnO4 (In:Ga:Zn = 1:1:1 at.%), CAS Composition dependent; confirm supplier SDS) sputtering targets achieve high relative density (typically 96%–99.5% of 6.20 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.
Single-phase homologous InGaZnO4 (1:1:1 atomic ratio, or custom 2:2:1) sintered targets deliver high electron mobility (>10–30 cm²/V·s) and ultra-low off-current in amorphous oxide TFTs. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering InGaZnO4 (In:Ga:Zn = 1:1:1 at.%) targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.
| Property / Metric | Nominal Reference Value (Grade Dependent) |
|---|---|
| Formula & CAS # | InGaZnO4 (In:Ga:Zn = 1:1:1 at.%) (CAS Composition dependent; confirm supplier SDS) |
| Purity Grades | 4N (99.99%) · High-Density Conductive Ceramic |
| Bulk / Theoretical Density | 6.20 g/cm³ (≥96%–99.5% relative density) |
| Recommended Bonding | Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp) |
| Recommended Power Ramp | RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water |
Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.
Specify InGaZnO4 (In:Ga:Zn = 1:1:1 at.%) purity (4N (99.99%) · High-Density Conductive Ceramic), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.
Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.
Prepare Indium Gallium Zinc Oxide (IGZO) (InGaZnO4 (In:Ga:Zn = 1:1:1 at.%)) Sputtering Targets RFQ ↗Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.
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TB-PVD-INVacuum-melted high-purity indium (In, CAS 7440-74-6) planar magnetron sputtering targets in 4N5 (99.995%) / 5N (99.999%) / 6N grades for semiconductor, optical, and research PVD.
Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.