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Thin Film Materials · TB-PVD-MN

Manganese (Mn) Sputtering Targets

Vacuum-melted high-purity manganese (Mn, CAS 7439-96-5) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) grades for semiconductor, optical, and research PVD.

Alternate & search designations: High-purity manganese PVD magnetron target, 3N5 (99.95%) / 4N (99.99%) Mn planar sputter cathode disc, Hot-pressed 4N manganese indium-bonded sputter target, CuMn / IrMn PVD target
Purity / Grade Options3N5 (99.95%) / 4N (99.99%)
Standard DimensionsØ 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
Available ConfigurationsMonolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
Ordering & MOQSpecification-based quote · Prototype & production lots

Material & Engineering Overview

High-purity manganese (Mn, CAS 7439-96-5) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Pure alpha-manganese is naturally hard and brittle at room temperature, so targets are hot-pressed/sintered and metallic-indium bonded to OFHC copper backing plates. Each manganese target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

Standard Shipment Documentation: Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Mn, bulk density), dimensional inspection, and indium-bond check if bonded.

Primary Research & Industrial Applications

  • Antiferromagnetic pinning alloys (IrMn, PtMn, FeMn) in MTJ/GMR magnetic sensors
  • Self-forming Cu-Mn barrier/seed layers for sub-10 nm semiconductor Cu interconnects
  • Reactive MnO2 / LiMn2O4 thin-film supercapacitor and battery electrodes
  • Diluted magnetic semiconductor dopants

Nominal Material Reference Properties

Property / MetricNominal Reference Value (Grade Dependent)
Chemical Formula & CAS #Mn (CAS 7439-96-5)
Available Purity Tiers3N5 (99.95%) / 4N (99.99%)
Theoretical / Bulk Density7.21 g/cm³
Melting Point1,246 °C
Thermal / Magnetic NoteAntiferromagnetic below 100 K; Brittle alpha-Mn (Indium bond required!)

Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.

What to Specify in Your Quote Request

Specify manganese purity grade (3N5 (99.95%) / 4N (99.99%)), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.

Prepare Manganese (Mn) Sputtering Targets RFQ ↗

Technical & Procurement FAQ

What purity grade of manganese (Mn) sputtering target should I select?
Standard 3N5 (99.95%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
Should my manganese sputtering target be bonded to a copper backing plate?
Pure alpha-manganese is naturally hard and brittle at room temperature, so targets are hot-pressed/sintered and metallic-indium bonded to OFHC copper backing plates. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
What batch certification ships with TB-PVD-MN?
Every manganese target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.
Cross-referenced catalog

Related technical materials.

Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.

Metal Sputtering Targets (Ti / Cr / Al / Cu / Ni / W / Mo / Ta, CAS 7440-32-6) — Thin Film Materials studio photographTB-PVD-MT
Thin Film MaterialsTi / Cr / Al / Cu / Ni / W / Mo / Ta · 7440-32-6

Metal Sputtering Targets

Vacuum-melted and thermomechanically forged pure metal and custom alloy planar sputtering targets (3N5–5N) sized for research and production magnetron cathodes.

Purity / Grade3N5 (99.95%) / 4N (99.99%) / 4N5 / 5N (99.999%)
Typical SizeØ 1", 2", 3", 4", 6", 8" × Thickness 1–12.7 mm; Rectangular plates
Cobalt (Co) Sputtering Targets (Co, CAS 7440-48-4) — Thin Film Materials studio photographTB-PVD-CO
Thin Film MaterialsCo · 7440-48-4

Cobalt (Co) Sputtering Targets

Vacuum-melted high-purity cobalt (Co, CAS 7440-48-4) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 4N5 grades for semiconductor, optical, and research PVD.

Purity / Grade3N5 (99.95%) / 4N (99.99%) / 4N5
Typical SizeØ 1", 2", 3", 4" × 1.0–2.0 mm (thin magnetic pass-through) or 3–6 mm
Copper (Cu) Sputtering Targets (Cu, CAS 7440-50-8) — Thin Film Materials studio photographTB-PVD-CU
Thin Film MaterialsCu · 7440-50-8

Copper (Cu) Sputtering Targets

Vacuum-melted high-purity copper (Cu, CAS 7440-50-8) planar magnetron sputtering targets in 4N5 (99.995%) / 5N (99.999%) / 6N OFHC grades for semiconductor, optical, and research PVD.

Purity / Grade4N5 (99.995%) / 5N (99.999%) / 6N OFHC
Typical SizeØ 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
Oxide & Nitride Ceramic Sputtering Targets (ITO / ZnO / Al2O3 / SiO2 / TiO2 / AlN / SiC, CAS 50926-11-9) — Thin Film Materials studio photographTB-PVD-OX
Thin Film MaterialsITO / ZnO / Al2O3 / SiO2 / TiO2 / AlN / SiC · 50926-11-9

Oxide & Nitride Ceramic Sputtering Targets

High-density hot-pressed and HIP-consolidated oxide, nitride, carbide, and sulfide ceramic sputtering targets (ITO, AZO, ZnO, Al2O3, SiO2, TiO2, BaTiO3) indium-bonded for arc-free RF/pulsed-DC PVD.

Purity / Grade99.9% (3N) / 99.99% (4N) / 99.995% (4N5)
Typical SizeØ 1", 2", 3", 4", 6" × Thickness 2–6 mm (+ Cu Backing Plate)
Custom & catalog specifications

Need pricing, lead time, or custom dimensions?

Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.

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