High-density hot-pressed 2D Transition-Metal dichalcogenides (MoS2, WS2, MoSe2, WSe2) (MoS2 / WS2 / MoSe2 / WSe2, CAS 1317-33-5) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99%) precursor powders, our 2D Transition-Metal dichalcogenides (MoS2, WS2, MoSe2, WSe2) (MoS2 / WS2 / MoSe2 / WSe2, CAS 1317-33-5) sputtering targets achieve high relative density (typically 96%–99.5% of 4.95–7.40 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.
Hot-pressed high-density chalcogenide targets allow wafer-scale magnetron sputtering of 2D semiconductor layers and ultra-low-friction vacuum solid-lubricant coatings. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering MoS2 / WS2 / MoSe2 / WSe2 targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.
| Property / Metric | Nominal Reference Value (Grade Dependent) |
|---|---|
| Formula & CAS # | MoS2 / WS2 / MoSe2 / WSe2 (CAS 1317-33-5) |
| Purity Grades | 4N (99.99%) |
| Bulk / Theoretical Density | 4.95–7.40 g/cm³ (≥96%–99.5% relative density) |
| Recommended Bonding | Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp) |
| Recommended Power Ramp | RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water |
Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.
Specify MoS2 / WS2 / MoSe2 / WSe2 purity (4N (99.99%)), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.
Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.
Prepare 2D Transition-Metal Dichalcogenides (MoS2, WS2, MoSe2, WSe2) (MoS2 / WS2 / MoSe2 / WSe2) Sputtering Targets RFQ ↗Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.
TB-PVD-OXHigh-density hot-pressed and HIP-consolidated oxide, nitride, carbide, and sulfide ceramic sputtering targets (ITO, AZO, ZnO, Al2O3, SiO2, TiO2, BaTiO3) indium-bonded for arc-free RF/pulsed-DC PVD.
TB-PVD-MOVacuum-melted high-purity molybdenum (Mo, CAS 7439-98-7) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 4N5 grades for semiconductor, optical, and research PVD.
TB-PVD-WVacuum-melted high-purity tungsten (W, CAS 7440-33-7) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 5N grades for semiconductor, optical, and research PVD.
TB-SIO2-BTUltra-clean 99.99% fused quartz combustion boats, lidded CVD precursor sleds, and precision-slotted wafer carriers for contamination-free thermal processing.
Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.