High-density hot-pressed tantalum pentoxide (Ta2O5, CAS 1314-61-0) ceramic sputtering targets in 4N (99.99%) / 4N5 (99.995%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99%) / 4N5 (99.995%) precursor powders, our tantalum pentoxide (Ta2O5, CAS 1314-61-0) sputtering targets achieve high relative density (typically 96%–99.5% of 8.10 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.
Hot-pressed 4N5 Ta2O5 targets deposit ultra-low-absorption high-index (n ~ 2.15) amorphous optical films and high-capacitance dielectric layers. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering Ta2O5 targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.
| Property / Metric | Nominal Reference Value (Grade Dependent) |
|---|---|
| Formula & CAS # | Ta2O5 (CAS 1314-61-0) |
| Purity Grades | 4N (99.99%) / 4N5 (99.995%) |
| Bulk / Theoretical Density | 8.10 g/cm³ (≥96%–99.5% relative density) |
| Recommended Bonding | Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp) |
| Recommended Power Ramp | RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water |
Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.
Specify Ta2O5 purity (4N (99.99%) / 4N5 (99.995%)), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.
Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.
Prepare Tantalum Pentoxide (Ta2O5) Sputtering Targets RFQ ↗Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.
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TB-PVD-TAVacuum-melted high-purity tantalum (Ta, CAS 7440-25-7) planar magnetron sputtering targets in 3N5 (99.95%) / 4N (99.99%) / 4N5 grades for semiconductor, optical, and research PVD.
TB-EV-TA2O5Vacuum-degassed 4N (99.99%) / 4N5 Vacuum-Sintered tantalum pentoxide (Ta2O5, CAS 1314-61-0) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-PVD-NB2O5High-density hot-pressed niobium pentoxide (Nb2O5, CAS 1313-96-8) ceramic sputtering targets in 4N (99.99%) / 4N5 purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.