High-density hot-pressed niobium pentoxide (Nb2O5, CAS 1313-96-8) ceramic sputtering targets in 4N (99.99%) / 4N5 purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99%) / 4N5 precursor powders, our niobium pentoxide (Nb2O5, CAS 1313-96-8) sputtering targets achieve high relative density (typically 96%–99.5% of 4.55 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.
Available in stoichiometric white Nb2O5 (RF) and conductive black sub-oxide Nb2O5-x (pulsed-DC/RF) for high-index (n ~ 2.30–2.35) visible/NIR optical coatings. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering Nb2O5 targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.
| Property / Metric | Nominal Reference Value (Grade Dependent) |
|---|---|
| Formula & CAS # | Nb2O5 (CAS 1313-96-8) |
| Purity Grades | 4N (99.99%) / 4N5 |
| Bulk / Theoretical Density | 4.55 g/cm³ (≥96%–99.5% relative density) |
| Recommended Bonding | Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp) |
| Recommended Power Ramp | RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water |
Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.
Specify Nb2O5 purity (4N (99.99%) / 4N5), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.
Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.
Prepare Niobium Pentoxide (Nb2O5) Sputtering Targets RFQ ↗Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.
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TB-PVD-TA2O5High-density hot-pressed tantalum pentoxide (Ta2O5, CAS 1314-61-0) ceramic sputtering targets in 4N (99.99%) / 4N5 (99.995%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-SIO2High-density hot-pressed silicon dioxide (fused quartz) (SiO2, CAS 60676-86-0) ceramic sputtering targets in 4N5 (99.995%) / 5N (99.999%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.