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Thin Film Materials · TB-PVD-SB

Antimony (Sb) Sputtering Targets

Vacuum-melted high-purity antimony (Sb, CAS 7440-36-0) planar magnetron sputtering targets in 4N (99.99%) / 4N5 / 5N (99.999%) grades for semiconductor, optical, and research PVD.

Alternate & search designations: High-purity antimony PVD magnetron target, 4N (99.99%) / 4N5 / 5N (99.999%) Sb planar sputter cathode disc, 5N antimony phase-change & Sb2Se3 solar sputter target, Cu-backed Sb disc
Purity / Grade Options4N (99.99%) / 4N5 / 5N (99.999%)
Standard DimensionsØ 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
Available ConfigurationsMonolithic or OFHC Cu / Mo backing plate + Metallic Indium / Elastomer bonding
Ordering & MOQSpecification-based quote · Prototype & production lots

Material & Engineering Overview

High-purity antimony (Sb, CAS 7440-36-0) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.

Hot-pressed high-density antimony targets are supplied indium-bonded to OFHC copper backing plates for phase-change, thermoelectric, and solar co-sputtering. Each antimony target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.

Standard Shipment Documentation: Manufacturer Lot COA (GDMS or ICP-OES trace metallic impurity assay in ppm for Sb, bulk density), dimensional inspection, and indium-bond check if bonded.

Primary Research & Industrial Applications

  • Phase-change memory (PCM) and rewritable optical media (GeSbTe, AgInSbTe)
  • Antimony chalcogenide (Sb2Se3, Sb2S3) thin-film solar cell absorbers
  • Thermoelectric Bi-Sb-Te and skutterudite CoSb3 thin films
  • N-type semiconductor dopant and III-V antimonide research

Nominal Material Reference Properties

Property / MetricNominal Reference Value (Grade Dependent)
Chemical Formula & CAS #Sb (CAS 7440-36-0)
Available Purity Tiers4N (99.99%) / 4N5 / 5N (99.999%)
Theoretical / Bulk Density6.69 g/cm³
Melting Point630.6 °C
Thermal / Magnetic NoteSemimetal; Brittle rhombohedral structure (Indium bond required)

Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.

What to Specify in Your Quote Request

Specify antimony purity grade (4N (99.99%) / 4N5 / 5N (99.999%)), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.

Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.

Prepare Antimony (Sb) Sputtering Targets RFQ ↗

Technical & Procurement FAQ

What purity grade of antimony (Sb) sputtering target should I select?
Standard 4N (99.99%) purity suits general metallization, hard coatings, and adhesion/barrier layers, while higher 4N5–5N grades are recommended for active semiconductor junctions, low-resistivity interconnects, and quantum/optical research.
Should my antimony sputtering target be bonded to a copper backing plate?
Hot-pressed high-density antimony targets are supplied indium-bonded to OFHC copper backing plates for phase-change, thermoelectric, and solar co-sputtering. Bonding with metallic indium to an OFHC copper backing plate is recommended for brittle compositions, thin discs, or high-power-density runs (keep cooling water at 18–22 °C so the indium bond stays below 120 °C).
What batch certification ships with TB-PVD-SB?
Every antimony target ships vacuum-sealed in an argon/moisture barrier bag accompanied by the producing mill's lot Certificate of Analysis reporting elemental purity and trace metallic impurities in ppm.
Cross-referenced catalog

Related technical materials.

Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.

Metal Sputtering Targets (Ti / Cr / Al / Cu / Ni / W / Mo / Ta, CAS 7440-32-6) — Thin Film Materials studio photographTB-PVD-MT
Thin Film MaterialsTi / Cr / Al / Cu / Ni / W / Mo / Ta · 7440-32-6

Metal Sputtering Targets

Vacuum-melted and thermomechanically forged pure metal and custom alloy planar sputtering targets (3N5–5N) sized for research and production magnetron cathodes.

Purity / Grade3N5 (99.95%) / 4N (99.99%) / 4N5 / 5N (99.999%)
Typical SizeØ 1", 2", 3", 4", 6", 8" × Thickness 1–12.7 mm; Rectangular plates
Bismuth (Bi) Sputtering Targets (Bi, CAS 7440-69-9) — Thin Film Materials studio photographTB-PVD-BI
Thin Film MaterialsBi · 7440-69-9

Bismuth (Bi) Sputtering Targets

Vacuum-melted high-purity bismuth (Bi, CAS 7440-69-9) planar magnetron sputtering targets in 4N (99.99%) / 4N5 / 5N (99.999%) grades for semiconductor, optical, and research PVD.

Purity / Grade4N (99.99%) / 4N5 / 5N (99.999%)
Typical SizeØ 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
Tellurium (Te) Sputtering Targets (Te, CAS 13494-80-9) — Thin Film Materials studio photographTB-PVD-TE
Thin Film MaterialsTe · 13494-80-9

Tellurium (Te) Sputtering Targets

Vacuum-melted high-purity tellurium (Te, CAS 13494-80-9) planar magnetron sputtering targets in 4N (99.99%) / 4N5 / 5N (99.999%) grades for semiconductor, optical, and research PVD.

Purity / Grade4N (99.99%) / 4N5 / 5N (99.999%)
Typical SizeØ 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
Germanium (Ge) Sputtering Targets (Ge, CAS 7440-56-4) — Thin Film Materials studio photographTB-PVD-GE
Thin Film MaterialsGe · 7440-56-4

Germanium (Ge) Sputtering Targets

Vacuum-melted high-purity germanium (Ge, CAS 7440-56-4) planar magnetron sputtering targets in 5N (99.999%) / 6N (99.9999%) Intrinsic or Ga/Sb-Doped grades for semiconductor, optical, and research PVD.

Purity / Grade5N (99.999%) / 6N (99.9999%) Intrinsic or Ga/Sb-Doped
Typical SizeØ 1", 2", 3", 4", 6", 8" × Thickness 2–12.7 mm; Rectangular
Custom & catalog specifications

Need pricing, lead time, or custom dimensions?

Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.

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