High-density hot-pressed hafnium dioxide (hafnia) (HfO2, CAS 12055-23-1) ceramic sputtering targets in 4N (99.99% excl. Zr) / Low-Zr 4N purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99% excl. Zr) / Low-Zr 4N precursor powders, our hafnium dioxide (hafnia) (HfO2, CAS 12055-23-1) sputtering targets achieve high relative density (typically 96%–99.5% of 9.50 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.
Dense monoclinic/stabilized HfO2 targets combine wide bandgap (~5.7 eV, UV transparency to 220 nm) with high dielectric permittivity (εr ~ 20–25). Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering HfO2 targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.
| Property / Metric | Nominal Reference Value (Grade Dependent) |
|---|---|
| Formula & CAS # | HfO2 (CAS 12055-23-1) |
| Purity Grades | 4N (99.99% excl. Zr) / Low-Zr 4N |
| Bulk / Theoretical Density | 9.50 g/cm³ (≥96%–99.5% relative density) |
| Recommended Bonding | Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp) |
| Recommended Power Ramp | RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water |
Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.
Specify HfO2 purity (4N (99.99% excl. Zr) / Low-Zr 4N), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.
Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.
Prepare Hafnium Dioxide (Hafnia) (HfO2) Sputtering Targets RFQ ↗Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.
TB-PVD-OXHigh-density hot-pressed and HIP-consolidated oxide, nitride, carbide, and sulfide ceramic sputtering targets (ITO, AZO, ZnO, Al2O3, SiO2, TiO2, BaTiO3) indium-bonded for arc-free RF/pulsed-DC PVD.
TB-PVD-HFVacuum-melted high-purity hafnium (Hf, CAS 7440-58-6) planar magnetron sputtering targets in 3N5 (99.95% excl. Zr) / 4N Low-Zr grades for semiconductor, optical, and research PVD.
TB-EV-HFO2Vacuum-degassed 4N (99.99% excl. Zr) / 4N5 Low-Zr Laser Grade hafnium dioxide (HfO2, CAS 12055-23-1) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-PVD-ZRO2High-density hot-pressed zirconium dioxide & YSZ (ZrO2 / 8 mol% Y2O3-ZrO2, CAS 1314-23-4) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.