Vacuum-melted high-purity hafnium (Hf, CAS 7440-58-6) planar magnetron sputtering targets in 3N5 (99.95% excl. Zr) / 4N Low-Zr grades for semiconductor, optical, and research PVD.
High-purity hafnium (Hf, CAS 7440-58-6) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.
Refined crystal-bar hafnium targets enable contaminate-free reactive sputtering of high-k gate dielectrics and high-LIDT UV laser mirror layers. Each hafnium target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.
| Property / Metric | Nominal Reference Value (Grade Dependent) |
|---|---|
| Chemical Formula & CAS # | Hf (CAS 7440-58-6) |
| Available Purity Tiers | 3N5 (99.95% excl. Zr) / 4N Low-Zr |
| Theoretical / Bulk Density | 13.31 g/cm³ |
| Melting Point | 2,233 °C |
| Thermal / Magnetic Note | Paramagnetic; High-k HfO2 & refractory HfN/HfC precursor |
Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.
Specify hafnium purity grade (3N5 (99.95% excl. Zr) / 4N Low-Zr), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.
Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.
Prepare Hafnium (Hf) Sputtering Targets RFQ ↗Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.
TB-PVD-MTVacuum-melted and thermomechanically forged pure metal and custom alloy planar sputtering targets (3N5–5N) sized for research and production magnetron cathodes.
TB-PVD-HFO2High-density hot-pressed hafnium dioxide (hafnia) (HfO2, CAS 12055-23-1) ceramic sputtering targets in 4N (99.99% excl. Zr) / Low-Zr 4N purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-EV-HFO2Vacuum-degassed 4N (99.99% excl. Zr) / 4N5 Low-Zr Laser Grade hafnium dioxide (HfO2, CAS 12055-23-1) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-PVD-ZRVacuum-melted high-purity zirconium (Zr, CAS 7440-67-7) planar magnetron sputtering targets in 3N5 (99.95% Grade 702) / 4N Low-Hf (<100 ppm Hf) grades for semiconductor, optical, and research PVD.
Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.