High-density hot-pressed zirconium dioxide & YSZ (ZrO2 / 8 mol% Y2O3-ZrO2, CAS 1314-23-4) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99%) precursor powders, our zirconium dioxide & YSZ (ZrO2 / 8 mol% Y2O3-ZrO2, CAS 1314-23-4) sputtering targets achieve high relative density (typically 96%–99.5% of 5.90 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.
Supplied either as undoped ZrO2 or 3–8 mol% yttria-stabilized zirconia (YSZ) to prevent phase-change volume cracking and enable thin-film oxygen-ion conduction. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering ZrO2 / 8 mol% Y2O3-ZrO2 targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.
| Property / Metric | Nominal Reference Value (Grade Dependent) |
|---|---|
| Formula & CAS # | ZrO2 / 8 mol% Y2O3-ZrO2 (CAS 1314-23-4) |
| Purity Grades | 4N (99.99%) |
| Bulk / Theoretical Density | 5.90 g/cm³ (≥96%–99.5% relative density) |
| Recommended Bonding | Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp) |
| Recommended Power Ramp | RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water |
Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.
Specify ZrO2 / 8 mol% Y2O3-ZrO2 purity (4N (99.99%)), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.
Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.
Prepare Zirconium Dioxide & YSZ (ZrO2 / 8 mol% Y2O3-ZrO2) Sputtering Targets RFQ ↗Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.
TB-PVD-OXHigh-density hot-pressed and HIP-consolidated oxide, nitride, carbide, and sulfide ceramic sputtering targets (ITO, AZO, ZnO, Al2O3, SiO2, TiO2, BaTiO3) indium-bonded for arc-free RF/pulsed-DC PVD.
TB-PVD-ZRVacuum-melted high-purity zirconium (Zr, CAS 7440-67-7) planar magnetron sputtering targets in 3N5 (99.95% Grade 702) / 4N Low-Hf (<100 ppm Hf) grades for semiconductor, optical, and research PVD.
TB-SUB-YSZEpi-ready CMP-polished Yttria-Stabilized zirconia (YSZ) Single-Crystal substrates (ZrO2:Y2O3 (8–9.5 mol% Y2O3), CAS 1314-23-4) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
TB-ZRO2-CRTransformation-toughened 3Y-TZP structural zirconia parts and ultra-refractory YSZ/Mg-PSZ crucibles, setter plates, and tubes rated up to 2,100 °C.
Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.