High-density hot-pressed silicon dioxide (fused quartz) (SiO2, CAS 60676-86-0) ceramic sputtering targets in 4N5 (99.995%) / 5N (99.999%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N5 (99.995%) / 5N (99.999%) precursor powders, our silicon dioxide (fused quartz) (SiO2, CAS 60676-86-0) sputtering targets achieve high relative density (typically 96%–99.5% of 2.20 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.
Optically clear 4N5–5N fused quartz targets provide zero porosity, ultra-low trace alkali (<1 ppm Na), and exceptional thermal shock tolerance for RF low-index optical and dielectric PVD. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering SiO2 targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.
| Property / Metric | Nominal Reference Value (Grade Dependent) |
|---|---|
| Formula & CAS # | SiO2 (CAS 60676-86-0) |
| Purity Grades | 4N5 (99.995%) / 5N (99.999%) |
| Bulk / Theoretical Density | 2.20 g/cm³ (≥96%–99.5% relative density) |
| Recommended Bonding | Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp) |
| Recommended Power Ramp | RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water |
Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.
Specify SiO2 purity (4N5 (99.995%) / 5N (99.999%)), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.
Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.
Prepare Silicon Dioxide (Fused Quartz) (SiO2) Sputtering Targets RFQ ↗Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.
TB-PVD-OXHigh-density hot-pressed and HIP-consolidated oxide, nitride, carbide, and sulfide ceramic sputtering targets (ITO, AZO, ZnO, Al2O3, SiO2, TiO2, BaTiO3) indium-bonded for arc-free RF/pulsed-DC PVD.
TB-PVD-SIVacuum-melted high-purity silicon (Si, CAS 7440-21-3) planar magnetron sputtering targets in 5N (99.999%) / 6N Intrinsic, B-doped (p-type), or P-doped (n-type) grades for semiconductor, optical, and research PVD.
TB-EV-SIO2Vacuum-degassed 4N5 (99.995%) / 5N silicon dioxide (optical quartz) (SiO2, CAS 60676-86-0) evaporation pellets, granules, and slugs engineered for spit-free electron-beam and resistive thermal PVD.
TB-SIO2-WNPrecision double-side optically polished UV synthetic fused silica (JGS1), optical quartz (JGS2), and full-spectrum IR fused silica (JGS3) windows and wafer substrates.
Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.