CTE-matched purified isostatic graphite susceptors encapsulated in dense 6N CVD β-SiC or tantalum carbide (TaC) coatings for GaN MOCVD, SiC CVD epitaxy, and 2,200 °C PVT crystal growth.
Bare graphite outgasses carbon dust and reacts with hydrogen (H2), ammonia (NH3), silane (SiH4), and chlorosilanes inside epitaxial reactors. By machining CTE-matched ultra-pure (<5 ppm ash) isostatic graphite and encapsulating it in a dense, pinhole-free 80–150 µm layer of 6N CVD cubic β-SiC (or 2,200 °C-rated TaC), our susceptors combine graphite's RF induction coupling and thermal shock resistance with hermetic semiconductor cleanliness.
We fabricate single-wafer and multi-wafer pocket susceptors, showerheads, liner rings, and laser-cut serpentine heaters to customer drawings.
| Property / Metric | Nominal Reference Value (Grade Dependent) |
|---|---|
| Core Material | Purified Isostatic Graphite (< 5 ppm ash, CTE 4.5–4.8 × 10⁻⁶ /K) |
| Coating Options | CVD β-SiC (80–150 µm, 99.9999%) or Sintered/CVD TaC (30–80 µm) |
| Coating Density | 3.21 g/cm³ (β-SiC, zero open porosity) / 14.3 g/cm³ (TaC) |
| Max Operating Temp | 1,650 °C (CVD SiC in H2/NH3) / 2,200 °C (TaC in Ar/N2) |
| Pocket Flatness | ≤ 0.01 – 0.02 mm CNC-machined before coating |
Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.
Attach a 2D/3D engineering drawing or specify wafer pocket size (2", 4", 6", 8"), outer susceptor diameter, CVD SiC vs. TaC coating, and operating gas/temperature.
Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.
Prepare CVD SiC-Coated & TaC-Coated Graphite Susceptors, Wafer Carriers & Heaters RFQ ↗Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.
TB-GR-CNCPrecision CNC-machined isostatic graphite vacuum-furnace heaters, susceptors, brazing fixtures, wafer carriers, and graphite nuts/bolts made to customer CAD drawings.
TB-PG-GCUltra-pure 5N CVD pyrolytic graphite (anisotropic thermal/diamagnetic plates) and mirror-polished gas-impermeable glassy (vitreous) carbon electrodes, wafers, and crucibles.
TB-SUB-SICEpi-ready CMP-polished Single-Crystal 4H-SiC & 6H-SiC wafers & substrates (SiC (4H / 6H), CAS 409-21-2) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
TB-SUB-GANEpi-ready CMP-polished GaN-on-Sapphire & AlN-on-Sapphire epi templates (GaN / AlN on α-Al2O3, CAS 25617-97-4) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.