High-density hot-pressed silicon carbide (SiC, CAS 409-21-2) ceramic sputtering targets in 4N (99.99%) / 4N5 purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
Sintered by vacuum hot-pressing or Hot Isostatic Pressing (HIP) from sub-micron 4N (99.99%) / 4N5 precursor powders, our silicon carbide (SiC, CAS 409-21-2) sputtering targets achieve high relative density (typically 96%–99.5% of 3.14 g/cm³ theoretical density) and homogeneous phase stoichiometry. High density suppresses outgassing, surface nodule formation, and plasma arcing during RF magnetron or reactive pulsed-DC sputtering.
Available in direct-sintered RF grade and conductive nitrogen-doped / hot-pressed grades for pulsed-DC and RF deposition of ultra-hard wide-bandgap SiC films. Because ceramic targets have low thermal conductivity and limited thermal-shock resistance, we strongly recommend ordering SiC targets metallic-indium bonded to an OFHC copper backing plate. Each target ships vacuum-packed with its batch chemical assay and density COA.
| Property / Metric | Nominal Reference Value (Grade Dependent) |
|---|---|
| Formula & CAS # | SiC (CAS 409-21-2) |
| Purity Grades | 4N (99.99%) / 4N5 |
| Bulk / Theoretical Density | 3.14 g/cm³ (≥96%–99.5% relative density) |
| Recommended Bonding | Metallic Indium bond to OFHC Cu backing plate (<120 °C max run temp) |
| Recommended Power Ramp | RF / Pulsed-DC ramp at 5–10 W/min with ≥2–4 L/min cooling water |
Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.
Specify SiC purity (4N (99.99%) / 4N5), exact dopant weight/mole ratio if applicable, ceramic disc diameter × thickness (e.g., Ø 50.8 × 3.175 mm), backing-plate geometry, and sputtering chamber gun model.
Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.
Prepare Silicon Carbide (SiC) Sputtering Targets RFQ ↗Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.
TB-PVD-OXHigh-density hot-pressed and HIP-consolidated oxide, nitride, carbide, and sulfide ceramic sputtering targets (ITO, AZO, ZnO, Al2O3, SiO2, TiO2, BaTiO3) indium-bonded for arc-free RF/pulsed-DC PVD.
TB-SIC-CMPExtreme-hardness sintered silicon carbide (SSiC) and thermal-shock-proof silicon nitride (Si3N4) wear components, kiln furniture, seal rings, and molten-metal hardware.
TB-SUB-SICEpi-ready CMP-polished Single-Crystal 4H-SiC & 6H-SiC wafers & substrates (SiC (4H / 6H), CAS 409-21-2) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
TB-PVD-SIVacuum-melted high-purity silicon (Si, CAS 7440-21-3) planar magnetron sputtering targets in 5N (99.999%) / 6N Intrinsic, B-doped (p-type), or P-doped (n-type) grades for semiconductor, optical, and research PVD.
Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.