Vacuum-melted high-purity silicon (Si, CAS 7440-21-3) planar magnetron sputtering targets in 5N (99.999%) / 6N Intrinsic, B-doped (p-type), or P-doped (n-type) grades for semiconductor, optical, and research PVD.
High-purity silicon (Si, CAS 7440-21-3) planar sputtering targets are consolidated by vacuum melting or hot isostatic pressing and thermomechanically processed to achieve fine, equiaxed microstructure and ≥99.5%–100% relative density. Controlled grain uniformity and ultra-low dissolved gas content (O, N, H, C) ensure stable DC, pulsed-DC, RF, and HiPIMS plasma impedance with minimal droplet or particle generation across the target erosion track.
Specify boron-doped conductive p-type silicon for DC / pulsed-DC reactive sputtering of SiO2 and Si3N4, or undoped intrinsic 6N monocrystalline/polycrystalline Si for RF sputtering. Each silicon target is precision-machined to fit 1-inch (25.4 mm), 2-inch (50.8 mm), 3-inch (76.2 mm), 4-inch (100/101.6 mm), or custom rectangular magnetron cathodes, supplied monolithic or indium-bonded to an OFHC copper backing plate, and vacuum-sealed with a batch GDMS or ICP-OES Certificate of Analysis.
| Property / Metric | Nominal Reference Value (Grade Dependent) |
|---|---|
| Chemical Formula & CAS # | Si (CAS 7440-21-3) |
| Available Purity Tiers | 5N (99.999%) / 6N Intrinsic, B-doped (p-type), or P-doped (n-type) |
| Theoretical / Bulk Density | 2.33 g/cm³ |
| Melting Point | 1,414 °C |
| Thermal / Magnetic Note | Semiconducting; p-type B-doped (<0.02–1 Ω·cm) enables DC/pulsed-DC sputtering! |
Reference values reflect typical sintered, fused, or wrought grades. Exact batch test figures are confirmed on your written quotation and accompanying lot Certificate of Analysis.
Specify silicon purity grade (5N (99.999%) / 6N Intrinsic, B-doped (p-type), or P-doped (n-type)), target diameter and thickness (e.g., Ø 2.00" × 0.125" or 0.250"), flat edge vs. stepped clamp lip, magnetron gun model, and whether monolithic or indium-bonded to an OFHC copper backing plate is required.
Include target quantity, destination country/postal code for express air freight calculation, and any special cleanroom bagging or certification requests.
Prepare Silicon (Si) Sputtering Targets RFQ ↗Complementary furnaceware, substrates, PVD consumables, and refractory hardware frequently ordered together.
TB-PVD-MTVacuum-melted and thermomechanically forged pure metal and custom alloy planar sputtering targets (3N5–5N) sized for research and production magnetron cathodes.
TB-PVD-SIO2High-density hot-pressed silicon dioxide (fused quartz) (SiO2, CAS 60676-86-0) ceramic sputtering targets in 4N5 (99.995%) / 5N (99.999%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-PVD-SI3N4High-density hot-pressed silicon nitride (Si3N4, CAS 12033-89-5) ceramic sputtering targets in 4N (99.99%) purity, indium-bonded for arc-free RF and pulsed-DC thin-film deposition.
TB-SUB-SIEpi-ready CMP-polished silicon wafers & thermal oxide (SiO2/Si) substrates (Si / SiO2-on-Si, CAS 7440-21-3) wafers and diced research squares with sub-nanometer surface roughness for PVD, PLD, MBE, and ALD.
Submit your purity grade, geometry, quantity, and documentation requirements. Every order includes the producing mill's batch Certificate of Analysis (COA) and pre-shipment dimensional verification.